한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Characteristic of P doped ZnO-based thin film transistor by DC magnetron sputtering

  • Lee, Sih (Dept. of Materials Science and Engineering, Hanyang University) ;
  • Moon, Yeon-Keon (Dept. of Materials Science and Engineering, Hanyang University) ;
  • Moon, Dae-Yong (Dept. of Materials Science and Engineering, Hanyang University) ;
  • Kim, Woong-Sun (Dept. of Materials Science and Engineering, Hanyang University) ;
  • Kim, Kyung-Taek (Dept. of Materials Science and Engineering, Hanyang University) ;
  • Park, Jong-Wan (Dept. of Materials Science and Engineering, Hanyang University)
  • Published : 2009.10.12
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Abstract

Phosphorus doped ZnO (PZO) thin films were deposited on $SiO_2$/n-Si substrates using DC magnetron sputtering system varying oxygen partial pressures from 0 to 40 % under Ar atmosphere. The deposited films showed reduced n-type conductivity due to the compensating donor effects by phosphorus dopant. The bias-time stability shows relatively good stability over bias and time comparing to un-doped ZnO-based TFTs.

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