• 한국전기전자재료학회논문지
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• 제20권12호
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• pp.1056-1061
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• 2007

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. In this study, we aimed to systematically investigate surface morphologies and electrical properties of SiC epitaxial layers grown with varying a SiC/Al ratio in a SiC source powder during the sublimation growth using the CST method. The surface morphology was dramatically changed with varying the SiC/Al ratio. When the SiC/Al ratio of 90/1 was used, the step bunching was not observed in this magnification and the ratio of SiC/Al is an optimized range to grow of p-type SiC epitaxial layer. It was confirmed that the acceptor concentration of epitaxial layer was continuously decreased with increasing the SiC/Al ratio. 4H-SiC MESFETs haying a micron-gate length were fabricated using a lithography process and their current-voltage performances were characterized. It was confirmed that the increase of the negative voltage applied on the gate reduced the drain current, showing normal operation of FET device.

• 한국표면공학회지
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• 제50권3호
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• pp.219-224
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• 2017

The K gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films was investigated using SIMS(secondary ion mass spectrometry) and XPS(X-ray Photoelectron Spectroscopy) analysis. DC magnetron sputter techniques and APCVD(atmosphere pressure chemical vapor deposition) were utilized for the deposition of Al-1%Si thin films and $SiO_2/PSG/SiO_2$ passivations, respectively. Heat treatment was carried out at $400^{\circ}C$ for 5 h in air. SIMS depth profiling was used to determine the distribution of K, Al, Si, P and other elements throughout the $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films. XPS was used to analyze binding energies of Si and P elements in PSG passivation layers. K peaks were observed throughout the $PSG/SiO_2$ passivation layers on the Al-1%Si thin films and especially at the $PSG/SiO_2$ interfaces. K gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films is considered to be caused by a segregation type of gettering. The chemical state of Si and P elements in PSG passivation appears to be $SiO_2$ and $P_2O_5$, respectively

• Journal of Life Science
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• 제10권1호
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• pp.6-9
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• 2000

Salmonella typhimurium is a causative agent of the common worldwide disease, salmonellosis. To identify putative invasion genes involved in Samonella infections, a S. typhimurium cosmid library was constructed in noninvasive E. coli DJl. The invasion efficiencies of the cosmid library for cultured HEp-2 and HeLa cells were estimated by tissue-culture invasion assay. 2 out of 1,000 transductants, DHl(pSI623) and DHl(pSI511) were able to invade the cells. Compared to E. coli by DHl(pSI511) increased 25- and 33 fold, respectively. The invasion efficiencies of HeLa cells by DHl(pSI623) increased 31- and 35 fold, respectively. This illustrates that the cosmid clones, DHl(pSI623) and DHl(pSI511) could harbor the invasion determinants derived from genomic DNA of S. typhimurium 82/6915, conferring the invasive characters for the cells.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.153-154
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• 2000

Large size poly-Si TFT-LCDs have been fabricated using p-channel thin film transistors for notebook PC application. We have designed and implemented the data sampling circuit and gate drivers that operate with low power consumption and high reliability. The gate driver has a redundant structure. We have realized the uniform and excellent display quality comparable to that of CMOS module. The reliability of panel is investigated and discussed by measuring the bias stability of transistors.

• 자원환경지질
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• 제5권2호
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• pp.77-86
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• 1972

Bowen의 "Petrogeny's Residua System"으로 알려져 있는 NaAlSiO_4-KAlSiO_4-SiO_2-H_2O계(系)는 대륙지각(大陸地殼)에 있어 화성암(火成岩)과 변성암(變成岩) 간(間)의 상(相)의 관계(關係)를 이해(理解)하는데 대단히 중요(重要)한 것이다. 그럼에도 불구하고 이 계내(系內)의 상(相)의 관계(關係)는 아직 Mohorovicic 불연속면(不連續面) 이상(以上)의 위치(位置)의 P-T 범위(範圍)의 것 조차 완전(完全)히 알려져 있지 않다. 그러므로 이 상(相)들 간(間)의 관계(關係)를 알 필요(必要)가 있다. 본(本) 연구(硏究)는 Schreinemaker 법칙(法則)을 적용한 계내(系內)에 있는 불변점(不變點)(~5kb/${\sim}635^{\circ}C$) 부근(附近)에 있는 순서를 추이(推理)하였는데 이는 주(主)로 Morse (1969a&6) 실험자료에 근거하였다. 결론(結論)으로 불변점(不變點)(~5kb/${\sim}635^{\circ}C$) 부근(附近)에서의 P-T 곡선(曲線)의 순서(順序)는 각각(各各) P-T 투영(投影)에서는 (L), (Anl), (Or), (V), (Ne), 및 (Ab)의 순(順)이고 P-T 곡선(曲線) (L)은 P-T 구역(區域) 하부(下部)로 연장되며 (Anl) 곡선(曲線)은 불변점(不變點)보다 높은 온도(溫度)와 낮은 압력(壓力)의 구역(區域)으로 연장(延長)된다는 것을 알았다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.403-403
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• 2011

TCO/p/i/n 구조의 비정질 실리콘 박막 태양전지의 제작에 있어서 a-Si 혹은 넓은 밴드갭 물질인 SiOx, SiC 등은 window layer로 주로 사용 되어왔다. 그러나 ${\mu}c$-Si는 우수한 광학적, 전기적 특성에 불구하고 낮은 activation energy에 의한 p/i interface 에서의 band-off set에 의한 정공재결합에 의해 사용되어 지지 못했다. 이러한 재결합은 p/i interface상에 buffer layer를 삽입함으로써 개선되어 질 수 있다. 본 논문에서는 비정질 실리콘 보다 넓은 광학적 밴드갭을 가지는 a-SiOx 박막을 완충층으로 사용하여 p/i 계면에서의 재결합 감소에 대한 시뮬레이션을 수행하였다. a-SiOX 박막 내에 포함 된 산소의 양에 따라 밴드갭을 조절하여 1.8eV~2.0eV 사이의 완충층을 삽입하여 박막태양전지의 개방전압, 단락전류, 효율 등에 끼치는 영향을 ASA 시뮬레이션을 통하여 알아보았다.

• Journal of the Korean Physical Society
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• 제73권12호
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• pp.1895-1898
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• 2018

The mechanical properties of Al, Ti, Fe, and Cu metals p-type Si, and n-type Si were investigated by using coincidence Doppler broadening (CDB) positron annihilation spectroscopy. The samples in this experiment were irradiated by using X-rays at generating powers for up to 9 kW. The data taken after the irradiation showed all the characteristic features predicted from defects with vacancies. The S parameter values of the metals were generally less than those of semiconductors such as p-type Si and n-type Si. The relationship between n-type Si and p-type Si were more affected when n-type Si rather than p-type Si was irradiated with X-rays.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.94-94
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• 2008

We have performed simulation for Junction Field Effect Transistor(JFET) using Silvco to improve its electrical properties. The device structure and process conditions of Si-control JFET(Si-JFET) were determined to set its cut off voltage and drain current(at Vg=0V) to -0.5V and $300{\mu}A$, respectively. From electrical property obtained at various implantation energy, dose, and drive-in conditions of p-gate doping, we found that the drive in time of p-type gate was the most determinant factor due to severe diffusion. Therefore we newly designed SiGe-JFET, in which SiGe layer is to epitaxial layers placed above and underneath of the Si-channel. The presence of SiGe layer lessen the p-type dopants (Boron) into the n-type Si channel the phenomenon would be able to enhance the structural consistency of p-n-p junction. The influence of SiGe layer will be discussed in conjunction with boron diffusion and corresponding I-V characteristics in comparison with Si-control JFET.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2006년도 ISMP 2006
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• pp.283-291
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• 2006

[ $\blacksquare$ ] Mega Trends $\blacksquare$ Ceramic Based Module -> PCB Based SiP $\blacksquare$ Mobile SiP decreases footprint more than 40% than discrete

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권10호
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• pp.495-499
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• 2004

Characteristics of ohmic Ni/Si/Ni contacts to n-type 4H-SiC are investigated systematically. The ohmic contacts were formed by annealing Ni/Si/Ni sputtered sequentially The annealings were performed at 950℃ using RTP in vacuum ambient and N₂ ambient, respectively. The specific contact resistivity(p/sub c/), sheet resistance(R/sub s/), contact resistance (R/sub c/) transfer length(L/sub T/) were calculated from resistance(R/sub T/) versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. While the resulting measurement values of sample annealed at vacuum ambient were p/sub c/ = 3.8×10/sup -5/Ω㎠, R/sub c/ = 4.9 Ω and R/sub T/ = 9.8 Ω, those of sample annealed at N₂ ambient were p/sub c/ = 2.29×10/sup -4/Ω㎠, R/sub c/ = 12.9 Ω and R/sub T/ = 25.8 Ω. The physical properties of contacts were examined using XRD 3nd AES. The results showed that nickel silicide was formed on SiC and Ni was migrated into SiC. This result indicates that Ni/Si/Ni ohmic contact would be useful in high performance electronic devices.