• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.4
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• pp.738-742
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• 2007

The variations in the device characteristics of hydrogenated amorphous thin-film transistors (a-Si:H TFTs) were studied according to the processes of pixel electrode fabrication to make active-matrix flat-panel displays. The off-state current was about 1 pA and the switching ratio was over $10^6$ before fabrication of pixel electrodes; however, the off-state current increased over 10 pA after fabrication of pixel electrodes. Surface treatment on SiNx passivation layers using plasma could improve the off-state characteristics after pixel electrode process. $N_2$ plasma treatment gave the best result. Charge accumulation on the SiNx passivation layer during the deposition of transparent conducting layer might cause the increase of off-state current after the fabrication of pixel electrodes.

• Journal of Korea Foundry Society
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• v.18 no.5
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• pp.474-480
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• 1998

Microstructural characteristics of semi-solid state processed hypereutectic Al-Si alloys have been investigated. Main concern of the present study is to investigate the effects of P and Sr addition on the size and morphology change of the primary Si particles. Refinement of the primary Si particles was observed with the addition of P and Sr at the early stage of semi-solid state processing, but such a refining effects became negligible resulting in Si particles with a near-spherical morphology with continuous stirring. This implies that the microstructural transformation mechanism became more dependent to stirring effects than to the alloying effects during semi-solid state processing. Brittle fracture and agglomeration were proposed as the mechanisms for microstructural alterations during semi-solid state processing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.41-42
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• 2008

p-type(100) Si 위에 BTMSM과 산소를 혼합한 전구체를 가지고 PECVD 방법을 사용 하여 저유전상수를 갖는 SiOCH막을 형성하였다. 알루미늄 전극을 구현한 MIS (Al/SiOCH/p-si(100)) 구조의 커패시터를 가지고 C-V 특성을 측정하여 유전상수를 계산하였다. 상온에서 증착된 SiOCH 박막의 유전상수는 $450^{\circ}C$에서 30분 동안 열처리 후 뚜렷하게 감소하는 경향을 나타냈으며, 상온 및 대기압에서 공기 중에 노출시켜 자연 산화과정을 겪은 후에 각각의 유전상수는 전체적으로 증가하였지만, 열처리한 박막이 상대적으로 경시효과(aging effects)에 대하여 안정화된 것을 확인하였다.

• Food Science of Animal Resources
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• v.28 no.2
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• pp.138-145
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• 2008

This study was carried out to compare the meat quality of beef from Hanwoo supplemented with dietary Rhus verniciflua Stokes (RVS) meal, silicate (Si), and chromium-methionine (Cr-Met) during refrigerated storage. The 26 mon-aged Hanwoo steers were fed basal diets containing 4% RVS, 4% RVS+400 ppm Cr-Met, 1.4% $SiO_2$, or 0.14% $SiO_2+400 ppm$ Cr-Met for 4 mon prior to slaughter. The M. longissimus from carcasses were then stored at $4{\pm}0.2^{\circ}C$ for 7 d. The crude fat content was higher in the Si and Si+Cr-Met groups (p<0.05). The water-holding capacity (WHC) and tenderness were highest in the Si+Cr-Met group (p<0.05). With regard to fatty acids, the polyunsaturated fatty acid (PUFA) content was lower in the Si and Si+Cr-Met groups (p<0.05), and the monounsaturated fatty acid (MUFA) content was lowest in the Si+Cr-Met group (p<0.05). The TBARS and MetMb contents were decreased in the Si, Si+Cr-Met, and RVS+Cr-Met groups. Regarding meat color during storage, the Si+Cr-Met group showed the highest L, a, b, C values and total color, and those of the Si and RVS+Cr-Met groups were higher than the RVS group (p<0.05). Consequently, beef from Si-fed Hanwoo had higher fat content, color and oxidation stability, and lower PUFA content than RVS-fed beef. And beef from Si+Cr-Met-fed Hanwoo had higher WHC, tenderness and color stability, and lower MUFA content than Si-fed beef.

• Asian-Australasian Journal of Animal Sciences
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• v.29 no.5
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• pp.659-665
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• 2016

The effects of three different feeding systems on beef cattle production performance, rumen fermentation, and rumen digesta particle structure were investigated by using 18 Limousin (steers) with a similar body weight ($575{\pm}10kg$) in a 80-d experiment. The animals were equally and randomly divided into three treatment groups, namely, total mixed ration group (cattle fed TMR), SI1 group (cattle fed concentrate firstly then roughage), and SI2 group (cattle fed roughage firstly then concentrate). The results showed that the average daily gain was significantly higher in cattle receiving TMR than in those receiving SI1 and SI2 (p<0.05). Consumption per kg weight gain of concentrate, silage, and combined net energy (NEmf) were significantly decreased when cattle received TMR, unlike when they received SI1 and SI2 (p<0.05), indicating that the feed efficiency of TMR was the highest. Blood urea nitrogen (BUN) was significantly decreased when cattle received TMR compared with that in cattle receiving SI1 (p<0.05), whereas there was no difference compared with that in cattle receiving SI2. Ammonia nitrogen concentration was significantly lower in cattle receiving TMR than in those receiving SI1 and SI2 (p<0.05). The rumen area of cattle that received TMR was significantly larger than that of cattle receiving SI1 (p<0.05), but there was no difference compared with that of cattle receiving SI2. Although there was no significant difference among the three feeding systems in rumen digesta particle distribution, the TMR group trended to have fewer large- and medium-sized particles and more small-sized particles than those in the SI1 and SI2 groups. In conclusion, cattle with dietary TMR showed increased weight gain and ruminal development and decreased BUN. This indicated that TMR feeding was more conducive toward improving the production performance and rumen fermentation of beef cattle.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.118-119
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• 2013

High power, short wavelength red laser diodes (LDs) have attracted significant interests in a variety of fields due to their advantages in terms of reliability, compactness and cost. The higher brightness for human eyes is required, the shorter wavelength like 630 nm is necessary with higher output power. In this respect, LDs are promising as alternative candidates of gas or dye lasers for such applications due to their small size, high optical/electrical power conversion efficiency, robustness and so on. The crystalline quality of GaInP-AlGaInP multiple quantum wells (MQWs) and AlInP cladding layers is a crucial part in the device performance of GaInP red LDs. Here, we first investigated the effect of Si diffusion on the optical properties of GaInP-AlGaInP MQWs grown with different growth temperatures. Secondary ion mass spectroscopy (SIMS) measurements revealed that both the Mg and Si diffusion into MQW active region was significant. To reduce such diffusion, we employed undoped Mg and Si diffusion barrier and could improve the properties.Without both Mg and Si diffusion barriers, no lasing emission was observed. However, lasing emission was observed clearly for the red LDs with both Mg and Si diffusion barriers. We then investigated the temperature dependent optical properties of MQW layers grown with different well thicknesses (6, 8 and 10 nm). When the well thickness was 10 nm, the better crystalline quality was obtained. However, the observed LD performances were similar, probably due to the defects and impurities in the AlGaInP layer. Further investigation with the detailed analyses will be presented later.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.41-46
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• 2009

The low dielectric SiOCH films were deposited on p-type Si(100) substrates through the dissociation of BTMSM $(((CH_3)_3Si)_2CH_2)$ precursors with oxygen gas by using PECVD method. BTMSM precursor was introduced with the flow rates from 42 to 60 sccm by 2 sccm step into reaction chamber but with the constant flow rate of 60 sccm $O_2$. SiOCH thin films were annealed at $450^{\circ}C$ for 30 minutes. The electrical property of SiOCH thin films was studied by MIS, Al/SiOCH/p-Si(100), structure. Annealed samples showed large reduction of the maximum capacitance yielding low dielectric constant owing to reductions of surface charge density. After exposure at room temperature and atmospheric pressure, dielectric constant of SiOCH films was totally increased. However, annealed SiOCH thin films were more stable than as-deposited SiOCH thin films for natural oxidation.

• Journal of the Korean institute of surface engineering
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• v.37 no.6
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• pp.319-325
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• 2004

Fe thin films containing Si particles were prepared on metallic substrates by electrodeposition method in sulfate solutions and the content of codeposited Si particles in the films was investigated as a function of applied current density, the content of Si particels in the solution, solution pH, solution temperature and concentration of $FeSO_4$$7H_2$O in the solution. The amount of Si codeposited in the film was not dependent on the applied current density, solution pH and solution temperature, while it was dependent on the content of Si particles in the solution and the concentration of $FeSO_4$$7H_2$O in the solution. The amount of Si codeposited in the film increased with increasing content of Si particles in the solution but reached a maximum value of about 6 wt% when the content of Si particles in the solution exceeds 100 g/l. On the other hand, the content of Si codeposited in the film increased up to about 17 wt% with decreasing concentration of $FeSO_4$$7H_2$O in the solution. These results would be applied to the fabrication of very thin Fe-6.5 wt% Si sheets for electrical applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.10
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• pp.907-911
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• 2006

In this paper, we propose a new structure that improves the on-state voltage drop and switching speed in Insulated Gate Bipolar Transistors(IGBTs), which can be widely used in high voltage semiconductors. The proposed structure is unique in that the collector area is divided by $SiO_2$, whereas the conventional IGBT has a planar P+ collector structure. The process and device simulation results show remarkably improved on-state and switching characteristics. Also, the current and electric field distribution indicate that the segmented collector structure has increased electric field near the $SiO_2$ corner, which leads to an increase of electron current. This results in a decrease of on-state resistance and voltage drop to $30%{\sim}40%$. Also, since the area of the P+ region is decreased compared to existing structures, the hole injection decreases and leads to an increase of switching speed to 30 %. In spite of some complexity in process procedures, this structure can be manufactured with remarkably improved characteristics.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1226-1227
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• 2008

In this study, a single p-type Si nanowire - Au nanoparticles nano floating gate memory (NFGM) device is successfully fabricated and characterized their memory effects by comparison of electrical characteristics of p-type Si nanowire-based field effect transistor (FET) devices with Au nanoparticles embedded in the $Al_2O_3$ gate materials and without the Au nanoparticles. Drain current versus gate voltage ($I_{DS}-V_{GS}$) characteristics of a single p-type Si nanowire - Au nanoparticle NFGM device show counterclockwise hysteresis loops with the threshold voltage shift of ${\Delta}V_{th}$= 3.0 V. However, p-type Si nanowire based top-gate device without Au nanoparticles does not exhibit a threshold voltage shift. This behavior is ascribed to the presence of the Au nanoparticles, and is indicative of the trapping and emission of electrons in the Au nanoparticles.