• Journal of the Korean Ceramic Society
• /
• v.29 no.10
• /
• pp.791-796
• /
• 1992

SiC(p)-TiC(p) composites were prepared by gas pressure sintering technique. B4C powder and phenolic resin were added as sintering aids by 0.3 wt%-B and 3 wt%-C, TiC powder were dispersed in SiC by 0, 10, 20, 30 and 50 vol%. Flextural strength, fracture toughness and theoretical density of 70 vol% SiC-30 vol% TiC composite sintered at 220$0^{\circ}C$ by gas pressing were 540 MPa, 5.5 MPa.m1/2 and 98.8% respectively.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.40 no.7
• /
• pp.684-689
• /
• 1991

Magnetic properties of sintered Fe-Si-P alloys have been investigated as a function of sintering condition and composition. Sintering was carried in the temperature range from 1100ø C to 1400ø C in vacuum. As the sintering temperature increases, the magnetic properties of specimens were improved mainly due to the easy movement of domain wall because large pores and large grains were formed during the sintering process at high temperature. When sintered at 1400ø C, Fe-2w/o Si-0.5w/o P compact had the best mgnetic properties, but more phosphorus addition degraded magnetic properties. It appears that the degradation was caused by the formation of non-magnetic compounds such as Si P, Fe3P in the compacts with high phosphorus contents.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.4 no.1
• /
• pp.63-70
• /
• 1994

Single crystals of the superionic conductor ${\beta}-Ag_3SI$ were prepared by thermal treatmentr from the reactant mixture of AgI and $Ag_2S$. The growing single crystals were made to spherical shape of $200{mu}m$ in diameter. The detailed structures analyses revealed that $Ag^+$ in ${\beta}-Ag_3SI$ distribute on 12h site of 4-coordination inpreference to 3c site of 6-coordination. The effective one-particle potential (o.p.p.). of $Ag^+$ along [110] direction was evaluated from the probability density function(p.d.f.) Activation energy calculated from the o.p.p. curve has been found to be 0.012 eV for the diffusion of $Ag^+$ on (001) plane in the ${\beta}-Ag_3SI$ structure.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.36D no.4
• /
• pp.86-92
• /
• 1999

A SiGe p-channel MESFET using $\delta$-doped layers is designed and the considerabel enhancement of the current driving capability of the device is observed from the result of simulation. The channel consists of double $\delta$-doped layers separated by a low-doped spacer which consists of Si and SiGe. A quantum well is formed in the valence band of the Si/SiGe heterojunction and much more holes are accumulated in the SiGe spacer than those in the Si spacer. The saturation current is enhanced by the contribution of the holes in the spacer. Among the design parameters that affect the performance of the device, the thickness of the SiGe layer and the Ge composition are studied. The thickness of 0~300$\AA$ and the Ge composition of 0~30% are investigated, and saturation current is observed to be increased by 45% compared with a double $\delta$-doped Si p-channel MESFET.

• ETRI Journal
• /
• v.27 no.4
• /
• pp.439-445
• /
• 2005

We introduce a strained-SiGe technology adopting different thicknesses of Si cap layers towards low power and high performance CMOS applications. By simply adopting 3 and 7 nm thick Si-cap layers in n-channel and p-channel MOSFETs, respectively, the transconductances and driving currents of both devices were enhanced by 7 to 37% and 6 to 72%. These improvements seemed responsible for the formation of a lightly doped retrograde high-electron-mobility Si surface channel in nMOSFETs and a compressively strained high-hole-mobility $Si_{0.8}Ge_{0.2}$ buried channel in pMOSFETs. In addition, the nMOSFET exhibited greatly reduced subthreshold swing values (that is, reduced standby power consumption), and the pMOSFET revealed greatly suppressed 1/f noise and gate-leakage levels. Unlike the conventional strained-Si CMOS employing a relatively thick (typically > 2 ${\mu}m$) $Si_xGe_{1-x}$ relaxed buffer layer, the strained-SiGe CMOS with a very thin (20 nm) $Si_{0.8}Ge_{0.2}$ layer in this study showed a negligible self-heating problem. Consequently, the proposed strained-SiGe CMOS design structure should be a good candidate for low power and high performance digital/analog applications.

• Journal of the Mineralogical Society of Korea
• /
• v.17 no.2
• /
• pp.157-168
• /
• 2004

The surface chemical properties of aqueous kaolinite and halloysite were studied using a potentiometric titration experiment and a computer program FITEQL3.2. Among the surface complexation models a constant capacitance model was selected for this study. The 2 sites - 3 p $K_{a}$ s model, in which the surfaces were assumed to have tetrahedral and octahedral sites, was reasonable for the description of the experimental data. The surface charges of both minerals were negative above pH of 4. The higher the pH, the lower the proton surface charge densities of both minerals. The ≡ $SiO^{[-10]}$ site played an important role in cation adsorption in acid and neutral pH range; whereas the ≡ Al $O^{[-10]}$ site was in an alkaline pH range. The optimized intrinsic constants of kaolinite, p $K_{a2(Si)}$$^{int}$, p $K_{al(Al)}$$^{int}$ and p $K_{a2(Al)}$$^{int}$ were 4.436, 4.564, and 8.461 respectively, and those of halloysite were 7.852, 3.885, and 7.084, respectively. The total Si and Al surface sites concentrations of kaolinite were 0.215 and 0.148 mM, and those of halloysite were 0.357 and 0.246 mM. The ratio of Si and Al surface site densities ([≡SiOH]:[≡AlOH]) of both minerals was 1 : 0.69. The total surface site density of kaolinite, 3.774 sites/n $m^2$, was 1.6 times larger than that of halloysite, 2.292 sites/n $m^2$./TEX>.

• New & Renewable Energy
• /
• v.3 no.4
• /
• pp.63-68
• /
• 2007

유리를 기판으로 하는 superstrate pin 비정질 실리콘 태양전진에서 전면 투명전도막(TCO)과 p-층의 계면은 태양전지 변환효율에 큰 영향을 미친다. 면투명전도막(TCO)으로 현재 일반적으로 사용되는 ZnO:Al는 $SnO_2:F$보다 전기, 광학적으로 우수하고, 안개율 (Haze)높으며, 수소 플라즈마에서 안정성이 높은 특징을 갖고 있다. 그래서 박막 태양전지의 특성향상에 매우 유리하나, 태양전지로 제조했을 때, $SnO_2$보다 충진율(Fill Factor:F.F)과 $V_{oc}$가 감소한다는 단점을 가지고 있다. 본 실험실에서는 $SnO_2:F$dml F.F.가 72%이 나온 반면 ZnO:Al의 F.F은 68%에 그쳤다. 이들 원인을 분석하기 위해 TCO/p-layer의 전기적 특성을 알아 본 결과, $SnO_2:F$보다 ZnO:Al의 직렬저항이 높게 측정되었다. 이러한 결과를 바탕으로 p-layer에 $R=(H_2/SiH_4)=25$로 변화, p ${\mu}c$-Si:H/p a-SiC:H로 p-layer 이중 증착, p-layer의 boron doping 농도를 증가시키는 실험을 하였다. 직렬저항이 가장 낮았던 p ${\mu}c$-Si:H/p a-SiC:H 인 p-layer 이중 증착에서 $V_{oc}$는 0.95V F.F는 70%이상이 나왔다. 이들 각 p층의 $E_a$(Activiation Energy)를 구해본 결과, ${\mu}c$-Si:H의 Ea 가 가장 낮은 것을 관찰 할 수 있었다.

• Advanced Composite Materials
• /
• v.18 no.4
• /
• pp.339-350
• /
• 2009

Al-Fe-V-Si alloys reinforced with SiC particles were prepared by multi-layer spray deposition technique. Both microstructures and mechanical properties including hardness and tensile properties development during hot exposure process of Al-8.5Fe-1.3V-1.7Si, Al-8.5Fe-1.3V-1.7Si/15 vol% $SiC_P$ and Al-10.0Fe-1.3V-2Si/15 vol% $SiC_P$ were investigated. The experimental results showed that an amorphous interface of about 3 nm in thickness formed between SiC particles and the matrix. SiC particles injected silicon into the matrix; thus an elevated silicon concentration was found around $\alpha-Al_{12}(Fe,\;V)_3Si$ dispersoids, which subsequently inhibited the coarsening and decomposition of $\alpha-Al_{12}(Fe,\;V)_3Si$ dispersoids and enhanced the thermostability of the alloy matrix. Moreover, the thermostability of microstructure and mechanical properties of Al-10.0Fe-1.3V-2Si/15 vol% $SiC_P$ are of higher quality than those of Al-8.5Fe-1.3V-1.7Si/15 vol% $SiC_P$.

• Journal of the Korean Magnetics Society
• /
• v.8 no.6
• /
• pp.346-349
• /
• 1998

In order to reduce to the defect density in poly-Si/SiO$_2$ thin films, where poly-Si is either undoped or doped by BF$_2$ implantation, the poly-Si/SiO$_2$ samples have been hydrogenated by rf plasmas of low temperature. Before hydrogenation, both $P_b$ centers and E centers were observed in the poly-Si(undoped)/SiO$_2$ and in the poly-Si(doped)/SiO$_2$. After 30 min hydrogenation, the $P_b$ center was reduced by 80 % doped sample and by 76 % in the undoped sample and the E center was not observed. After 90min hydrogenation, however, increases of the $P_b$ centers and regenerations of the E center were observed in the undoped sample as well as in the doped one. Compared with the undoped sample, the increase of $P_b$ center in the doped one was more dominant.

• Journal of Electrical Engineering and information Science
• /
• v.2 no.5
• /
• pp.65-71
• /
• 1997

We present heterojunction solar cells with a structure of metal/a-Si:H(n-i-p)/poly-Si(n-p)/metal for the terrestrial applications. This cell consists fo two component cells: a top n-i-p junction a-Si:Hi cell with wide-bandgap 1.8eV and a bottom n-p junction poly-Si cell with narrow-bandgap 1.1eV. The efficiency influencing factors of the solar cell were investigated in terms of simulation an experiment. Three main topics of the investigated study were the bottom cell with n-p junction poly-Si, the top a-Si:H cell with n-i-p junction, and the interface layer effects of heterojunction cell. The efficiency of bottom cell was improved with a pretreatment temperature of 900$^{\circ}C$, surface polishing, emitter thickness of 0.43$\mu\textrm{m}$, top Yb metal, and grid finger shading of 7% coverage. The process optimized cell showed a conversion efficiency about 16%. Top cell was grown by suing a photo-CVD system which gave an ion damage free and good p/i-a-Si:H layer interface. The heterojunction interface effect was examined with three different surface states; a chemical passivation, thermal oxide passivation, and Yb metal. the oxide passivated cell exhibited the higher photocurrent generation and better spectral response.