• Proceedings of the KIEE Conference
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• 1996.07a
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• pp.537-539
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• 1996

In this paper, a design method of the phase shift ZVS-PWM converter is proposed to minimize the volume and increase the efficiency. The trade-offs of switching frequency, efficiency vs volume and ZVS range vs efficiency is also presented. The simulation of the designed converter is performed using the P-SPICE in which a phase-shift controller is proposed. For minimization of the converter volume, switching frequency is selected 100kHz, a simple drive circuit and single auxiliary supply are applied. In consideration of efficiency and load condition, ZVS range is decided from 50% to full load. A 28V, 1Kwatt prototype converter, of which the switch is MOSFET is made, verified the performance.

• Proceedings of the KIPE Conference
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• 2004.07a
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• pp.330-334
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• 2004

A new SEPIC-Flyback converter is proposed. The proposed converter is the integration of SEPIC and Flyback converter. Not only SEPIC output but also Flyback output could be fully regulated by constant frequency PWM control. Merged SEPIC and Flyback topology can share the transformer and power MOSFET. When the switch turns on, one topology operates via capacitive energy transfer. The other topology acts as inductive energy transfer while the switch is off. So, it can increase power density per one cycle. The experimental result is presented and verified.

• Proceedings of the KIPE Conference
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• 2003.07b
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• pp.781-784
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• 2003

In this paper, high density on-board dc/dc converter using multi-layer PCB is proposed. Recently, the communication system wants power supply of open-frame, high density and low profile. So experimental converter was consisted of 3.3V/30A Quarter Brick size DC/DC Converter. To power height limit, coil of transformer, choke and circuits were consisted of multi layer PCB. Besides to improve of efficiency, made secondary synchronous rectifier Mosfet driving circuit. So total efficiency could be improved.

• Journal of the Korean Ceramic Society
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• v.38 no.9
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• pp.782-786
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• 2001

Cobalt silicide has been employed to Embedded DRAM (Dynamic Random Access Memory) and Logic (EDL) as contact material to improve its speed. We have investigated the influences of Ti and TiN capping layers on cobalt-silicided Complementary Metal-Oxide-Semiconductor (CMOS) device characteristics. TiN capping layer is shown to be superior to Ti capping layer with respect to high thermal stability and the current driving capability of pMOSFETs. Secondary Ion Mass Spectrometry (SIMS) showed that the Ti capping layer could not prevent the out-diffusion of boron dopants. The resulting operating current of MOS devices with Ti capping layer was degraded by more than 10%, compared with those with TiN.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.3
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• pp.221-226
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• 2008

A new two dimensional (2-D) analytical model for the Threshold Voltage on dual material surrounding gate (DMSG) MOSFETs is presented in this paper. The parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions. The simple and accurate analytical expression for the threshold voltage and sub-threshold swing is derived. It is seen that short channel effects (SCEs) in this structure is suppressed because of the perceivable step in the surface potential which screens the drain potential. We demonstrate that the proposed model exhibits significantly reduced SCEs, thus make it a more reliable device configuration for high speed wireless communication than the conventional single material surrounding gate (SMSG) MOSFETs.

• Proceedings of the Korea Information Processing Society Conference
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• 2002.04a
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• pp.631-634
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• 2002

In this paper we improved that hump occurrence by increased oxidation thickness, and control field oxide recess$(\leq20nm)$, wet oxidation etch time(19HF, 30sec), STI nitride wet cleaning time(99 HF, 60sec + P 90min) and gate pre-oxidation cleaning time(U10min+19HF, 60sec) to prevent hump occurring at STI channel edge.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.3
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• pp.390-396
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• 2015

This paper proposes a method to reduce flicker when running an AC-power direct-drive type multiple string LED driver IC. The proposed method greatly decreases flicker using one capacitor and P-type MOSFET transistor (PMOS). The flicker index (FI) was reduced by over 40% through experiments, and less than half of the conventional external components are used in the passive valley fill circuit, which gives an advantage in the cost and utilization in the design of LED lighting modules. The 0.35 um 700 V BCD process was used to manufacture this LED driver.

• Journal of Electrical Engineering and Technology
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• v.2 no.1
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• pp.68-80
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• 2007

This paper covers switched reluctance generator (SRG) and its comparison with induction and synchronous machines for distributed generation. The SRG is simple in design, robust in construction, and fault tolerant in operation; it can also withstand very high temperatures. However, the performance and cost of the SRG power electronics driver are highly affected by the topology and design of the converter. IGBT and MOSFET based converters are not suitable for very high power applications. This paper presents thyristor-based resonant converters which are superior candidates for very high power applications. Operations of the converters are analyzed and their characteristics and dynamics are determined in terms of the system parameters. The resonant converters are capable of handling high currents and voltages; these converters are highly efficient and reliable as well. Therefore, they are suitable for high power applications in the range of 1MW or larger for distributed generation.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2005.11a
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• pp.383-386
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• 2005

In this paper, proposed new partial resonance ZCS PWM controlled High frequency insulated Full-bridge DC-DC converter not using exciting current of high frequency transformer. It is compared with the existing principles in characteristics. It also realizes a widely stabilized ZVS operating using new ON-OFF control method at synchronized power rectification MOSFET of high frequency insulated transformer secondary. Besides, it is brought over 97[%] measurement efficiency by proposed DC-DC converter.

• Proceedings of the KIEE Conference
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• 2005.07b
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• pp.1413-1415
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• 2005

In paper, propose new partial resonance ZCS PWM controlled High frequency insulating Full-bridge DC/DC converter not using exciting current of high frequency transformer. It is compared with the existing principles in characteristics. It also realizes a widely stabilized ZVS operating using new On-Off control method at synchronized power rectification MOSFET of high frequency insulating transformer secondary. Finally, it is brought over 97[%] measurement -efficiency by proposed DC-DC converter. It is proved effectiveness of new methods using DC UPS PWM rectifier as switching power.