• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.387.1-387.1
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• 2014

A new class of temperature-sensing materials is demonstrated along with their integration into transparent and flexible field-effect transistor (FET) temperature sensors with high thermal responsivity, stability, and reproducibility. The novelty of this particular type of temperature sensor is the incorporation of an R-GO/P(VDF-TrFE) nanocomposite channel as a sensing layer that is highly responsive to temperature, and is optically transparent and mechanically flexible. Furthermore, the nanocomposite sensing layer is easily coated onto flexible substrates for the fabrication of transparent and flexible FETs using a simple spin-coating method. The transparent and flexible nanocomposite FETs are capable of detecting an extremely small temperature change as small as $0.1^{\circ}C$ and are highly responsive to human body temperature. Temperature responsivity and optical transmittance of transparent nanocomposite FETs were adjustable and tuneable by changing the thickness and R-GO concentration of the nanocomposite.

• Journal of Sensor Science and Technology
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• v.24 no.3
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• pp.165-168
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• 2015

We demonstrated low-voltage organic thin-film transistors (OTFTs) with bilayer insulators, high-k polymer and low temperature crosslinkable polymer, on a flexible plastic substrate. Poly (vinylidene fluoridetrifluoroethylene) (P(VDF-TrFE)) and poly (2-vinylnaphthalene) are used for high-k polymer gate insulator and low temperature crosslinkable polymer insulators, respectively. The mobility of flexible OTFTs is $0.17cm^2/Vs$ at gate voltages -5 V after bending operation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.112-112
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• 2009

Temperature dependence of the ferroelectric properties of poly(vinylidefluoride-trifluoroethylene) copolymer thin films are studied with various insulators such as $SrTa_2O_6$ and $La_2O_3$. Thin films of poly(vinylidene fluoridetrifluoroethylene) 75/25 copolymer were prepared by chemical solution deposition on p-Si substrate. Capacitance-voltage (C-V) and current density (J-V) behavior of the Au/P(VDF-TrFE)/Insulator/p-Si structures were studied at ($150-200\;^{\circ}C$) and dielectric constant of the each insulators were measured to be about 15 at $850\;^{\circ}C$ for 10 minutes. Memory window width at 5 V bias the MFIS(metal-ferroelectric-insulator-semiconductor) structure with as deposited films was about 0.5 V at high temperature ($200\;^{\circ}C$). And the memory window width increased as voltage increased from 1 V to 5 V.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.500-500
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• 2011

With recent advances in flexible and stretchable electronics, the development of physically responsive field-effect transistors (physi-FETs) that are easily integrated with transformable substrates may enable the omnipresence of physical sensing devices in electronic gadgets. However, physical stimuli typically induce whole sensing physi-FET devices under global influences that also cause changes in the parameters of FET transducers, such as channel mobility and dielectric capacitance that prevent proper interpretations of response in sensing materials. Extended-gate structures with isolated stimuli have been used recently in physi-FETs to demonstrate performances of sensing materials only. However, such approaches are limited to prototype researches since isolated stimuli rarely occur in real-life applications. In this report, we theoretically and experimentally demonstrated that integrating piezoelectric nanocomposites directly into flexible organic FETs (OFETs) as gate dielectrics provides a general research direction to physi-FETs with a simple device structure and the capability of precisely investigating functional materials. Measurements with static stimulations, which cannot be performed in conventional systems, exhibited giant-positive d33 values of nanocomposites of barium titanate (BT) NPs and poly (vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)).

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.393-395
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• 2009

We fabricated oxide and oxide/organic hybrid TFTs on a glass substrate using the photolithography process under $200^{\circ}C$. We adopt the solution processed organic ferroelectric materials of P(VDF-TrFE) and polyimide (KSPI) insulator for 1-T structure memory and flexible device, respectively. All devices have successfully operated and showed the possibility of hybrid TFTs for the application to the flexible electronic devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.427-427
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• 2012

Ferroelectric-gate field effect transistor based memory using a nanowire as a conducting channel offers exceptional advantages over conventional memory devices, like small cell size, low-voltage operation, low power consumption, fast programming/erase speed and non-volatility. We successfully fabricated ferroelectric nonvolatile memory devices using both n-type and p-type Si nanowires coated with organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] via a low temperature fabrication process. The devices performance was carefully characterized in terms of their electrical transport, retention time and endurance test. Our p-type Si NW ferroelectric memory devices exhibit excellent memory characteristics with a large modulation in channel conductance between ON and OFF states exceeding $10^5$; long retention time of over $5{\times}10^4$ sec and high endurance of over 105 programming cycles while maintaining ON/OFF ratio higher $10^3$. This result offers a viable way to fabricate a high performance high-density nonvolatile memory device using a low temperature fabrication processing technique, which makes it suitable for flexible electronics.

• Journal of the Korean Applied Science and Technology
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• v.35 no.4
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• pp.1206-1212
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• 2018

In this study, the polarization reversal characteristics of thin film capacitors with a thickness of 100 nm or less fabricated with ferroelectric polymer were measured and analyzed. For the fixed film thickness, polarization reversal occurred at higher coercive fields as the applied maximum electric field increased. For the fixed maximum electric field, polarization reversal occurred at the same coercive field irrespective of the thickness of the thin film. The proportional constant values between the logarithmic electric field and the logarithmic scale frequency were $0.12{\pm}0.01$ for all measurements. As a result, the ferroelectric polymer capacitors consistently exhibited polarization reversal characteristics without any size effects up to a thickness of 40 nm. This study shows the possibility of a polymer memory device that can operate at low voltage, which is useful for predicting the behavior of a low-voltage operating polymer memory device.

• Membrane and Water Treatment
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• v.13 no.5
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• pp.235-243
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• 2022

The paper presents the effect of operating temperatures and flow rates on the distillate flux that can be obtained from a hydrophobic membrane having the characteristics: pore size of 0.15 ㎛; thickness of 130 ㎛; and 85% porosity. That membrane in the present investigation could be the direct contact (DCMD) or the air-gap membrane distillation (AGMD). To model numerically the membrane distillation processes, the two-dimensional computational fluid dynamic (CFD) is used for the DCMD and AGMD cases here. In this work, DCMD and AGMD models have been validated with the experimental data using different flows (Parallel and Counter-current flows) in non-steady-state situations. A good agreement is obtained between the present results and those of the experimental data in the literature. The new approach in the present numerical modeling has allowed examining effects of the nature of materials (Polyvinylidene fluoride (PVDF) polymers, copolymers, and blends) used on thermal properties. Moreover, the effect of the area surface of the membrane (0.021 to 3.15 ㎡) is investigated to explore both the laminar and the turbulent flow regimes. The obtained results found that copolymer P(VDF-TrFE) (80/20) is more effective than the other materials of membrane distillation (MD). The mass flux and thermal efficiency reach 193.5 (g/㎡s), and 83.29 % using turbulent flow and an effective area of 3.1 ㎡, respectively. The increase of feed inlet temperatures and its flow rate, with the reduction of cold temperatures and its flow rate are very effective for increasing distillate water flow in MD applications.