• Journal of Acupuncture Research
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• 제29권2호
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• pp.9-14
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• 2012

Objectives : This study was designed to evaluate the pesticide residue of herb medicine through high density ozone water cleaning system. Materials and Methods : We purchased ginseng(Panax ginseng) on market and sprayed pesticides (Diazinon) on ginseng. We analyzed pesticide residue according to washing methods(untreated, ozone water cleaning, ultrasonic cleaning, Water cleaning). As a result of each washing methods, in ozone water cleaning method pesticide residue was much less remained than in Ultrasonic Cleaning method and water cleaning method. Conclusions : High density ozone water cleaning is the best method for removing pesticides of herbal medicine.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권12호
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• pp.579-585
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• 2003

Recently the utilization of the ozone dissolved de-ionized water(DI-O3 water) in semiconductor wet cleaning process to replace the conventional RCA methods has been studied. In this paper, we propose the water-electrode type ozone generator which has the ozone gas characteristics of the high concentration and high purity to produce the high concentration DI-O3 water for the silicon wafer surface cleaning process. The ozone generator has the dual dielectric tube structure of silent discharge type and the water is both used to electrode and cooling water. We investigate the performance of the proposed ozone generator which has the design goal of the concentration of 7[wt%] and ozone generation quantity of 6[g/hr] at flow rate of 1[$\ell$/min). The experiment results show that the water electrode type ozone generator has the characteristics of 8.48[wt%] of concentration, 8.08[g/hr] of generation quantity and 76.2[g/kWh] of yield and it's possible to use the proposed ozone generator for the DI-O3 water cleaning process of silicon wafer surface.

• 전기학회논문지
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• 제61권1호
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• pp.94-98
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• 2012

The behavior of ozone micro bubble cleaning system was investigated to evaluate the solution as a new method of solar cell wafer cleaning in comparison with former conventional RCA cleaning. We have developed the ozone dissolution system in the ozonated water for more efficient cleaning conditions. The optimized cleaning conditions for solar cell wafer process were 10 ppm of ozone concentration and 12 minutes in cleaning periods, respectively. We have confirmed the cleaning reliability and cell efficiencies after ozone micro bubble cleaning. Using this new cleaning technology, it was possible to obtain higher efficiency, higher productivity, and fast tact time for applying cleaning in the fields on bare ingot wafer, LED wafers as well as the solar cell wafer.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.1089-1092
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• 2003

This paper has been studied on wafer cleaning and photoresist striping in semiconductor fabrication processes using ozone solved deionized water. In this work, we have developed high concentration ozone generating system and high contact ratio ozone solving system to get high efficiency DIO$_3$. Through this study, we obtained 11% ozone gas concentration, 99.5% of ozone efficiency and 51% of solubility in deionized water.

• 반도체디스플레이기술학회지
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• 제4권4호
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• pp.13-17
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• 2005

The behavior of ozone in $NH_4OH$ was investigated to evaluate the solution as a cleaning chemical of the silicon wafer. The solubility of ozone in DI(Deionized) water increased as the oxygen flow-rate decreased and ozone generator power increased. Ozone in DI water showed solubility of 100 ppm or higher at room temperature. Ozone concentration was stabilized at the range of ${\pm}2ppm$ by controlling oxygen flow rate and ozone generator power. On the contrary, the solubility of ozone in $NH_4OH$ was very low and strongly depended on the concentration of $NH_4OH$ and pH. The redox potential of ozone was saturated within 10 minutes in DI water and decreased rapidly with the addition of $NH_4OH$. The behavior of ozone in $NH_4OH$ is well explained by redox potential calculation.

• 대한전기학회논문지
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• 제40권6호
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• pp.626-629
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• 1991

The negative wire of an electrolytic ozone generator, proposed by authors, has been contaminated by attaching the impurity particulate in tap water, which is called BUILD-UP phenomenon. The higher applied voltage and the larger wire diameter have shown the higher build-up rate, which makes the current reducing largely and concurrently the ozone production smaller. It is found that the positive electrode of the ozone generator has a strong SELF-CLEANING effect by detaching the impurity particulate from its surface, which, however, is used us a novel means of solving the build-up problem. As a result, the build-up problem can be solved effectively by applying an alternate square wave pulse voltage to the electrodes so as to get the self-cleaning ability on the both electrodes during each of the half pulse duration time.

• 한국정밀공학회지
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• 제28권10호
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• pp.1217-1223
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• 2011

In this paper, the dielectric barrier discharge plasma generator has been studied for producing of the high concentration ozone gas. Proposed plasma generator has the structure of extremely narrow discharge air gap(0.15mm) in order to realize the high electric field discharge. We investigate the performance of the dielectric barrier discharge plasma generator experimentally and the results show that the generator has very high ozone concentration characteristics of 13.7[wt%/$O_2$] at the oxygen flow rate of 1[${\ell}$/min] of each discharge cell. So, we confirmed that the proposed plasma generator is suitable for the high concentration ozone production facility of the eco-friendly ozone functional water cleaning system in the electronic components cleaning process.

• Korean Chemical Engineering Research
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• 제45권2호
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• pp.203-207
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• 2007

불산과 오존 세정 시 실리콘 웨이퍼 표면의 미세입자를 효과적으로 제거할 수 있는 세정 방법에 대하여 연구하였다. 불산의 농도가 0.3 vol% 이상이 되어야 미세입자가 제거 되었으며, 초음파가 인가된 오존수를 사용 시 제거 효율은 증가되었다. 오존과 불산 세정 단계 이후에 추가로 극미량의(0.01 vol%) 희석 암모니아수 세정을 하면 미세입자가 99%이상 제거됨을 확인하였다. 이는 암모니아수에 의한 웨이퍼 표면의 미세 에칭 효과와 알칼리 영역에서의 재흡착 방지 효과가 동시에 작용함에 기인된다고 보인다. 한편, 불산-오존-희석 암모니아수 세정은 통상의 SC-1 세정과 비교할 때 표면 미세 거칠기가 개선되는 경향을 보였다. 불산-오존-희석 암모니아수 세정은 상온에서도 미세입자를 효과적으로 제거할 수 있는 세정 방법으로, 고온 공정 및 과다한 화학액을 사용하는 기존 습식세정의 대안으로서 기대된다.

• 반도체디스플레이기술학회지
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• 제4권4호
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• pp.19-26
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• 2005

The process optimization of ozone concentration and half life time was investigated in ultra pure water and alkaline solutions for the wet cleaning of silicon wafer surface at room temperature. In the ultra pure water,. the maximum concentration (35 ppm) of ozone was measured at oxygen flow rate of 3 liters/min and ozone generator power over 60%. The half life time of ozone increased at lower power of ozone generator. Additive gases such as $N_2$ and $CO_2$ were added to increase the concentration and half life time of ozone. Although the maximum ozone concentration was higher with the addition of $N_2$ gas, a longer half life time was observed with the addition of $CO_2$. When $NH_4OH$ of 0.05 or 0.10 vol% was added in DI water, the pH of the solution was around 10. The addition of ozone resulted in the half life time less than 1 min. In order to maintain high pH and ozone concentration, ozone was continuously supplied in 0.05 vol% ammonia solutions. 3 ppm of ozone was dissolved in ammonia solutions. The static contact angle of silicon wafer surface became hydrophilic. The particle removal was possible alkaline ozone solutions. The organic contamination can be removed by ozonated ultra pure water and then alkaline solution containing ozone can remove the particles on silicon surface at room temperature.

• 연구논문집
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• 통권33호
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• pp.99-109
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• 2003

Recently the utilization of the ozone dissolved de-ionized water(DIW-$O_3$) in semiconductor wet cleaning process and photoresist stripping process to replace the conventional sulfuric acid and hydro peroxide mixture(SPM) method has been studied. In this paper, we propose the water-electrode type ozone generator which has the characteristics of the high concentration and purity to produce the high concentration DIW-$O_3$ for the photoresist strip process in the semiconductor fabrication. The proposed ozone generator has the dual dielectric tube structure of silent discharge type and the water is both used to electrode and cooling water. Through this study, we obtained the results of the 10.3 wt% of ozone gas concentration at the oxygen gas of 0.5 [liter/min.] and the DIW-$O_3$ concentration of 79.5 ppm.. Through the photoresist stripping test using the produced DIW-$O_3$, we confirmed that the photoresist coated on the silicon wafer was removed effectively in the 12 minutes.