• Journal of IKEEE
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• v.27 no.3
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• pp.288-295
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• 2023

In this work, we investigated the role of oxygen annealing on the performance of Metal-Semiconductor-Metal (MSM) UV photodetector (PD) fabricated by radio frequency (RF)-sputtered Ga₂O₃ films on SiC substrates. Oxygen-nnealed Ga₂O₃ films displayed a notable increase in photocurrent and a faster decay time, indicating a decrease in persistent photoconductivity. This improvement is attributed to the reduction of oxygen vacancies and variation of defects by oxygen post-annealing. Our findings provide valuable insights into enhancing PD performance through oxygen annealing.

• The Korean Journal of Ceramics
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• v.2 no.3
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• pp.131-136
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• 1996

The electrical conductivity of polycrystalline TiO2 samples was measured over the temperature range 1000°-1400℃ and from 0.21 to 10-16 atm of oxygen. Based on the excellent fit observed between the theoretically derived relatin σ3=(Aσ+B)Po2-1/2+D'σ2 and the experimental conductivity data, the nonstoichimetric defect structure of TiO2 was rationalized in terms of a defect model involving quasi-free electrons and both singly and doubly ionized oxygen vacancies. The standard enthalpy of formation for the following defect reactions in TiO2. (a) OO={{{{ { 1} over {2 } }}O2(g)+VO+e'; Δ{{{{ { H}`_{o } ^{a } }}=5.15(eV) (b) OO={{{{ { 1} over {2 } }}O2(g)+VO+2e'; Δ{{{{ { H}`_{0 } ^{ a} }}=6.30(eV) (c) VO=VO+e'; Δ{{{{ { H}`_{0 } ^{a } }}=1.15(eV) were determined from the temperature dependence of A and B obtained from the above relation and from the experimental expression between the electron mobility and temperature. The electrical conductivity of TiO2 in air below approximately 950℃ appears, on the basis of this investigation, to be impurity controlled due to the presence of aluminum rather than intrinsic conduction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.12-12
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• 2010

Time dependence of the shift of the threshold voltage of amorphous hafnium-indium-zinc oxide (a-HIZO) has been reported under on-current stress condition. a-HIZO thin films were deposited on $SiO_2$/Si (100) by rf magnetron sputtering. XPS measurement indicates that the Hf metal cations in a-HIZO system after annealing process reduce oxygen vacancies by binding oxygen. It was found that the Hf metal cation can be effectively incorporated in the IZO thin films as a suppressor against both the oxygen deficiencies and the carrier generation in the ZnO-based system.

• Industry Promotion Research
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• v.1 no.1
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• pp.7-11
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• 2016

It was the electrical properties of IGZO prepared by the annealing in a vaccum and an atmosphere conditions to research the current-voltage characteristics. The IGZO film annealed in a vaccum became an amorphous structure but films annealed in an atmosphere condition had a crystal structure. Because of the content of oxygen vacancies during the annealing processes was changed, and the annealing in an atmosphere condition increased the oxygen vacancy in IGZO. Oxygen vacancy in IGZO increased the current and then it was observed the Ohmic contact at IGZO annealed in an atmosphere conditions. However, the IGZO prepared in a vaccum showed the Schottky contact.

• Journal of the Korean Ceramic Society
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• v.37 no.3
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• pp.271-279
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• 2000

5 m/o Yb-doped SrCeO3 proton conductor was prepared by a solid state reaction method and its total electriccal conductivity measured as a function of both oxygen partial pressure and water vapor partial pressure in the temperature range of 500~100$0^{\circ}C$. From the total conductivity have been deconvoluted the partial conductivities of oxide ions, protons, and holes, respectively, on the basis of the defect model proposed. The equilibrium constant of hydrogen-dissolution reaction, proton concentration, and mobilities of oxygen vacancies and protons have subsequently been evaluated. It is verified that SrCe1-xYbxO3 is a mixed conductor of holes, protons and oxide ions and the proton conduction prevails as temperature decreases and water vapor pressure increases. The heat of water dissolution takes a representative value of $\Delta$HoH=-(140$\pm$20) kJ/mol-H2O, but tends to be less negative with increasing temperature. Migration enthalpies of proton and oxygen vacancy are extracted as 0.83$\pm$0.10 eV and 0.81$\pm$0.01 eV, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.674-677
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• 2011

The dependency of sputtering power on the electrical performances in amorphous HIZO-TFT (hafnium-indium-zinc-oxide thin film transistors) has been investigated. The HIZO channel layers were prepared by using radio frequency (RF) magnetron sputtering method with different sputtering power at room temperature. TOF-SIMS (time of flight secondary ion mass spectrometry) was performed to confirm doping of hafnium atom in IZO film. The field effect mobility (${\mu}FE$) increased and threshold voltage ($V_{th}$) shifted to negative direction with increasing sputtering power. This result can be attributed to the high energy particles knocking-out oxygen atoms. As a result, oxygen vacancies generated in HIZO channel layer with increasing sputtering power resulted in negative shift in Vth and increase in on-current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.885-888
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• 2000

The effects of deposition temperature and post annealing process of ferroelectric PbZr$\sub$0.52/Ti$\sub$0.48/O$_3$(PZT) thin films by pulsed laser deposition (PLD) were investigated. The PZT thin films were deposited at 400, 450, 500, and 550$^{\circ}C$, with/without post annealing at 650$^{\circ}C$ for 30 min. The PZT thin films deposited above 500$^{\circ}C$ without post annealing were crystallized into peroveskite phase, but the PZT thin films deposited below 450$^{\circ}C$ had pyrochlore phase. The PZT thin films deposited below 450$^{\circ}C$ with post annealing also crystallized into pure perovskite. Compared to the PZT thin films which were deposited at 450$^{\circ}C$ and post annealed, the films deposited at 550$^{\circ}C$ have a columnar microstructure and high remnant polarization 28 (${\mu}$C/cm$^2$). With in-situ annealing at oxygen ambient, the PZT thin films reduced oxygen vacancies and increased retained polarization.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.30 no.5 s.248
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• pp.397-404
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• 2006

Effects of surface defect distribution on flame instability during flame-surface interaction are experimentally investigated. To examine chemical quenching phenomenon which is caused by radical adsorption and recombination processes on the surface, thermally grown silicon oxide plates with well-defined defect density were prepared. ion implantation technique was used to control the number of defects, i.e. oxygen vacancies. In an attempt to preferentially remove oxygen atoms from silicon dioxide surface, argon ions with low energy level from 3keV to 5keV were irradiated at the incident angle of $60^{\circ}$. Compositional and structural modification of $SiO_2$ induced by low-energy $Ar^+$ ion irradiation has been characterized by Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS). It has been found that as the ion energy is increased, the number of structural defect is also increased and non-stoichiometric condition of $SiO_x({\le}2)$ is enhanced.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.122.1-122.1
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• 2015

The dependence of electronic properties and local structure of tantalum oxide thin film on oxygen deficiency have been investigated by means of X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and X-ray absorption spectroscopy (XAS). The XPS results showed that the oxygen flow rate change results in the appearance of features in the Ta 4f at the binding energies of 23.2 eV, 24.4 eV, 25.8, and 27.3 eV whose peaks are attributed to Ta1+, Ta2+, Ta3+, Ta4+, and Ta5+, respectively. The presence of nonstoichiometric state from tantalum oxide (TaOx) thin films could be generated by the oxygen vacancies. The REELS spectra suggested the decrease of band gap for tantalum oxide thin films with increasing oxygen deficiency. In addition, XAS spectra manifested both the increase of coordination number of the first Ta-O shell and a considerable reduction of the Ta-O bond distance with the decrease of oxygen deficiency.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.398-398
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• 2013

The electronic properties and the local structure of tantalum oxide thin film with variation of oxygen flow rate ranging from 9.5 to 16 sccm (standard cubic centimeters per minute) have been investigated by X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and X-ray absorption spectroscopy (XAS). The XPS results show that the Ta4f spectrum for all films consist of the strong spin-orbit doublet $Ta4f_{7/2}$ and $Ta4f_{5/2}$ with splitting of 1.9 eV. The oxygen flow rate of the film results in the appearance of new features in the Ta4f at binding energies of 23.2 eV, 24.4 eV, 25.8, and 27.3 eV, these peaks attribute to $Ta^{1+}$, $Ta^{2+}$, $Ta^{4+}$/$Ta^{2+}$, and $Ta^{5+}$, respectively. Thus, the presence of non-stoichiometric state from tantalum oxide ($TaO_x$) thin films could be generated by the oxygen vacancies. The REELS spectra suggest the decrease of band gap for tantalum oxide thin films with increasing the oxygen flow rate. The absorption coefficient ${\mu}$ and its fine structure were extracted from the fluorescence mode of extended X-ray absorption fine structure (EXAFS) spectra. In addition, bond distances (r), coordination numbers (N) and Debye-Waller factors (${\sigma}^2$) each film were determined by a detailed of EXAFS data analysis. EXAFS spectrapresent both the increase of coordination number of the first Ta-O shell and a considerable reduction of the Ta-O bond distance with the increase of oxygen flow rate.