• 한국자동차공학회논문집
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• 제6권2호
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• pp.168-177
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• 1998

The effects of the regeneration parameters such as inlet gas temperature, space velocity, oxygen concentration of the exhaust gas, and initial particulate loading on the oxidation of the particulate inside ceramic cordierite filter have been investigated through an engine experiment. As the inlet gas temperature increases, the remarkable filter temperature occurs owing to the rapid combustion rate. Though the higher space velocity affirms the safe regeneration, it also requires much fuel consumption of the burner. For that reason, the space velocity should be compromised considering the fuel economy. The excessive accumulation of the particulate may cause undesirable regeneration temperatures inside filer even under the optimized regeneration condition. The inlet gas temperature should be selected to overcome the variation of the oxygen concentration which is inherent feature of the diesel engine. It is the most important factor in the regeneration control techniques.

• 유기물자원화
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• 제18권1호
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• pp.66-72
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• 2010

본 연구는 경기도 A지역 자원회수시설에서 연소온도의 변화에 따른 NOx, SOx, CO, HCL, DUST의 발생변화와 보일러 배출가스 온도, 보일러 출구산소 농도, 반건식 반응탑 출구온도, 촉매탑온도, 배출가스 온도의 변화를 분석하였다. SOx, CO, Hcl, DUST는 자원회수시설 내의 연소온도가 상승함에 따라 거의 5 ppm 미만의 일정한 값을 유지한 반면 NOx 는 40 ppm에서 70 ppm으로 증가하는 추세였다. 한편 보일러 배출가스 온도와 촉매탑 온도는 일정치를 유지하였으나 보일러 출구의 산소농도는 조금씩 감소하는 결과를 나타내었다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권2호
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• pp.95-102
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• 2001

Hafnium oxide thin films for gate dielectric were deposited at $300^{\circ}C$ on p-type Si (100) substrates by plasma enhanced chemical vapor deposition (PECVD) and annealed in $O_2$ and $N_2$ ambient at various temperatures. The effect of hydrogen treatment in 4% $H_2$ at $350^{\circ}C$ for 30 min on the electrical properties of $HfO_2$for gate dielectric was investigated. The flat-band voltage shifts of $HfO_2$capacitors annealed in $O_2$ambient are larger than those in $N_2$ambient because samples annealed in high oxygen partial pressure produces the effective negative charges in films. The oxygen loss in $HfO_2$films was expected in forming gas annealed samples and decreased the excessive oxygen contents in films as-deposited and annealed in $O_2$ or $N_2$ambient. The CET of films after hydrogen forming gas anneal almost did not vary compared with that before hydrogen gas anneal. Hysteresis of $HfO_2$films abruptly decreased by hydrogen forming gas anneal because hysteresis in C-V characteristics depends on the bulk effect rather than $HfO_2$/Si interface. The lower trap densities of films annealed in $O_2$ambient than those in $N_2$were due to the composition of interfacial layer becoming closer to $SiO_2$with increasing oxygen partial pressure. Hydrogen forming gas anneal at $350^{\circ}C$ for samples annealed at various temperatures in $O_2$and $N_2$ambient plays critical role in decreasing interface trap densities at the Si/$SiO_2$ interface. However, effect of forming gas anneal was almost disappeared for samples annealed at high temperature (about $800^{\circ}C$) in $O_2$ or $N_2$ambient.

• 한국연소학회:학술대회논문집
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• 한국연소학회 2001년도 제22회 KOSCI SYMPOSIUM 논문집
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• pp.75-81
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• 2001

MCVD(modified chemical vapor deposition) used in making optical-fiber currently utilizes the hydrogen-oxygen burner as a energy supply source. To improve the productivity and to reduce the manufacturing cost of optical-fiber, a natural gas-oxygen burner has been developed. The manufacturing processes of optical-fiber consist of vapor deposition, collapse and drawing processes. Among these processes, the vapor deposition and the collapse processes are important in terms of improving the productivity and saving the production cost. The vapor deposition and collapse processes are performed by combustion heat and flame force supplied by a burner. So the flame force of the burner used in these processes is required to have an optimal and consistent value in order to allow uniform heating and collapse of quartz tube. In this regard, the momentum ratio of natural gas and oxygen has been optimally determined by modification of a burner and the inlet flow pass also has been modified.

• Korean Chemical Engineering Research
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• 제58권4호
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• pp.610-617
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• 2020

In process installations, chemicals operate at high temperature and high pressure. Propylene is used as a basic raw material for manufacturing synthetic materials in the petrochemical industry; However, it is a flammable substance and explosive in the gaseous state. Thus, caution is needed when handling propylene. To prevent explosions, an inert gas, carbon dioxide, was used and the changes in the extent of explosion due to changes in pressure and oxygen concentration at 25 ℃, 100 ℃, and 200 ℃ were measured. At constant temperature, the increase in explosive pressure and the rates of the explosive pressure were observed to rise as the pressure was augmented. Moreover, as the oxygen concentration decreased, the maximum explosive pressure decreased. At 25 ℃ and oxygen concentration of 21%, as the pressure increased from 1.0 barg to 2.5 bar, the gas deflagration index (K_g) increased significantly from 4.71 barg·m/s to 18.83 barg·m/s.

• 한국전기전자재료학회논문지
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• 제18권7호
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• pp.652-655
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• 2005

ZnO thin films on (001) $Al_2O_3$ substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YAG laser with a wavelength of 266 nm. The influence of the deposition parameters, such as oxygen gas flow, substrate temperature and laser energy density variation on the properties of the grown film, was studied. The experiments were performed for substrate temperatures in the range of $300\~450^{\circ}C$ and oxygen gas flow rate of $100\~900$ sccm. We investigated the structural and optical properties of ZnO thin films using X-ray diffraction(XRD) and photoluminescence(PL).

• 대한전기학회:학술대회논문집
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• 대한전기학회 2015년도 제46회 하계학술대회
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• pp.1145-1146
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• 2015

In this study, HAZO thin films were deposited on glass substrates at room temperature via co-sputtering with RF magnetron sputter. The effects of additive oxygen gas in sputtering on the structural and optical characteristics of HAZO thin films were investigated using X-ray diffraction and UV/Vis spectrometer. The experimental results confirmed that the hafnium oxides formed in the HAZO films when they were deposited with oxygen gas, which affected on the structure and transmittance of the films.

• 한국미생물·생명공학회지
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• 제22권6호
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• pp.659-664
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• 1994

In order to predict gas hold-up and oxygen transfer rate during sisomicin fermentation employing air lift fermentor, simulated media similar to fermentation broths in rheological proper- ties were prepared and used. Rheological properties of fermentation broths from 40 hours and 60 hours of cultivation were analyzed by applying to Power's Law equation. Regardless of addition and no addition of MgSO$_{4}$, the tendencies, that n value was decreased and K value was increased as aeration rate was increased, were shown. Simulated media of twelve different fermentation broths were formulated in a range of 0.7 to 2.1% CMC, and the values of gas hold-up and k$_{L}$a depending on superficial air velocity were measured using these simulated media. And the relation- ships, $\varepsilon$=$\alpha$U$_{Gr}$$\beta$, K$_{L}$a=$\gamma$U$_{Gr}$$\delta$ were obtained, and these equations are thought to be used to predict the values of gas hold-up and k$_{L}$a during fermentation.

• 한국안전학회지
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• 제16권4호
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• pp.109-114
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• 2001

Explosive characteristics of the city gas were determined by using the gas explosion apparatues. The explosive range is determined between lower explosive limit of 5.0% and upper explosive limit of 15.3% at atmosphere and even though the oxygen concentration is decreased, lower explosive limit is not changed, but upper explosive limit is rapidly decreased. The minimum oxygen for combustion is determined 10%. The maximum explosion pressure is determined 5.72$\textrm{cm}^2$ and the maximum rate of explosion pressure rise is oxygen concentration of 12% to determined 160.12$\textrm{cm}^2{\cdot}$sec.

• 한국전기전자재료학회논문지
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• 제17권4호
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• pp.422-425
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• 2004

In this study, the AZO thin films were prepared as a function of oxygen gas flow ratio at room temperature by FTS(Facing Targets Sputtering) apparatus using Zn:Al(metal)-Zn:Al(metal) or Zn(metal)-ZnO:Al(ceramic). The film thickness, crystalline and electric properties of AZO thin film was evaluated by $\alpha$-step, XRD and 4-point probe. In the results, the resistivity of AZO thin film was shown the lowest value about 8${\times}$10$^{-2}$ $\Omega$-cm(Zn:Al-Zn:Al), 3${\times}$10$^{-1}$ $\Omega$-cm(Zn-ZnO:Al) at the oxygen gas flow ratio 0.3. And the AZO thin film has good crystalline at oxygen gas flow ration 0.4, using Zn:Al-Zn:Al targets.