• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.36D no.4
• /
• pp.63-69
• /
• 1999

The electrical properties of rf-magnetron sputtered $Ba_{0.5}Sr_{0.3}TiO_3$ (BST) capacitors were investigated by varying annealing temperature and atmosphere of the rapid thermal annealing (RTA). The electrical properties of Pt/BST/Pt capacitors were found to strongly depend on the RTA condition. It seems that the dependence of the electrical properties of the Pt/BST/Pt capacitors on the RTA condition is related to the oxygen vacancies in BST thin films. In order to clarify the relation between the oxygen vacancies and the electrical properties of Pt/BST/Pt capacitors, we have examined the two different annealing methods. One annealing method was performed in $O_2$ gas and the other was done in $O_2$-plasma at the same condition of 450$^{\circ}C$, 20 mtorr. It was found that the leakage current densities of $O_2$-plasma annealed capacitor were much lower than those of $O_2$ annealed capacitor. The dielectric constants of $O_2$ annealed capacitor decreased about 14% comparing with those of as-deposited. In contrast, there was no decrease in the dielectric constant of $O_2$-plasma annealed. These results indicate that $O_2$-plasma annealing is very effective in compensation the oxygen vacancies in BST thin films. It can be also concluded that the oxygen vacancies greatly affect the electrical properties of Pt/BST/Pt capacitors.

• Journal of Advanced Marine Engineering and Technology
• /
• v.24 no.6
• /
• pp.61-69
• /
• 2000

Indium-Tin Oxide (ITO) films were prepared on the commercial glass substrate by the Magnetron Sputtering method. The target was a 90wt.% $In_2O_3$-10wt.% $SnO_2$with 99.99% purity. The ITO films deposited by changing the partial pressure of oxygen gas ($O_2$/(Ar+$O_2$)) of 2, 3 and 5% as well as by changing the substrate temperature of $300^{\circ}C$ or $500^{\circ}C$. The influence of substrate pre-annealing and pre-cleaning on the quality of ITO film were examined, in which the substrate temperature was $500^{\circ}C$ and oxygen partial pressure was 3%. The characteristics of films were examined by the 4-point probe, Hall effect measurement system, SEM, AFM, Spectrophotometer, and X-ray diffraction. The optimum ITO films have been obtained when the substrate temperature is $500^{\circ}C$ and oxygen partial pressure is 3%. At optimum condition, the film showed transmittance of 81%, sheet resistivity of $226\Omegatextrm{cm}^2$, resistivity($\rho$) of $5.4\times10^{-3}\Omega$cm, carrier concentration of $1.0\times10^{19}cm^{-3}$, and carrier mobility of $150textrm{cm}^2$Vsec. From XRD spectrum, c(222) plane was dominant in the case of substrate temperature at $300^{\circ}C$, without regarding to oxygen partial pressure. However, in the case of substrate temperature at $500^{\circ}C$, c(400) plane was grown together with c(222) plane, only for oxygen partial pressure of 2 and 3%. In both case of chemical and ultrasonic cleaning without pre-annealing the substrate, it showed much almost same sheet resistivity, resistivity($\rho$), transmittance, carrier concentration, and carrier mobility. In case of $500^{\circ}C$/60min pre-annealing before ITO film deposited, both transimittance and carrier mobility are better than no pre-annealing, because pre-annealing is supposed to remove alkari ions diffusion from substrate. ITO film deposited on the Corning 0080 sybstrate showed a little bit better sheet resistivity, resistivity($\rho$), transimittance, carrier concentration than the film deposited on commercial glass. But no differences between Corning substrate and pre-annealed commercial glass substrate are found.

• Transactions on Electrical and Electronic Materials
• /
• v.17 no.2
• /
• pp.104-108
• /
• 2016

To research the correlation between oxygen vacancy and the electrical characteristics of ZTO, which is made by using a target mixed ZnO:SnO₂=1:1, the ZnO, SnO₂ and ZTO were analyzed by PL, XPS, XRD patterns and electrical properties. It was compared with the electron orbital spectra of O 1s in accordance with the electrical characteristics of ZnO, SnO₂ and ZTO. The electrical characteristics of ZTO were improved by increasing the annealing temperatures, due to the high degree of crystal structures at a high temperature, and the physical properties of ZTO was similar to that of ZnO. The amorphous structure of SnO₂ was increased with increasing the temperature. The Schottky contact of oxide semiconductors was formed using the depletion region, which is increased by the electron-hole combination due to the annealing processes. ZnO showed the Ohmic contact in spite of a high annealing temperature, but SnO₂ and ZTO had Schottky contact. As such, it was confirmed that the electrical properties of ZTO are affected by the molecules of SnO₂.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.354-357
• /
• 2002

Thermally grown gate oxide on 4H-SiC wafer was investigated. The oxide layers were grown at l150$^{\circ}C$ varying the carrier gas and post activation annealing conditions. Capacitance-Voltage(C-V) characteristic curves were obtained and compared using various gate electrode such as Al, Ni and poly-Si. The interface trap density can be reduced by using post oxidation annealing process in Ar atmosphere. All of the samples which were not performed a post oxidation annealing process show negative oxide effective charge. The negative oxide effective charges may come from oxygen radical. After the post oxidation annealing, the oxygen radicals fixed and the effective oxide charge become positive. The effective oxide charge is negative even in the annealed sample when we use poly silicon gate. Poly silicon layer was dope by POCl$_3$ process. The oxide layer may be affected by P ions in poly silicon layer due to the high temperature of the POCl$_3$ doping process.

• Journal of the Korean Ceramic Society
• /
• v.37 no.2
• /
• pp.168-173
• /
• 2000

YMnO3 thin films were prepared on Pt/Ti/SiO2/Si substrate by chemical solution deposition method. The films were crystallized by heat-treatment at 85$0^{\circ}C$ for 1 hour. Effects of an annealing atmosphere(O2, Ar, vacuum) on the crystallization behavior and electridcal properties were investigated. YMnO3 thin films annealed under Ar atmosphere showed a superior crystallinity and a very strong c-aix preferred-orientation which was a polar axis. Leakage current density of the films decreased with lowering oxygen partial pressure of the annealing atmosphere. C-V and P-E ferroelectric hysteresis were observed only in the thin film heat-treated under Ar atmosphere.In order to prepare YMnO3 thin films having both low leakage current and ferroelectricity, the annealing atmsphere should be kept under a proper oxygen partial pressure which was about 1 Pa in this work. Leakage current density at 1 volt, dielectric constant($\varepsilon$r), remanent polarization(Pr), and coercive field(Ec) were 1.7$\times$10-8 A/$\textrm{cm}^2$, 25, 1.08$\mu$C/$\textrm{cm}^2$, and 100 kV/cm, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.3
• /
• pp.207-212
• /
• 2007

The concentration profiles of deep energy levels($E_c$ -0.23e V, $E_v$+0.36e V and $E_c$ -0.23e V) in platinum-diffused silicon have generally a sharp gradient in the vicinity of the surface of the silicon wafer. In this work two efficient methods are proposed to obtain the uniform concentration profiles throughout the silicon wafer. One is that the platinum diffusion is carried out at $1000^{\circ}C$ for 1h in oxygen atmosphere. In this case the values of obtained uniform concentration, $1{\times}10^{15}cm^{-3}$ for the $E_c$ -0.23e V level, and 1{\times}10^{14}cm^{-3}$ for the $E_c$ -0.52e V level, are very restricted, respectively. The other is two-step annealing process. The platinum diffusion is carried out at $850{\sim}1100^{\circ}C$ in a nitrogen ambient for 1h and then the annealing is performed at $1000^{\circ}C$ in oxygen ambient after removing platinum-source from the platinum diffused samples. The advantage of this method is that the uniform concentration of these levels required power devices can be controlled by setting the desired temperatures when the platinum diffusion is carried out in nitrogen ambient.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.12
• /
• pp.965-971
• /
• 2001

$\beta$-Ga$_2$O$_3$ nanobelts and nanoparticles were synthesized from mechanically ground GaN powders with thermal annealing in a nitrogen atmosphere and an oxygen atmosphere, respectively. The study of field emission scanning electron microscopy (FESEM) on the microstructures of nanomaterials revealed that the nanobelts synthesized in the nitrogen atmosphere are with the range of 20~1000nm width and 10 ~100nm thickness, and that nanomaterials are nanoparticles with 20~50nm radius obtained by thermal annealing in an oxygen atmosphere. The crystal structure of the $\beta$-Ga$_2$O$_3$ nanobelts and nanoparticles was in this study investigated by X-ray diffractometer (XRD) and high-resolution transmission electron microscope (HRTEM). The formation processes of the nanobelts and nanoparticles will be discussed in this paper.

• Journal of the Korean Ceramic Society
• /
• v.40 no.10
• /
• pp.949-953
• /
• 2003

Blue emitting CaWO$_4$ thin films were deposited by rf magnetron sputtering. The effect of sputtering parameters and annealing conditions on the luminescent properties were investigated. Structural and stoichiometric properties of thin films were affected by $O_2$/Ar gas ratio and substrate temperature. Post-annealing caused the phosphor thin films to emit improved luminescent properties. The atomic composition of films might depend on annealing atmosphere, which resulted in the changes of luminescent properties. Blue-green emission that was due to oxygen vacancies was observed. However, by controlling oxygen defects, only blue emission could be obtained.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.30A no.8
• /
• pp.34-41
• /
• 1993

Effect of high temperature annealing conditions on Ta$_{2}O_{5}$ thin films was investigated. Ta$_{2}O_{5}$ thin films were deposited on P-type silicon substrates by plasma-enhanced chemical vapor deposition (PECVD) using tantalum ethylate. Ta(C$_{2}H_{5}O)_{5}$, and nitrous oxide. N$_{2}$O. The microstructure changed from amorphous to polycrystalline above 700.deg. C annealing temperature. The refractive index, dielectric onstant and leakage current of the film increased as annealing temperature increased. However, annealing in oxygen ambient reduced leakage currents and dielectric constant due to the formation of interfacial SiO$_{2}$ layer. By optimizing annealing temperature and ambient, leakage current lower than 10$^{-8}$ A/cm$^{2}$ and maximum capacitance of 9 fF/${\mu}m^{2}$ could be obtained.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.9
• /
• pp.677-680
• /
• 2012

The dependency of annealing temperature on the electrical performances in amorphous silicon-zinc-tin-oxide thin film transistors (SZTO-TFT) has been investigated. The SZTO channel layers were prepared by using radio frequency (RF) magnetron sputtering method with different annealing treatment. The field effect mobility (${\mu}_{FE}$) increased and threshold voltage ($V_{th}$) shifted to negative direction with increasing annealing temperature. As a result, oxygen vacancies generated in SZTO channel layer with increasing annealing temperature resulted in negative shift in $V_{th}$ and increase in on-current.