• 한국자기학회:학술대회 개요집
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• 한국자기학회 2016년도 임시총회 및 하계학술연구발표회
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• pp.137-137
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• 2016

• 산업진흥연구
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• 제1권1호
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• pp.7-11
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• 2016

IGZO의 접합특성을 조사하기 위해서 진공 중에서와 대기 중에서 열처리를 하여, 전지적인 특성을 조사하였다. 진공 중에서 열처리를 한 IGZO는 비정질특성을 나타내었지만 대기 중에서 열처리를 하면 결정질 특성을 가졌다. 열처하는 방법에 따라서 산소공공의 함량이 달라지기 때문이다. 대기 중에서 열처리를 하면 IGZO의 산소공공이 증가하였다. 산소공공은 전류를 증가시키고 따라서 대기 중에서 열처리를 한 IGZO는 오믹 접합을 나타내었다. 그러나 진공 중에서 열처리를 한 IGZO는 쇼키접합을 나타냈다.

• 대한금속재료학회지
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• 제48권1호
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• pp.77-84
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• 2010

Annealing characteristics of an oxygen free copper (OFC) processed by differential speed rolling (DSR) were investigated in detail. An OFC sample with a thickness of hum was rolled to 35% reduction at ambient temperature without lubrication, varying the differential speed ratio from 1.0:1 to 2.2:1, and then annealed for 0.5h at various temperatures from 100 to $400^{\circ}C$. Different recrystallization behavior was observed depending on the differential speed ratio, especially in the case of annealing at $200^{\circ}C$ Complete recrystallization occurred in the specimens annealed at temperatures above $250^{\circ}C$ regardless of the differential ratios. The hardness distribution in the thickness direction of the rolled OFC sheets varied depending on the differential speed ratios. These annealing characteristics were explained by the magnitude of shear strain introduced during rolling.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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• pp.77-81
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• 2003

The $Sr_{0.7}Bi_{2.6}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode(Pt/$TiO_2/SiO_2$/Si) using RF magnetron sputtering method. The structural and electrical properties of SBT capacitors were influenced with annealing atmosphere. In the XRD pattern, the SBT thin films in all annealed atmosphere had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized in all annealing atmosphere and grains largely grew in oxygen annealing atmosphere. The dielectric constant and leakage current density of capacitors annealed oxygen atmosphere are 340 and $2.13{\times}10^{-9}[A/cm^2]$ respectively.

• Transactions on Electrical and Electronic Materials
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• 제16권1호
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• pp.34-36
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• 2015

Amorphous SiZnSnO(SZTO) thin film transistors(TFTs) have been fabricated by RF magnetron sputtering process, and they were annealed in air and in wet ambient. The electrical performance and the structure were analyzed by I-V measurement, XPS, AFM, and XRD. The results showed improvement in device performance by wet annealing process compared to air annealing treatment, because free electron was shown to be increased due to reaction of oxygen and hydrogen generating oxygen vacancy. This is understood by the generation of free electrons. We expect the wet annealing process to be a promising candidate to contributing to high electrical performance of oxide thin film transistors for backplane device applications.

• 한국재료학회지
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• 제22권8호
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• pp.385-389
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• 2012

Significant improvements in the switching voltage distribution are required for the development of unipolar resistive memory devices using $MnO_x$ thin films. The $V_{set}$ of the as-grown $MnO_x$ film ranged from 1 to 6.2 V, whereas the $V_{set}$ of the oxygen-annealed film ranged from 2.3 to 3 V. An excess of oxygen in an $MnO_x$ film leads to an increase in $Mn^{4+}$ content at the $MnO_x$ film surface with a subsequent change in the $Mn^{4+}/Mn^{3+}$ ratio at the surface. This was attributed to the change in $Mn^{4+}/Mn^{3+}$ ratios at the $MnO_x$ surface and to grain growth. Oxygen annealing is a possible solution for improving the switching voltage distribution of $MnO_x$ thin films. In addition, crystalline $MnO_x$ can help stabilize the $V_{set}$ and $V_{reset}$ distribution in memory switching in a Ti/$MnO_x$/Pt structure. The improved uniformity was attributed not only to the change of the crystallinity but also to the redox reaction at the interface between Ti and $MnO_x$.

• Bulletin of the Korean Chemical Society
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• 제28권8호
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• pp.1341-1345
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• 2007

The surface chemistry of D2O dosed Zircaloy-4 (Zry-4) surface followed by Ar-ion bombardment and annealing was studied by means of X-ray photoelectron spectroscopy (XPS) and Ultraviolet photoelectron spectroscopy (UPS). In the XPS study, Ar-ion bombardment caused decrease of the oxygen on the surface region of Zry-4 and therefore led to change the oxidation states of the zirconium from oxide to metallic form. In addition, oxidation states of zirconium were changed to lower oxidation states of zirconium due to depopulation of oxygen on the surface region by annealing. Up to about 787 K, the bulk oxygen diffused out to the subsurface region and after this temperature, the oxygen on the surface of Zry-4 was depopulated. UPS study showed that the valence band spectrum of the D2O exposed Zry-4 exhibited a dominant peak at around 13 eV and no clear Fermi edge was detected. After stepwise Ar+ sputtering processes, the decrease of the oxygen on the surface of Zry-4 led to suppress the dominant peak around 13 eV, the peak around 9 eV and develop a new peak of the metallic Zr 4d state (20.5-21.0 eV) at the Fermi level.

• 센서학회지
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• 제25권4호
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• pp.252-256
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• 2016

Epitaxially grown GaN layers have a high surface state density, which typically results in a surface leakage current and a photoresponse in undesirable wavelengths in GaN optoelectronic devices. Surface passivation is, therefore, an important process necessary to prevent performance degradation of GaN UV photodetectors. In this study, we propose oxygen-enhanced thermal treatment as a simple surface passivation process without capping layers. The GaN UV photodetector fabricated using a thermal annealing process exhibits improved electrical and photoresponsive characteristics such as a reduced dark current and an enhanced photoresponsive current and UV-to-visible rejection ratio. The results of this study show that the proposed surface passivation method would be useful to enhance the reliability of GaN-based optoelectronic devices.

• 한국진공학회지
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• 제8권3B호
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• pp.333-339
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• 1999

$RuO_2$ thin films were prepared with various deposition conditions by rf magnetron sputtering. The films were annealed in vacuum, air, and air-vacuum, after that, the structural and electrical properties of the films were investigated. As the substrate temperature increases, the preferred orientation of the films changes from (101) to (200), and the grain size increases; especially, at $500^{\circ}C$, the size considerably increases. The preferred orientation of the films changes from (200) to (101) and the roughness of surface increase with the increase in oxygen partial pressure. The lowest value of resistivity of $RuO_2$ we prepared is $1.5\times 10^{-5}\Omega\codt\textrm{cm}$ at the conditions of $400^{\circ}C$ and 10% of oxygen partial pressure. After the processes of annealing, the films deposited at $400^{\circ}C$ and a oxygen partial pressure of 10% were relatively stable. The films deposited at $500^{\circ}C$ have denser structure and smoother surface when the films are annealed in vacuum after annealing in air.

• 한국표면공학회지
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• 제36권1호
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• pp.99-107
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• 2003

The diffusion coefficient of Xe-133 was obtained from an annealing test. The specimens were made from a UO$_2$ single crystal powder with natural enrichment. Weight and grain size were 300mg and ($23\mu\textrm{m}$, respectively. Oxygen potentials were obtained from an oxygen sensor. Released fractions were obtained from both results of gamma scans and quantitative analysis with MCNP code, The annealing test was performed at three temperatures at once. Diffusion coefficients of Xe-133 were calculated using slope of Booth theory in each O/M ratios. Activation energy and the pre-exponential factor of the diffusion coefficient were obtained. The activation energy of near stoichiomeric $UO_2$ is 310 kJ/mol. The measured values of near stoichiometric $UO_2$ are very close to other data available. Diffusion coefficients increase with hyper-stoichiometry, due to higher concentration of cation vacancies.