• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.131.2-131
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• 1998

• Progress in Superconductivity
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• 제2권2호
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• pp.71-75
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• 2001

The effect of annealing step-edges of LaAlO$_3$ and MgO single crystal substrates on YBa$_2$Cu$_3$O$_{7}$ junction has been studied. The step-edge was fabricated by argon ion milling and was annealed at 105$0^{\circ}C$ in 1 attn oxygen pressure. We compared AFM image near step-edge of the substrates between before and after annealing process. And YBa$_2$Cu$_3$O$_{7}$ thin film was deposited on the step-edge by a standard pulsed laser deposition. The step-edge junctions were characterized by current-voltage curves at 77 K. The annealing of step-edges of MgO substrate improved the current-voltage characteristic of Josephson junction: double steps in the current-voltage characteristic disappeared. However the annealing for LaAlO$_3$ did not improve the junction property.rty.

• 한국전기전자재료학회논문지
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• 제25권4호
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• pp.304-308
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• 2012

Transparent thin film transistors (TTFT) were fabricated using the rf magnetron sputtered ZnO-$SnO_2$ films as active layers. A ceramic target whose Zn atomic ratio to Sn is 2:1 was employed for the deposition of ZnO-$SnO_2$ films. To study the post-annealing effects on the properties of TTFT, ZnO-$SnO_2$ films were annealed at $200^{\circ}C$ or $400^{\circ}C$ for 5 min before In deposition for source and drain electrodes. Oxygen was added into chamber during sputtering to raise the resistivity of ZnO-$SnO_2$ films. The effects of oxygen addition on the properties of TTFT were also investigated. 100 nm $Si_3N_4$ film grown on 100 nm $SiO_2$ film was used as gate dielectrics. The mobility, $I_{on}/I_{off}$, interface state density etc. were obtained from the transfer characteristics of ZnO-$SnO_2$ TTFTs.

• 한국초전도ㆍ저온공학회논문지
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• 제16권1호
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• pp.6-8
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• 2014

The influence of quenching temperature, heating atmosphere and annealing time on superconducting characteristics has been studied for $LuBa_2Cu_3O_{7-z}$ compound which has been recently synthesized in a nearly phase-pure form. Resistivity measurements for the as-prepared sample heated at $300^{\circ}C$ in oxygen and subsequently quenched into liquid nitrogen revealed that there is no significant change in $T_c$. On the other hand, $T_c$ of the sample slightly increased when the sample was heated at $300^{\circ}C$ either in air or in $N_2$ atmosphere. It was also found that $T_c$ of the sample decreased when the annealing temperature in $N_2$ atmosphere increased above $400^{\circ}C$. The experimental results indicated that the as-prepared sample is under overdoped state. The enhanced superconducting transition observed in the samples after heating at $300^{\circ}C$ in air or $N_2$ atmosphere was discussed in conjunction with a slight removal of oxygen and ordering of oxygen atoms in the as-prepared sample.

• 한국표면공학회지
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• 제50권2호
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• pp.125-130
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• 2017

ZnO nanowires were synthesized and annealed at various temperatures of $500-800^{\circ}C$ in oxygen atmosphere to investigate hydrogen gas sensing properties. The diameter and length of the synthesized ZnO nanowires were approximately 50-100 nm and a few $10s\;{\mu}m$, respectively. $H_2$ gas sensing performance of the ZnO nanowires sensor was measured with electrical resistance changes caused by $H_2$ gas with a concentration of 0.1-2.0%. The response of ZnO nanowires at room temperature to 2.0% $H_2$ gas is found to be two times enhanced by annealing process in $O_2$ atmosphere at $800^{\circ}C$. In the current study, the effect of heat treatment in $O_2$ atmosphere on the gas sensing performance of ZnO nanowires was studied. And the underlying mechanism for the sensing improvement of the ZnO nanowires was also discussed.

• 한국전기전자재료학회논문지
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• 제29권1호
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• pp.11-16
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• 2016

The conduction behavior and electron concentration change in a-IGZO thin-films according to the RTA (rapid thermal annealing) were studied. The electrical characteristics of TFTs (thin-film-transistors) annealed by different temperatures were measured. The sheet resistance, electron concentration, and oxygen vacancy of a-IGZO film were measured by the four-point-probe-measurement, hall-effect-measurement, and XPS analysis. The RTA process increased the driving current of IGZO TFTs but the VTH shifted to the negative direction at the same time. When the RTA temperature is higher than $250^{\circ}C$, the leakage current at off-state increased significantly. This is attributed to the increase of oxygen vacancy resulting in the increase of electron concentration. We demonstrate that the RTA is a promising process to adjust the VTH of TFT because the RTA process can easily modify the electron concentration and control the conductivity of IGZO film with short process time.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2003년도 High Temperature Superconductivity Vol.XIII
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• pp.69-69
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• 2003

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2002년도 High Temperature Superconductivity Vol.XII
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• pp.68-68
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• 2002

• 한국표면공학회지
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• 제29권6호
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• pp.766-772
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• 1996

Undoped $SnO_x$ thin films were deposited on Si(100) substrate by using reactive ioassisted deposition technique (R-IAD). In order to investigate the effect of initial oxygen content and heat treatment on the oxidation state and crystalline structure of tin oxide films, $SnO_x$ thin films were post-annealed at 400~$600^{\circ}C$ for 1 hr. in a vacuum ~$5 \times 10^{-3}$ -3/ Torr or were directly deposited on the substrate of $400^{\circ}C$ and the relative arrival ration ($Gamma$) of oxygen ion to Sn metal varied from 0.025 to 0.1, i.e., average impinging energy ($E_a$) form 25 to 100 eV/atom. As $E_a$ increased, the composition ratio of $N_ON{sn}$ changed from 1.25 to 1.93 in post-annealing, treatment and 1.21 to 1.87 in in-situ substrate heating. In case of post-annealing, the oxidation from SnO to $SnO_2$ was closely related to initial oxygen contents and post-annealing temperature, and the perfect oxidation of $SnO_2$ in the film was obtained at higher than $E_a$=75 eV/atom and $600^{\circ}C$. The temperature for perfect oxidation of $SnO_2$ was reduced as low as $400^{\circ}C$ through in-situ substrate heating. The variation of the chemical state of $SnO_x$ thin films with changing $E_a$'s and heating method were also observed by Auger electron spectroscopy.

• 산업진흥연구
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• 제1권2호
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• pp.7-11
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• 2016

$SnO_2$ 박막의 결정성과 화학적인 결합구조의 변화가 전기적인 특성에 미치는 영향을 조사하였다. 증착한 $SnO_2$은 결정질 특성을 가지며 열처리온도가 증가함에 따라 비정질 특성으로 변하였으며, 산소공공의 함량변화는 열처리 온도가 증가할수록 증가하였다가 감소하였다. 산소공공이 증가하면 결정성이 증가하다가 산소공공이 감소하기 시작하면 비정질특성이 우세하게 나타났다. 이러한 결정성에서 비정질로 변화하는 특성의 차이는 PL 분석에 의한 광학적 특성에서 뚜렷하게 나타났으며, 100도와 150도 열처리를 한 박막에서 가장 큰 차이가 나는 것을 보여주었다. XRD 분석보다는 $SnO_2$ 결정구조의 변화에 대하여 광학적인 특성변화에서 더 뚜렷하게 나타난 이유는 케리어의 이온화에 의한 광학적 여기량이 150도 열처리에서 크게 증가하였기 때문이며, 더 높은 온도에서는 광학적 여기량이 감소한 이유는 산소공공에 의한 케리어가 많지 않았기 때문으로 확인할 수 있다.