• 반도체디스플레이기술학회지
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• 제16권4호
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• pp.75-78
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• 2017

The $CO_2$ gas responsibility of $SnO_2$ thin films was researched with various annealing temperatures. $SnO_2$ was prepared on n-type Si substrate by RF magnetron sputtering system and annealed in a vacuum condition. The bonding structure of $SnO_2$ was changed from amorphous to crystal structure with increasing the annealing temperature, and the content of oxygen vacancy was researched the highest of the annealed at $60^{\circ}C$. The $SnO_2$ annealed at $60^{\circ}C$ had the characteristics of the highest capacitance. The special properties of $CO_2$ gas responsibility was found at the $SnO_2$ thin film annealed at $60^{\circ}C$ with amorphous structure because of the combination with the oxygen vacancies and $CO_2$ gases changed the resistivity. The amorphous structure enhanced the responsibility at the $SnO_2$ surface and the conductivity of $SnO_2$ thin film.

• 센서학회지
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• 제5권3호
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• pp.101-108
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• 1996

Au 또는 Pt를 확산시켜 실리콘 $p^{+}-n$ 접합 다이오드를 제작하였다. Au 또는 Pt의 확산을 $800{\sim}1010^{\circ}C$, 산소 및 질소분위기에서 실시하여 다이오드의 전기적 특성을 분석하였으며, Au 또는 Pt가 확산된 시편을 산소분위기의 $800{\sim}1010^{\circ}C$에서 2차 열처리를 실시한후 이 처리가 소자의 전기적 특성에 미치는 효과에 대해 고찰하였다. $1010^{\circ}C$의 온도에서 1차 확산결과 Pt가 확산된 다이오드의 누설전류는 Au가 확산된 다이오드 누설전류의 75배 였다. $1010^{\circ}C$, 질소분위기에서 1시간동안 Pt가 확산된 시편을 산소분위기에서 $800^{\circ}C$, 1시간동안 2차 열처리하였을 경우에 1차 열처리한 것보다 누설전류가 1/1100로 감소되었다. 초고속 실리콘 $p^{+}-n$ 접합 스위칭 다이오드의 특성을 만족하기 위해서는, Pt를 $1010^{\circ}C$, 질소분위기에선 1시간 확산시킨후 2차 열처리를 $800^{\circ}C$, 산소분위기에서 1시간동안 열처리하는 것이 최적 조건임을 알 수 있었다. 이때 다이오드의 제특성은 역회복시간 4ns, 항복전압 138V, 누설전류1.7nA 그리고 순방향 전압이 1V였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.143-143
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• 2010

In this study, we demonstrate that ZnO deposited onto $SiO_2$ substrates by magnetron sputtering produces p-type ZnO at higher $O_2$ pressure and n-type ZnO at lower $O_2$ pressure. We also report the effect of hydrogen peroxide ($H_2O_2$) on the stability of undoped ZnO thin films. The films were immersed in 30% $H_2O_2$ for 1 min at $30^{\circ}C$ and annealed in $O_2$at $450^{\circ}C$. The carrier concentration, mobility. and conductivity were measured by a Hall effect measurement system. The Hall measurement results for ZnO films untreated with $H_2O_2$ but annealed in $O_2$ indicate that oxygen fraction greater than ~0.5 produces undoped p-type ZnO films, whereas oxygen fraction less than ~0.5 produces undoped n-type ZnO films. This is attributed to the fact that the oxygen vacancies ($V_o$) decrease and the oxygen interstitials ($O_i$) or zinc vacancies ($V_{Zn}$) increase with increasing oxygen atoms incorporated into ZnO films during deposition and $O_2$ post-annealing.

• 한국정보통신학회논문지
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• 제22권4호
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• pp.664-669
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• 2018

본 연구는 투명산화물반도체의 전기적인 특성과 산소공공과의 관계를 알아보기 위해서 $TiO_2$ 박막을 증착하여 MIM 구조를 만들어서 전압전류 특성을 관찰하였다. 산소공공은 XPS분석으로 이루어졌으며, 커패시턴스를 측정하여 전하의 용량이 많은 곳에서 산소공공이 어떤 영향을 주는가에 대하여도 조사하였다. 열처리를 통하여 결정질구조로 변하는 $TiO_2$ 박막은 산소공공이 가장 낮은 곳에서 커패시턴스 값이 가장 높았으며, 전하의 양이 많았다. 따라서 전하의 양이 많은 $TiO_2$박막이 $CO_2$ 가스에 대하여 가장 잘 민감하게 반응하는 것을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.9-13
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• 1995

In this paper, Zinc Oxide films, with a high degree of c-axis orientation, have been grown on glass substrates by a rf magnetron sputtering. The maximum crystal orientation was found to occur with substrate temperature 150$^{\circ}C$, input power 190W, oxygen rate 50%, target-substrate distance 55mm. It is proposed to achieve high-resistivity ZnO films by increasing the annealing temperature. The piezoelectric layers, preferred oriented with (002) perpendicular to the layer with 4.9$^{\circ}$, could be obtained by the annealing temperature 300$^{\circ}C$ in oxygen atmosphere. It is indicated that the relative permittivity is range from 8.9 to 9.8 in the frequency ranging from 10KHz to 5MHz.

• Transactions on Electrical and Electronic Materials
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• 제2권2호
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• pp.16-20
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• 2001

Optoelectronic characteristics of the superlattice diode as a function of deposition temperature and annealing conditions have been studied. The multilayer nanocrystalline silicon/adsorbed oxygen (nc/Si/O) superlattice formed by molecular beam epitaxy (MBE) system. Experimental results showed that deposition temperature of 550$^{\circ}C$, followed by hydrogen annealing leads to best results, in terms of optical photoluminescence (PL) and electrical current-voltage (I-V) characteristics. Consequently, the experimental results of multilayer Si/O superlattic device showed the stable photoluminescence and good insulating behavior with high breakdown voltage. This is very useful promise for Si-based optoelectronic devices, and can be readily integrated with conventional silicon ULSI processing.

• 한국세라믹학회지
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• 제37권6호
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• pp.552-558
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• 2000

LiMn2O4 thin fiolm cathodes for Li-ion secondary battery were fabricated by r.f. magnetron sputtering technique. As-deposited films were amorphous. A spinel structure could not be obtained LiMn2O4 films by in-situ thermal annealing. After post thermal annealing over $700^{\circ}C$ in oxygen atmosphere, LiMn2O4 films prepared above 100 W r.f. power could be crystallized into a spinel structure. The electrochemical property of the LiMn2O4 film cathodes was tested in a Li/1 M LiClO4 in PC/LiMn2O4 cell. From cyclic voltammetry at scan rate of 2mV/sec of 2.5~4.5V, LiMn2O4 electrode prepared by post annealing at 75$0^{\circ}C$ showed good initial capacity. LiMn2O4 electrode prepared by post annealing at 80$0^{\circ}C$ showed the best crycling performance.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.501-502
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• 2008

In this study, P-doped ZnO thin films were prepared on sapphire substrates by pulsed laser deposition and annealing method. The electrical properties were investigated as a function of annealing temperatures at a fixed oxygen pressure. The XRD measurement showed that p-doped ZnO thin films were c-axis oriented. The Hall measurement showed that p-type ZnO thin film was observed. The carrier concentration of $1.18{\times}10^{16}cm^{-3}$ and the mobility of $0.96\;cm^{-3}/Vs$ were obtained for the P-doped ZnO thin film fabricated annealing temperature $850^{\circ}C$.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.1240-1243
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• 2008

The tempering and magnetic annealing are used to improve the soft magnetic properties such as initial permeability coercivity and core loss of the KM35F alloy. The first heat treatmentis performed at the temperature less than the curie temperature of the KM35F alloy to remove the thermal stress for few hours in nitrogen atmosphere. The second stage heat treatment is performed the magnetic annealing at $500{\sim}800^{\circ}C$ for few hours in nitrogen atmosphere, and then quenching to room temperature in absence of oxygen. Finally, magnetic properties of the thermally treated KM35F alloy are investigated for application as a soft magnetic material of the ISO solenoid valve core and plunger.

• 전자공학회논문지D
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• 제34D권9호
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• pp.43-49
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• 1997

The dependence of the electrical properties in planar MQW - APD & pn, and p - i - n photodiode implanted with oxygen on the annealing emperatures and ion dose has been investigated. The oxygen implantation was performed for inter-device isolation. The leakage current of as-impanted p-i-n photodiode obtained was less than 50 nA. An annelaing temperature dependence study shows an abrupt increase of leakge current at 600.deg.C for all devices under study. This indicates that donor complex centers introduced by the chemical activity of oxygen increase with increasing annelaing temperatures. Furthermore, leakage current was highly correlated with oxygen dose due to th eimplanted related defects.