• 열처리공학회지
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• 제13권3호
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• pp.158-162
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• 2000

The high temperature oxidation behavior and the surface defect in Fe-25Mn-1.5A1-0.5C steel was investigated by XRD (X-ray Diffractin) and electron microscopy. The intra- and inter-granular oxides were formed by the selective oxidation of manganese and aluminum, which were identified to MnAl2O4 phase. Aluminum nitride (AlN) was formed in front of these oxides. The ${\gamma}$-matrix was transformed to ${\alpha}$- and ${\varepsilon}$- phases by the selective oxidation of manganese. The surface defect, micro-scab was induced by the difference of the high temperature ductility between the matrix and the inter-granular oxide.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권10호
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• pp.441-446
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• 2003

The chemical mechanical polishing (CMP) process is now widely employed in the ultra large scale integrated (ULSI) semiconductor fabrication. Especially, shallow trench isolation (STI) has become a key isolation scheme for sub-0.13/0.10${\mu}{\textrm}{m}$ CMOS technology. The most important issues of STI-CMP is to decrease the various defects such as nitride residue, dishing, and tom oxide. To solve these problems, in this paper, we studied the planarization characteristics using slurry additive with the high selectivity between $SiO_2$ and $Si_3$$N_4$ films for the purpose of process simplification and in-situ end point detection. As our experimental results, it was possible to achieve a global planarization and STI-CMP process could be dramatically simplified. Also, we estimated the reliability through the repeated tests with the optimized process conditions in order to identify the reproducibility of STI-CMP process.

• 반도체디스플레이기술학회지
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• 제4권3호
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• pp.1-4
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• 2005

Silicon oxynitride films were deposited using ammonia as a nitrogen source via PECVD (plasma enhanced chemical vapor deposition) to study the physical properties of the films. Silane and nitrous oxide were used as silicon and oxygen sources, respectively. The composition of the silicon oxynitride films was well controlled by changing the ratios of the sources and confirmed by XPS. The silicon oxynitride films with high oxygen content showed bigger compressive stress and less refractive index, while the values of surface roughness were around 1 nm, irrespective of the variation of the source ratios.

• 반도체디스플레이기술학회지
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• 제2권4호
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• pp.31-35
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• 2003

We present a formation technique of thin film heater for heat transfer components. Thin film structures of Cr-Si have been prepared on top of alumina substrates by magnetron sputtering. More samples of Mo thin films were prepared on silicon oxide and silicon nitride substrates by electron beam evaporation technology. The electrical properties of the thin film structures were measured up to the temperature of $500^{\circ}C$. The thickness of the thin films was ranged to about 1 um, and a post annealing up to $900^{\circ}C$ was carried out to achieve more reliable film structures. In measurements of temperature coefficient of resistance (TCR), chrome-rich films show the metallic properties; whereas silicon-rich films do the semiconductor properties. Optimal composition between Cr and Si was obtained as 1 : 2, and there is 20% change or less of surface resistance from room temperature to $500^{\circ}C$. Scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) were used for the material analysis of the thin films.

• 한국주조공학회지
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• 제20권4호
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• pp.247-253
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• 2000

Titanium was melted in the CaO-coated alumina crucible and the reaction between the melt and the coating layer was negligible. The volume fraction of the gas porosity was decreased with increasing pressure and the sound bar castings with no porosity was obtained under the Ar atmosphere of the pressure of $300kN/mm^2$. The surface of the casting obtained from CaO-coated graphite mold was slightly rougher than that from graphite without coating. The reaction product of titanium melt with the layer of CaO was mainly titanium oxide and that with graphite crucible was titanium cabide with small amount of titanium nitride.

• 한국정보처리학회:학술대회논문집
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• 한국정보처리학회 2002년도 춘계학술발표논문집 (상)
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• pp.631-634
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• 2002

In this paper we improved that hump occurrence by increased oxidation thickness, and control field oxide recess$(\leq20nm)$, wet oxidation etch time(19HF, 30sec), STI nitride wet cleaning time(99 HF, 60sec + P 90min) and gate pre-oxidation cleaning time(U10min+19HF, 60sec) to prevent hump occurring at STI channel edge.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1051-1054
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• 2009

This paper investigates approaches for improving effective mobility of organic thin film transistors (OTFTs). We consider gate dielectric optimization, whereby we demonstrated >2x increase in mobility by using a silicon-rich silicon nitride ($SiN_x$) gate dielectric for polythiophene-based (PQT) OTFTs. We also engineer the dielectric-semiconductor ($SiN_x$-PQT) interface to attain a 27x increase in mobility (up to 0.22 $cm^2$/V-s) using an optimized combination of oxygen plasma and OTS SAM treatments. Augmentative material systems by combining 1-D nanomaterials (e.g., carbon nanotubes, zinc oxide nanowires) in an organic matrix for nanocomposite OTFTs provided a further boost in device performance.

• Bulletin of the Korean Chemical Society
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• 제25권12호
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• pp.1850-1854
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• 2004

Recently a fullerene isoxazoline was reported as an example for nanoscale connectors in molecular electronic devices. The construction of nanoscale devices is a potentially important area of technology. By using the semiempirical PM3 calculation, we optimized the structures for two fullerene isoxazoline derivatives and thirteen regioisomers of the second addition of a nitride oxide to a fullerene isoxazoline derivative. Our results suggest that fullerene isoxazoline derivatives could be used as nanoscale connectors with the possibility of attaching of spacer units in a specific angle arrangement.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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• pp.416-419
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• 1987

The miniaturization of Bird's Beak generated at the field oxidation has been studied by adding polysilicon layer between the silicon nitride and pad oxide stack, which is the basic structure of Conventional LOCOS. The size and shape of Bird's Beak were intensively observed by SEM, and also the electrical characteristics of Bird's Beak-reduced LOCOS structure were compared with those of Conventional LOCOS. The length of Bird's Beak was reached up to $0.20-0.28{\mu}m$, while about to $0.50-0.53{\mu}m$ in conventional LOCOS, resulting in 60% reduction.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.253-253
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• 2010

유리 기판 상에 시스템 온 패널과 같은 차세대 디스플레이 구현과 평판형 디스플레이의 문제점 해결을 위하여 비휘발성 메모리 소자 등의 전자 소자 집적화와 빠른 구동 속도를 가진 박막트랜지스터가 요구된다. 본 논문에서는 비휘발성 메모리 소자에서 MONOnS 각 layer층의 두께 따른 특성에 대한 연구를 진행하였다. 실험은 ONO 구조를 12.5nm/35nm/2.7nm, 12.5nm/20nm/2.3nm, 8.5nm/10nm/2.3nm, 6.5nm/10nm/1.9nm 의 두께로 증착하였다. ${\Delta}VFB$, Retention time, capacitance을 측정하여 oxide/Nitride/Oxynitride 층의 두께 변화를 통해 최적화된 tunneling layer와 charge storage layer, 그리고 blocking layer의 두께를 알 수 있다.