• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 추계학술대회 논문집
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• pp.90-93
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• 1992

In this paper, MOS characteristics of gate dielectrics prepared by furnace oxidation of Si in an $N_2O$ ambient have been studied. Compared with the oxides grown in $O_2$, $N_2O$ oxides show significantly improved breakdown field and low flat band voltage. Also, $N_2O$ oxide is more controllable for ultrathin film growth than $O_2$ oxide. This improvement is caused by nitrogen incorporation into the $N_2O$ oxide. Therefore, the nitrogen-rich-layer at the Si/$SiO_2$ interface formed during $N_2O$ oxidation not only strengthen $N_2O$ oxide structure at the interface and improves the gate dielectric quality, it also acts as a oxidant diffusion barrier that reduces the oxidation rate significantly.

• Progress in Superconductivity
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• 제3권1호
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• pp.95-98
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• 2001

Recently, NiO films have been studied as a buffer layer to fabricate the superconductor with preferred orientation and as a diffusion barrier to prevent the reaction between superconductor and textured nickel substrate . We fabricated NiO films on textured Ni substrate by thermal oxidation with various variables of temperature, oxidation time, atmosphere, and cooling rate. We investigated the alignment of NiO films by XRD and pole figure and the microstructures by SEM. (200) <001> alignment of NiO film was observed at the oxidation condition of $1200^{\circ}C$ far 10min and slow cooling in O2 atmosphere. During the process in Ar atmosphere, we could also observe the thermal faceting which affects the alignment of NiO alms on Ni substrate.

• 한국표면공학회지
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• 제44권4호
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• pp.125-130
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• 2011

$Cr_2AlC$ compounds were synthesized by hot pressing, and oxidized between 900 and $1200^{\circ}C$ in air for up to 50 hours. They oxidized to a thin $Al_2O_3$ layer containing a small amount of $Cr_2O_3$with the liberation of carbon as CO or $CO_2$ gases. The consumption of Al to form the $Al_2O_3$ layer led to the depletion of Al and enrichment of Cr just below the $Al_2O_3$ layer, resulting in the formation of an underlying $Cr_7C_3$ layer. As the oxidation temperature and time increased, the $Cr_7C_3$ oxide layer and the underlying $Cr_7C_3$ layer thickened. The oxidation resistance of $Cr_2AlC$ was generally good due to the formation of the $Al_2O_3$ barrier layer.

• 한국자기학회지
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• 제14권1호
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• pp.13-17
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• 2004

알루미늄 산화물 절연막에 하프늄의 첨가가 미치는 영향에 관해서 연구하였다. 하프늄을 첨가할 경우 자기저항이 증가하고 자기저항의 온도의존도와 바이어스 전압의존도가 감소함을 관찰하였다. 이는 하프늄의 첨가가 알루미늄 산화물의 결함의 감소를 유발하기 때문이라 판단된다. 하프늄의 첨가된 알루미늄 산화물의 미세구조를 분석한 결과 하프늄이 알루미늄과 혼합됨이 관찰 되었다. 알루미늄과 하프늄의 혼합 금속을 절연막 형성을 위한 금속으로 사용한 결과 하프늄의 첨가된 알루미늄과 동일한 결과를 얻었다. 이로부터 하프늄이 알루미늄과 혼합하면서 절연막 내의 결함을 감소시키고 그에 따른 자기저항의 증가와 자기저항의 온도의존도와 바이어스 전압의존도를 감소시키는 결과를 가져온 것으로 판단된다.

• 한국재료학회지
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• 제13권4호
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• pp.233-238
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• 2003

Ferromagnetic tunnel junctions, Ta/Cu/Ta/NiFe/Cu/$Mn_{75}$ $Ir_{25}$ $Co_{70}$ $Fe_{30}$/Al-oxide, were fabricated by do magnetron sputtering and plasma oxidation process. The effect of annealing temperature on the local transport properties of the ferromagnetic tunnel junctions was studied using contact-mode Atomic Force Microscopy (AFM). The current images reflected the distribution of the barrier height determined by local I-V analysis. The contrast of the current image became more homogeneous and smooth after annealing at $280^{\circ}C$. And the average barrier height $\phi_{ave}$ increased and its standard deviation $\sigma_{\phi}$ X decreased. For the cases of the annealing temperature more than $300^{\circ}C$, the contrast of the current image became large again. And the average barrier height $\phi_{ave}$ decreased and its standard deviation $\sigma_{\phi}$ increased. Also, the current histogram had a long tail in the high current region and became asymmetric. This result means the generation of the leakage current that is resulted from the local generation of a low barrier height region. In order to obtain the high tunnel magnetoresistance(TMR) ratio, the increase of the average barrier height and the decrease of the barrier height fluctuation must be strictly controlled.led.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2006년도 춘계 학술대회 개요집
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• pp.45-47
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• 2006

The rotating components in the hot sections of land-based gas turbine are exposed to severe environments during several tens thousand operation hours at above $1100^{\circ}C$ operation temperature. To protect such components from high temperature oxidation, an intermediate bond coat is applied, typical of a MCrAlY-type metal alloy. This study is concerned with the thermal cyclic behavior of thermal barrier coatings. The MCrAlY bond coatings are deposited by HVOF (High Velocity Oxygen Fuel) method on a nickel-based superalloy (GTD-111). Thermal cyclic tests at $1100^{\circ}C$ in ambient air for various periods of time were used to evaluate the thermal cyclic resistance of the TBC coating. The microstructure and morphology of as-sprayed and of thermal cycled coatings were characterized by scanning electron microscopy (SEM) equipped with energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD).

• 한국재료학회지
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• 제14권8호
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• pp.552-557
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• 2004

Thin Ni-B films, 1 ${\mu}m$ thick, were electrolessly deposited on Cu bus electrode fabricated by electro deposition. The purpose of these films is to encapsulate Cu electrodes for preventing Cu oxidation and to serve as a diffusion barrier against copper contamination of dielectric layer in AC-plasma display panel. The layers were heat treated at $580^{\circ}C$(baking temperature of dielectric layer) with and without pre-annealing at $300^{\circ}C$($Ni_{3}B$ formation temperature) for 30 minutes. In the layer with pre-annealing, amount of Cu diffusion was lower about 5 times than that in the layer without pre-annealing. The difference of Cu concentration could be attributed to Cu diffusion before $Ni_{3}B$ formation at grain boundaries. However, the diffusion behavior of the layer with pre-annealing was similar to that of the layer without pre-annealing after $Ni_{3}B$ formation. With increasing annealing time, Cu concentration of both layers increased due to grain growth.

• 한국재료학회지
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• 제15권9호
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• pp.577-584
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• 2005

Thin Ni-B layer, $1{\mu}m$ thick, was electrolessly deposited on Cu electrode fabricated by electro-deposition. The purpose of the layer is to encapsulate Cu electrodes for preventing Cu oxidation and to serve as a diffusion barrier. The layers were annealed at $580^{\circ}C$ with and without pre-annealing at $300^{\circ}C$ for . 30minutes. In the layer with pre-annealing, the amount of Cu diffusion was lower about 5 times than the layer without pre-annealing. The difference in Cu concentration may be attributed to $Ni_3B$ formation prior to Cu diffusion. However, the difference in Cu concentration decreased during the annealing time of 5 h due to the grain growth of Ni.

• 한국표면공학회지
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• 제54권6호
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• pp.331-339
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• 2021

Environmental barrier coatings(EBCs) are applied to the SiC/SiC ceramic matrix composites(CMCs) in order to protect CMCs from being corroded with water vapor by combustion gas in gas turbine engines. Ytterbium silicates, such as ytterbium monosilicate and ytterbium disilicate, are ones of the candidate materials for EBCs due to their excellent resistance to water vapor corrosion as well as thermal-expansion match with SiC. In this study, ytterbium silicates are fabricated with 2-step solid-state synthesis targeting ytterbium disilicate. After synthesizing ytterbium monosilicate, the mixtures of ytterbium monosilicate and SiO₂ are heat-treated and densified by using pressureless sintering or hot pressing with a variety of heating conditions. The phase formation, thermal expansion, and oxidation behavior are examined with fabricated specimens. The final densified bodies are found to be composites between ytterbium monosilicate and ytterbium disilicate with different ratios, which results in 4.43 to 6.72×10^-6/K range of coefficients of thermal expansion. The probability of these ytterbium silicates for EBC applications is also discussed.

• 한국자기학회지
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• 제15권6호
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• pp.311-314
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• 2005

본 연구에서는 Al-Oxide(AIOx) 에 Ti를 첨가하여. Ti 함량에 따라 자기터널접합의 자기터널링 현상 변화 및 TiA l합금박막의 미세구조, 표면거칠기 변화를 관찰하였다. Ti를 첨가한 TiAlOx 절연층을 사용하여 기존 AlOx를 사용한 경우 보다 높은 터널링 자기저항(Tunneling Magnetoresistance, TMR) 비를 가지는 자기터널접합을 제작하였다. TMR 비의 증가 요인은 Ti를 첨가함에 따라, TiAl 합금박막의 입계가 작아지고, 치밀한 구조를 가져, 우수한 계면평활도를 가지는 균일한 TiAlOx 절연층이 형성되어, 소자의 구조적 안정성이 향상되었기 때문으로 분석하였다. 또한 향상된 구조적 안정성으로 인해 소자의 열적, 전기적 안정성도 크게 증가하였다.