• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1816-1818
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• 1996

A micro-size nonthermal plasma generator, using a $SiO_2$ film as a dielectric barrier, has been studied experimentally for a high frequency ac voltage in 2LPM oxygen gas fed. The $SiO_2$ film as a micro-size dielectric barrier was made by the wet oxidation of n-type Si wafer($220[{\mu}mt]$). It can be generated ozone, as a nonthermal plasma intensity parameter, at very low level of applied voltage about 1[kV] by using the micro-size dielectric barrier. As a result, in case that have no air gap spacing i.e. surface discharge case shows relatively higher ozone concentration rather than that case of the micro-airgap spacing.

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.10a
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• pp.147-147
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• 1997

• Proceedings of the Korean Magnestics Society Conference
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• 2001.10a
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• pp.58-59
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• 2001

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.152-152
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• 2013

Mechanism of energy conversion from chemical to electrical during exothermic catalytic reactions at the metal surfaces has been a fascinating and crucial subject in heterogeneous catalysis. A metal-semiconductor Schottky nanodiode is novel device for direct detection of chemically induced hot electrons which have sufficient energy to surmount the Schottky barrier. We measured a continuous chemicurrent during the hydrogen oxidation under of 760 Torr of O2 and 6 Torr of H2 by using Pt/Si and Pt/TiO2 nanodiodes at reaction temperatures and compared the chemicurrent with the reaction turnover rate. The thermoelectric current was measured by carrying out an experiment under O2 condition for elimination of the background current. Gas chromatograph and source meter were used for measurement of the chemical turnover rate and the chemicurrent, respectively. The correlation between the chemicurrent and the chemical turnover rate under hydrogen oxidation implies how hot electrons generated on the metal surface affect hydrogen oxidation.

• Journal of the Korean Ceramic Society
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• v.27 no.1
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• pp.109-117
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• 1990

Magnetite for Water-based ferrofluid was synthesized by air oxidation of aqueous suspension in the pH range 7-12 at $65^{\circ}C$. The optimum condition of magneite formation was delineated by examining various physicochemcial properties such as Fe2+ content, phase characteristics, MHC and $\sigma$max. The point of zero charge of iron oxide powders obtained at various pH conditions were correlated with the oxidation state of Fe in the iron oxide. The magnetite powder prepared at pH 9 ws dispersed using sodium oleate and sodium dodecylbenzenesulfonate (SDBS) as dispersants, and the dispersion characteristics of the magnetite ferrofluid were examined by means of the fraction of solid dispersed, zeta potential data and FT-IR spectrum. A simple calculation on the potential energy of two interacting magnetite particles showed that the dispersion stability was directly correlated with height of the potential energy barrier or the shape of zeta potential.

• Ceramist
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• v.9 no.6
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• pp.18-23
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• 2006

In this article, the present activities regarding research and development of continuous SiC fiber reinforced ceramic matrix composites (CFCC) in Japan are reviewed. The key technologies in SiC fiber composites are interphase between fiber and matrix and its oxidation resistance. To improve oxidation resistance of interphase, various kinds of technologies such as environment barrier coating, high dense matrix, unti-oxidation matrix, multi-layered intephase have been developed. It is suggested that high performance, affordable processing cost, and excellent reliability will be important factors to be in practical use of CMCs in future.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.4
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• pp.373-377
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• 2004

We have investigated the electrical characterization of metal-oxide-semiconductor (MOS) capacitors formed on the inductively coupled plasma (ICP) etch-damaged both n- and p-type 4H-SiC. We found that there was an effect of a sacrificial oxidation treatment on the etch-damaged surfaces. Current-voltage and capacitance-voltage measurements of these MOS capacitors were used and referenced to those of prepared control samples without etch damage. It has been found that a sacrificial oxidation treatment can improve the electrical characteristics of MOS capacitors on etch-damaged 4H-SiC since the effective interface density and fixed oxide charges of etch-damaged samples have been found to increase while the breakdown field strength of the oxide decreased and the barrier height at the SiC-SiO$_2$ interface decreased for MOS capacitors on etch-damaged surfaces.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.9
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• pp.29-35
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• 1992

Dielectric thin film of N/O (Si$_{3}N_[4}/SIO_{2}$) for high density stacked dynamic-RAM cell was formed by LPCVD and oxidation(Dry & pyrogenic oxidation methods) of the top Si$_{3}N_[4}$ film. The thickness, structure and composition of this film were measured by ellipsometer, high frequency C-V meter, high resolution TEM, AES, and SIMS. The thickness limit of Si$_{3}N_[4}$ film in making thin N/O structure layer was 7nm. In this experiment, the film with thinner than 7nm was not thick enough as oxygen diffusion barrier, and oxygen punched through the film and interfacial oxidation occurred at the phase boundary between Si$_{3}N_[4}$ and polycrystalline silicon electrode.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.219-219
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• 2003

HVOF(High Velocity Oxygen Fuel)법을 사용한 MCrAlY(M=Ni, Co, Fe)계 열차폐 코팅(thermal barrier coating)은 열기관 내부의 극심한 환경 부하에 대해 구조물 표면에 열적, 화학적 장벽을 형성함으로써 구조물의 내구성을 향상시킨다 이와 동시에 열차폐 효과는 구조물의 온도상승 없이 내부 가동 온도를 높일 수 있게 함으로써 열효율을 상승시키고 연료 효율을 높여 가동비용 절감을 이룰 수 있는 동시에 고 연소를 통한 오염원의 배출을 감소시킬 수 있다. 본 연구에서는 $H_2O$$_2$=5:1 분위기 하에서 HVOF법을 사용하여 Hastelloy-X 기판위에 125$\mu\textrm{m}$의 두께로 다음 5종류의 (Ni, Co, Cr)계 MCrAlY 코팅을 용사시켰다. 준비된 (Ni, Co)-Cr-Al-(Y, Ta, Re), (Ni, Co)-Cr-Al-(Y, Re), (Ni, Co)-Cr-Al-(Y, Ta), (Ni, Co)-Cr-Al-Y, (Ni,Co)-Cr-Al-Ir 코팅시편에 대한 산화성질을 조사하기 위해 대기 중 1000, 1100, 120$0^{\circ}C$에서 50, 100, 150, 200시간 등온실험(Isothermal oxidation)을 실시하였고, XRD, SEM/EDS, EPMA를 이용하여 생성된 산화막과 코팅 시편의 조직 변화를 조사하였다. 산화온도와 산화시간이 증가할수록 산화막의 박리가 많이 발생하였으며, 분석 결과 미세하게 분포된 a-Al$_2$O$_3$ 입자, NiCr$_2$O$_4$스피넬 상, 미세한 Cr$_2$O$_3$가 관찰되었고, 코팅 조성 변화에 따라 형성되는 이들 산화물의 존재비가 달라졌으며, 산화온도가 높아질수록 산화속도가 가속화되었다.

• Bulletin of the Korean Chemical Society
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• v.25 no.11
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• pp.1645-1647
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• 2004

Potential energy surfaces for the reaction Al + $O_2{\to}$AlO + O have been calculated with the multireference configuration interaction (MRCI) method using molecular orbitals derived from the complete active space selfconsistent field (CASSCF) calculations. The end-on geometry is the most favourable for the reaction to take place. The small reaction barrier in the present calculation (0.11 eV) is probably an artefact related to the ionicneutral avoided crossing. The charge analysis implies that the title oxidation reaction occurs through a harpooning mechanism. Along the potential energy surface of the reaction, there are two stable intermediates of $AlO_2(C_{{\infty}v}$ and $C_{2v}$) at least 2.74 eV below the energy of reactants. The calculated enthalpy of the reaction (-0.07 eV) is in excellent agreement with the experimental value (-0.155 eV) in part due to the fortuitous cancellation of errors in AlO and $O_2$ calculations.