• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.350-353
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• 2002

High voltage SiC Schottky barrier diodes with field plate structure have been fabricated and characterized. N-type 4H-SiC wafer with an epilayer of ∼10$\^$15/㎤ doping level was used as a starting material. Various Schottky metals such as Ni, Pt, Ta, Ti were sputtered and thermally-evaporated on the low-doped epilayer. Ohmic contact was formed at the backside of the SiC wafer by annealing at 950$^{\circ}C$ for 90 sec in argon using rapid thermal annealer. Field oxide of 550${\AA}$ in thickness was formed by a wet oxidation process at l150$^{\circ}C$ for 3h and subsequently heat-treated at l150$^{\circ}C$ for 30 min in argon for improving oxide quality. The turn-on voltages of the Ni/4H-SiC Schottky diode was 1.6V which was much higher than those of Pt(1.0V), Ta(0.7V) and Ti(0.7). The voltage drop was measured at the current density of 100A/$\textrm{cm}^2$ showing 2.1V for Ni Schottky diode, 1.45V for Pt 1.35V, for Ta, and 1.25V for Ti, respectively. The maximum reverse breakdown voltage was measured 1100V in the file plated Schottky diodes with 101an thick epilayer.

• Journal of the Korean Society of Propulsion Engineers
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• v.14 no.5
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• pp.45-50
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• 2010

Thermal analyses have been performed to study the effect of location of fuel ring and thermal barrier coatings in regenerative cooling channels in a full-scale combustor. For the effective cooling, the fuel ring has better be installed near axial location of the low expansion ratio and low heat flux, and branching of cooling channels is preferable. Also, the radiative cooled nozzle extension is thought to be reasonable for the cooling of combustor walls. Among the possible coatings, $Y_2O_3$ stabilized $ZrO_2$ coating and Ni/Cr coating have been adopted. Compared with Ni/Cr coating which has high oxidation resistance, $Y_2O_3$ stabilized $ZrO_2$ coating, one of ceramic coatings is found to be much effective to sustain the thermal survivability of combustion walls.

• Journal of the Korean Magnetics Society
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• v.11 no.5
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• pp.202-210
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• 2001

Spin dependent tunneling (SDT) junction devices of Ta/NiFe/Ta/NiFe/FeMn/NiFe/AlOx/CoFe/NiFe/Al with in-situ naturally oxidized Al barrier were fabricated using ion beam deposition and dc sputtering in UHV chamber of 10$^{-9}$ Torr. The maximum tunneling magnetoresistance (TMR) and the product resistance by junction (R$_{j}$ A) are 16-17% and 50-60 $\Omega$${\mu}{\textrm}{m}$$^2$, respectively. The values of TMR and (R$_{j}$ A) with field annealing were slightly increased. The TMR and (R$_{j}$ A) dependence versus the junction area size was observed. These results were explained by using sheet resistance effect of bottom electrode and spin channel effects.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2010.05a
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• pp.145-149
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• 2010

Thermal analyses have been performed to study the effect of location of fuel ring and thermal barrier coatings in regenerative cooling channels in a full-scale combustor. For the effective cooling, the fuel ring has better be installed near axial location of the low expansion ratio and low heat flux, and branching of cooling channels is preferable. Also, the radiative cooled nozzle extension is thought to be reasonable for the cooling of combustion walls. Among the possible coatings, $Y_2O_3$ stabilized $ZrO_2$ coating and Ni/Cr coating have been adopted. Compared with Ni/Cr coating which has high oxidation resistance, $Y_2O_3$ stabilized $ZrO_2$ coating, one of ceramic coatings is found to be much effective to sustain the thermal survivability of combustion walls.

• Journal of Korean Society of Environmental Engineers
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• v.34 no.7
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• pp.459-466
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• 2012

In order to improved treatment performance of dielectric barrier discharge (DBD) plasma, plasm + UV process and gas-liquid mixing method has been investigated. This study investigated the degradation of N, N-Dimethyl-4-nitrosoaniline (RNO, indicator of the generation of OH radical). The basic DBD plasma reactor of this study consisted of a plasma reactor (consist of quartz dielectric tube, titanium discharge (inner) and ground (outer) electrode), air and power supply system. Improvement of plasma reactor was done by the combined basic plasma reactor with the UV process, adapt of gas-liquid mixer. The effect of UV power of plasma + UV process (0~10 W), gas-liquid mixing existence and type of mixer, air flow rate (1~6 L/min), range of diffuser pore size (16~$160{\mu}m$), water circulation rate (2.8~9.4 L/min) and UV power of improved plasma + UV process (0~10 W) were evaluated. The experimental results showed that RNO degradation of optimum plasma + UV process was 7.36% higher than that of the basic plasma reactor. It was observed that the RNO decomposition of gas-liquid mixing method was higher than that of the plasma + UV process. Performance for RNO degradation with gas-liquid mixing method lie in: gas-liquid mixing type > pump type > basic reactor. RNO degradation of improved reactor which is adapted gas-liquid mixer of diffuser type showed increase of 17.42% removal efficiency. The optimum air flow rate, range of diffuser pore size and water circulation rate for the RNO degradation at improved reactor system were 4 L/min, 40~$100{\mu}m$ and 6.9 L/min, respectively. Synergistic effect of gas-liquid mixing plasma + UV process was found to be insignificant.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.412-412
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• 2008

ENIG(Electroless Nickel Immersion Gold)is a surface treatment method that is used most widely at fine pitch's SMT and BGA packaging process. ENIG has good diffusion barrier of Ni against solder and good wettability due to Au finish. But when the discoloration occurred on the Au finish of ENIG, some key characteristics related to the quality and reliability of PCB such as bondability, solderability and electrical flowing of packaging process could be deteriorated. In this paper, we have performed the water dip test ($88^{\circ}C$ purified water) which accelerates the galvanic corrosion of Ni diffused from the Ni-P layer. That is, the excessive oxidation of the Ni layer could result in non-wetting of the solder because the flux may not be able to remove excessive oxides. Though Au discoloration have been reported to be caused by Ni oxides in many literature, it is still open to verify and discuss The microstructures and chemical compositions have been investigated using FE-SEM, TEM, FIB, EDS and XPS. As a result, authors have found that the Au discoloration in ENIG type is severely caused by the oxidation of the Ni and the mechanism of Au discoloration can be confirmed through the experiment result of water dip test.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.2
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• pp.63-68
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• 2003

The DC and RF characteristics of $In_{0.5}Ga_{0.5}P/In_{0.22}Ga_{0.78}As/GaAs$ p-HEMTs with a gate oxide layer of various thicknesses ($50{\;}{\AA},{\;}300{\;}{\AA}$) were investigated and compared with those of a Schottky-gate p-HEMT without the gate oxide layer. A prominent improvement in the breakdown voltage characteristics were observed for a p-HEMT having a gate oxide layer, which was implemented by using a liquid phase oxidation technique. The on-state breakdown voltage of the p-HEMT having the oxide layer of $50{\;}{\AA}$was ~2.3 times greater than that of a Schottky-gate p-HEMT. However, the p-HEMT having the gate oxide layer of $300{\;}{\AA}$ suffered from a poor gate-control capability due to the drain induced barrier lowering (DIBL) resulting from the thick gate oxide inspite of the lower gate leakage current and the higher on-state breakdown voltage. The results for a primitive p-HEMT having the gate oxide layer without any optimization of the structure and the process indicate the potential of p-HEMT having the gate oxide layer for high-power applications.

• Journal of IKEEE
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• v.18 no.4
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• pp.447-455
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• 2014

In this research, n-based 4H-MOS Capacitor was fabricated with PECVD (plasma enhanced chemical vapor deposition) process for improving SiC/$SiO_2$ interface properties known as main problem of 4H-SiC MOSFET. To overcome the problems of dry oxidation process such as lower growth rate, high interface trap density and low critical electric field of $SiO_2$, PECVD and NO annealing processes are used to MOS Capacitor fabrication. After fabrication, MOS Capacitor's interface properties were measured and evaluated by hi-lo C-V measure, I-V measure and SIMS. As a result of comparing the interface properties with the dry oxidation case, improved interface and oxide properties such as 20% reduced flatband voltage shift, 25% reduced effective oxide charge density, increased oxide breakdown field of 8MV/cm and best effective barrier height of 1.57eV, 69.05% reduced interface trap density in the range of 0.375~0.495eV under the conduction band are observed.

• Economic and Environmental Geology
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• v.56 no.2
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• pp.167-183
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• 2023

Gases originated from the final SNF (spent nuclear fuel) disposal site are very mobile in the barrier and they may also affect the migration of radioactive nuclides generated from the SNF. Mechanisms of gas-nuclide migration in the multi-barrier and their influences on the safety of the disposal site should be understood before the construction of the final SNF disposal site. However, researches related to gas-nuclide coupled movement in the multi-barrier medium have been very little both at home and abroad. In this study, properties of gas generation and migration in the SNF disposal environment were reviewed through previous researches and their main mechanisms were summarized on the hydrogeological evolution stage of the SNF disposal site. Gas generation in the SNF disposal site was categorized into five origins such as the continuous nuclear fission of the SNS, the Cu-canister corrosion, the oxidation-reduction reaction, the microbial activity, and the inflow from the natural barriers. Migration scenarios of gas in porous medium of the multi-barrier in the SNF repository site were investigated through reviews for previous studies and several gas migration types including ① the free gas phase flow including visco-capillary two-phase flow, ② the advection and diffusion of dissolved gas in pore water, ③ dilatant two-phase flow, and ④ tensile fracture flow, were presented. Reviewed results in this study can support information to design the further research for the gas-nuclide migration in the repository site and to evaluate the safety of the Korean SNF disposal site in view points of gas migration in the multi-barrier.

• Composites Research
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• v.30 no.2
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• pp.84-93
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• 2017

This study investigates thermal and mechanical characterization of environmental barrier coating on the $SiC_f-SiC$ composites. The spherical environmental barrier coating (EBC) powders are prepared using a spray drying process for flowing easily during coating process. The powders consisting of mullite and 12 wt% of Ytterbium silicate are air plasma sprayed on the Si bondcoat on the LSI SiC fiber reinforced SiC composite substrate for protecting the composites from oxidation and water vapor reaction. We vary the process parameter of spray distance during air plasma spray of powders, 100, 120 and 140 mm. After that, we performed the thermal durability tests by thermal annealing test at $1100^{\circ}C$ for 100hr and thermal shock test from $1200^{\circ}C$ for 3000 cycles. As a result, the interface delamination of EBC never occur during thermal durability tests while stable cracks are prominent on the coating layer. The crack density and crack length depend on the spray distance during coating. The post indentation test indicates thermal tests influence on the indentation load-displacement mechanical behavior.