• 공업화학
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• 제22권3호
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• pp.308-311
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• 2011

하수슬러지 촤에 MnOx를 담지한 촉매를 사용하여 $NH_3$를 환원제로 하는 선택적 촉매 환원반응의 반응 메커니즘 분석을 수행하였다. XRD 분석 결과 활성 Mn phase는 $Mn_3O_4$인 것으로 여겨졌다. 또한 $150^{\circ}C$ 이하에서는 흡착반응이 주요한 질소산화물 저감 메커니즘으로 작동하였으나, $100{\sim}150^{\circ}C$에서는 환원반응도 질소산화물 저감에 관여하는 것으로 보여졌다. 실험결과에 기초하여 활성 촤와 여기에 MnOx를 담지한 촤에서의 반응속도상수를 비교하였다. MnOx 담지촤는 높은 충돌계수와 낮은 활성화 에너지에 기인하여 높은 반응속도 상수와 높은 NOx 제거 효율을 나타내었다. 두 가지 촤 모두 본 실험 조건하에서 활성화 에너지는 상대적으로 낮았다(10~12 kJ/mol).

• 한국세라믹학회지
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• 제27권1호
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• pp.27-34
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• 1990

Single crystals of YBa2Cu3Ox superconductor were grown by means of the flux method. The effectof starting material, cooling rate, melting time, and melting temperjature were evaluated as influencing paraemters. The larger single crystals of YBa2Cu3Ox were obtained with Y2BaCuOy powder as a starting material than with YBa2Cu3Ox powder. The optimum range of synthetic condition for single crystal growth was as follows ; 2-5$^{\circ}C$/hour of cooling rate, 2-5 hour of melting time and melting temperature at 106$0^{\circ}C$. The obtained size of single crystal was 2mm in average and the largest one was 5mm in maximum.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 추계학술대회 논문집
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• pp.386-386
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• 2009

TCO/p/i/n 구조의 비정질 실리콘 박막 태양전지의 제작에 있어서 TCO계면과 p층사이의 이종접합에서의 큰 밴드갭 차이는 p층으로부터의 정공 재결합을 통하여 효율 저하의 원인이 된다. 이러한 재결합은 넓은 밴드갭을 가진 물질을 완충층으로 삽입함으로써 개선되어 질 수 있다. 본 논문에서는 비정질 실리콘 보다 넓은 광학적 밴드갭을 가지는 a-SiOx 박막을 완충층으로 사용하여 TCO/P 계면에서의 재결합 감소에 대한 시뮬레이션을 수행하였다. a-SiOX 박막 내에 포함된 산소의 양에 따라 밴드갭을 조절하여 1.8eV~2.0eV 사이의 완충층을 삽입하여 박막태양전지의 개방전압, 단락전류, 효율 등에 끼치는 영향을 ASA 시뮬레이션을 통하여 알아보았다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.445-445
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• 2012

본 연구에서는 폴리머 애자의 자기 세정을 위한 소재로써 TiOx 박막을 실리콘, 유리, 그리고 폴리머 애자에 듀얼 RF 마그네트론 스퍼터링 장치를 이용하여 증착하였다. 타겟으로는 TiO2 타겟을 사용하였으며, 스퍼터링 가스로는 아르곤을 사용하였다. TiOx 박막은 스퍼터링의 조건 중 RF 파워의 크기에 따라 100 nm의 두께로 증착하였다. RF 파워에 따라 증착되어진 TiOx 박막은 접촉각, 표면 거칠기등을 분석하여 표면 특성을 고찰하였으며, UV-visible, 굴절율, 누설전류등을 측정하여 TiOx 박막의 광학적 특성과 전기적 특성을 평가하였으며, 구조 특성 분석을 통하여 이 특성들 사이의 관계를 규명하였다.

• 대한미생물학회지
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• 제18권1호
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• pp.67-71
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• 1983

Antisera to ox red blood cells were prepared by injection of ox red blood cell stroma without adjuvant in outbred white rabbits. Purified IgM fraction for T-cell subset assay was obtained from these rabbit anti-ox red blood cell stroma antisera by precipitation with 50% saturated ammonium sulphate followed by DEAE-Cellulose chromatography and Sephadex G-200 gel filtration. The serological identification of purified IgM fraction was achieved by immunoelectrophoresis with guinea pig antiserum against rabbit anti-ox red blood cell IgM antibody.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.301.2-301.2
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• 2016

Metal-oxide thin-film transistors (TFTs) have gained a considerable interest in transparent electronics owing to their high optical transparency and outstanding electrical performance even in an amorphous state. Also, these metal-oxide materials can be solution-processed at a low temperature by using deep ultraviolet (DUV) induced photochemical activation allowing facile integration on flexible substrates [1]. In addition, high-dielectric constant (k) inorganic gate dielectrics are also of a great interest as a key element to lower the operating voltage and as well as the formation of coherent interface with the oxide semiconductors, which may lead to a considerable improvement in the TFT performance. In this study, we investigated the electrical properties of solution-processed high-k strontium-doped AlOx (Sr-AlOx) gate dielectrics. Using the Sr-AlOx as a gate dielectric, indium-gallium-zinc oxide (IGZO) TFTs were fabricated and their electrical properties are analyzed. We demonstrate IGZO TFTs with a 10-nm-thick Sr-AlOx gate dielectric which can be operated at a low voltage (~5 V).

• 한국전기전자재료학회논문지
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• 제18권3호
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• pp.253-258
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• 2005

This paper presents characteristics of CrOx thin-film, which were deposited on $Al_2$O$_3$ wafer by DC reactive magnetron sputtering in an argon-oxide atmosphere for high temperature applications. The present paper deals with a study of the technological characteristics of thin film resistors to provide a control in obtaining temperature coefficients of resistance of given value. The optimized condition of CrOx thin-film were thickness range of 2500 $\AA$ and annealing condition(350 $^{\circ}C$, 1 hr) in oxide partial pressure(3.5${\times}$10$^{-4}$ torr). Under optimum conditions, the CrOx thin-films is obtained a high resistivity, p=340 $\mu$Ωcm, a low temperature coefficient of resistance, TCR=-55 ppm/$^{\circ}C$. The CrOx thin films resistors which were fabricated in this paper had excellent characteristics as high precision resistors.

• Transactions on Electrical and Electronic Materials
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• 제8권1호
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• pp.36-40
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• 2007

Inorganic layers, such as SiOxNy and SiOx deposited using plasma sublimation method, were tested as passivation layer for organic thin-film-transistors (OTFTs). OTFTs with bottom-gate and bottom-contact structure were fabricated using pentacene as organic semiconductor and an organic gate insulator. SiOxNy layer gave little change in characteristics of OTFTs, but SiOx layer degraded the performance of OTFTs severely. Inferior barrier properties related to its lower film density, higher water vapor transmission rate (WVTR) and damage due to process environment of oxygen of SiOx film could explain these results. Polyurea and polyvinyl acetates (PVA) were tested as organic passivation layers also. PVA showed good properties as a buffer layer to reduce the damage come from the vacuum deposition process of upper passivation layers. From these results, a multilayer structure with upper SiOxNy film and lower PVA film is expected to be a superior passivation layer for OTFTs.

• 한국마린엔지니어링학회:학술대회논문집
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• 한국마린엔지니어링학회 2002년도 춘계학술대회논문집
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• pp.13-22
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• 2002

This paper presents characteristics of CrOx thin-film Strain gauge pressure sensors, which were deposited on SUS630 diaphragm by DC reactive magnetron sputtering in an argon-Oxide atmosphere(Ar-(10%)$O_2$). The optimized condition of CrOx thin-film strain gauges were thicknessrange of 2500$\AA$ and annealing condition ($350^{\circ}C$, 3 hr) in Ar-10 %$O_2$deposition atmosphere. Under optimum conditions, the CrOx thin-films for strain gauge is obtained a high resistivity, $\rho$=156.7$\mu$$\Omega$cm, a low temperature coefficiect of resistance, TCR=-86 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal, 15. The output sensitivity of pressure sensor obtained is 2.46㎷/V and the maximum non-linearity is 0.3%FS and hysteresis is less than 0.2%FS. The output characteristics of pressure transmitter obtained is 4~20㎃ and total accuracy is less than $\pm$0.5%FS. In those conclusions, CrOx thin film pressure sensors is quite satisfactory for many applications in industrial electronics.

• 동의생리병리학회지
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• 제32권1호
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• pp.75-79
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• 2018

Animal models of atopic dermatitis (AD) are widely used to investigate therapeutic effects of candidates for AD. However, the characteristics of each model are not fully understood. This study was designed to compare the animal models of dermatitis induced by dinitrofluorobenzene (DNFB) and oxazolone (Ox). We investigated the effects of DNFB and Ox on skin thicknesses and weights as well as skin lesions associated with AD such as scale, crust and erythematous eruption, and histopathological changes such as hyperkeratosis, dermal and epidermal hyperplasia and immune cell infiltration in inflamed tissues. Multiple application of 0.5% Ox onto the skin increased skin thickness and weight compared to those of DNFB treated mice, as well as those of normal mice. In addition, topical application of DNFB induced marked scale, crust and erythematous eruption, while Ox induced erythematous eruption and mild scale and crust. Histopathological examination revealed that 0.5% Ox induced marked hyperplasia in the dermis and epidermis, large vesicles, spongiotic changes, mild hyperkeratosis and immune cell infiltration in balb/c mice. These data suggest that multiple applications of Ox can induce chronic AD like dermatitis in balb/c mice.