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Characteristics of CrOx Thin-films for High Precision Resistors

고정밀저항용 크롬산화박막의 특성

  • 서정환 (대양전기공업(주) 부설연구소) ;
  • 노상수 (대양전기공업(주) 부설연구소) ;
  • 이응안 (대양전기공업(주) 부설연구소) ;
  • 김광호 (부산대학교 재료공학부)
  • Published : 2005.03.01

Abstract

This paper presents characteristics of CrOx thin-film, which were deposited on $Al_2$O$_3$ wafer by DC reactive magnetron sputtering in an argon-oxide atmosphere for high temperature applications. The present paper deals with a study of the technological characteristics of thin film resistors to provide a control in obtaining temperature coefficients of resistance of given value. The optimized condition of CrOx thin-film were thickness range of 2500 $\AA$ and annealing condition(350 $^{\circ}C$, 1 hr) in oxide partial pressure(3.5${\times}$10$^{-4}$ torr). Under optimum conditions, the CrOx thin-films is obtained a high resistivity, p=340 $\mu$Ωcm, a low temperature coefficient of resistance, TCR=-55 ppm/$^{\circ}C$. The CrOx thin films resistors which were fabricated in this paper had excellent characteristics as high precision resistors.

Keywords

References

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