• Journal of Power Electronics
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• v.19 no.1
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• pp.11-23
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• 2019

In this study, a novel zero voltage zero current transition (ZVZCT) bidirectional DC-DC converter is proposed by employing coupled inductors. This converter can turn the main switch on at ZVZCT and it can turn it off with zero voltage switching (ZVS) for both the boost and buck modes. These characteristics are obtained by using a simple auxiliary sub-circuit regardless of the power flow direction. In the boost mode, the auxiliary switch achieves zero current switching (ZCS) turn-on and ZVS turn off. Due to the coupling inductors, this converter can make further efficiency improvements because the resonant energy in the capacitor or inductor can be transferred to the load. The main diode operates with ZVT turn-on and ZCS turn-off in the boost mode. For the buck mode, there is a releasing circuit to conduct the currents generated by the magnetic flux leakage to the output. The auxiliary switch turns on with ZCS and it turns off with ZVT. The main diode also turns on with ZVT and turns off with ZCS. The design method and operation principles of the converter are discussed. A 500 W experimental prototype has been built and verified by experimental results.

• The Transactions of the Korean Institute of Power Electronics
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• v.26 no.2
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• pp.141-149
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• 2021

In the field of electric vehicles and AGVs, wireless power transfer (WPT) charging systems have been developed recently because of its convenience, reliability, and positive environmental impact due to cable and cord elimination. In this study, we propose a WPT charging system using a single stage AC-DC converter that can be reduced in size and weight and thus can ensure convenience. The proposed single-stage AC-DC converter can control a wide output voltage (36-54 VDC) within coupling ranges by using the variable link voltage applied to the WPT resonant circuit through phase-shifted modulation at a fixed switching frequency. Moreover, the input power factor and total harmonic distortion can be improved by using the proposed converter. A 1 kW prototype that can operate with an air gap range of 40-50 mm is fabricated and validated through experimental results and analysis.

• Journal of Ocean Engineering and Technology
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• v.35 no.6
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• pp.403-413
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• 2021

As the size of ships increases, the size and output power of their thrusters also increase. When a large ship berths or unberths, the jet flow produced from its thruster has an adverse effect on the stability of quay walls. In this study, we conducted a numerical analysis to examine the impact of the thruster jet flow of a 30,000 TEU container ship, which is expected to be built in the near future, on the stability of a quay wall. In the numerical simulation, we used the fluid-structure interaction analysis technique of LS-DYNA, which is calculated by the overlapping capability using an arbitrary Lagrangian Eulerian formulation and Euler-Lagrange coupling algorithm with an explicit finite element method. As the ship approached the quay wall and the vertical position of the thruster approached the mound of the quay wall, the jet flow directly affected the foot-protection blocks and armor stones. The movement and separation of the foot-protection blocks and armor stones were confirmed in the area affected directly by the thruster jet flow of the container ship. Therefore, the thruster jet flows of ultra-large ships must be considered when planning and designing ports. In addition, the stability of existing port structures must be evaluated.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.22 no.12
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• pp.2674-2685
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• 1997

In this paper, the design and imprlementation of dual-band power amplifier which is used as a critical part for mobile phone to be simultaneously working at a dual band, 800MHz CDAM and PCS frequency band is described. DC operating point of power FET is limited to Class-B to enable long talk time considering that the tyupical power range of CDMA phones in working is around 10 to Class-B to enable long talk time considering that the typical power range of CDMA phones in working is around 10 to 15dBm, i.e., liner range. The power amplifier which employs two GaAs FETs with good linerity at a low operating point has duplexer cuplexer circuit to separate two frequency bands at input and output stage. Electromagnetic analysis for via holes and coupling between narrow transmission lines is included to design a circuit. Moduld size of 0.96CC($22{\times}14.5{\times}3mm^3$) and maximum module current of 130mA at output power range, 10 to 15dBm are attained. The power amplifer module has achieved ACPR performance with 2 to 3dB marging from IS-95 requirement at output powers, 23.5dBm for PCS and 28dBm for 800MHz CDMA respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.7
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• pp.739-747
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• 2007

Dual-mode bandpass filter was designed by using periodic stepped impedance ring resonator with step perturbation. The periodic stepped impedance ring resonator has the effects of size reduction and $2^{nd}$ harmonic suppression by changing characteristic impedance ratio. The perturbation for dual-mode generation was also easily controlled by characteristic impedance ratio, and the variation of dual-mode resonant frequencies and attenuation pole frequencies were analyzed by the effect of step perturbation. Chip capacitors were used for input/output coupling, and the variation of center frequency by the coupling capacitance and step perturbation was also considered. From the results, two types of 2 GHz dual-mode bandpass filter were fabricated in size of $14{\times}14mm^2$, those have different attenuation poles and bandwidths. The measured results of proposed bandpass filters showed a good agreement with the calculated estimations, and those have insertion loss of 2.52, 0.52 dB and 3 dB bandwidth of 4.03, 15.02 %, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.5
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• pp.486-493
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• 2010

This article introduces a novel ultra wideband(UWB) bandpass filter(BPF) with sharp roll-off characteristics in stripline structure. The UWB characteristic is basically obtained from capacitive coupled cross resonator. The resonator has ${\lambda}/2$ length. And at the center of the resonator, two stubs are loaded, one is a ${\lambda}/8$ short-circuited stub and the other is a ${\lambda}/8$ open-circuited stub. The two stubs provide two attenuation poles at lower and upper cutoff frequencies. For input and output lines, two identical capacitively coupled lines have been installed to suppress the unwanted signals in the lower and upper stopbands. The filter has been designed for the U.S. UWB band(3.1~10.6 GHz) with two transmission zeros at 2.4 and 11.1 GHz. The filter has been realized with Low Temperature Core-fired Ceramic(LTCC) green tape which has the dielectric constant of 7.8. Measurement results agree well with HFSS simulation results. Insertion loss less than 0.7 dB and return loss better than 14 dB in the pass band have been measured. The group delay in the center frequency is 0.27 ns and the group delay variation within pass band is less than 0.5 ns. The size of the filter is $6{\times}18{\times}0.6\;mm^3$.

• Korean Journal of Optics and Photonics
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• v.11 no.4
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• pp.271-278
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• 2000

We have fabricated and analyzed the lasing characteristics of 1.3$\mu\textrm{m}$ Spot-Size-Converter (SSC) integrated Fabry-Perot (FP) laser diodes, which are very promising light sources for optical subscriber networks. SSC-LDs has been developed by BIB (buttjoint-built-in) coupling and selective MOVPE growth. High-performances were achieved such as the slope efficiency from the SSC facet of 0.23-0.32 mW/mA, the full-width at the half maximum of the far-field pattern (FFP) of 9.5$^{\circ}$~12.3$^{\circ}$, the alignment tolerances of $\pm$2.3$\mu\textrm{m}$ and $\pm$2.5$\mu\textrm{m}$ within the extra-coupling loss of 1 dB for the vertical and parallel directions, respectively. These experimental results were compared to theoretical ones in order to clarify the operational problems and give a good design direction of the fabricated SSC-LDs. It was revealed that an asymmetric output power from the facets, an irrelevancy of FFP and the waveguide structure around SSC facet region, and a poor temperature characteristics were originated from the scattering in the BIB and SSC sections and SHB effect in the active section for the first time.t time.

• Journal of the Korean Magnetics Society
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• v.7 no.3
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• pp.152-158
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• 1997

NiFeCo/ Cu /Co trilayers were formed on 4$^{\circ}$ tilt-cut Si(111) substrates with a Cu(50$\AA$) underlayer and large-scaled test magnetoresistive RAM (MRAM) cells were fabricated using a conventional lithographic process. NiFeCo / Cu /Co trilayers deposited on the same templates without any applied magnetic field showed strong in plane uniaxial magnetic anisotropy and excellent magnetoresistive (MR) properties such as high MR ration and sensitivity within a low external magnetic field, which are suitable properties for a MRAM application. In order to obtain optimized MR results in NiFeCo /Cu /Co trilayers, the thickness of Cu spacer was varied. Interlayer coupling between two magnetic layers was observed and it was found that the MR properties were strongly dependent on the coupling force, especially near 20 $\AA$ of Cu spacer thickness. Test MRAM cells were fabricated using the optimized NiFeCo (60$\AA$)/ Cu (25$\AA$)/ Co (30$\AA$) trilayer thin films. With a 10 mA of sense current and 5$\times$$10^5$ of word current, 10 mV of signal output was obtained, which implies the strong potentials of NiFeCo/ Cu /Co trilayer thin films for a MRAM application.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.8 no.1
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• pp.13-21
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• 1997

In this paper, the oscillator type active antenna used as an element of active phased array antenna is designed and fabricated using slot coupling. The radiating element and active circuit are fabricated on each layer respectively and coupled electromagnetically through slot on the ground plane. This structure can solve the problems such as narrow bandwidth of microstrip antenna, spurious radiation by active circuits, and spaces for integration of the feeding circuits which are caused by integrating antennas with oscillator circuits in the same layer. The active antenna in this paper, the oscillation frequency can be tuned linearly by controlling the drain bias voltage of FET. The frequency tuning range is between 12.37 GHz to 12.65 GHz when bias voltage is varied from 3V to 9V, thus frequency tuning bandwidth is 280 MHz (2.24%). The output power of antenna is uniform within 5dB over frequency tuning range. Therefore this active antenna can be used as an element of linear or planar active phased array antennas.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.9
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• pp.535-540
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• 2017

The changes in the electrical characteristics of CMOS ICs due to coupling with a narrow-band electromagnetic wave were analyzed in this study. A magnetron (3 kW, 2.45 GHz) was used as the narrow-band electromagnetic source. The DUT was a CMOS logic IC and the gate output was in the ON state. The malfunction of the ICs was confirmed by monitoring the variation of the gate output voltage. It was observed that malfunction (self-reset) and destruction of the ICs occurred as the electric field increased. To confirm the variation of electrical characteristics of the ICs due to the narrow-band electromagnetic wave, the pin-to-pin resistances (Vcc-GND, Vcc-Input1, Input1-GND) and input capacitance of the ICs were measured. The pin-to-pin resistances and input capacitance of the ICs before exposure to the narrow-band electromagnetic waves were $8.57M{\Omega}$ (Vcc-GND), $14.14M{\Omega}$ (Vcc-Input1), $18.24M{\Omega}$ (Input1-GND), and 5 pF (input capacitance). The ICs exposed to narrow-band electromagnetic waves showed mostly similar values, but some error values were observed, such as $2.5{\Omega}$, $50M{\Omega}$, or 71 pF. This is attributed to the breakdown of the pn junction when latch-up in CMOS occurred. In order to confirm surface damage of the ICs, the epoxy molding compound was removed and then studied with an optical microscope. In general, there was severe deterioration in the PCB trace. It is considered that the current density of the trace increased due to the electromagnetic wave, resulting in the deterioration of the trace. The results of this study can be applied as basic data for the analysis of the effect of narrow-band high-power electromagnetic waves on ICs.