• The Bulletin of The Korean Astronomical Society
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• v.41 no.1
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• pp.68.2-68.2
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• 2016

We present the variability and time lag measurements of PG 0934+013 based on the photometric and spectroscopic monitoring campaign over two years. We obtained 46 epochs of data from the spectroscopic campaign, which was carried out using the South African Large Telescope with 1 week cadence over two sets of 4 month-long observing period, while we obtained 80 epochs of B band data from the campaign. Due to the six month gap between two campaigns, we separately measured the time lag of the $H{\beta}$ emission line by comparing the emission line light curve with the B band continuum light curve using the cross-correlation function techniques. We determined the time lags and black hole mass.

• The Bulletin of The Korean Astronomical Society
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• v.46 no.1
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• pp.54.4-55
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• 2021

The Seoul National University AGN Monitoring Project (SAMP) is a welldesigned long-term AGN reverberation mapping project. SAMP focuses on the luminous AGNs out to z~0.5 with relative long time lags between AGN continuum and broad emission lines and aims to probe the high-end of the AGN broad line region (BLR) size-luminosity (R-L) relation. The pilot observations started in October 2015 for 100 AGNs to confirm the variability and the H and [O III] emission line strengths. Based on the initial variability test, 48 quasars has been continued spectroscopic monitoring since Feb. 2016 with Lick 3m and MDM 2.4m telescopes with a cadence of ~20 days. Supporting photometric monitoring in B and V band was conducted at multiple facilities including the MDM 1.3m, LOAO, and DOAO telescopes with a cadence of ~10 days. By the time of Feb. 2021, we have obtained five years spectroscopic and photometric data. More than 30 AGNs shows significant variability in five-year baseline and 16 of them show well detected lags between B-band and H. Here, we report some examples of SAMP light curves and lag detections using the first five-year data as well as the location of our 16 targets in the AGN BLR R-L relation. These measurements are consistent with the existing R-L relation and located at the high-end. With the coming data, SAMP are hopefully to report more AGNs with well detected lags. Our results demonstrate the general feasibility and potential of long-term reverberation project with medium cadence for luminous AGNs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.841-846
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• 2016

ZnO nanorods were grown on $SiO_2$ coated Si wafers and glass by the hydrothermal method. The structural and optical properties variation of ZnO nanorods as a function of growing time was studied. ~10 nm-thick ZnO thin films deposited on substrates by rf magnetron sputtering were employed as seed layers. Zinc nitrate hexahydrate (0.05 M) and hexamethylenetetramine (0.05 M) mixed in DI water were used as a reaction solution. ZnO nanorods were respectively grown for 30 min, 1 h, 2 h, 3 h, and 4 h by maintaining the reactor at $90^{\circ}C$. Crystallinity of ZnO nanorods was analyzed by X-ray diffraction, and the morphology of nanorods was observed by a field emission scanning electron microscope. Transmittance and absorbance were measured by a UV-Vis spectrophotometer, and energy band gap and urbach energy were obtained from the data. Photoluminescence measurements were carried out using Nd-Yag laser (266 nm).

• Advances in nano research
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• v.3 no.1
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• pp.13-27
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• 2015

Size dependent emission properties and the interband optical transition energies in group-III nitride based quantum dots are investigated taking into account the geometrical confinement. Exciton binding energy and the optical transition energy in $Ga_{0.9}In_{0.1}N$/GaN and $Al_{0.395}In_{0.605}N$/AlN quantum dots are studied. The largest intersubband transition energies of electron and heavy hole with the consideration of geometrical confinement are brought out. The interband optical transition energies in the quantum dots are studied. The exciton oscillator strength as a function of dot radius in the quantum dots is computed. The interband optical absorption coefficients in GaInN/GaN and AlInN/AlN quantum dots, for the constant radius, are investigated. The result shows that the largest intersubband energy of 41% (10%) enhancement has been observed when the size of the dot radius is reduced from $50{\AA}$ to $25{\AA}$ of $Ga_{0.9}In_{0.1}N$/GaN ($Al_{0.395}In_{0.605}N$/AlN) quantum dot.

• Journal of the Korean Society for Nondestructive Testing
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• v.31 no.2
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• pp.165-173
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• 2011

The acoustic emission(AE) technique is a well established method to carry out structural health monitoring(SHM) of large structures. However, the real-time monitoring of the crack growth in the roller coaster support structures is not easy since the vehicle operation produces very large noise as well as crack growth. In this investigation, we present the waveform parameter filtering method to classify acoustic sources in real-time. This method filtrates only the AE hits by the target acoustic source as passing hits in a specific parameter band. According to various acoustic sources, the waveform parameters were measured and analyzed to verify the present filtering method. Also, the AE system employing the waveform parameter filter was manufactured and applied to the roller coaster support structure in an actual amusement park.

• Korean Journal of Materials Research
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• v.8 no.6
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• pp.526-531
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• 1998

A hydride vapor phase epitaxy (HVPE) method was performed to grow the $10~240\mu{m}$ thick GaN films on (111) spinel $MgAl_2O_4$ substrate. The GaN films on $MgAl_2O_4$ substrate revealed a photoluminescence (PL) characteristics of the impurity doped GaN by the out-diffusion and auto-doping of Mg from $MgAl_2O_4$ substrate during GaN growth. The PL spectrum measured at 10K consists of free and bound excitons related recombination transitions and impurity-related donor-acceptor pair recombination and its phonon replicas. However, the deep-level related yellow band emission was not observed. The peak energy of neutral donor bound excitonic emission and the frequency of Raman $E_2$ mode were exponentially decreased with increasing the GaN thicknesses. and the frequency of E, Raman mode was shifted with the relation of $\Delta$$\omega$=3.93$\sigma$($cm^{-1}$/GPa), where l1 (GPa) is the residual strain in the GaN epilayers.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.38B no.10
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• pp.851-860
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• 2013

To overcome a scarcity of radio resources to mobile broadband service, the usage of TV white space gains much attraction around the world. This paper carries out an interference analysis either by performing realistic experiments or by executing statistical Monte-Carlo simulation to exploit interference probability. The results obtained from experiments are compared to those from simulations in order to clarify the coexistence of utilization of TV band devices (TVBD) in indoor circumstances. Along the execution of our experiment in the presence of DTV receiver, we apply to a variety of transmission parameters proposed in FCC for TVBD. According to experimental and simulation works, the allowable transmission powers of TVBD systems are exploited for the plausible which are coexist on the first as well as the second adjacent frequency bands. Throughout results, it can conclude that TVBD systems can be coexisted via achieving proper transmission powers depending on the locations of themselves without showing harmful interference to DTV reception.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.658-658
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• 2013

Graphene is an attractive material for various device applications due to great electrical properties and chemical properties. However, lack of band gap is significant hurdle of graphene for future electrical device applications. In the past few years, several methods have been attempted to open and tune a band gap of graphene. For example, researchers try to fabricate graphene nanoribbon (GNR) using various templates or unzip the carbon nanotubes itself. However, these methods generate small driving currents or transconductances because of the large amount of scattering source at edge of GNRs. At 2009, Bai et al. introduced graphene nanomesh (GNM) structures which can open the band gap of large area graphene at room temperature with high current. However, this method is complex and only small area is possible. For practical applications, it needs more simple and large scale process. Herein, we introduce a photosensitive graphene device fabrication using CdSe QD coated nano-porous graphene (NPG). In our experiment, NPG was fabricated by thin film anodic aluminum oxide (AAO) film as an etching mask. First of all, we transfer the AAO on the graphene. And then, we etch the graphene using O2 reactive ion etching (RIE). Finally, we fabricate graphene device thorough photolithography process. We can control the length of NPG neckwidth from AAO pore widening time and RIE etching time. And we can increase size of NPG as large as 2 $cm^2$. Thin CdSe QD layer was deposited by spin coatingprocess. We carried out NPG structure by using field emission scanning electron microscopy (FE-SEM). And device measurements were done by Keithley 4200 SCS with 532 nm laser beam (5 mW) irradiation.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.184-184
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• 2012

Recently, InGaN/GaN multi-quantum well grown on GaN pyramid structures have attracted much attention due to their hybrid characteristics of quantum well, quantum wire, and quantum dot. This gives us broad band emission which will be useful for phosphor-free white light emitting diode. On the other hand, by using quantum dot emission on top of the pyramid, site selective single photon source could be realized. However, these structures still have several limitations for the single photon source. For instance, the quantum efficiency of quantum dot emission should be improved further. As detection systems have limited numerical aperture, collection efficiency is also important issue. It has been known that micro-cavities can be utilized to modify the radiative decay rate and to control the radiation pattern of quantum dot. Researchers have also been interested in nano-cavities using localized surface plasmon. Although the plasmonic cavities have small quality factor due to high loss of metal, it could have small mode volume because plasmonic wavelength is much smaller than the wavelength in the dielectric cavities. In this work, we used localized surface plasmon to improve efficiency of InGaN qunatum dot as a single photon emitter. We could easily get the localized surface plasmon mode after deposit the metal thin film because lnGaN/GaN multi quantum well has the pyramidal geometry. With numerical simulation (i.e., Finite Difference Time Domain method), we observed highly enhanced decay rate and modified radiation pattern. To confirm these localized surface plasmon effect experimentally, we deposited metal thin films on InGaN/GaN pyramid structures using e-beam deposition. Then, photoluminescence and time-resolved photoluminescence were carried out to measure the improvement of radiative decay rate (Purcell factor). By carrying out cathodoluminescence (CL) experiments, spatial-resolved CL images could also be obtained. As we mentioned before, collection efficiency is also important issue to make an efficient single photon emitter. To confirm the radiation pattern of quantum dot, Fourier optics system was used to capture the angular property of emission. We believe that highly focused localized surface plasmon around site-selective InGaN quantum dot could be a feasible single photon emitter.

• Bulletin of the Korean Chemical Society
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• v.25 no.5
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• pp.652-656
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• 2004

A new luminescent polymer, poly{1,4-phenylene-1,2-ethenediyl-2'-[2"-(4'"-octyloxyphenyl)-(5"-yl)-1",3",4"-oxadiazole]-1,4-phenylene-1,2-ethenediyl-2,5-bis-dodecyloxy-1,4-phenylene-1,2-ethenediyl} (Oxd-PPV), was synthesized by the Heck coupling reaction. Electron withdrawing pendant, conjugated 1,3,4-oxadiazole (Oxd), is on the vinylene unit. The band gap of the polymer figured out from the UV-visible spectrum was 2.23 eV and the polymer film shows bright yellow emission maximum at 552 nm. The electroluminescence (EL) maximum of double layer structured device (ITO/PEDOT:PSS/Oxd-PPV/Al) appeared at 553 nm. Relative PL quantum yield of Oxd-PPV film is 3.6 times higher than that of MEH-PPV film. The HOMO and LUMO energy levels of Oxd-PPV figured out from the cyclic voltammogram and the UV-visible spectrum are -5.32 and -3.09 eV, respectively, so that more balanced hole and electron injection efficiency can be expected compared to MEH-PPV. A double layer EL of Oxd-PPV has an maximum efficiency of 0.15 cd/A and maximum brightness of 464 cd/$m^2$.