• Journal of Semiconductor Engineering
• /
• v.1 no.1
• /
• pp.38-45
• /
• 2020

With the recent emergence of foldable electronic devices, interest in flexible organic memory is significantly growing. There are three types of flexible organic memory that have been researched so far: floating-gate (FG) memory, ferroelectric field-effect-transistor (FeFET) memory, and resistive memory. Herein, performance parameters and operation mechanisms of each type of memory device are introduced, along with a brief summarization of recent research progress in flexible organic memory.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.31-32
• /
• 2010

In our previous reports [1-3], electron transport for the switching and memory devices using alkyl thiol-tethered Ru-terpyridine complex compounds with metal-insulator-metal crossbar structure has been presented. On the other hand, among organic memory devices, a memory based on the OFET is attractive because of its nondestructive readout and single transistor applications. Several attempts at nonvolatile organic memories involve electrets, which are chargeable dielectrics. However, these devices still do not sufficiently satisfy the criteria demanded in order to compete with other types of memory devices, and the electrets are generally limited to polymer materials. Until now, there is no report on nonvolatile organic electrets using nano-interfaced organic monomer layer as a dielectric material even though the use of organic monomer materials become important for the development of molecularly interfaced memory and logic elements. Furthermore, to increase a retention time for the nonvolatile organic memory device as well as to understand an intrinsic memory property, a molecular design of the organic materials is also getting important issue. In this presentation, we report on the OFET memory device built on a silicon wafer and based on films of pentacene and a SiO2 gate insulator that are separated by organic molecules which act as a gate dielectric. We proposed push-pull organic molecules (PPOM) containing triarylamine asan electron donating group (EDG), thiophene as a spacer, and malononitrile as an electron withdrawing group (EWG). The PPOM were designed to control charge transport by differences of the dihedral angles induced by a steric hindrance effect of side chainswithin the molecules. Therefore, we expect that these PPOM with potential energy barrier can save the charges which are transported to the nano-interface between the semiconductor and organic molecules used as the dielectrics. Finally, we also expect that the charges can be contributed to the memory capacity of the memory OFET device.[4]

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2006.11a
• /
• pp.13.2-13.2
• /
• 2006

• ETRI Journal
• /
• v.35 no.4
• /
• pp.594-602
• /
• 2013

This paper proposes printed organic one-time programmable read-only memory (PROM). The organic PROM cell consists of a capacitor and an organic p-type metal-oxide semiconductor (PMOS) transistor. Initially, all organic PROM cells with unbroken capacitors store "0." Some organic PROM cells are programmed to "1" by electrically breaking each capacitor with a high voltage. After the capacitor breaking, the current flowing through the PROM cell significantly increases. The memory data is read out by sensing the current in the PROM cell. 16-bit organic PROM cell arrays are fabricated with the printed organic PMOS transistor and capacitor process. The organic PROM cells are programmed with -50 V, and they are read out with -20 V. The area of the 16-bit organic PROM array is 70.6 $mm^2$.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.15 no.8
• /
• pp.5213-5218
• /
• 2014

Organic memory devices were made using the plasma polymerization method. The memory device consisted of ppMMA(plasma polymerization MMA) thin films as the tunneling and insulating layer, and a Au thin film as the memory layer, which was deposited by thermal evaporation. The organic memory operation theory was developed according to the charging and discharging characteristics of floating gate type memory, which would be measured by the hysteresis voltage and memory voltage with the gate voltage values. The I-V characteristics of the fabricated memory device showed a hysteresis voltage of 26 [V] at 60 ~ -60 [V] double sweep measuring conditions. The programming voltage was applied to the gate electrode in accordance with the result of this theory. A programming voltage of 60[V] equated to a memory voltage of 13[V], and 80[V] equated to a memory voltage of 18[V]. The memory voltage of approximately 40 [%]increased with increasing programming voltage. The charge memory layer charging or discharging according to the theory of the memory was verified experimentally.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.8 no.1
• /
• pp.40-45
• /
• 2008

We developed small molecular organic nonvolatile $4F^2$ memory cells using metal layer evaporation followed by $O_2$ plasma oxidation. Our memory cells sandwich an upper ${\alpha}$-NPD layer, Al nanocrystals surrounded by $Al_2O_3$, and a bottom ${\alpha}$-NPD layer between top and bottom electrodes. Their nonvolatile memory characteristics are excellent: the $V_{th},\;V_p$ (program), $V_e$ (erase), memory margin ($I_{on}/I_{off}$), data retention time, and erase and program endurance were 2.6 V, 5.3 V, 8.5 V, ${\approx}1.5{\times}10^2,\;1{\times}10^5s$, and $1{\times}10^3$ cycles, respectively. They also demonstrated symmetrical current versus voltage characteristics and a reversible erase and program process, indicating potential for terabit-level nonvolatile memory.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.904-906
• /
• 2009

Organic field-effect transistor (OFET) memory is an emerging device for its potential to realize light-weight, low cost flexible charge storage media. Here we report on a solution-processed poly[9,9-dioctylfluorenyl-2,7-diyl]-co-(bithiophene)] (F8T2) nano floating-gate memory (NFGM) with top-gate/bottom-contact device configuration. A reversible shift in the threshold voltage ($V_{Th}$) and the reliable memory characteristics were achieved by incorporation of thin Au nanoparticles (NPs) as charge storage sites for negative electrons at the interface between polystyrene and cross-linked poly(4-vinylphenol).

• Applied Chemistry for Engineering
• /
• v.23 no.6
• /
• pp.515-520
• /
• 2012

In this review, the fabrication of silicon based memory capacitor and organic memory thin film transistors (TFTs) was discussed for their potential identification tag applications and biosensor applications. Metal or non-metal nanoparticles (NPs) could be capped with chemicals or biomolecules such as protein and oligo-DNA, and also be self-assembly monolayered on corresponding target biomolecules conjugated dielectric layers. The monolayered NPs were formed to be charging elements of a nano floating gate layer as forming organic memody deivces. In particular, the strong and selective binding events of the NPs through biomolecular interactions exhibited effective electrostatic phenomena in memory capacitors and TFTs formats. In addition, memory devices fabricated as organic thin film transistors (OTFTs) have been intensively introduced to facilitate organic electronics era on flexible substrates. The memory OTFTs could be applicable eventually to the development of new conceptual devices.

• Transactions on Electrical and Electronic Materials
• /
• v.6 no.4
• /
• pp.154-158
• /
• 2005

Organic molecules have many properties that make them attractive for electronic applications. We have been examining the progress of memory cell by using molecular-scale switch to give an example of the application using both nano scale components and Si-technology. In this study, molecular electronic devices were fabricated with amino style derivatives as redox-active component. This molecule is amphiphilic to allow monolayer formation by the Langmuir-Blodgett (LB) method and then this LB monolayer is inserted between two metal electrodes. According to the current-voltage (I-V) characteristics, it was found that the devices show remarkable hysteresis behavior and can be used as memory devices at ambient conditions, when aluminum oxide layer was existed on bottom electrode. The diode-like characteristics were measured only, when Pt layer was existed as bottom electrode. It was also found that this metal layer interacts with organic molecules and acts as a protecting layer, when thin Ti layer was inserted between the organic molecular layer and Al top electrode. These electrical properties of the devices may be applicable to active components for the memory and/or logic gates in the future.

• Proceedings of the IEEK Conference
• /
• 2006.06a
• /
• pp.483-484
• /
• 2006

In this paper, we fabricated the organic bi-stable devices under the different condition from the other groups and analyzed the electrical characteristics. Then we investigated the effects of the device structure such as organic layer thickness, middle metal layer thickness and middle metal layer deposition rate on the memory characteristics.