• 한국진공학회지
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• 제21권1호
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• pp.12-16
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• 2012

Top-Emitting OLED (Organic Light-Emitting Diode) 디스플레이에서는 반사율이 가장 높은 Ag (silver) 박막이 쓰이고 있지만, 소자에서 요구되는 일함수(work function)가 상대적으로 낮기 때문에 전극과 유기물간에 에너지 장벽이 발생하여 발광효율을 낮추는 요인이 되고 있다. 본 논문에서는 Ag 전극의 일함수를 높이기 위한 연구를 진행하였으며, 박막 형태의 Ag 전극에 대하여 nanotribology 접근법으로 연구를 실행하였다. Ag는 rf magnetron sputter를 이용해 glass 위에 증착한 후 furnace에서 $300^{\circ}C$, 30분간 대기 중에서 열처리하였고, 또 다른 시료는 표면에 산소 상압플라즈마로 처리 시간(30, 60, 90, 120s)을 각기 다르게 하여 시료를 제조하였다. Ag 전극을 nanoindentation을 통해 국부 영역에 대한 물리적 특성의 변화를 측정하였고, Kelvin probe force microscopy을 이용해 시료 표면의 포텐셜을 측정했다. 그 결과 열처리한 시료의 포텐셜값은 가장 크게 증가하였지만 균일도가 낮아졌다. 120s 플라즈마 처리한 시료는 불완전한 산화막의 생성으로 인해 탄성계수 및 경도값과 박막의 Weibull modulus를 극히 낮게 만들었지만, 60s, 90s 플라즈마 처리는 시료의 균일도를 높이고 또한 포텐셜을 증가시켜 T-OLED 성능 개선에 좋은 영향을 미치게 될 것이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.309-310
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• 2005

In the fabrication of high performance red organic light emitting diode, 2-TNA TA [4,4',4" -tris (2-naphthylphenyl- phenylamino)-triphenylamine] as hole injection material and N PH [N,N'-bis (1-naphthyl) -N,N' -diphenyl-1, 1'-biphenyl-4,4'- diamine] as hole transport material were deposited on the ITO (indium tin oxide)/glass substrate by vacuum evaporation, And then, red color emission layer was deposited using Alq3 as a host material and Rubrene (5,6,11,12- tetraphenylnaphthacene) and GDI 4234 as dopants. Finally, small molecular weight OLED with the structure of ITO/2-TNATA/ NPB/Alq3+Rubrene+GDI4234/Alq3/LiF/Al was obtained by in-situ deposition of Alq3, LiF and Al as electron transport material, electron injection material and cathode. respectively. Green OLED fabricated in our experiments showed the color coordinate of CIE(0.65,0.35) and the maximum luminescence efficiency of 2.1 lm/W at 7 V with the peak emission wavelength of 632 nm.

• 한국응용과학기술학회지
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• 제21권1호
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• pp.24-30
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• 2004

New electroluminescent materials based on anthracene chromophore with naphthylethenyl substituent, 9,10-bis($\alpha$-naphthylethenyl)anthracene (a-BNA), as well as four kinds of its derivatives were synthesized, and luminescent properties of these materials were investigated. Electrolumineecent(EL) emission band was discussed based on their substituent structure differences. It was found that the emission band strongly depends on the molecular structure of introduced substituent. It can be tuned from 557 nm to 591 nm by changing the substituent structures. On the other hand, the anthracene chromophore with bulky substituent possessed high melting point and they gave stable films through vacuum-sublimation. The double layer EL device of ITO/TPD/emission layer/Mg:Ag was employed, and exhibited efficient orange light originating from emitting materials. EL emission with a maximum luminance was observed in the b-BNA emitting material, : maximum luminance was about 8,060 cd $m^{-2}$ at an applied voltage of 10 V and current density of 680 $mA/cm^2$. In conclusion, the electroluminescent properties also showed good difference with their substituent structure.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.11-11
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• 2008

ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

• 반도체디스플레이기술학회지
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• 제15권1호
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• pp.65-69
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• 2016

We have investigated the possibility of recycling of an organic material that is wasted during thermal evaporation. To this end, we have collected a wasted organic material (N,N'-diphenly-N,N'-bis(1,1'-biphenyl)-4,4'-diamine(NPB)) from a vacuum chamber, purified it by recrystallization, and fabricated bilayer organic light-emitting diodes (OLEDs) with the recycled NPB. It is found that the surface roughness of thin films coated with the purified NPB is much enhanced. OLEDs fabricated by thermal evaporation of the purified NPB show lower device efficiency than OLEDs with the original NPB. However, the power efficiency of OLED fabricated by spin coating of the purified NPB is comparable with that of OLED with the original NPB. Therefore, such a recycling method by recrystallization would be more suitable for solution-processed OLEDs.

• 한국전기전자재료학회논문지
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• 제16권4호
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• pp.292-297
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• 2003

We fabricated a single crystal silicon thin film transistor for active matrix organic light emitting displays(AMOLEDs) using silicon on insulator wafer (SOI wafer). Poly crystal silicon thin film transistor(poly-Si TFT) Is actively researched and developed nowsdays for a pixel switching devices of AMOLEDs. However, poly-Si TFT has some disadvantages such as high off-state leakage currents and low field-effect mobility due to a trap of grain boundary in active channel. While single crystal silicon TFT has many advantages such as high field effect mobility, low off-state leakage currents, low power consumption because of the low threshold voltage and simultaneous integration of driving ICs on a substrate. In our experiment, we compared the property of poly-Si TFT with that of SOI TFT. Poly-Si TFT exhibited a field effect mobility of 34 $\textrm{cm}^2$/Vs, an off-state leakage current of about l${\times}$10$\^$-9/ A at the gate voltage of 10 V, a subthreshold slope of 0.5 V/dec and on/off ratio of 10$\^$-4/, a threshold voltage of 7.8 V. Otherwise, single crystal silicon TFT on SOI wafer exhibited a field effect mobility of 750 $\textrm{cm}^2$/Vs, an off-state leakage current of about 1${\times}$10$\^$-10/ A at the gate voltage of 10 V, a subthreshold slope of 0.59 V/dec and on/off ratio of 10$\^$7/, a threshold voltage of 6.75 V. So, we observed that the properties of single crystal silicon TFT using SOI wafer are better than those of Poly Si TFT. For the pixel driver in AMOLEDs, the best suitable pixel driver is single crystal silicon TFT using SOI wafer.

• Transactions on Electrical and Electronic Materials
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• 제10권2호
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• pp.40-43
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• 2009

The authors fabricated a nanopatterned surface on a GaN thin film deposited on a sapphire substrate and used that as an epitaxial wafer on which to grow an InGaN/GaN multi-quantum well structure with metal-organic chemical vapor deposition. The deposited GaN epitaxial surface has a two-dimensional photonic crystal structure with a hexagonal lattice of 230 nm. The grown structure on the nano-surface shows a Raman shift of the transverse optical phonon mode to $569.5\;cm^{-1}$, which implies a compressive stress of 0.5 GPa. However, the regrown thin film without the nano-surface shows a free standing mode of $567.6\;cm^{-1}$, implying no stress. The nanohole surface better preserves the strain energy for pseudo-morphic crystal growth than does a flat plane.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제36회 동계학술대회 초록집
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• pp.252-252
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• 2009

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1018-1023
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• 2006

The metal chelate complex of aluminum 8-hydroxyquinolines $(Alq_3)$ is an important electro-luminescent (EL) material used in fabricating organic light emitting (OLEDs). In this work, diodes / displays using in house synthesized $Alq_3$ and simple structure have been fabricated. It is demonstrated that luminance of $12460\;cd/m^2$ and efficiency of 3.1 cd/A are achievable in these fluorescent devices. Possible degradation effects are analyzed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.898-901
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• 2005

We propose a novel pixel structure using bootstrapped voltage programming for amorphoussilicon TFT backplane of AM-OLED (Active Matrix-Organic Light Emitting Diode) displays. The proposed structure is composed of two TFTs and one capacitor. It operates at low drive voltage ($0{\sim}5V$) which can reduce power consumption comparing with the conventional pixel circuit structure using same OLED material. Also, it can easily control dark level and use commercial mobile LCD ICs. In this paper, we describe the operating principle and the characteristics of the proposed pixel structure and verify the performance by SPICE simulation comparing with the conventional pixel structure.