• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.816-825
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• 2003

Current-voltage-luminance characteristics of organic light-emitting diodes (OLEDs) were measured in the temperature range of 10 K～300 K. Indium-tin-oxide (ITO) was used as an anode and aluminum as a cathode in the device. Organic of N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) was used for a hole transporting material, and tris (8-hydroxyquinolinato) aluminum (Alq$_3$) for an electron transporting material and emissive material. And copper phthalocyanine (CuPc), poly(3,4-ethylenedi oxythiophene);poly(styrenesulfonate) (PEDOT:PSS), and poly(N-vinylcarbazole) (PVK) were used for hole-injection buffer layers. From tile analysis of electroluminescence (EL) and photoluminesccnce (PL) spectra of the Alq$_3$, the EL spectrum is more greenish then that of PL. And the temperature-dependent current-voltage characteristics were analyzed in the double and multilayer structure of OLEDS. Electrical conduction mechanism was explained in the region of high-electric and low-electric field. Temperature-dependent luminous efficiency and operating voltage were analyzed from the current-voltage- luminance characteristics of the OLEDS.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.11
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• pp.1183-1189
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• 2012

Organic light-emitting diodes (OLEDs) using microcavity effect have attracted great attention because they can reduce the width of emission spectra from organic materials, and enhance brightness from the same material. We demonstrate the simulation results of the radiation properties from top-emitting organic light-emitting diodes (TE-OLEDs) with microcavity structures based on the general electromagnetic theory. Organic materials such as N,N'-di (naphthalene-1-yl)-N,N'-diphenylbenzidine (NPB) as a hole transport layer and tris (8-hydroxyquinoline) ($Alq_3$) as emitting and electron transporting layer are used to form the OLEDs. The organic materials were sandwiched between anode such as Ni or Au and cathode such as Al, Ag, or Al:Ag. The devices were characterized with electroluminescence phenomenon. We confirmed that the simulation results are consistent with experimental results.

• Journal of the Semiconductor & Display Technology
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• v.21 no.1
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• pp.91-94
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• 2022

Top emission organic light-emitting diode is commonly used because of high efficiency and good color purity than bottom - emission organic light-emitting device. Unlike BEOLED, TEOLED contain semi-transparent metal cathode. Because of semi-transparent cathode, micro cavity effect occurs in TEOLED. We optimized this effect by changing the thickness of hole injection layer. Device consists of is indium-tin-oxide / N,N'-Di-[(1-naphthyl)-N,N'-diphenyl]-1,1'-biphenyl-4,4'-diamine (x nm) / tris-(8-hydroxyquinoline) aluminum (50nm) / LiF(0.5nm) / Mg:Ag (1:9), and we changed NPB thickness which is used as HTL in our device in order to study how micro cavity effects are changed by optical path. As the results, NPB thickness at 35nm showed the current efficiency of 8.55Cd/A.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.53-56
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• 2002

The effect of $\alpha$-septithiophene (${\alpha}-7T$) layers on the organic light emitting diode(OLED) was studied. The ${\alpha}-7T$ was used for a buffer layer in OLED. Hole injection was investigated and improved emission efficiency. The OLEDs structure can be described as indium tin oxide(ITO)/ buffer layer / hole transporting layer / emitting layer / electron transporting layer / LiF / Al. The hole transporting layer were composed of N,N-diphenyl-N,N-di(3-methylphenyl)-1,1-biphenyl-4,4-diamine(TPD), and N,N-di(naphthalene-1-ly)-N,N-diphenyl-benzidine( ${\alpha}$-NPD). The emitting layer, and electron transporting layer consist of tris(8-hydroxyquinolinato) aluminum($Alq_3$). All organic layer were deposited at a background pressure of less than $10^{-6}$ torr using ultra high vacuum (UHV) system. The ${\alpha}-7T$ layer can substitute the hole blocking layer, and improve hole injection properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.174-177
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• 2001

We have seen the effects of buffer layer in organic light-emitting diodes using poly(N-vinylcarbazole)(PVK). Polymer PVK buffer layer was made using spin casting techniques. Two different types of spin casting have been applied; static coating and dynamic coating. Two device structures were fabricated; one is ITO/TPD/Alq$_3$/Al as a reference, and the other is ITO/PVK/TPD/Alq$_3$/Al to see the effects of buffer layer in organic light-emitting diodes. Current-voltage characteristics and luminous efficiency were measured with a variation of spin-casting methods and rpm speeds. We have obtained an improvement of luminous efficiency by a factor of two and half when the PVK buffer layer is used.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.7
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• pp.446-449
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• 2015

An improvement of light-extraction efficiency of organic light-emitting diodes was studied by using random-textured films (RTF). Device was made in a structure of RTF/glass/ITO/TPD/$Alq_3$/LiF/Al. RTF mold was made by spreading PDMS solution on a sandpaper. By pressing this mold on the glass substrate pre-coated with ZPU material, the RTF was obtained. From this study, there was an improvement of external quantum efficiency by about 30% in the device with the random-textured film (RTF 40) compared to that of the reference one.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.538-546
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• 2006

We report on characteristics of specially designed inductively-coupled-plasma chemical vapor deposition (ICP-CVD) system for top-emitting organic light emitting diodes (TOLEDs). Using high-density plasma on the order of $10^{11}$ electrons/$cm^3$ generated by linear-type antennas connected in parallel and specially designed substrate cooling system, a 100 nm-thick transparent $SiN_{x}$ passivation layer was deposited on thin Mg-Ag cathode layer at substrate temperature below $50\;^{\circ}C$ without a noticeable plasma damage. In addition, substrate-mask chucking system equipped with a mechanical mask aligner enabled us to pattern the $SiN_x$ passivation layer without conventional lithography processes. Even at low substrate temperature, a $SiN_x$ passivation layer prepared by ICP-CVD shows a good moisture resistance and transparency of $5{\times}10^{-3}g/m^2/day$ and 92 %, respectively. This indicates that the ICP-CVD system is a promising methode to substitute conventional plasma enhanced CVD (PECVD) in thin film passivation process.

• Transactions on Electrical and Electronic Materials
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• v.12 no.2
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• pp.84-87
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• 2011

We fabricated phosphorescent organic light-emitting devices with a 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) host layer. Two kinds of devices, one of ITO/TAPC/TAPC:FIrpic/TAZ/LiF/Al (device A) and one of ITO/TAPC:FIrpic/TAPC/TAZ/LiF/Al (device B), were prepared to investigate electrical and optical properties. Iridium(III) bis[(4,6-difluorophenyl)-pyridinato-N,$C^{2'}$]picolinate (FIrpic) and 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (TAZ) were used as a blue phosphorescent guest material and an electron transport layer, respectively. The TAPC layer in device B strongly contributes to whitish emission, higher driving voltage, and lower current efficiency characteristics compared with device A. The mechanisms of these electrical and optical characteristics of the devices were investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.198-201
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• 2002

We have studied the temperature dependence of current-voltage and luminance-voltage characteristics of Organic Light Emitting Diodes(OLEDs). The OLEDS are based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) as a hole transport, tris(8-hydroxyquinolinoline) aluminum(III) (Alq$_3$) as an electron transport, and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as a buffer layer. The current-voltage and luminance-voltage characteristics were measured in the temperature range of 10[K] and 300[K]. A conduction mechanism in OLEDs has been interpreted in terms of space-charge-limited current(SCLC) and tunneling mechanism.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.155-155
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• 2010

We have investigated organic light-emitting devices by doping phosphorescent orange and fluorescent blue emitters into the separate layers of single host. The electroluminescence spectra and current efficiency were strongly dependent on the location of each doped layers. The luminance-voltage (L-V) characteristics of the device2 (ITO/Hole Transport Layer/Orange Phosphorescent emissive layer/Blue Fluorescent emissive layer/Electron Transport Layer/liF/Al) showed the maximum current efficiency of 19.5 cd/A.