• Korean Chemical Engineering Research
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• v.49 no.3
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• pp.325-329
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• 2011

$Ir(pmb)_{3}$(Iridium(III)Tri(1-phenyl-3-methylbenzimidazolin-2-ylidene-$C,C^{2'}$ ) was synthesized to develop a deep blue-emitting Ir(III) complex. We suggested the ultrasonic reactor to enhance the poor reaction yield of $Ir(pmb)_{3}$. The ultrasonic wave enhanced the reaction yield of $Ir(pmb)_{3}$ because the ultrasound helped non-soluble reactants disperse efficiently and produced free radial during the reaction. The maximum yield of $Ir(pmb)_{3}$ was 42.5%, which was 4 times higher than conventional method. Organic light emitting devices were fabricated with the synthesized mer-$Ir(pmb)_{3}$ which emitted at 405 nm. A range of host materials with large bandgaps (UGH2, mCP and CBP) were tested for developing a deep blue emitting device. In case of the device with mCP as the host material, it emitted deep blue and performed quite well relative to the other host materials tested.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.193-197
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• 2004

The organic light emitting diode (OLED) is proposed as the novel source in the microchip because it has ideal merits (various wavelengths, thin-film structure and overall emitting) for the integration. In this paper, we fabricated the finger-type pin photodiodes for fluorescence detection and the advanced microchip with OLED integrated pn the microchannel. The finger-type in the diode design extended the depletion region and reduced the internal resistance about 31.2% than rectangular-type. The photodiodes had a 100pA leakage current and a 8720 sensitivity $(I_{Light}/I_{Dark})$ at -1 V bias. The interference filter with 32 layers ($SiO_2$, $TiO_2$) was directly deposited on the photodiode. The OLED was fabricated on the ITO coated glass and was bonded with LOC. The application of thin-film OLED increased the excitation efficiency and simplified the integration process extremely. The prototype device of this application had a superior sensitivity of 100nM-LOD in the fluorescence detection.

• Journal of Sensor Science and Technology
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• v.29 no.1
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• pp.27-32
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• 2020

This study proposes a pixel-patterning method for organic light-emitting diodes (OLEDs) based on thermal transfer. An infrared lamp was introduced as a heat source, and glass type donor element, which absorbs infrared and generates heat and then transfers the organic layer to the substrate, was designed to selectively sublimate the organic material. A 200 nm-thick layer of molybdenum (Mo) was used as the lightto-heat conversion (LTHC) layer, and a 300 nm-thick layer of patterned silicon dioxide (SiO₂), featuring a low heat-transfer coefficient, was formed on top of the LTHC layer to selectively block heat transfer. To prevent the thermal oxidation and diffusion of the LTHC material, a 100 nm-thick layer of silicon nitride (SiN_x) was coated on the material. The fabricated donor glass exhibited appropriate temperature-increment property until 249 ℃, which is enough to evaporate the organic materials. The alpha-step thickness profiler and X-ray reflection (XRR) analysis revealed that the thickness of the transferred film decreased with increase in film density. In the patterning test, we achieved a 100 ㎛-long line and dot pattern with a high transfer accuracy and a mean deviation of ± 4.49 ㎛. By using the thermal-transfer process, we also fabricated a red phosphorescent device to confirm that the emissive layer was transferred well without the separation of the host and the dopant owing to a difference in their evaporation temperatures. Consequently, its efficiency suffered a minor decline owing to the oxidation of the material caused by the poor vacuum pressure of the process chamber; however, it exhibited an identical color property.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.449-449
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• 2007

OLED has many advantages of low voltage operation, self radiation, light weight, thin thickness, wide view angle and fast response time to overcome existing liquid crystal display (LCD)'s weakness. Therefore, It draws attention as promising display and has already developed for manufactured goods. Also, OLED is regarded as a only substitute of flexible display with a thin display. A considerable portion of the light originating film emissive centers buried in a solid film never escapes due to internal reflection at the air-film interface and is scattered as edge emission or dissipated within the solid film This is one of the major reasons why the luminous power efficiency of OLED remains low, in spite of research progress in OLED. Although several ways of overcoming this difficulty have been reported, no comprehensive method has been proposed yet. In this paper, we propose that use of anti-reflective coating layers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.905-910
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• 2011

To study encapsulation method for large-area organic light emitting diodes (OLEDs), red emitting OLEDs were fabricated, on which LiF and Al were deposited as inorganic protective films. And then the OLED was attached to flat glass by printing method using epoxy. In case of direct coating of epoxy onto OLED by printing method, luminance and current efficiency were remarkably decreased because of the damage to the OLED by epoxy. In case of depositing LiF and Al as inorganic protective films and then coating of epoxy onto OLED, luminance and current efficiency were not changed. OLED lifetime was more increased through inorganic protective films between OLED and flat glass than that without any encapsulation (8.8 h), i.e., 47 (LiF/Al/epoxy/glass), 62 (LiF/Al/LiF/epoxy/glass), and 84 h (LiF/Al/Al/epoxy/glass). The characteristics of OLED encapsulated with inorganic protective films (attached to flat glass) showed the possibility of application of protective films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.313-314
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• 2005

Organic light emitting diodes(OLEDs) are widely used as one of the information display techniques. We synthesized (1,10-phenanthroline)- (8-hydroxyquinoline) [Zn(Phen)q]. We studied the improvement of OLEDs properties using Zn(phen)q. The Ionization Potential(IP) and the Electron Affinity(EA) of Zn(phen)q investigated using cyclic voltammetry(CV). The IP, EA and Eg were 7.leV, 3.4eV and 3.7eV, respectively. The PL spectrum of Zn(phen)q was yellowish green as the wavelength of 535nm. In this study, we used Zn(phen)q as electron transporting layer(ETL) inserted between emitting layer(EML) and cathode. As a result, Zn(phen)q is useful as electron transporting layer to enhance the performance of OLEDs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.399-402
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• 1998

Electroluminescent(EL) devices based on organic thin films have attracted lots of interests in large-area light-emitting display. One of the problems of such device is a lifetime, where a degradation of the cell is possibly due to an organic layers thickness, morphology and interface with electrode. In this study, light-omitting organic electroluminescent devices were fabricated using Alq$_3$(8-hydroxyquinolinate aluminum) and TPD(N,N'-diphenyl-N,N'-bis(3-methylphenyl(1-1\`-biphenyl]-4,4'-diamine). Where Alq$_3$ is an electron-transport and emissive layer, TPD is a hole-transport layer. The cell structure is ITO/TPD/Alq$_3$/Al and the cell is fabricated by vacuum evaporation method. In a measurement of current-voltage characteristics, we obtained a turn-on voltage at about 9 V. We also investigated stability of the devices using buffer layer with blend of PEI (Poly ether imide) and TPD by varying mot ratios between ITO and Alq$_3$. In current-voltage characteristics measurement, we obtained the turn-on voltage at about 6 V and observed an anomalous behavior at 3∼4 V. And we used other buffer layer of PEDT(3,4-pyrazino-3',4'-ethylenedithio-2,2',5,5'-tetrathiafulvalenium) with ITO/PEDT/TPD/Alq$_3$Al structure. We observed a surface morphology by AFM(Atomic Force Microscopy), UV/visible absorption spectrum, and PL(Photoluminescence) spectrum. We obtained the UV/visible absorption peak at 358nm in TPD and at 359nm in Alq$_3$, and the PL peaks at 410nm in TPD and at 510nm in Alq$_3$. We also studied EL spectrum in the cell structure of ITO/(TPD+PEI)/Alq$_3$/Al.

• Journal of Information Display
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• v.12 no.3
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• pp.141-144
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• 2011

To improve the performance of blue fluorescent and green phosphorescent organic light-emitting diode devices, Merck developed novel green phosphorescent host and electron-transporting materials. The newly developed electron-transporting material improves the external quantum efficiency of blue fluorescent devices up to 8.7%, with an excellent lifetime. In combination with the newly developed host materials, the efficiency of green phosphorescent devices can be improved by a factor of 1.7, and the lifetime by a factor of 7.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.281-281
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• 2009

Electrical analysis of red, green and blue (RGB) organic light emitting diode (OLED), which were measured at various temperatures from 230K to 370K by steps of 20K, were investigated using current-voltage(I-V) characteristics. Ideality factor and series resistance were obtained from the thermionic emission theory. Experimental results showed that the ideality factors were 2.12 for red, 3.80 for green, and 6.03 for blue OLED at 290K, respectively. The series resistance were 1960, 2190, 2630$\Omega$ for red, green and blue OLED at the same temperature. It was found that the OLED ideality factors were much higher than near unity for well-behaved silicon diodes, because of the organic material and multi-layer fabrication diode. In addition, the series resistance was near 2k$\Omega$ range. More researches are required to reduce both ideality factors and series resistance to increase the efficiency of OLEDs.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.74-75
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• 2006

In organic opto-electronic applications, such as light emitting diodes (LEDs) and photovoltaic devices (PVDs), the morphology of the active layer is of crucial importance. To control the morphology of the active layer the self-assembling properties of block copolymers was used. Several rod-coil semiconducting diblock copolymers consisting of a conjugated block and a second coil block functionalized with electron transporting and/or accepting materials (such as $C_{60}$) were synthesized. The conjugated block acting as light absorbing, electron donating and hole transporting material. The donor/acceptor photovoltaic devices performance with active layer the above mentioned semiconducting block copolymers will be presented.