• Journal of Information Display
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• v.6 no.2
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• pp.12-15
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• 2005

We propose a new pixel design for active matrix organic light emitting diode (AM-OLED) displays using hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs). The pixel circuit is composed of five TFTs and one capacitor, and employs only one additional control signal line. It is verified by SPICE simulation results that the proposed pixel compensates the threshold voltage shift of the a-Si:H TFTs and OLED.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.17-18
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• 2006

Flat Panel Displays (FPDs) have made a revolution in the display industry. TFT-LCD (Thin Film Transistor Liquid Crystal Display) has been the main player of FPD for last two decades. As the industry continuously develops the technology for better performance with lower cost is constantly demanded where several post LCD technologies are being developed. One of the prime candidates of post LCD technology is AMOLED (Active Matrix Organic Light Emitting Diode) that is considered to be an ideal FPD due to its extraordinary display performance and potentially low cost display structure. This technology has been accepted to small size display applications, such as cellular phone, PDA and PMP, etc. In this paper it is discussed that how this technology can be extended to large size display applications, such as TV. The technical issues and solutions of TFT backplane and color patterning of OLED materials are discussed and proposed

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.413-418
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• 2006

Highly stable thin-film transistor (TFT) pixel employing both low temperature polycrystalline silicon (LTPS) and amorphous silicon (a-Si) for active matrix organic light emitting diode (AMOLED) is discussed. ELA (excimer laser annealing) LTPS-TFT pixel should compensate $I_{OLED}$ variation caused by the non-uniformity of LTPS-TFT due to the fluctuation of excimer laser energy and amorphous silicon TFT pixel is desired to suppress the decrease of $I_{OLED}$ induced by the degradation of a-Si TFT. We discuss various compensation schemes of both LTPS and a-Si TFT employing the voltage and the current programming.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1297-1300
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• 2005

We propose a new pixel design for active matrix organic light emitting diode (AM-OLED) displays using hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs). The pixel circuit is composed of five TFTs and one capacitor, and employs only one additional control signal line. It is verified by SPICE simulation results that the proposed pixel compensates the threshold voltage shift of the a-Si:H TFTs and OLED.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.589-593
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• 2005

It is well known that proper encapsulation is crucial for the lifetime of organic light emitting diode (OLED) displays. With the development of increasingly better barrier coatings and perimeter seals, it has now become very desirable to be able to precisely measure the rate of water vapor and oxygen permeation through barrier coatings and perimeter sealing. This paper demonstrates a new permeation measurement method that uses tritium-containing water (HTO) as a tracer material. The theoretical detection limit of this direct method is $2.4{\times}10^{-8}g/(m^2day)$.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.05a
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• pp.259-264
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• 2006

ITO 투명전도막은 현재 FPD(flat panel display)소자의 전극으로 사용되고 있다. 특히 근래에 많은 연구가 진행되고 있는 유기발광다이오드(organic light emitting diode: OLED) 소자의 제작에 투명전도막으로 많은 응용이 되고 있다. ITO 를 이용한 디스플레이 소자는 ITO 의 계면 상태와 전기적 특성에 따라 그 특성이 크게 변한다. 본 연구에서는 $O_2$ 플라즈마 처리를 통하여 ITO 투명전도막의 전기적 특성 및 표면상태의 변화에 대하여 조사하고, 이러한 특성 변화에 따라 현재 많은 연구가 진행되고 있는 OLED 소자의 제작에 응용하기 위하여 유기용액을 이용한 접촉각 측정을 통하여 $O_2$ 플라즈마 처리에 따른 ITO 투명전도막과 유기용액의 접착력에 대하여 고찰하였다.

• Electronics and Telecommunications Trends
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• v.38 no.1
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• pp.26-35
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• 2023

Inkjet printing is a typical printing technology with many advantages, such as material cost reduction, noncontact pattern formation without a mask, and process simplification. With the recent and rapid development of ink materials, parts and equipment, and process technologies related to inkjet printing, it is becoming a major process in various areas of the display industry. In particular, for the QD-OLED (quantum dot-organic light-emitting diode) display announced by Samsung Display in 2022, quantum dot pixel production by applying inkjet printing is a key technology. We analyze inkjet printing technology for mass production applied to the display industry and discuss the technology development trends in academia and industry toward the realization of next-generation displays.

• Journal of the Korean Vacuum Society
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• v.21 no.6
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• pp.328-332
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• 2012

The work function of Ag (silver) is too low (~4.3 eV) to be used as an electrode of T-OLED (Top Emission Organic Light Emitting Diode). To solve this weakness, researches used plasma-, UV-, or thermal treatment on Ag films in order to increase the work function (~5.0 eV). So, most of studies have focused only on the work function of various treated Ag films, but studies focusing on nanomechanical properties were very important to investigate the efficiency and life time of T-OLED etc. In this paper, we focused on the mechanical properties of the Ag and $AgO_x$ film. The Ag was deposited on a glass substrate with the thickness of 150 nm by using rf-magnetron sputter with the power was fixed at 100 W and working pressure was 3 mTorr. The deposited Ag film was UV treated by UV lamp for several minutes (0~9 min). We measured the sheet resistance and mechanical property of the deposited film. From the experimental result, there were some differences of the sheet resistance and surface hardness of Ag thin film between short time (0~3 min) and long time UV treatment. These result presumed that the induced stress was taken place by the surface oxidation after UV treatment.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.198.1-198.1
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• 2016

Organic light-emitting diode (OLED) displays have promising potential to replace liquid crystal displays (LCDs) due to their advantages of low power consumption, fast response time, broad viewing angle and flexibility. Organic light emitting materials are vulnerable to moisture and oxygen, so inorganic thin films are required for barrier substrates and encapsulations.[1-2]. In this work, the silicon-based inorganic thin films are deposited on plastic substrates by plasma-enhanced chemical vapor deposition (PECVD) at low temperature. It is necessary to deposit thin film at low temperature. Because the heat gives damage to flexible plastic substrates. As one of the transparent diffusion barrier materials, silicon oxides have been investigated. $SiO_x$ have less toxic, so it is one of the more widely examined materials as a diffusion barrier in addition to the dielectric materials in solid-state electronics [3-4]. The $SiO_x$ thin films are deposited by a PECVD process in low temperature below $100^{\circ}C$. Water vapor transmission rate (WVTR) was determined by a calcium resistance test, and the rate less than $10.^{-2}g/m^2{\cdot}day$ was achieved. And then, flexibility of the film was also evaluated.

• Journal of the Semiconductor & Display Technology
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• v.19 no.4
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• pp.126-129
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• 2020

We introduce a lifetime assessment technique using deep learning algorithm with complex electrical parameters such as resistivity, permittivity, impedance parameters as integrated indicators for predicting the degradation of the organic molecules. The evaluation system consists of fully automated in-situ measurement system and multiple layer perceptron learning system with five hidden layers and 1011 perceptra in each layer. Prediction accuracies are calculated and compared depending on the physical feature, learning hyperparameters. 62.5% of full time-series data are used for training and its prediction accuracy is estimated as r-square value of 0.99. Remaining 37.5% of the data are used for testing with prediction accuracy of 0.95. With k-fold cross-validation, the stability to the instantaneous changes in the measured data is also improved.