• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1311-1314
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• 2008

We have developed new electrical dopants of rhenium oxide ($ReO_3$) and cupper iodide (CuI) as p-dopants and rubidium carbonate ($Rb_2CO_3$) as an n-dopant, respectively. $ReO_3$ has advantage of low temperature evaporation (about $300^{\circ}C$) with enhanced device stability. Various kinds of high performance organic light emitting diodes have been realized, including bottom emission, tandem, and top-emission OLEDs.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.928-931
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• 2008

Using 4,4'4"-tris(N-carbazolyl)-triphenylamine (TCTA) small molecule interlayer, we have fabricated efficient green PHOLED by solution process. The maximum current and power efficiency values of 33.7 cd/A and 19.6 lm/W are demonstrated, respectively. Results reveal a way to fabricate the PHOLED using TCTA interlayer by solution process, promising for efficient and simple manufacturing.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1116-1119
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• 2008

We developed phosphorescent white OLEDs with high efficiency and color stability. By engineering device architecture in which confined excitons within the emissive layer by using adequate interlayer and balanced recombination of charge carriers by using stepwise hole transporting layer system, these WOLEDs showed power efficacy of 43.6 lm/W with CRI = 62 and 36 lm/W with CRI = 72 at $100\;cd/m^2$ without outcoupling enhancements.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.903-906
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• 2003

Doping a small amount of a phosphorescent dye into an organic light-emitting diodes(OLED) can lead to a significant improvement in the device properties. The fluorescent host materials like TAZ, CBP have been used, but have a problem of rapid decay of efficiency at high current densities. To alleviate this problem, phosphorescent host was introduced. The whole configuration of OELD fabricated was ITO/a-NPD(50nm)/Zn $cluster:Ir(ppy)_{3}(30nm)/BCP{(10nm)/Alq_{3}(20nm)$ /Al:Li. The OLED showed high luminance (> 50,000 $cd/m^{2}$ ) and external efficiency(5.7%). At higher current densities, rapid decay of external quantum efficiency or host emission, which was frequently observed in the fluorescent host system, were not observed.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1014-1017
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• 2006

Admittance Spectroscopic analysis was applied to study the effect of LiF buffer layer and to model the equivalent circuit for $ITO/Alq_3/LiF/Al$ device structure. The admittance spectroscopic analysis of the devices with LiF layer shows reduction in contact resistance $(R_C)$, parallel resistance $(R_P)$ and increment in parallel capacitance $(C_P)$.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.391.1-391.1
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• 2014

광물질로 인광물질을 사용한 유기발광다이오드(Organic Light Emitting Diode, OLED)는 재결합에 의해 형성된 여기자를 발광에 모두 이용할 수 있기 때문에 내부 양자효율이 100%로 알려져 있다. 하지만 유기층에서 발생된 빛이 소비자에게 전달되기까지의 경로에서 발생되는 wave guiding effect로 인해, 발생된 빛의 20%만이 전달된다. 특히 bottom emission type의 OLED에서 glass와 air사이의 굴절률이 달라 발생되는 전반사에 의해 손실되는 빛의 양은 35%에 달한다. 따라서 본 연구에서는 glass와 air사이의 전반사를 줄이고 광추출을 위해 습식 방법으로 hemisphere type의 ZnS를 제작하였다. 제작된 ZnS는 직경 200nm까지 성장하였으며, 이렇게 제작된 ZnS nano lens가 적용된 OLED device에서 휘도가 20% 이상 향상되는 것을 확인하였다.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.79-80
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• 2006

In order to raise productivity of the OLED and realization of the OLED TV, it is required to improve the design of the board size glass panel. The large-size glass substrate has some difficulties regarding its deflection during handling operation due to its small thickness (0.7t) which is not even enough to stand its mass itself. This paper is demonstrating a new solution of this difficult through clamping and bending end condition, which helps to minimize the deflection of the glass substrate.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.793-796
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• 2005

A structure and a design of device were developed to fabricate large-scale active matrix organic light-emitting diode (AMOLED) display with good color purity and high aperture ratio. With these technologies, we developed a full color 14.1 inch WXGA AMOLED display. For the integration of OLED on an active matrix a-Si TFT backplane, an efficient top emission OLED is essential since the TFT circuitry covers a large position of the pixel aperture. These technologies will enable up the OLED applications to larger size displays such as desktop monitors and TVs.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.692-696
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• 2005

In an attempt to fabricate all inclusive display systems we are presenting a study on several elements that would be used as building blocks for all-on-board integrated applications on stainless steel foils. These systems would include in the same substrate all or many of the components needed to drive a flat panel OLED display. We are reporting results on both digital and analog circuits on stainless steel foils. Shift registers running at speeds greater than 1.0MHz are shown as well as oscillators operating at over 40MHz. Pixel circuits for driving organic light emitting diodes are presented. The device technology of choice is that based on poly-silicon TFT technology as it has the potential of producing circuits with good performance and considerable cost savings over the established processes on quartz or glass substrates (amorphous Silicon a-Si:H or silicon on Insulator SOI).

• Journal of the Semiconductor & Display Technology
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• v.6 no.1 s.18
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• pp.1-6
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• 2007

In order to raise productivity of the OLED and realization of the OLED TV, the enlargement of the mother glass substrate is required. The large-size glass substrate has some difficulties regarding its deflection during handling operation due to its thin thickness (0.5$\sim$0.7t) which is not even enough to stand its mass itself. This paper is demonstrating a new solution of this difficult through clamping and bending boundary condition, which helps to minimize the deflection of the glass substrate. Based on the developed method, the experiments had been done for verifying the proposed method to minimize the glass-deflection. With the developed method, the new design of glass substrate handler can be proposed to allow the large OLED displays be manufactured.