Admittance Spectroscopic Analysis of Organic Light Emitting Diodes with a LiF Buffer Layer

  • Kim, Hyun-Min (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Park, Hyung-June (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Yi, Jun-Sin (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Oh, Se-Myoung (Dept. of physics, Brain Korea 21 Physics Research Division and Institute of Basic Science, Sungkyunkwan University) ;
  • Jung, Dong-Geun (Dept. of physics, Brain Korea 21 Physics Research Division and Institute of Basic Science, Sungkyunkwan University)
  • Published : 2006.08.22

Abstract

Admittance Spectroscopic analysis was applied to study the effect of LiF buffer layer and to model the equivalent circuit for $ITO/Alq_3/LiF/Al$ device structure. The admittance spectroscopic analysis of the devices with LiF layer shows reduction in contact resistance $(R_C)$, parallel resistance $(R_P)$ and increment in parallel capacitance $(C_P)$.

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