• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.579-581
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• 2004

A new DCM derivative containing the phenoxazine moiety (DCPXZ) has been synthesized for use as a red fluorescent dye molecule in organic light-emitting diodes (OLEDs). The photoluminescence and electroluminescence properties of DCPXZ were examined. The maximum photoluminescence of DCPXZ in chloroform solution ($10^{-5}$ mol) was observed at 616 nm. EL devices were fabricated with the structure ITO/PEDOT-PSS/Cu-PC(15nm)/${\alpha}$-NPD(45nm)/$Alq_3$:DCPXZ(30nm)/$Alq_3$(30nm)/LiF(0.5nm)/Al. The maximum EL emission for the 2.0% DCPXZ-doped device was at 608 nm with CIE coordinates (0.57, 0.42). The EL device exhibited a maximum brightness of 15,000 cd/$m^2$ at 19.4 V and a power efficiency of 1.04 lm/W at a luminance of 100 cd/$m^2$.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.272-276
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• 2004

Great strides in organic light emitting device (OLED) technology have resulted in a number of commercial products. To continue this growth into large area displays, for example televisions, an understanding of the mechanisms that drive the OLED device efficiency and lifetime performance is critical. In this work, we consider maximizing the efficiency lifetime product based on phosphorescent OLED ($PHOLED^{TM}$) technology. We report green PHOLEDs with luminous efficiency of 82 cd/A, 5.7 V and 10,000 hours lifetime at 1,000 cd/$m^2$,red PHOLEDs with CIE of (0.67,0.33), 11 cd/A and 35,000 hours lifetime at 500 cd/$m^2$ and recent progress in blue demonstrating efficiencies of 18 cd/A at 200 cd/$m^2$.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.8 no.2
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• pp.25-31
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• 2009

The image processing methods are widely used in many industrial fields to detect defections in inspection devices. In this study an image processing method was conducted for the detection of abnormal pixels in a OLED(Organic Light Emitting Diode) type panel which is used for small size displays. The display quality of an OLED device is dependent on the pixel formation quality. So, among the so many pixels, to find out the faulty pixels is very important task in manufacturing processing or inspection division. We used a line scanning type BW(Black & White) camera which has very high resolution characteristics to acquire an image of display pixel patterns. And the various faulty cases in pixel abnormal patterns are considered to detect abnormal pixels. From the results of the research, the normal BW pixel image could be restored to its original color pixel.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.252-252
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• 2009

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.839-842
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• 2009

In this paper, chalcogenide glasses material(Se, Te, Sb) is firstly used as encapsulation layer of OLEDs under high vacuum of $10^{-4}$Pa. In the experiments, properties of OLEDs encapsulated by Se, Te, Sb thin film is compared with that of device encapsulated by traditional method. It is found that Se, Te, Sb film can extend lifetime of devices to 1.4, 2, 1.3 times respectively. Chalcogenide glasses film as encapsulation layer has little effect on some characteristics of device. The research indicated that OLEDs can be well protected upon applying Se, Te, Sb film as encapsulation layer. It is clear that it can prolong the lifetime obviously.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.493-494
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• 2006

We have demonstrated highly efficient WOLED with two separated emissive layers using a blue fluorescent dye and a red phosphorescent dye. we also obtain stable $CIE_{x,y}$ coordinates with two-layered WOLEDs. The device structure was ITO/2-TNATA/NPB/two separated emissive layers/Bphen/Liq/Al. The maximum luminous efficiency of the device was 11.6 cd/A at $20\;mA/cm^2$ and $CIE_{x,y}$ coordinates varied from (x = 0.33, y = 0.37) at 6V to (x = 0.28, y = 0.35) at 14V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.6
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• pp.512-515
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• 2009

We have fabricated blue phosphorescent organic light emitting diodes (PHOLEDs) using a 3,5'-N,N'-dicarbazole-benzene (mCP) host and iridium (III) bis[(4,6-difluorophenyl)-pyridinato-N,$C^{2'}$] picolinate (Flrpic) guest materials, The Flrpic was partially doped into the mCP host layer, for investigating recombination zone, current efficiency, and emission characteristics of the blue PHOLEDs. The recombination of electrons and holes takes place inside the mCP layer adjacent to the mCP/hole blocking layer interface. The best current efficiency was obtained in a device with an emission layer structure of mCP (10 nm)/mCP:Flrpic (20 nm, 10%). The high current efficiency in this device was attributed to the confinement of Ffrpic triplet excitons by the undoped mCP layer with high triplet energy, which blocks diffusion of Ffrpic excitons to the adjacent hole transport layer with a lower triplet energy.

• Journal of Sensor Science and Technology
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• v.28 no.6
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• pp.402-406
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• 2019

Recently, semiconducting organic materials have been spotlighted as next-generation electronic materials based on their tunable electrical and optical properties, low-cost process, and flexibility. However, typical organic semiconductor materials are vulnerable to moisture and oxygen. Therefore, an encapsulation layer is essential for application of electronic devices. In this study, SiN_x thin films deposited at process temperatures below 150 ℃ by plasma-enhanced chemical vapor deposition (PECVD) were characterized for application as an encapsulation layer on organic devices. A single structured SiN_x thin film was optimized as an organic light-emitting diode (OLED) encapsulation layer at process temperature of 80 ℃. The optimized SiN_x film exhibited excellent water vapor transmission rate (WVTR) of less than 5 × 10^-5 g/㎡·day and transmittance of over 87.3% on the visible region with thickness of 1 ㎛. Application of the SiN_x thin film on the top-emitting OLED showed that the PECVD process did not degrade the electrical properties of the device, and the OLED with SiN_x exhibited improved operating lifetime

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1638-1641
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• 2008

We have investigated the effectiveness of a gravure printing method for the fabrication of organic light-emitting diode (OLED) and Organic Thin Film Transistor (OTFT). Printing of the organic layers was performed with a small-scale gravure coating machine, while the metallic layers were vacuum-evaporated. Devices with gravure-printed layers are at least comparable with the spin-coated devices. Effects of the solvent formulation and surface energy mismatch between the organic layer materials on the printed patterns and device performance were discussed. We will present the initial design and experimental data of OTFT fabricated by roll-type soft contact transfer process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.137-140
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• 2004

We treated $O_2$ plasma on ITO thin film using RIE (Reactive Ion Etching) system, and analyzed the ingredient of ITO thin film according to change of processing conditions. The ingredient analysis of ITO thin film was used by EDS (Energy Dispersive Spectroscopy) and XPS (X-ray Photoelectron Spectroscopy) to compare and analyze the ingredient of bulk and surface. We measured electrical resistivity using Four-Point-Probe and calculated sheet resistance, and ITO surface roughness was measured by using AFM (Atomic Force Microscope). Finally, we fabricated OLEDs (Organic Light-Emitting Diodes) device using substrate that was treated optimum ITO surface. The result of the study for electrical and optical properties using I V L System (Flat Panel Display Analysis System), we confirmed that electrical properties (I-V) and optical properties (L-V) were improved.