• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.264-264
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• 2008

We fabricated a pentacene thin-film transistor with a Polymer/$SiO_2$ Double Gate Dielectrics and obtained a device with better electrical characteristics. This device was found to have a field-effect mobility of $0.04cm^2$/Vs, a threshold voltage of -2V, an subthreshold slope of 1.3 V/decade, and an on/off current ratio of $10^7$.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 춘계학술발표회 논문집
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• pp.156-156
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• 2012

본 연구에서는 organic 반도체 전자소자의 성능 향상을 위해 그래핀 전극과 hexagonal boron nitride(h-BN) 절연체를 이용한 높은 성능의 전자소자를 구현 하였다. 이를 위해 우리는 화학적 합성법으로 준비된 그래핀을 micro sacale pattern된 PDMS를 이용한 dry transfer 방법을 이용하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.182-183
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• 2008

We fabricated a pentacene thin film transistor with Poly-vinylalcohol (PVA) as a dielectric. And we used Poly(9-vinylcarbazole) (PVK) as a buffer layer to improve the electrical characteristics. PVK is a material used often host material for OLED device, as it has good film forming properties, large HOMO-LUMO(highest occupied molecular orbital-lowest unoccupied molecular orbital) bandgap. The performance of a OTFT device with PVA gate dielectric was improved by using the PVK. Field effect mobility, threshold voltage, and on-off current ratio of device with PVK layer were about 0.6 $cm^2$/Vs, -17V, and $5\times10^5$, respectively.

• ETRI Journal
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• 제35권4호
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• pp.734-737
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• 2013

Nonvolatile ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) memory based on an organic thin-film transistor with inkjet-printed dodecyl-substituted thienylenevinylene-thiophene copolymer (PC12TV12T) as the active layer is developed. The memory window is 4.5 V with a gate voltage sweep of -12.5 V to 12.5 V. The field effect mobility, on/off ratio, and gate leakage current are 0.1 $cm^2/Vs$, $10^5$, and $10^{-10}$ A, respectively. Although the retention behaviors should be improved and optimized, the obtained characteristics are very promising for future flexible electronics.

• 한국전기전자재료학회논문지
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• 제25권7호
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• pp.531-536
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• 2012

We herein present results of flat and uniform polymer-blended small molecular semiconductor thin films. Which were produced for organic thin film transistors (OTFTs), using a simple pre-metered horizontal dipping process. The organic semiconducting thin films were composed of 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-PEN) composite blended with a polymer binder of poly(${\alpha}$-methylstyrene) (PaMS). We show that the pre-metered horizontal-dip-coating(H-dip-coating) process allowed the critical control of the thickness of the blended TIPS-PEN:PaMs thin film. The fabricated OTFTs using the TIPS-PEN:PaMs films exhibited maximum field-effect mobility of $0.22\;cm^2\;V^{-1}\;s^{-1}$. These results demonstrated that H-dip-coated TIPS-PEN:PaMS films show considerable promise for the production of reliable, reproducible, and high-performance OTFTs.

• 청정기술
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• 제30권1호
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• pp.13-22
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• 2024

본 연구에서는 6,13-Bis(triisopropylsilylethynyl)pentacene(TP):2-Decyl-7-phenyl[1]benzothieno[3,2-b][1]benzothiophene(BT):Poly styrene (PS) 블랜딩 thin film transistor (TFT)를 제작 광 흡수 센서로의 활용에 대해 탐구한다. BT의 혼합으로 인해 off current 감소와 on/off ratio 향상을 동시에 달성하였다. 특히, TP:BT:PS (1:0.25:1 w/w) 샘플은 우수한 광 흡수 특성을 보여주었고, 이를 통해 높은 성능의 광 흡수 장치 제작이 가능함을 입증했다. 다양한 혼합 비율의 결정 구조와 전기적 특성에 대한 분석을 통해 TP:BT:PS (1:0.25:1 w/w) 샘플이 최적임을 확인하였다. 이 결과는 광 흡수 장치의 발전 뿐만 아니라 혼합 organic semiconductor (OSC)의 광전자 시스템 개발에 긍정적인 기대효과를 미칠 수 있을 것이며, 이를 통해 단일 OSC 사용의 제약을 극복하고, 미세 조정된 광학 응답을 갖춘 고성능 OSC TFT를 제작하여 의료 전자소자, 산업용 전자소자 등에 응용할 수 있을 것으로 기대된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.268-268
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• 2016

Chemical sensors have attracted much attention due to their various applications such as agriculture product, cosmetic and pharmaceutical components and clinical control. A conventional chemical and biological sensor is consists of fluorescent dye, optical light sources, and photodetector to quantify the extent of concentration. Such complicated system leads to rising cost and slow response time. Until now, the most contemporary thin film transistors (TFTs) are used in the field of flat panel display technology for switching device. Some papers have reported that an interesting alternative to flat panel display technology is chemical sensor technology. Recent advances in chemical detection study for using TFTs, benefits from overwhelming progress made in organic thin film transistors (OTFTs) electronic, have been studied alternative to current optical detection system. However numerous problems still remain especially the long-term stability and lack of reliability. On the other hand, the utilization of metal oxide transistor technology in chemical sensors is substantially promising owing to many advantages such as outstanding electrical performance, flexible device, and transparency. The top-gate structure transistor indicated long-term atmosphere stability and reliability because insulator layer is deposited on the top of semiconductor layer, as an effective mechanical and chemical protection. We report on the fabrication of InGaZnO TFTs with silver nanowire as the top gate electrode for the aim of chemical materials detection by monitoring change of electrical properties. We demonstrated that the improved sensitivity characteristics are related to the employment of a unique combination of nano materials. The silver nanowire top-gate InGaZnO TFTs used in this study features the following advantages: i) high sensitivity, ii) long-term stability in atmosphere and buffer solution iii) no necessary additional electrode and iv) simple fabrication process by spray.

• 마이크로전자및패키징학회지
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• 제16권4호
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• pp.17-22
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• 2009

Two different organic-inorganic hybrid thin film transistors (OITFTs) with the structures of glass/ITO/ZnO/PMMA/Al (staggered structure) and glass/ITO/PMMA/ZnO/Al (inverted staggered structure), were fabricated and their electrical and structural properties were compared. The ZnO thin films used as active channel layers were deposited by the atomic layer deposition (ALD) method at a temperature of $100^{\circ}C$. To investigate the effect of the substrates on their properties, the ZnO films were deposited on bare glass, PMMA/glass and ITO/glass substrates and their crystal properties and surface morphologies were analyzed. The structural properties of the ZnO films varied with the substrate conditions. The ZnO film deposited on the ITO/glass substrate showed better crystallinity and morphologies, such as a higher preferred c-axis orientation, lower FWHM value and larger particle size compared with the one deposited on the PMMA/glass substrate. The field effect mobility ($\mu$), threshold voltage ($V_T$) and $I_{on/off}$ switching ratio for the OITFT with the staggered structure were about $0.61\;cm^2/V{\cdot}s$, 5.5 V and $10^2$, whereas those of the OITFT with the inverted staggered structure were found to be $0.31\;cm^2/V{\cdot}s$, 6.8 V and 10, respectively. The improved electrical properties for the staggered OITFTs may originate from the improved crystal properties and larger particle size of the ZnO active layer.

• Bulletin of the Korean Chemical Society
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• 제33권9호
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• pp.3061-3070
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• 2012

Novel 2-hexylthieno[3,2-b]thiophene-containing conjugated molecules have been synthesized via a reduction reaction using tin chloride in an acidic medium. They exhibited good solubility in common organic solvents and good self-film and crystal-forming properties. The single-crystalline objects were fabricated by a solvent slow diffusion process and then were employed for fabricating field-effect transistors (FETs) along with thinfilm transistors (TFTs). TFTs made of 5 and 6 exhibited carrier mobility as high as 0.10-0.15 $cm^2V^{-1}s^{-1}$. The single-crystal-based FET made of 6 showed 0.70 $cm^2V^{-1}s^{-1}$ which was relatively higher than that of the 5-based FET (${\mu}=0.23cm^2V^{-1}s^{-1}$). In addition, we fabricated organic photovoltaic (OPV) cells with new 2-hexylthieno [3,2-b]thiophene-containing conjugated molecules and methanofullerene [6,6]-phenyl C61-butyric acid methyl ester ($PC_{61}BM$) without thermal annealing. The ternary system for a bulk heterojunction (BHJ) OPV cell was elaborated using $PC_{61}BM$ and two p-type conjugated molecules such as 5 and 7 for modulating the molecular energy levels. As a result, the OPV cell containing 5, 7, and $PC_{61}BM$ had improved results with an open-circuit voltage of 0.90 V, a short-circuit current density of 2.83 $mA/cm^2$, and a fill factor of 0.31, offering an overall power conversion efficiency (PCE) of 0.78%, which was larger than those of the devices made of only molecule 5 (${\eta}$~0.67%) or 7 (${\eta}$~0.46%) with $PC_{61}BM$ under identical weight compositions.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2007년도 추계종합학술대회
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• pp.758-760
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• 2007

최근에 유기물 전계효과 트랜지스터의 연구는 전자 소자 분야에서 널리 알려져 있다. 특히 본 연구에서는 CuPc 물질을 기본으로 하여 소자를 제작하고, 또한 기판의 온도를 달리 하여 CuPc/Au 구조 소자의 표면 전위 특성을 측정하였다. 기판은 slide glass를 사용하였고, CuPc 박막파 Au 전극은 진공 증착법을 이용하였다. 측정 온도의 범위는 0 - $100^{\circ}C$이었으며, 모든 측정은 진공 상태에서 측정이 이루어 졌다. 상온에서의 표면 전위 값은 약 600mV의 값을 보이고 있으며, 기판의 온도가 $100^{\circ}C$일 때 표면 전위 값은 약 500mV의 값으로 감소하는 것을 알 수 있다. 이러한 표면 전위 값의 변화는 기판의 온도가 상승하면서 CuPc 벌크 박막의 특성이 변화하는 것으로 판단되며, AFM 측정을 통해 확인 할 수 있었다.