• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.172-172
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• 2010

In the area of optoelectronic devices based on GaN and related ternary compounds, the two-dimensional system like as quantum wells (QWs) has been investigated as an effective structure for improving the light-emitting efficiency. Generally, the quantum well active regions in III-nitride light-emitting diodes grown on conventional c-plane sapphire substrates have critical problems given by the quantum confined Stark effect (QCSE) due to the effects of strong piezoelectric and spontaneous polarizations. However, the QWs grown on nonpolar templates are free from the QCSE since the polar-axis lies within the growth plane of the template. Also the unique characteristic of linear polarized light emission from nonpolar QW structures is attracting attentions because it is proper to the application of back-light units of liquid crystal display. In this study, we characterized optical properties of the a-plane InGaN/GaN QW structures by temperature-dependent photoluminescence (TDPL) measurements. From the photoluminescence (PL) spectrum measured at 300 K, green emission centered at 520 nm was observed for the QW region. Since indium incorporation on nonpolar QWs is lower than that on c-plane, this high indium-doping on a-plane InGaN QWs is not common. Therefore, the effect of high indium composition on optical properties in a-plane InGaN QWs will be extensively studied.

• Korean Journal of Metals and Materials
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• v.49 no.5
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• pp.400-405
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• 2011

ZnO nanotube arrays were synthesized by a two-step process: electrodeposition and selective dissolution. In the first step, ZnO nanorod arrays were grown on an Au/Si substrate by using a homemade electrodeposition system. ZnO nanorod arrays were then selectively dissolved in an etching solution composed of 0.125 M NaOH, resulting in hollow ZnO nanotube arrays. It is suggested that the formation mechanism of the ZnO nanotube arrays might be attributed to the preferred surface adsorption of hydroxide ion ($OH^{-1}$) on a positive polar surface followed by selective dissolution of the metastable Zn-terminated ZnO (0001) polar surface caused by the difference in the surface energy per unit area between the ZnO nanorod and nanotube.

• Smart Structures and Systems
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• v.30 no.2
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• pp.195-207
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• 2022

Computational drawbacks associated with regular predictive models have motivated engineers to use hybrid techniques in dealing with complex engineering tasks like simulating the compressive strength of concrete (CSC). This study evaluates the efficiency of tree potential metaheuristic schemes, namely shuffled complex evolution (SCE), multi-verse optimizer (MVO), and beetle antennae search (BAS) for optimizing the performance of a multi-layer perceptron (MLP) system. The models are fed by the information of 1030 concrete specimens (where the amount of cement, blast furnace slag (BFS), fly ash (FA1), water, superplasticizer (SP), coarse aggregate (CA), and fine aggregate (FA2) are taken as independent factors). The results of the ensembles are compared to unreinforced MLP to examine improvements resulted from the incorporation of the SCE, MVO, and BAS. It was shown that these algorithms can considerably enhance the training and prediction accuracy of the MLP. Overall, the proposed models are capable of presenting an early, inexpensive, and reliable prediction of the CSC. Due to the higher accuracy of the BAS-based model, a predictive formula is extracted from this algorithm.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.185-185
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• 2011

ZnTe semiconductor is very attractive materials for optoelectronic devices in the visible green spectral region because of it has direct bandgap of 2.26 eV. The prototypes of ZnTe light emitting diodes (LEDs) have been reported [1], showing that their green emission peak closely matches the most sensitive region of the human eye. Another application to photovoltaics proved that ZnTe is useful for the production of high-efficiency multi-junction solar cells [2,3]. By using the pulse laser deposition system, ZnTe thin films were deposited on ZnO thin layer, which is grown on (0001) Al2O3substrates. To produce the plasma plume from an ablated ZnO and ZnTe target, a pulsed (10 Hz) YGA:Nd laser with energy density of 95 mJ/$cm^2$ and wavelength of 266 nm by a nonlinear fourth harmonic generator was used. The laser spot focused on the surface of the ZnO and ZnTe target by using an optical lens was approximately 1 mm2. The base pressure of the chamber was kept at a pressure around $10^{-6}$ Torr by using a turbo molecular pump. The oxygen gas flow was controlled around 3 sccm by using a mass flow controller system. During the ZnTe deposition, the substrate temperature was $400^{\circ}C$ and the ambient gas pressure was $10^{-2}$ Torr. The structural properties of the samples were analyzed by XRD measurement. The optical properties were investigated by using the photoluminescence spectra obtained with a 325 nm wavelength He-Cd laser. The film surface and carrier concentration were analyzed by an atomic force microscope and Hall measurement system.

• Membrane and Water Treatment
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• v.8 no.3
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• pp.259-277
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• 2017

Adsorption is a widely used technique for the removal of dyes from wastewaters by variety of adsorbents. In this work, the main focus is on the potential assessment of anion exchange membrane for the removal of different dyes using batch system and investigation of experimental data by applying various kinetic and thermodynamic models. The removal of anionic dyes i.e., Eosin-B, Eriochrome Black-T and Congo Red by anion exchange membrane BII from aqueous solution was carried out and effect of various parameters such as contact time, membrane dosage, temperature and ionic strength on the percentage removal of anionic dyes was studied. The experimental data was assessed by kinetic models namely pseudo-first-order, pseudo-second-order, Elovich liquid film diffusion, Bangham and the modified Freundlich models equation have been used to analyze the experimental data. These results indicate that the adsorption of these anionic dyes on BII follows pseudo-second-order kinetics with maximum values of regression coefficient (0.992-0.998) for all the systems. The adsorption of dyes was more suitable to be controlled by a liquid film diffusion mechanism. The adsorptive removal of dye Eosin-B and Eriochrome Black-T were decreased with temperature and thermodynamic parameters such as free energy (${\Delta}G^o$), enthalpy (${\Delta}H^o$) and entropy (${\Delta}S^o$) for adsorption of dyes on membrane BII were calculated at 298 K, 308 K and 318 K. The values of enthalpy and entropy were negative for EB and EBT representing that the adsorption of these dyes on BII is physiosorptive and exothermic in nature. Whereas the positive values of enthalpy and entropy for CR adsorption on BII, indicating that its adsorption is endothermic and spontaneous in nature. It is evident from this study that anion exchange membrane has shown good potential for the removal of dyes from aqueous solution and it can be used as adsorbent for dues removal on commercial levels.

• Korean Journal of Materials Research
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• v.23 no.8
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• pp.469-475
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• 2013

Al-doped ZnO(AZO) thin films were synthesized using atomid layer deposition(ALD), which acurately controlled the uniform film thickness of the AZO thin films. To investigate the electrical and optical properites of the AZO thin films, AZO films using ALD was controlled to be three different thicknesses (50 nm, 100 nm, and 150 nm). The structural, chemical, electrical, and optical properties of the AZO thin films were analyzed by X-ray diffraction, X-ray photoelectron spectroscopy, field-emssion scanning electron microscopy, atomic force microscopy, Hall measurement system, and UV-Vis spectrophotometry. As the thickness of the AZO thin films increased, the crystallinity of the AZO thin films gradually increased, and the surface morphology of the AZO thin films were transformed from a porous structure to a dense structure. The average surface roughnesses of the samples using atomic force microscopy were ~3.01 nm, ~2.89 nm, and ~2.44 nm, respectively. As the thickness of the AZO filmsincreased, the surface roughness decreased gradually. These results affect the electrical and optical properties of AZO thin films. Therefore, the thickest AZO thin films with 150 nm exhibited excellent resistivity (${\sim}7.00{\times}10^{-4}{\Omega}{\cdot}cm$), high transmittance (~83.2 %), and the best FOM ($5.71{\times}10^{-3}{\Omega}^{-1}$). AZO thin films fabricated using ALD may be used as a promising cadidate of TCO materials for optoelectronic applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.207-207
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• 2011

Amorphous transparent oxide semiconductors (a-TOS) have been widely studied for many optoelectronic devices such as AM-OLED (active-matrix organic light emitting diodes). Recently, Nomura et al. demonstrated high performance amorphous IGZO (In-Ga-Zn-O) TFTs.1 Despite the amorphous structure, due to the conduction band minimum (CBM) that made of spherically extended s-orbitals of the constituent metals, an a-IGZO TFT shows high mobility.2,3 But IGZO films contain high cost rare metals. Therefore, we need to investigate the alternatives. Because Aluminum has a high bond enthalpy with oxygen atom and Alumina has a high lattice energy, we try to replace Gallium with Aluminum that is high reserve low cost material. In this study, we focused on the electrical properties of IZO:Al thin films as a channel layer of TFTs. IZO:Al were deposited on unheated non-alkali glass substrates (5 cm ${\times}$ 5 cm) by magnetron co-sputtering system with two cathodes equipped with IZO target and Al target, respectively. The sintered ceramic IZO disc (3 inch ${\phi}$, 5 mm t) and metal Al target (3 inch ${\phi}$, 5 mm t) are used for deposition. The O2 gas was used as the reactive gas to control carrier concentration and mobility. Deposition was carried out under various sputtering conditions to investigate the effect of sputtering process on the characteristics of IZO:Al thin films. Correlation between sputtering factors and electronic properties of the film will be discussed in detail.

• Nuclear Engineering and Technology
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• v.52 no.1
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• pp.1-13
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• 2020

At present, the Department of Energy (DOE) in Unite State are directing the efforts of developing accident tolerant fuel (ATF) technology. As the first barrier of nuclear fuel system, the material selection of fuel rod cladding for ATFs is a basic but very significant issue for the development of this concept. The advanced cladding is attractive for providing much stronger oxidation resistance and better in-pile behavior under sever accident conditions (such as SBO, LOCA) for giving more coping time and, of course, at least an equivalent performance under normal condition. In recent years, many researches on in-plie or out-pile physical properties of some suggested cladding materials have been conducted to solve this material selection problem. Base on published literatures, this paper introduced relevant research backgrounds, objectives, research institutions and their progresses on several main potential claddings include triplex SiC, FeCrAl and MAX phase material Ti3SiC2. The physical properties of these claddings for their application in ATF area are also reviewed in thermohydraulic and mechanical view for better understanding and simulating the behaviors of these new claddings. While most of important data are available from publications, there are still many relevant properties are lacking for the evaluations.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.1
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• pp.80-85
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• 2022

ZnO-based transparent conductive films have been widely studied to achieve high performance optoelectronic devices such as next generation flexible and transparent display systems. In order to achieve a transparent flexible ZnO-based device, a low temperature growth technique using a flexible polymer substrate is required. In this work, high quality flexible ZnO films were grown on colorless polyimide substrate using atomic layer deposition (ALD). Transparent ZnO films grown from 80 to 200℃ were fabricated with a metal-semiconductor-metal structure photodetectors (PDs). As the growth temperature of ZnO film increases, the photocurrent of UV PDs increases, while the sensitivity of that decreases. In addition, it is found that the response times of the PDs become shorter as the growth temperature increases. Based on these results, we suggest that high-quality ZnO film can be grown below 200℃ in an atomic layer deposition system, and can be applied to transparent and flexible UV PDs with very fast response time and high photocurrent.

• Particle and aerosol research
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• v.19 no.2
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• pp.21-30
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• 2023

Solar cells, converting abundant solar energy into electrical energy, are considered crucial for sustainable energy generation. Recent advancements focus on nanoparticle-enhanced solar cells to overcome limitations and improve efficiency. These cells offer two potential efficiency enhancements. Firstly, plasmonic effects through nanoparticles can improve optical performance by enhancing absorption. Secondly, nanoparticles can improve charge transport and reduce recombination losses, enhancing electrical performance. However, factors like nanoparticle size, placement, and solar cell structure influence the overall performance. This study evaluates the performance of silver nanoparticles incorporated in a p-i-n structure of perovskite solar cells, generated via aerosol state by the evaporation and condensation system. The silver nanoparticles deposited between the hole transport layer and transparent electrode form nanoparticle embedded transport layer (NETL). The evaluation of the optoelectronic properties of perovskite devices using NETL demonstrates their potential for improving efficiency. The findings highlight the possibility of nanoparticle incorporation in perovskite solar cells, providing insights for sustainable energy generation.