• Journal of Korean Society of Transportation
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• v.30 no.4
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• pp.43-59
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• 2012

Assuming a completed Smart Highway road & communication environment that allows real-time information collection and transmission of road traffic condition ahead, the purpose of this study is to develop a plan for inducing a network-level safe driving pattern by providing road traffic condition and safety information to multiple drivers through a road information provision device. In this study, the device with a function that displays different colors according to the hazard level to the existing delineator has been named 'Smart Delineator'. Smart Delineator is a device that provides not only alignment information but also safety information for drivers to receive real-time warning information and intuitively recognize road traffic condition ahead so that drivers can respond. To examine the effects of safety driving inducement level on drivers, a simulation test was conducted using driving simulator as well as a satisfaction survey. The result showed that the Smart Delineator was able to identify the location of occurrence and affecting driving according pattern, either adhering to recommended speed or reducing speed according to the pre-defined hazard level.

• Journal of Korean Ophthalmic Optics Society
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• v.4 no.2
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• pp.45-49
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• 1999

The second harmonic, wavelength is 397nm, of the continuous wave diode laser, whose maximum power is 35mW, was generated in $LiIO_3$ crystals in a ring enhancement cavity. 5mm- and 10mm-long crystals cut $43.21^{\circ}$ for optic axis were used in this experiment. Both surfaces of those were anti-reflection coated for 794nm. In case the crystal was inserted into the cavity, the condition of separation between two concave mirrors for the optimum mode matching was found. The conversion efficiency of second harmonic generation was increased by the resonant enhancement of pumping power in the ring enhancement cavity, and the frequency of diode laser was locked to that of the counter-propagation mode generated from the surface of crystal. When the pumping power was 28 mW, the infrared buildup factor was about 45 without the crystal, and 14 with the crystal due to the transmission loss of crystal. The maximum second harmonic powers of $1.5{\mu}W$ and $6.6{\mu}W$ were obtained, and corresponding conversion efficiencies were $(6.584{\pm}0.56){\times}10^{-3}$%, $2.6{\pm}0.21){\times}10%{-2}$% in 5mm- and 10mm-long $LiIO_3$, respectively.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.1
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• pp.699-704
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• 2018

One-dimensional nanostructures have attracted increasing attention because of their unique electronic, optical, optoelectrical, and electrochemical properties on account of their large surface-to-volume ratio and quantum confinement effect. Vertically grown nanowires have a large surface-to-volume ratio. The vapor-liquid-solid (VLS) process has attracted considerable attention for its self-alignment capability during the growth of nanostructures. In this study, vertically aligned silicon oxide nano-pillars were grown on Si\$SiO_2$(300 nm)\Pt substrates using two-zone thermal chemical vapor deposition system via the VLS process. The morphology and crystallographic properties of the grown silicon oxide nano-pillars were investigated by field emission scanning electron microscopy and transmission electron microscopy. The diameter and length of the grown silicon oxide nano-pillars were found to be dependent on the catalyst films. The body of the silicon oxide nano-pillars exhibited an amorphous phase, which is consisted with Si and O. The head of the silicon oxide nano-pillars was a crystalline phase, which is consisted with Si, O, Pt, and Ti. The vertical alignment of the silicon oxide nano-pillars was attributed to the preferred crystalline orientation of the catalyst Pt/Ti alloy. The vertically aligned silicon oxide nano-pillars are expected to be applied as a functional nano-material.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.34 no.4
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• pp.311-316
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• 2008

In this study, we have investigated the effects of ultraviolet (UV) irradiation on the external and internal structure of human hair. For changes in morphological and chemical structure of UV-exposed hair, we utilized several microscopic techniques such as scanning electron microscope (SEM), transmission electron microscope (TEM), confocal laser scanning microscope (CLSM), and etc. The SEM showed the scales of UV-exposed hair appeared to be rough and bulkier because of chemical oxidation during UV irradiation. Small bulgy area of UV_exposed hair surface was appeared as a result of the decomposition in cysteic acid. In the TEM picture the UV-exposed hair showed the cleaved aperture of hair and destruction of melanin granules. Three dimensional topographical images were obtained by using CLSM. In the optical single section, high fluorescent intensity appeared in virgin hair. In the case of UV-exposed hair, low fluorescence intensity appeared. This means the aromatic amino acids in virgin hair were more abundant than UV-exposed hair.

• Journal of the Mineralogical Society of Korea
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• v.17 no.3
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• pp.221-233
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• 2004

Mineralogical characteristics and genesis of phlogopite in the talc deposits of the chungnam area were studied. Mica is one of the major impurity of talc ores in the study area. Talc-related micas show typical phlogopite composition, whereas talc-unrelated micas show wide compositional variations between biotite and phlogopite. Phlogopite mainly occurs in the black-wall type zone, especially in the nodular talc ores near the outer part of talc ore bodies. Interleaving textures of phlogopite and chlorite are easily observed under the optical microscope and back-scattered electron images. Interleaving textures of phlogopite and talc are observed also. Examination of the phlogopite by transmission electron microscope reveals that 14 $\AA$ layers of chlorite are randomly interlayered within the 10 $\AA$ layers of phlogopite, which suggests that the genesis of phlogopite is closely related to chlorite. Considering the occurrence and mineralogical characteristics of phlogopite, and the possible origin of K for the formation of phlogopite, phlogopite of the study area was formed by interaction between talc ore body and hydrothermal solution containing sufficient K at the late stage of talc formation. K might be introduced from the granitic gneiss at the contact zone between the talc ore body and the granitic gneiss under favorable structural condition for the potash metasomatism.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.5
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• pp.255-264
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• 2013

Cobalt aluminate ($CoAl_2O_4$) is a highly stable pigment with excellent resistance to light, weather, etc., which has resulted in widespread use as a ceramic pigment. Due to the unique optical characteristics, $CoAl_2O_4$ is generally used as a coloring agent to decorate porcelain products, glass, paints and plastics. Here, $CoAl_2O_4$ pigments were synthesized by polymerized complex method and solid state reaction. Then $CoAl_2O_4$ pigment were grinded using the attrition milling with 1 mm size zirconia ball for 3 hours. The attrition milling process was performed at the constant speed of 800 rpm and ball to powder weight ratio (BPR) was 100 : 1. The characteristics of synthesized pigment were analyzed by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), particle size analyser (PSA) and CIE $L^*a^*b^*$. The XRD patterns of $CoAl_2O_4$ show single phase spinel structure. The particle size of $CoAl_2O_4$ measured by FE-SEM, TEM and PSA analysis was in the range of 100~200 nm. The blue color of obtained $CoAl_2O_4$ pigments could be confirmed through CIE $L^*a^*b^*$ measurement.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.5
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• pp.87-103
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• 2008

In recent years, the field of THz photonics based on THz pulse technology has gained tremendous, world-wide interest as a new exciting research subject. With a possibility of many commercial applications as well as fundamental scientific achievements in the field, many advanced nations are stepping up their effort in advancing the field of THz photonics. This fact is supported by the observation of the significant increase in the number of papers on THz pulse technology presented in renowned international journals and conferences. The subject that is interesting for the THz application is the development of THz pulse sources and detectors, and other passive devices. In this paper, we present a brief review on some of the key devices and their relavant measurement techniques such as THz photoconductive antennas, optical rectification, difference frequency geneneration with quasi-phase matching structures, electro-optic sampling, high speed real time measurements, THz transmission lines, and other various waveguide structures.

• Journal of Bio-Environment Control
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• v.5 no.1
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• pp.34-42
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• 1996

This study was conducted to investigate the physical and optical properties of polypropylene and polyester thermal curtains, in which tensile strength, heat reservance and light transmission of two different materials were measured. The results from this study are as follows. 1. The tensile weight of different materials were ranged from 3.4kg to 13.4kg, according to the thickness of materials, but that no difference in the tensile strength was appeared between the two materials. The Elongation of polypropylene materials and the tensile weight and strength of polyester materials were greater than any other materials. 2. The light transmittances of two materials were ranged from 50.3% to 81.7 %, light transmittances in polypropylene were higher by 20-30%,than those in polyester. 3. The heat reservances of two materials were ranged from 18.2% to 41.2%, in which polypropylene showed better performance than polyester. 4. From the results of the test, the polypropylene thermal material was better in elongation, heat reservances and light transmittances, but polyester thermal material was better in tensile strength and light isolation than the other material.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.3
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• pp.122-126
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• 2012

The properties of Al-doped ZnO (AZO) films were investigated as a function of $H_2/(Ar+H_2)$ gas ratio using an AZO (2 wt% $Al_2O_3$) ceramic target in a radio frequency (RF) magnetron sputtering system. The deposition process was done at $200^{\circ}C$ and in $2{\times}10^{-2}$ Torr working pressure and with various ratios of $H_2/(Ar+H_2)$ gas. During the AZO film deposition process, partial $H_2$ gas affected the AZO film characteristics. The electron resistivity (${\sim}9.21{\times}10^{-4}\;{\Omega}cm$) was lowest and mobility (${\sim}17.8\;cm^2/Vs$) was highest in AZO films when the $H_2/(Ar+H_2)$ gas ratio was 2.5 %. When the $H_2/(Ar+H_2)$ gas ratio was increased above 2.5 %, the electron resistivity increased and mobility decreased with increasing $H_2/(Ar+H_2)$ gas ratio in AZO films. The carrier concentration increased with increasing $H_2/(Ar+H_2)$ gas ratio from 0 % to 7.5 %. This phenomenon was explained by reaction of hydrogen and oxygen and additional formation of oxygen vacancy. The average optical transmission in the visible light wavelength region over 90 % and an orientation of the deposition was [002] orientation for AZO films grown with all $H_2/(Ar+H_2)$ gas ratios.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.102-102
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• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).