• Journal of the Semiconductor & Display Technology
• /
• v.13 no.4
• /
• pp.65-70
• /
• 2014

This paper is to improve the problem of the LED dimming control system using the conventional PWM and DAC method. The conventional PWM method controls the average current to switch dimming signal. This method generates the flicker when controlling at a low current. In order to solve the problem, this system prevents the flicker with the DAC method. The LED is lit at micro-current flowing in the LED. And offset voltage is generated in the output of the DAC when the DAC output is very low voltage as 0V. This was resolved by the voltage drop of the output voltage to construct a negative offset circuit. In addition, the LED current can't flow as set values because of overheating of FET. In order to solve the problem, the 16 bits ADC in the microprocessor is a more accurate current control receives the LED current in comparison with the set value. Therefore, the LED dimming control system proposed in this paper showed the accurate and reliable more than conventional systems.

• Korean Journal of Optics and Photonics
• /
• v.13 no.4
• /
• pp.340-346
• /
• 2002

To understand the characteristics of the passively Q-switched Nd:YAG laser output energy with $Cr^{4+}$:YAG saturable absorbers, the transmissions of $Cr^{4+}$:YAG and the inversion population densities of Nd:YAG at the onset of Q-switch were experimentally analysed. The measured transmissions at the onset of Q-switch were 0.70$\pm$0.02 and 0.62$\pm$0.02 for the 0.48 and 0.38 of initial transmission, respectively. It means that the initial transmission loss of $Cr^{4+}$:YAG absorber is reduced in a low Q-state due to the initial absorbing effect of $Cr^{4+}$:YAG. In pumping stage, $Cr^{4+}$:YAG has absorbing processes due to the fluorescence and amplified spontaneous emissions of the Nd:YAG even if there is no laser oscillation. The minimum population inversion densities for Qswitch were approximately 3.7${\times}{10^{17}}$ and 4.0${\times}{10^{17}}$ $cm^{-3}$, respectively. At the beginning of Q-switch, the number density of $Cr^{4+}$ions in the ground state of $Cr^{4+}$:YAG was approximately 1.4${\times}{10^{17}}$ $cm^{-3}$ and the ratio of the ground to the excited state of absorbing $Cr^{4+}$ions was 0.44 both. The modified theoretical output energies with the initial absorbing effect were 18 and 18.5 mJ. The measured output energies were 17$\pm$1 and 18$\pm$1.5 mJ, respectively. The quantum extraction efficiencies of Q-switch were 0.32 both. The theoretical Q-switched output results with the initial absorbing effect of the saturable absorber are a good agreement with the experimental results.

• Journal of the Korean Electrochemical Society
• /
• v.2 no.1
• /
• pp.17-22
• /
• 1999

Since the use of porous silicon for microsensors and microactuators is in the euly stage of study, only several application devices, such as light-emitting diodes and chemical sensors have so far been demonstrated. In this paper we present an overview of the present status of porous silicon sensors and actuators research with special emphasis on the applications of chemical sensors and optical devices. The capacitive type porous silicon humidity sensors had a nonlinear capacitance-humidity characteristic and a good sensitivity at higher humidity above $40\%RH$. The porous silicon $n^+-p-n^+$ device showed a sharp increase in current when exposed to an ethanol vapor. The $p^+-PSi-n^+$ diode fabricated on porous silicon diaphragm exhibited an optical switching characteristic, opening up its utility as an optical sensor or switch. The photoluminescence (PL) spectrum, taken from porous silicon under 365 nm excitation, had a broad emission, peaked at -610 nm. The electroluminescence(EL) from ITO/PSi/In LED had a broader spectrum with a blue shifted peak at around 535nm than that of the PL.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.2
• /
• pp.193-204
• /
• 1998

The single crystal of the $LiTaO_3$has large electro-optic effects, so it is applied to optical switch, acousto-optic deflector, and optical memory device as hologram using photorefractive effect. In this study, optic-grade undoped $LiTaO_3$and Fe:LiTaO$LiTaO_3$single crystals were grown by the Czochralski method and optical transmission and absorption spectrums were measured in the wavelength of UV-VIS range. The curie temperature was determined with DSC and by measuring capacitance for the grown undoped crystal and ceramic powder samples of various Li/Ta ratio. In case of having a 48.6 mol% $Li_2O$ as a starting Li/Ta ratio, the results of concentration variations were below 0.01 mol% $Li_2O$ all over the crystal, so it was confirmed that $LiTaO_3$single crystals were grown under congruent melting composition having optical homogeneity. The curie temperature of the Fe:$LiTaO_3$crystal was increased with increased with increased doped Fe concentrations;by the ratio of $7.5^{\circ}C$ increase per Fe 0.1 wt%. Also, the optical transmittance was about 78 %, which was sufficient for optical device.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.343-344
• /
• 2012

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. [1-3] We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• 한국HCI학회:학술대회논문집
• /
• 2009.02a
• /
• pp.52-55
• /
• 2009

With the recent development of virtual reality, it has been actively investigated to develop user interfaces for immersive interaction. Immersive user interfaces improve the efficiency and the capability of information processing in the virtual environment providing various services, and provide effective interaction in the field of ubiquitous and mobile computing. In this paper, we propose an virtual reality platform "My Workspace" which renders an 3D virtual workspace by using an immersive user interface. We develop an interface that integrates an optical see-through head-mounted display, a Wii remote controller, and a helmet with infrared LEDs. It estimates the user's gaze direction in terms of horizontal and vertical angles based on the model of head movements. My Workspace expands the current 2D workspace based on monitors into the layered 3D workspace, and renders a part of 3D virtual workspace corresponding to the gaze direction. The user can arrange various tasks on the virtual workspace and switch each task by moving his head. In this paper, we will also verify the performance of the immersive user interface as well as its usefulness with the usability test.

• Korean Journal of Optics and Photonics
• /
• v.15 no.2
• /
• pp.109-113
• /
• 2004

We have manufactured and characterized the fiber-to-Planar Waveguide Coupler for analysis of the photo-induced refractive index change of DM-BTE .(l,2-bis[2,5-dimethylthio-phen-3-yl]-hexafluorocyclopentene) When irradiated with ultraviolet light, the colorless diarylethene(DM-BTE)-crystal turned red while keeping the crystal shape. The red color was bleached by irradiation with visible light(λ＞450 nm). The resonant wavelength was shifted and recovered owing to the refractive index variation of the planar waveguide because of its photo-functional properties on exposure to UV and visible light. The wavelength responses of this switch by UV exposure were measured as 0.057 nm/sec with saturation time of 60 seconds. and when illuminated by visible light, resonance wavelength variations were measured as 0.028 nm/sec, with recovery time of 140 seconds.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.18 no.11
• /
• pp.1689-1700
• /
• 1993

WDM(Wavelength Division Multiplexing) based-on fixed wavelengths is a new means of utilizing the bandwidth of optical fibers. In this Paper, an improved virtual topology called "(a, $\beta$,${\gamma}$) ShuffleNet " is introdced for designing large-scale WDM switches. The proposed one is an architecture created by vertically stacking x planes of a ($\beta$,${\gamma}$) ShuffleNet in parallel via $\beta$r nodes called "bridge nodes" so that N-by-N(N=(x*$\beta$${\gamma}$*${\gamma}$) switching is achieved based on the self-routing algorithm for each ($\beta$,${\gamma}$) ShuffleNet. With the topological parallelism, in contrast to the conventional virtual topologies, the diameter of 2${\gamma}$ hops can be fixed and high utilization and performance are provided while N increases. Such a scalability characteristic allows to design a growable broadband switch. As for the delay, we show that the traffic locality, due to the topological feature. result in low delay characteristics.lay characteristics.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.326-326
• /
• 2014

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states [1-3]. We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• Korean Journal of Optics and Photonics
• /
• v.6 no.4
• /
• pp.331-336
• /
• 1995

The steady-state absorption saturation of the photodarkend SDG was investigated. The absorption saturation intensity was observed to increase for the photodarkened sample. The diffraction efficiency of the permanent grating due to photodarkening was also measured using the backward DFWM technique. For the low backward pump intensity, the diffraction efficiency was proportional to the intensity of the pump beam. The origin of increasing diffraction efficiency is attributed to the difference in absorption between the permanent gratings created by photodarkening. ening.