• Journal of Sensor Science and Technology
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• v.15 no.2
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• pp.112-119
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• 2006

Resolution of an image sensor is very significant parameter to improve. It is hard to improve the resolution of the CMOS vision chip for edge detection based on a biological retina using a resistive network because the vision chip contains additional circuits such as a resistive network and some processing circuits comparing with general image sensors such as CMOS image sensor (CIS). In this paper, we proved the problem of low resolution by separating photo-sensing and signal processing circuits. This type of vision chips occurs a problem of low operation speed because the signal processing circuits should be commonly used in a row of the photo-sensors. The low speed problem of operation was proved by using a reset decoder. A vision chip for edge detection with $128{\times}128$ pixel array has been designed and fabricated by using $0.35{\mu}m$ 2-poly 4-metal CMOS technology. The fabricated chip was integrated with optical lens as a camera system and investigated with real image. By using this chip, we could achieved sufficient edge images for real application.

• Journal of IKEEE
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• v.3 no.1 s.4
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• pp.133-140
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• 1999

When the current optical communication system is used for the DWDM, it raise the serious interference because an interval between the adjacent channels is narrow. The FBG filter for the DWDM is able to reduce the interferences between the adjacent channels. In this paper, therefore, we find the reflection spectrums for the three types of induced index changes, that is, uniform, Gaussian apodized, and raised-cosine apodized. From the obtained results in this paper, we can see that uniform FBG does not fit, and that the smaller the maximum induced index change ${\sigma}$ is and the larger the value of parameter C in the raised-cosine apodized FBG and G in the Gaussian apodized FBG are, the fitter they are on the narrow filter for DWDM. But, we can also see that the raised-cosine apodized FBG has more excellent property than the Gaussian apodized FBG because it has the narrower maximum reflection spectrum band and the lower sidelobes than the other.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.212-216
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• 1999

SiC(3C) photodiodes (PDs) were fabricated on p-type Si(111) substrates using chemical vapor deposition (CVD) technique by pyrolyzing tetramethylsilane (TMS) with $H_{2}$ carrier gas. Electrical properties of SiC(3C) were investigated by Hall measurement and current-voltage (I-V) characteristics. SiC(3C) layers exhibited n-type conductivity. Ohmic contact was formed by thermal evaporation Al metal through a shadow-mask. The optical gain $(G_{op})$ of the SiC(3C)/Si PD was measured as a function of the incident wavelength. For the analysis of the photovoltaic detection of the Sic(3C) n/p PD, the spectral response (SR) has calculated by using the electrical parameters of the SiC(3C) layer and the geometric structure of the PD. The peak response calculated for properly chosen parameters was about 0.75 near 550 nm. We expect a good photoresponse in the SiC(3C) heterostructure for the wavelength range of 400~600 nm. The SiC(3C) photodiode can detect blue and near ultraviolet (UV) radiation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.1
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• pp.1-7
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• 2016

RE : YAG ($RE=Nd^{3+}$, $Er^{3+}$) single crystals are laser diodes and generally grown by Czochralski method with controlling the various growth parameter. Since the defects occurred by temperature gradient or the rotation speed of solid-liquid growth interface act as the decline of crystal optical property during the growth procedure, crystalline quality improvement via defects analysis is necessary. The etch pit density (EPD) analysis was used to confirm the surface defect of grown RE : YAG single crystal and to select the area of transmission electron microscopy (TEM) analysis. Defects in the specimen produced by tripod polishing method such as buckling, rod shaped, bend contours by internal stress, segregation and others were observed by using 200 kV TEM and 300 kV FE-TEM.

• Journal of the Korea institute for structural maintenance and inspection
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• v.23 no.7
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• pp.40-48
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• 2019

New concept of fine dust measurement method is suggested based on ultrasonic scattering. These days, fine dust has been social problem in Korea, and many researches has been conducted including the area structural maintenance. Conventional measurement system such as optical scattering and semiconductor has a limit from environmental factors like relative humidity. However, ultrasound is based on mechanical waves, which perturb mechanical properties of medium such as density and elastic constants. Using the advantage, the algorithm for fine dust measurement is derived and evaluated using 2-D finite difference method. The numerical analysis simulates ultrasonic wave propagation inside multiple scattering medium like fine dust in air. Signal processing scheme is also suggested and the results show that the error of the algorithm is around minimum of 0.7 and maximum of 24.9 in the number density unit. It is shown that cross-section of fine dust is a key parameter to improve the accuracy of algorithm.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.231.1-231.1
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• 2015

Surface energy, being an important material parameter to control its interactions with the other surfaces plays a key role in bio-related application. Carbon films are found very promising due to their characteristics such as wear and corrosion resistant, high hardness, inert, low resistivity and biocompatibility. The present work deals with the deposition of carbon films using unbalanced facing target magnetron sputtering technique. The discharge characteristics were studied using optical emission spectroscopy and correlated with the film properties. Surface energy was investigated through contact angle measurement. The ID/IG ratio as calculated from Raman spectroscopy data increases with the increase in power density due to the higher number of sp2 clusters embedded in the amorphous matrix. The deposited films were smooth and homogeneous as observed by Atomic force microscopy having RMS roughness in the range of 1.74 to 2.25 nm. It is observed that electrical resistivity and surface energy varies in direct proportionality with operating pressure and has inverse relation with power density. The surface energy results clearly exhibited that these films can have promising applications in cell cultivation.

• Polymer(Korea)
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• v.27 no.4
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• pp.293-298
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• 2003

The development of the crystalline structure of poly(trimethylene terephthalate) (PTT) in a confined geometry was investigated with optical microscope, small angle light scattering, and X-ray diffraction. The rejected distance, which was represented in terms of the parameter $\delta$, played an important role in determining the morphological patterns of poly (ethylene terethphalate) (PET/PTT) blend. In case of stepwise crystallization, the crystallization of PTT commenced in the interspherulitic region between the grown PET crystals and proceeded until the interspherulitic space was filled with the PTT crystals. The spherulitic surface of the PET crtstals acted as the nucleation sites where the PTT molecules preferentially crystallized, leading to the formation of transcrystalline structure. As a result, a mixed morphological pattern was observed in the PTT-rich phase: one was a typical spherulitic texture and the other was a transcrystalline texture. Some of the molecular conformations of PTT, which could adopt in the absence of the space limitation, were probably forbidden in the interlamellar and/or interfibrillar regions of the PET spherulite. This constraint was responsible for difference in the crystallization and melting behavior of PTT between the intra and interspheulitic regions of PET.

• Korean Journal of Optics and Photonics
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• v.14 no.4
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• pp.429-433
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• 2003

We try to analyse the localization phenomenon of a lightwave in random media by means of considering the solution of the propagation equation on a transmission line in which the propagation constants are randomly distributed. Lightwave localization is generated at the turning point where the solution is changed suddenly from an increase to a decrease. First, in order to investigate the changing process of the solution, we have derived the approximated one-dimensional Schrodinger equation from the two-dimensional wave equation by using the Brags condition. Considering the many types of solutions of the wave equation, we have investigated the conditions that allow the solutions to exist. Also, we have investigated the relationships between the localization of the solution and the variation of the propagation constant. In case of the exponential solution, we know that the permittivity $\varepsilon$=(0,0$\varepsilon$$_{0}$) is a very important parameter to influence the phase of the lightwave and to generate the localization.

• Korean Journal of Optics and Photonics
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• v.7 no.3
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• pp.196-199
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• 1996

The amplitude LSF(Line spread function, $C_1e^{{o^2}{x^2}}$ or amplitude impulse) of the Gaussian apodized annular pupil is found to be same to that of the full aperture LSF($C_0e^{{o^2}{x^2}}$). $C_0$ and $C_1$ depending on $\sigma$, ${\omega}_0=\frac{2{\pi}}{\lambda}\;\frac{a_0}{l}$ and ${\omega}_0'=\frac{2{\pi}}{\lambda}\;\frac{a_0'}{l}$ which are the geometric parameter and pupil coordinates of the annular pupil. The important inequality relation among ${\omega}_0,\;{\omega}_0'$, a (fraction of diffraction amplitude) and $\sigma$ is obtained. It is $\frac{{\omega}_0}{\sqrt{2}}<{\sigma}{\le}(\frac{1-a}{2a})^{1/2}\;{\omega}_0$, and in the case of $a=e^{-1},\;a_0'{\le}0.34a_0$. The case of λ=0.013${\mu}{\textrm}{m}$, l=20 cm, $a_0=5cm$ and $a_0=0.34a_0=1.7cm$ give a Gaussian apodized superresolution ${\Delta}=\frac{\sqrt{log2}}{\sigma}=0.008{\mu}m$ annular pupil with the intensity signal equal to $e_{-2}$ times the signal obtainable by using the full aperture system(a=1)

• Journal of The Korean Astronomical Society
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• v.25 no.1
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• pp.23-46
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• 1992

The electrical, mechanical and optical capabilities have been tested of the microdensitometer PDS 1010GMS at the Korea Astronomy Observatory. The highest stage of scan speed 255 csu (conventional speed unit) is measured to be 47 mm/s. At this speed the position is displaced by $4{\mu}m$ to the direction of scanning and the density is underestimated by $0.4{\sim}0.7D$. Standard deviation in the measured density is proportional to $A^{-0.46}$, where A is the area of scan aperture. The accuracy of position repeatability is ${\pm}1{\mu}m$, and that of density repeatability is ${\pm}(0.003{\sim}0.03)D$. Callier coefficient is determined to be 1.37; the semispecular density is directly proportional to the diffuse density up to 3.5D. Because the logarithmic amplifier has a finite response time, the densities measured at high scan speeds are underestimated to the degree that speeds higher than 200 csu are inadequate for making an accurate astronomical photometry. After power is on, an about 5 hour period of warming is required to stabilize the system electrically and mechanically as well. On the basis of this performance test, we have determined the followings as the optimum scan parameters for the astronomical photometry: For the scan aperture $10\;\sim\;20{\mu}m$ is optimal, and for the scan speed. $20\;{\sim}\;50$ csu is appropriate. These parameter values are chosen in such a way that they may keep the density repeatability within ${\pm}0.01D$, the position displacement under $1{\mu}m$, and the density underestimation below 0.1D even in high density regions.