• Korean Journal of Agricultural and Forest Meteorology
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• v.21 no.4
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• pp.261-268
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• 2019

Climate change and drought stress are having profound impacts on crop growth and development by altering crop physiological processes including photosynthetic activity. But finding a rapid, efficient, and non-destructive method for estimating environmental stress responses in the leaf and canopy is still a difficult issue for remote sensing research. We compared the relationships between photochemical reflectance index(PRI) and various optical and experimental indices on soybean drought stress under climate change conditions. Canopy photosynthesis trait, biomass change, chlorophyll fluorescence(Fv/Fm), stomatal conductance showed significant correlations with midday PRI value across the drought stress period under various climate conditions. In high temperature treatment, PRI were more sensitive to enhanced drought stress, demonstrating the negative effect of the high temperature on the drought stress. But high CO₂ concentration alleviated the midday depression of both photosynthesis and PRI. Although air temperature and CO₂ concentration could affect PRI interpretation and assessment of canopy radiation use efficiency(RUE), PRI was significantly correlated with canopy RUE both under climate change and drought stress conditions, indicating the applicability of PRI for tracking the drought stress responses in soybean. However, it is necessary to develop an integrated model for stress diagnosis using PRI at canopy level by minimizing the influence of physical and physiological factors on PRI and incorporating the effects of other vegetation indices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.440-443
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• 2002

Present1y the X-Ray diagnosis system is a real condition that is changing by digital ways in it's existent analog ways. This digital radiation detector is divided by the direct method and the indirect method. The indirect method of applied voltage has special qualities that the resolution is low than direct method by diffusion effect that happens. The conversion process ( radiation${\rightarrow}$visible ray${\rightarrow}$electrical signal of two times, has shortcomings that the energy conversion efficiency of electrical signal is low. The direct method has shortcomings that need strong electric fie1d to detect electrical signal efficiently. This research achieved to develop digital detector of the Hybrid method that have form that mixes two ways to supplement shortcoming of direct. indirect method. A studied electrical characteristic by Iodine's Mixture ratio change is added to selenium in the detector which has a multi-layer structure (Oxybromide + a-Se). There are 8 kinds of Manufactured compositions to amorphous selenium Iodine each 30ppm, 100ppm, 200 ppm, 300ppm, 400ppm, 500ppm, 600ppm, 700ppm by a doped photoconductor through a vacuum thermal evaporation method. The phosphor layer is consisted of Oxybromide ($BrO_2$) which uses optical adhesives multi-layer structure. The manufactured compositions calculates and compares Net Charge and signal to noise ratio measuring Photocurrent about Darkcurrent and X-ray. When doped Iodine Mixture ratio is 500ppm to the multi-layer structure (Oxybromide + a-Se), applied voltage of $3V/{\mu}m$, leakage current of compositions $2.61nA/cm^2$ and net charge value by 764pC/$cm^2$/mR then the best result appeared.

• Korean Journal of Optics and Photonics
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• v.10 no.2
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• pp.89-94
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• 1999

The 1.54 ${\mu}{\textrm}{m}$ forward and backward stimulated Raman scattering (SRS) have been studied in CH$_4$pumped by 1.06 ${\mu}{\textrm}{m}$ Nd:YAG laser. The forward and backward SRS output energy in a single pass were measured at dufferent CH$_4$pressures. Under steady state conditions, the pump input threshold energies and Raman gains in forward and backward directions were for Raman conversion at various CH$_4$pressures for a tight focusing geometry. The forward and backward slope efficiency for Raman conversion were 18% and 34% respectively. The pump input threshold energy of the backward SRS was lower than that of the forward. In backward SRS, the experimental input laser threshold and Raman gain values were in good agreement with the calculated values at different pressures of CH$_4$. The retio of the backward to the forward SRS gain was appoximately 1.4 times above 1200 psi. We obtained that the backward Raman gain coefficient was 0.32 cm/GW, and the forward Raman gain coefficient 0.23cm/GW at 1400 psi. Asymmetry of the forward and backward Raman gain is caused by the interaction between different pump intensities of each direction duting the amplification of the Stokers. The backward Raman gain is proportional to the average pump intensity. However, the forward SRS output grows by depleting the local pump intensity.

• Korean Journal of Optics and Photonics
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• v.31 no.3
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• pp.142-147
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• 2020

In this paper, we report highly efficient second harmonic generation of continuous-wave Yb fiber lasers incorporating a periodically poled LiTaO₃ device (MgO:PPSLT) as a frequency converter. The seed laser output from a Yb fiber master oscillator using a Fabry-Perot feedback cavity was amplified in a Yb fiber amplifier stage, yielding 28.5 W of linearly polarized output at 1064 nm in a beam with beam quality, M², of ~1.07. Second harmonic generation was achieved by passing the laser beam through MgO:PPSLT. Under optimized conditions, we obtained 11.1 W of green laser output at 532 nm for an incident signal power of 25.0 W at 1064 nm, corresponding to a conversion efficiency of 44.4%. The detailed investigation to find the optimized operating conditions and prospects for further improvement are discussed.

• Korean Journal of Optics and Photonics
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• v.18 no.6
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• pp.383-388
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• 2007

A color filter was demonstrated incorporating a patterned metal grating in a quartz substrate. The filter is created in a metal layer perforated with a symmetric two-dimensional array of circular holes, with the pitch smaller than the wavelength of the visible light. A finite-difference time-domain simulation was performed to analyze the device by investigating the effect of structural parameters like the grating height, the period, the hole size, and the refractive index of the hole-filling material on its performance. The device performance was especially optimized by controlling the refractive index of the material comprising the holes of the grating. And two different devices were fabricated by means of the e-beam direct writing with the following design parameters: the grating height of 50 nm, the two pitches of 340 nm for the red color and 260 nm for the green color. For the prepared device with the period of 340 nm, the center wavelength was 680 nm and the peak transmission 57%. And for the other device with the pitch of 260 nm, the center wavelength was 550 nm and the peak transmission was 50%. The filling of the hole with a material whose refractive index is matched to that of the substrate has led to an increase of ${\sim}15%$ in the transmission efficiency.

• Bulletin of the Korean Chemical Society
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• v.35 no.2
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• pp.505-512
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• 2014

A new donor-accepter-donor-accepter-donor (D-A-D-A-D) type 2,1,3-benzothiadiazole-thiophene-based acceptor unit 2,5-di(4-(5-bromo-4-octylthiophen-2-yl)-2,1,3-benzothiadiazol-7-yl)thiophene ($DTBTTBr_2$) was synthesized. Copolymerized with fluorene and indeno[1,2-b]fluorene electron-rich moieties, two alternating narrow band gap (NBG) copolymers PF-DTBTT and PIF-DTBTT were prepared. And two copolymers exhibit broad and strong absorption in the range of 300-700 nm with optical band gap of about 1.75 eV. The highest occupied molecular orbital (HOMO) energy levels vary between -5.43 and -5.52 eV and the lowest unoccupied molecular orbital (LUMO) energy levels range from -3.64 to -3.77 eV. Potential applications of the copolymers as electron donor material and $PC_{71}BM$ ([6,6]-phenyl-$C_{71}$ butyric acid methyl ester) as electron acceptors were investigated for photovoltaic solar cells (PSCs). Photovoltaic performances based on the blend of PF-DTBTT/$PC_{71}BM$ (w:w; 1:2) and PIF-DTBTT/$PC_{71}BM$ (w:w; 1:2) with devices configuration as ITO/PEDOT: PSS/blend/Ca/Al, show an incident photon-to-current conversion efficiency (IPCE) of 2.34% and 2.56% with the open circuit voltage ($V_{oc}$) of 0.87 V and 0.90 V, short circuit current density ($J_{sc}$) of $6.02mA/cm^2$ and $6.12mA/cm^2$ under an AM1.5 simulator ($100mA/cm^2$). The photocurrent responses exhibit the onset wavelength extending up to 720 nm. These results indicate that the resulted narrow band gap copolymers are viable electron donor materials for polymer solar cells.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.73-79
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• 2013

Crystalline silicon solar cells with $SiN_x/SiN_x$ and $SiN_x/SiO_x$ double layer anti-reflection coatings(ARC) were studied in this paper. Optimizing passivation effect and optical properties of $SiN_x$ and $SiO_x$ layer deposited by PECVD was performed prior to double layer application. When the refractive index (n) of silicon nitride was varied in range of 1.9~2.3, silicon wafer deposited with silicon nitride layer of 80 nm thickness and n= 2.2 showed the effective lifetime of $1,370{\mu}m$. Silicon nitride with n= 1.9 had the smallest extinction coefficient among these conditions. Silicon oxide layer with 110 nm thickness and n= 1.46 showed the extinction coefficient spectrum near to zero in the 300~1,100 nm region, similar to silicon nitride with n= 1.9. Thus silicon nitride with n= 1.9 and silicon oxide with n= 1.46 would be proper as the upper ARC layer with low extinction coefficient, and silicon nitride with n=2.2 as the lower layer with good passivation effect. As a result, the double layer AR coated silicon wafer showed lower surface reflection and so more light absorption, compared with $SiN_x$ single layer. With the completed solar cell with $SiN_x/SiN_x$ of n= 2.2/1.9 and $SiN_x/SiO_x$ of n= 2.2/1.46, the electrical characteristics was improved as ${\Delta}V_{oc}$= 3.7 mV, ${\Delta}_{sc}=0.11mA/cm^2$ and ${\Delta}V_{oc}$=5.2 mV, ${\Delta}J_{sc}=0.23mA/cm^2$, respectively. It led to the efficiency improvement as 0.1% and 0.23%.

• Clean Technology
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• v.20 no.4
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• pp.415-424
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• 2014

In this study, two kinds of polymer (PPQX-2hdPTZ (P1), POPQX-2hdPTZ (P2)) were synthesised by Suzuki coupling reaction based on phenothiazine derivative as electron-donor and quinoxaline derivative as electron-acceptor. Microwave synthesis workstation was used to shorten the polymerization time and increase the degree of polymerization. The physical, thermal stability, optical and electrochemical properties of the synthesized polymer were confirmed. The thermal stability of two polymers was outstanding as the initial decomposition temperature was $323-328^{\circ}C$. And additional substituted alkoxy chain on P2 showed higher degree of polymerization. An analysis of electrochemical properties, all polymer had similar HOMO energy level values. Device was fabricated by ITO/PEDOT:PSS/active layer/$BaF_2$/Al structure and photovoltaic properties were confirmed. Each device has a different film thickness and the resulting change in PCE was confirmed. As a result the thinner thickness of the film showed a high efficiency ($PCE_{max}:P1=1.0%$, P2 = 1.1%).

• Korean Journal of Optics and Photonics
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• v.25 no.4
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• pp.216-220
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• 2014

We have synthesized a $CaMgSi_2O_6:Eu^{2+}$ blue phosphor via a solid-state reaction method. The $CaMgSi_2O_6:Eu^{2+}$ phosphor has monoclinic structure with a space group of C2/c (15), and an emission band peaking at 450 nm (blue) due to the $4f^7-4f^65d$ transition of the $Eu^{2+}ion$. The emission intensity at $100^{\circ}C$ is 54% of the value at room temperature. A white LED was fabricated by integrating a UV LED (400 nm) with our blue phosphor plus two commercial green and red phosphors. The white LED shows a color temperature of 3500 K with a color rendering index of 87 (x = 0.3936, y = 0.3605), and a luminous efficiency of 18 lm/W. The white LED shows a luminance maintenance of 97% after operation at 350 mA for 400 hours at $85^{\circ}C$.

• Korean Journal of Optics and Photonics
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• v.4 no.1
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• pp.15-21
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• 1993

This paper describes the design and development of a KrF excimer laser stepper and discusses the detailed system parameters and characterization data obtained from the performance test. We have developed a deep UV step-and-repeat system, operating at 248 nm, by retrofitting a commercial modules such as KrF excimer laser, precision wafer stage and fused silica illumination and 5X projection optics of numerical aperture 0.42. What we have developed, to the basic structure, are wafer alignment optics, reticle alignment system, autofocusing/leveling mechanisms and environment chamber. Finally, all these subsystem were integrated under the control of microprocessor-based controllers and computer. The wafer alignment system comprises the OFF-AXIS and the TTL alignment. The OFF-AXIS alignment system was realized with two kinds of optics. One is the magnification system with the image processing technique and the other is He-Ne laser diffraction type system using the alignment grating on the wafer. 'The TTL alignment system employs a dual beam inteferometric method, which takes advantages of higher diffraction efficiency compared with other TTL type alignment systems. As the results, alignment accuracy for OFF-AXIS and TTL alignment system were obtained within 0.1 $\mu\textrm{m}$/ 3 $\sigma$ for the various substrate on the wafers. The wafer focusing and leveling system is modified version of the conventional systems using position sensitive detectors (PSD). This type of detection method showed focusing and leveling accuracies of about $\pm$ 0.1 $\mu\textrm{m}$ and $\pm$ 0.5 arcsec, respectively. From the CD measurement, we obtained 0.4 $\mu\textrm{m}$ resolution features over the full field with routine use, and 0.3 $\mu\textrm{m}$ resolution was attainable under more strict conditions.