• Current Optics and Photonics
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• v.5 no.3
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• pp.213-219
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• 2021

We describe a single-channel rubidium (Rb) radio-frequency atomic magnetometer (RFAM) as a receiver that takes magnetic signal resonating with Zeeman splitting of the ground state of Rb. We optimize the performance of the RFAM by recording the response signal and signal-to-noise ratio (SNR) in various parameters and obtain a noise level of 159 $fT{\sqrt{Hz}}$ around 30 kHz. When a resonant radiofrequency magnetic field with a peak amplitude of 8.0 nT is applied, the bandwidth and signal-to-noise ratio are about 650 Hz and 88 dB, respectively. It is a good agreement that RFAM using alkali atoms is suitable for receiving signals in the very low frequency (VLF) carrier band, ranging from 3 kHz to 30 kHz. This study shows the new capabilities of the RFAM in communications applications based on magnetic signals with the VLF carrier band. Such communication can be expected to expand the communication space by overcoming obstacles through the high magnetic sensitive RFAM.

• Current Optics and Photonics
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• v.5 no.3
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• pp.243-249
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• 2021

In this paper, the sensing characteristics of a double cladding fiber (DCF) long-period fiber grating (LPFG) to the surrounding refractive index (SRI) are studied. The outer cladding of the DCF plays the role of the overlay, thus, the mode transition (MT) phenomenon of DCF can be induced by etching the outer cladding radius instead of coating overlays. The response characteristics of the effective refractive index (ERI) of the cladding mode to the outer cladding radius are analyzed. It is found that in the MT range, the change rate of ERIs of cladding modes is relatively larger than that for other ranges. Further, based on the features of the mode transition region (MTR), the phase-matching curve of the 11^th cladding mode is investigated, and the response of the DCF-LPFG to the SRI is characterized by the change of wavelength intervals between the dual peaks under different outer cladding radii. The numerical simulation results show that the SRI sensitivity is greatly improved, which is available to 3484.0 nm/RIU with the fitting degree 0.998 in the SRI range of 1.33-1.37. The proposed DCF-LPFG can provide new theoretical support for designing the DCF-LPFG refractive index sensor with excellent performances of sensitivity, linearity and structure.

• Journal of Sensor Science and Technology
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• v.31 no.3
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• pp.151-155
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• 2022

In this paper, we present a highly-sensitive gate/body-tied (GBT) metal-oxide semiconductor field-effect transistor (MOSFET)-type photodetector using multi-finger structure whose photocurrent increases in proportion to the number of fingers. The drain current that flows through a MOSFET using multi-finger structure is proportional to the number of fingers. This study intends to confirm that the photocurrent of a GBT MOSFET-type photodetector that uses the proposed multi-finger structure is larger than the photocurrent per unit area of the existing GBT MOSFET-type photodetectors. Analysis and measurement of a GBT MOSFET-type photodetector that utilizes a multi-finger structure confirmed that photocurrent increases in ratio to the number of fingers. In addition, the characteristics of the photocurrent in relation to the optical power were measured. In order to determine the influence of the incident the wavelength of light, the photocurrent was recorded as the incident the wavelength of light varied over a range of 405 to 980 nm. A highly-sensitive GBT MOSFET-type photodetector with multi-finger structure was designed and fabricated by using the Taiwan semiconductor manufacturing company (TSMC) complementary metal-oxide-semiconductor (CMOS) 0.18 um 1-poly 6-metal process and its characteristics have been measured.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.47 no.6
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• pp.107-116
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• 2010

Smear is a phenomenon that occurs when an extremely strong light source appears in the imaging system with CCD sensor. It occurs due to the signal charge transfer of CCD and appears as bright lines of noise emanating vertically (or horizontally) from the light source. For still images, smear can be reduced by using a mechanical shutter or special drive methods, but these techniques cannot be applied to image sequences. In this paper, we propose a smear removal method that can be applied to imaging systems for not only still images but also image sequences. The proposed method uses the optical black region(OBR) which is a group of pixels located in the boundary of CCD imaging sensors. Although the OBR is not exposed to light, it contains smear information caused by the charge transport. First, noise and the smear signal in the OBR is separated, and noise is removed to correctly estimate smear effect. Then, corrected OBR signal is uniformly subtracted to eliminate smear effect. Also, if saturation is occurred, the current pixel is substituted by weighted summation of neighboring pixels to improve the visual degradation. Experimental results show that the proposed algorithm outperforms the conventional methods.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.268-268
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• 2016

Chemical sensors have attracted much attention due to their various applications such as agriculture product, cosmetic and pharmaceutical components and clinical control. A conventional chemical and biological sensor is consists of fluorescent dye, optical light sources, and photodetector to quantify the extent of concentration. Such complicated system leads to rising cost and slow response time. Until now, the most contemporary thin film transistors (TFTs) are used in the field of flat panel display technology for switching device. Some papers have reported that an interesting alternative to flat panel display technology is chemical sensor technology. Recent advances in chemical detection study for using TFTs, benefits from overwhelming progress made in organic thin film transistors (OTFTs) electronic, have been studied alternative to current optical detection system. However numerous problems still remain especially the long-term stability and lack of reliability. On the other hand, the utilization of metal oxide transistor technology in chemical sensors is substantially promising owing to many advantages such as outstanding electrical performance, flexible device, and transparency. The top-gate structure transistor indicated long-term atmosphere stability and reliability because insulator layer is deposited on the top of semiconductor layer, as an effective mechanical and chemical protection. We report on the fabrication of InGaZnO TFTs with silver nanowire as the top gate electrode for the aim of chemical materials detection by monitoring change of electrical properties. We demonstrated that the improved sensitivity characteristics are related to the employment of a unique combination of nano materials. The silver nanowire top-gate InGaZnO TFTs used in this study features the following advantages: i) high sensitivity, ii) long-term stability in atmosphere and buffer solution iii) no necessary additional electrode and iv) simple fabrication process by spray.

• Journal of Satellite, Information and Communications
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• v.10 no.4
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• pp.117-127
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• 2015

Recently, research and development on satellite payloads are being developed such as the optical sensor, SAR etc. Satellite image for earth observation is being utilized both domestically and abroad. Advanced satellite payload technology has led to the collection and analysis of satellite images relying on the optical sensor. Currently, related organizations such as RDA(the Rural Development Administration) are collectively collaborating to plan a national project to develop a medium-sized satellite based on Korea's domestic technology independently. This paper investigated the cases of the past research on application of satellite images for agriculture and analyzed the technical specifications for satellite payload in each area of such application. Based on the results of the past surveys and consultation studies among local experts in satellite image application, we analyzed the current trends, plans and applications of domestic and overseas R&D in satellite payloads for earth observation in agriculture, and proposed the appropriate technical specifications for developing a future medium-sized satellite for agriculture. The proposed specifications were then incorporated into a simulated satellite to examine its performance to observe the Korean farming areas. The authors anticipate that the findings of this paper will form a useful technical basis for providing the appropriate specifications for developing future medium-sized satellite payloads to be used in agriculture and forestry, and enabling the end users to efficiently utilize the satellite.

• Journal of Sensor Science and Technology
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• v.12 no.2
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• pp.66-71
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• 2003

Pt/AlGaN Schottky-type UV photodetectors were designed and fabricated. A low-temperature AlGaN interlayer buffer was grown between the AlGaN and GaN film in the diode structure epitaxy to obtain crack-free AlGaN active layers. A comparison was then made of the structural, electrical, and optical characteristics of two different diodes: one with an AlGaN($0.5\;{\mu}m$)/n+-GaN(2 nm) structure (type 1) and the other with an AlGaN($0.5\;{\mu}m$)/AlGaN interlayer($150\;{\AA}$)/n+-GaN($3\;{\mu}m$) structure(type 2). A crack-free AlGaN film was obtained by the insertion of a low-temperature AlGaN interlayer with an aluminum mole fraction of 26% into the $Al_xGa_{1-x}N$ layer. The fabricated Pt/$Al_{0.33}Ga_{0.67}N$ photodetector had a leakage current of 1 nA for the type 1 diode and $0.1\;{\mu}A$ for the type 2 diode at a reverse bias of -5 V. For the photoresponse measurement, the type 2 diode exhibited a cut-off wavelength of 300 nm, prominent responsivity of 0.15 A/W at 280 nm, and UV-visible extinction ratio of $1.5{\times}10^4$. Accordingly, the Pt/$Al_{0.33}Ga_{0.67}N$ Schottky-type ultraviolet photodetector with an AlGaN interlayer exhibited superior electrical and optical characteristics and improved UV detecting properties.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.126-133
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• 1992

This study deals with the crystal growth and the optical characteristics of CdS thin films activatedby silver. CdS:Ag thin films were deposited by using an electron beam evaporation(EBE) technique in vacuumof 1.5X 10-'torr, voltage of 4 kV, current of 2.5 mA and substrate temperature of 250$^{\circ}$C CdS:Ag photoconductivefilms prepared by EBE method show high photoconductivity after annealing at about 550"c for 0.5 h in air andAr gas.The grain size of CdS:Ag thin films annealed in Ar atmosphere (1 atm) was grown over 1 ym and the thicknessof the films is 4-5 pm. The analysis of X-ray diffraction patterns shows that the crystal structures are hexagonal.The diffraction line by (00.2) plane can only be observed, indicating that c-axis of hexagonal grows preferentiallyperpendicular to the substrate. The profiles of photoluminescence spectra of CdS:Ag films show Gaussian typecurves at room temperature, the maximum peak spectral sensitivity of CdS:Ag is located at the wavelength of520 nm.We annealed CdS:Ag thin films in air and Ar vapor in order to make the CdS photoconductors having theintensive photocurrent, the broad distribution of the photocurrent spectrum and the large value of the ratioof the photocurrent (pc) to the dark current(dc). We found that CdS:Ag thin films annealed in air atmospherewas the best one.air atmosphere was the best one.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.416-419
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• 2002

There are being two prominent studying for Digital Radiography. Direct and Indirect method of Digital Radiography are announced for producing high quality digital image. The one is using amorphous selenium as photoconductor and the other is using phosphor layer as a light conversion. But each two systems have strength and weakness such as high voltage and blurring effect. In this study, we investigated the electrical characteristic of $multi-layer\left(CaWO_{4}+a-Se \right)$ as a photoconductor according to the changing arsenic composition ratio. This is a basic research for developing of Hybrid digital radiography which is a new type X-ray detector. The arsenic composition ratio of a-Se compound is classified into 7 different kinds which have 0.1%, 0.3%, 0.5%, 1%, 1.5%, 5%, 10% and were made test sample throught thermo-evaporation. The phosphor layer of $CaWO_4$ was overlapped on a-Se using EFIRON optical adhesives. We measured the dark and photo current about the test sample and compared the electrical characteristic of the net charge and signal-to-noise ratio. Among other things, test sample of compound material of 0.3% arsenic showed good characteristic of $2.45nA/cm^2$ dark current and $357.19pC/cm^2/mR$ net charge at $3V/{\mu}m$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.7
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• pp.4828-4834
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• 2015

From the moment that a firing pin triggers the detonator to the moment that a grenade leaves a barrel is called Action Time. Since a loading and percussion of 40mm grenade happens simultaneously, action time should be within a certain time in order to prevent a Jamming malfunction. Previously, unreliable action time device of 40mm grenade made it difficult to improve quality assurance of K4 Grenade Machine Gun. Here, various sensors were compared and a special device was designed to seek an accurate measurement on action time. In this device, the gap between a signal from an optical sensor in Firing Pin and that from Eddy current probe in the barrel was recorded and data were sent to a computer in real time. Confirming if action time is within the criteria, it is expected that action time plays an important role in quality assurance on 40mm grenade.