• Journal of Korean Vacuum Science & Technology
• /
• v.6 no.2
• /
• pp.76-78
• /
• 2002

We have carried out the first-principle electronic structure calculations to investigate the spacer layer formation of Fe/Si multilayered films (MLF) and compared with the results obtained by optical spectroscopy. The computer-simulated spectra based on various structural models of MLF showed that neither FeSi$_2$ nor B2O-phase FeSi, which are semiconducting, could be considered as the spacer layers in the Fe/Si MLF for the strong antiferromagnetic coupling. The optical properties of the spacer extracted from the effective optical response of the MLF strongly support its metallic nature. The optical conductivity spectra of various phases of Fe-Si compounds were calculated and compared with the extracted optical properties of the spacer. From the above theoretical investigations it is concluded that a E2-phase metallic FeSi compound is spontaneously formed at the interfaces during deposition.

• Journal of the Korean Ceramic Society
• /
• v.29 no.12
• /
• pp.990-996
• /
• 1992

Chemical vapor deposition of ATO from SnCl4-SbCl5-H2O gas mixture was investigated with thermodynamic and experimental analyses. Electrical conductivity of the ATO film was much improved under deposition conditions of low input-gas ratio, Psbcl5/Psbcl4. This increase of the conductivity was attributed to donor electrons produced mainly by the pentavalent Sb ions in SnO2 lattice. However high input-gas ratio conditions produced an ATO film consisting of a mixture of SnO2 and very fine Sb2O5 phase. It was found that the deterioration of electrical conductivity and optical transmission of the film was caused by the deposition of fine Sb2O5 phase in the SnO2 matrix.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.112-112
• /
• 2010

Zinc Oxide (ZnO) thin-films were deposited according to the magnetron sputtering method. The deposited ZnO films were annealed with RTA equipment at various annealing temperatures in an vacuum ambient. The influence of the annealing temperature on the structural, electrical, and optical properties of the ZnO films was experimentally investigated, and the effect of conductivity of the ZnO active layer on the device performance of the oxide-TFT was tested. As a result, an increase of the annealing temperature was attributed to improvements of crystallinity in ZnO films. The grain size was found to lead to an increase of conductivity in the ZnO films. Fabricated ZnO TFTs with annealed ZnO active layer provided good performance in the TFT devices. Consequently, the performance of the TFT was determined by the conductivity of the ZnO film, which was related to the structural properties of the ZnO film.

• Korean Journal of Optics and Photonics
• /
• v.28 no.4
• /
• pp.153-157
• /
• 2017

An infrared camera and laser common-path optical system is applied to DIRCM (directional infrared countermeasures), to increase boresighting accuracy and decrease weight. Thermal effects of a laser beam in a common-path optical system are analyzed and evaluated, to predict any degradation in image quality. A laser beam with high energy density is absorbed by and heats the optical components, and then the surface temperature of the optical components increases. The heated optical components of the common-path optical system decrease system transmittance, which can degrade image quality. For analysis, the assumed simulation condition is that the laser is incident for 10 seconds on the mirror (aluminum, silica glass, silicon) and lens (sapphire, zinc selenide, silicon, germanium) materials, and the surface temperature distribution of each material is calculated. The wavelength of the laser beam is $4{\mu}m$ and its output power is 3 W. According to the results of the calculations, the surface temperature of silica glass for the mirror material and sapphire for the lens material is higher than for other materials; the main reason for the temperature increase is the absorption coefficient and thermal conductivity of the material. Consequently, materials for the optical components with high thermal conductivity and low absorption coefficient can reduce the image-quality degradation due to laser-beam thermal effects in an infrared camera and laser common-path optical system.

• Proceedings of the Korean Society of Soil and Groundwater Environment Conference
• /
• 2001.09a
• /
• pp.75-78
• /
• 2001

Authors evaluated the feasibility of a permeable reactive biobarrier (PRB) treated with biofilm formed by Beijerinckia indica (B.indica). This study focused on evaluating two potentials of B.indica for the requirements of PRB: reducing the hydraulic conductivity and degrading the polycyclic aromatic hydrocarbons (PAHs). The hydraulic conductivity was estimated by rigid wall column test and finally the values were converted to the values of intrinsic permeability. The nutrient solution was passed through the biobarrier column to activate the bacterium and then leachate was in turn carried into the column to evaluate the durability of the biobarrier. Phenanthrene was selected as a representative substance of PAHs. The ability of degrading phenanthrene by B.indica was evaluated by two-phase partitioning bioreactor after estimating the possibility with two pretests: observing the colony formation and the optical density on glucose-free medium containing phenanthrene. With the results, B.indica produced large amount of strongly adhesive exopolysaccharides (EPS) and reduced several orders of magnitude of the hydraulic conductivity after 2 weeks of cultivation. Furthermore, about 1000mg/1 of phenanthrene could be degraded by B.indica in the two-phase partitioning bioreactor. In conclusion, the application of the bacterium, B.indica, was found to have a potential role of a PRB to retain and remove contaminants in porous media.

• Journal of the Semiconductor & Display Technology
• /
• v.12 no.1
• /
• pp.29-33
• /
• 2013

We have fabricated transparent polymer composite films with high thermal emissivity, which can be used for heat dissipation of transparent electronics. PMMA (poly(methyl methacrylate)) solution with high transparency and thermal emissivity is mixed with various fillers (carbon nanotubes (CNTs), aluminum nitride (AlN), or silicon carbide (SiC)) with high thermal conductivity. We have achieved the thermal emissivity as high as 0.94 by the addition of CNTs. Compared with the PMMA film on glass, however, the addition of AlN or SiC is shown to rather decrease the thermal emissivity. It is also observed that the thickness of the PMMA film does not affect its thermal emissivity. To avoid any degradation of the thermal conductivity, therefore, the PMMA film thickness is desirable to be $1{\mu}m$. There also exists a tradeoff between the optical transmittance and thermal conductivity on the selection of the amount of fillers.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2001.05a
• /
• pp.303-306
• /
• 2001

Using THz time-domain spectroscopy (THz-TDS), the power absorption and the real conductivity of silica sand are measured terahertz frequency range. It is impossible to measure the characterization of the silica sand by simple electrical measurements using mechanical contacts, e.g., Hail effect or four-point probe measurements. However, the THz-TDS technique can measure not only electrical but also optical characterization of the sample. Also this technique can measure frequency dependent results. Especially, the real conductivity was increased according to THz frequency this is unusual material compare with metal and semiconductor materials; the measured real conductivity are not followed by the simple Drude theory.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1992.05a
• /
• pp.101-104
• /
• 1992

In-doped CdS thin films have been deposited at 150$^{\circ}C$ by simultaneous thermal evaporation of CdS and In. Deposition rate and film thickness were 8A/sec and about 1um, respectively. Indium doping concentration of films varied as Indium source temperature from 500$^{\circ}C$ to 700˚. Properties of In-CdS films have been investigatied by measurements of electrical resistivity, Hall effect, X-ray diffraction and optical trasmission spectra. The conductivity of these films was always n-type. The resistivity, carrier concentration, mobility and optical band gap dependence on Indium source temperature are reported. Carrier concentration and mobility of In-CdS films increased with increasing Indium source temperature: then they decreased. The variation of the optical band gap of In-CdS thin films are related to carrier concentration.

• Journal of the Korean Vacuum Society
• /
• v.7 no.s1
• /
• pp.1-6
• /
• 1998

The influence of the order-disorder structural transition on the magnetic and mageto-optical, and transport properties of Fe-Al and Co-Al alloy films has been investigated. The disordered states in the alloy films were prepared by vapor quenching deposition on glass substrates cooled by liquid nitrogen. The experimental study of the magento-optical properties of the ordered and disordered Fe-Al and Co-Al alloy films has been carried out in 1.05-5.0 eV energy range at room temperature. The transport properties have been measured in 2-300K temperature range with and without magnetic field of 0.5T. The influence of the order-disorder structural transition on the magnetic and magneto-optical properties was discussed by using the effective medium approximation and the structural defect approach. That on the temperature dependence of the resistivity was analyzed in a framework of the partial localization of the electronic states and the variable range hopping conductivity.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.21 no.5
• /
• pp.205-209
• /
• 2011

Zinc oxide has semi-conductivity and super conductivity characteristics. It can be used optically and is applied on many areas such as gas sensor, solar cell and optical waveguide. In this paper, to improve optical characteristics of ZnO, aluminum was added on zinc oxide. Zinc oxide and aluminum zinc oxide was fabricated as nano fiber form. ZnO solution was created by mixing poly vinyl pyrrolidone, ethyl alcohol, and zinc acetate. An Al doped ZnO was created by adding aluminum solution to ZnO sol. By applying these sols on electro spinning method, nano fibers were fabricated. These fibers are heat treated at 300, 500, and $700^{\circ}C$ degrees and were analyzed with X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) to examine the nano structures. TGA and DSC measurement was also used to measure the change of mass and calorie upon temperature change. The absorbance of ZnO and Al-doped ZnO was carried out by UV-vis measurement.