• 제목/요약/키워드: optical chip

검색결과 372건 처리시간 0.027초

광 송수신기 연결을 위한 유리집적광학 평면 광 회로 제작 (Fabrication of Planar Lightwave Circuits for Optical Transceiver Connection using Glass Integrated Optics)

  • 강동성;전금수;김희주;반재경
    • 대한전자공학회논문지SD
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    • 제38권6호
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    • pp.412-419
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    • 2001
  • 본 논문에서는 유리집적광학을 이용하여 채널 도파로, Y-분리기, CWDM 등의 개별소자와 이들을 하나의 유리기판위에 평면형으로 집적하겨 제작함으로써 1.31/1.55㎛ CWDM(Coarse Wavelength Division Multiplexing) 및 1.55㎛ 대역 DWDM (Dense WDM) 수동 광 망에 적용할 수 있도록 하였다. CWDM에 적용한 결과, 1.55㎛ 파장에서는 30㏈, 1.31㎛ 파장에서는 15㏈ 이상의 교차 비를 얻을 수 있었다.

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바이오 응용을 위한 지능형 실리콘 비드 칩 설계 (Intelligent silicon bead chip design for bio-application)

  • 문형근;정인영
    • 한국정보통신학회논문지
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    • 제16권5호
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    • pp.999-1008
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    • 2012
  • ISB(Intelligent Silicon Bead)는 기존 CMOS 칩과 달리 CMOS SoC의 전원을 포함한 외부와의 인터페이스(interface)를 모두 빛을 이용하여 칩의 초소형화 및 단가를 낮추고 광통신, 메모리 기능을 탑재한 신개념 바이오 실험용 칩이다. 본 논문에서는 외부리더기로부터 비드칩에 인가된 하나의 광신호를 통해 전력과 신호를 동시에 전달하기 위한 저전력, 저면적특성의 광수신단 설계와 입력프로토콜에 대해서 소개하고 이를 시뮬레이션 및 측정을 통해 검증한다. 또한 칩의 ID를 기록/저장하기 위한 저전력 PROM을 설계하여 광신호 입력에 따른 출력 결과 값을 얻는데 성공한다. 본 연구를 통하여 기존 RFID에서 발생한 칩면적 소형화의 한계와 높은 단가 등의 문제점을 해결하여 새로운 유형의 바이오용 칩 개발을 기대할 수 있다.

10 Gbps Transimpedance Amplifier-Receiver for Optical Interconnects

  • Sangirov, Jamshid;Ukaegbu, Ikechi Augustine;Lee, Tae-Woo;Cho, Mu Hee;Park, Hyo-Hoon
    • Journal of the Optical Society of Korea
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    • 제17권1호
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    • pp.44-49
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    • 2013
  • A transimpedance amplifier (TIA)-optical receiver (Rx) using two intersecting active feedback system with regulated-cascode (RGC) input stage has been designed and implemented for optical interconnects. The optical TIA-Rx chip is designed in a 0.13 ${\mu}m$ CMOS technology and works up to 10 Gbps data rate. The TIA-Rx chip core occupies an area of 0.051 $mm^2$ with power consumption of 16.9 mW at 1.3 V. The measured input-referred noise of optical TIA-Rx is 20 pA/${\surd}$Hz with a 3-dB bandwidth of 6.9 GHz. The proposed TIA-Rx achieved a high gain-bandwidth product per DC power figure of merit of 408 $GHz{\Omega}/mW$.

칩상호 광접속용 GaAs 광전집적회로의 기본 공정 II (LD 구조 ; 집적화 연구) (GaAs OEIC Unit Processes for chip-to-chip Interconnection II (LD structure ; integration))

  • 김창남
    • 한국광학회:학술대회논문집
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    • 한국광학회 1989년도 제4회 파동 및 레이저 학술발표회 4th Conference on Waves and lasers 논문집 - 한국광학회
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    • pp.185-192
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    • 1989
  • It is shown that GaAs/GaAs stripe Roof-Top-Reflector LD is better than cleaved mirror LD by numerical analysis. And surface light emitting device is developed by LPE melt-back growth, which is of good controllability for OEIC. OEIC transmitter using RTR LD structured device and FET has been made and modulated, expected to show good modulation characteristics after solving process problem. Beam-Lead LD mounted on Si carrier has been made and shows low heat-resistance and so long life and good characteristics of LD.

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Optical Skin-fat Thickness Measurement Using Miniaturized Chip LEDs: A Preliminary Human Study

  • Ho, Dong-Su;Kim, Ee-Hwa;Hwang, In-Duk;Shin, Kun-Soo;Oh, Jung-Taek;Kim, Beop-Min
    • Journal of the Optical Society of Korea
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    • 제13권3호
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    • pp.304-309
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    • 2009
  • We tested the feasibility of measuring fat thickness using a miniaturized chip LED sensor module, testing 12 healthy female subjects. The module consisted of a single detector and four sources at four different source-detector distances (SD). A segmental curve-fitting procedure was applied, using an empirical algorithm obtained by Monte-Carlo simulation, and fat thicknesses were estimated. These thicknesses were compared to computed-tomography (CT) results; the correlation coefficient between CT and optical measurements was 0.932 for bicep sites. The mean percentage error between the two measurements was 13.12%. We conclude that fat thickness can be efficiently measured using the simple sensor module.

A Magneto-optical Trap Below a Dielectric Coated Mirror Surface

  • Yu, Hoon;Lee, Lim;Lee, Kyung-Hyun;Kim, Jung-Bog
    • Journal of the Optical Society of Korea
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    • 제13권2호
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    • pp.223-226
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    • 2009
  • A Magneto-Optical Trap (MOT) for $^{87}Rb$ atoms near the surface of a dielectric coated mirror at the top of a small $20{\times}25{\times}40\;mm^3$ cell has been observed. Two beams of $3.3\;mW/cm^2$ were used for optical cooling and an anti-Helmholtz magnetic field with a spatial gradient of 9.1 G/cm was used for magnetic trapping. The thickness of the mirror coated on a cover glass was less than $100{\mu}m$. The mirror covered the top of a cell and the atom-chip was located outside the vacuum in order to exploit the long life time of the mirror and easy operation of the chip. The trapping position was found 5 mm beneath the mirror surface. The number of trapped atoms was roughly $3{\times}10^7$ atoms and the temperature was approximately a few tens mK. In this paper, we describe the construction of the mirror-MOT in detail.

Analysis of the Temperature Dependence of Phosphor Conversion Efficiency in White Light-Emitting Diodes

  • Ryu, Guen-Hwan;Ryu, Han-Youl
    • Journal of the Optical Society of Korea
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    • 제19권3호
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    • pp.311-316
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    • 2015
  • We investigate the temperature dependence of the phosphor conversion efficiency (PCE) of the phosphor material used in a white light-emitting diode (LED) consisting of a blue LED chip and yellow phosphor. The temperature dependence of the wall-plug efficiency (WPE) of the blue LED chip and the PCE of phosphor are separately determined by analyzing the measured spectrum of the white LED sample. As the ambient temperature increases from 20 to $80^{\circ}C$, WPE and PCE decrease by about 4.5% and 6%, respectively, which means that the contribution of the phosphor to the thermal characteristics of white LEDs can be more important than that of the blue LED chip. When PCE is decomposed into the Stokes-shift efficiency and the phosphor quantum efficiency (QE), it is found that the Stokes-shift efficiency is only weakly dependent on temperature, while the QE decreases rapidly with temperature. From 20 to $80^{\circ}C$ the phosphor QE decreases by about 7% while the Stokes-shift efficiency changes by less than 1%.

Analysis on the Luminous Efficiency of Phosphor-Conversion White Light-Emitting Diode

  • Ryu, Han-Youl
    • Journal of the Optical Society of Korea
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    • 제17권1호
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    • pp.22-26
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    • 2013
  • The author analyzes the luminous efficiency of the phosphor-conversion white light-emitting diode (LED) that consists of a blue LED chip and a yellow phosphor. A theoretical model is derived to find the relation between luminous efficiency (LE) of a white LED, wall-plug efficiency (WPE) of a blue LED chip, and the phosphor absorption ratio of blue light. The presented model enables to obtain the theoretical limit of LE and the lower bound of WPE. When the efficiency model is applied to the measured results of a phosphor-conversion white LED, the limit theoretical value of LE is obtained to be 261 lm/W. In addition, for LE of 88 lm/W at 350 mA, the lower bound of WPE in the blue LED chip is found to be ~34%. The phosphor absorption ratio of blue light was found to have an important role in optimizing the luminous efficiency and colorimetric properties of phosphor-conversion white LEDs.