• BioChip Journal
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• 제12권4호
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• pp.280-286
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• 2018

Hydrogel scaffolds composed of multiple components are promising platform in tissue engineering as a transplantation materials or artificial organs. Here, we present a new fabrication method for implementing multi-layered macroscopic hydrogel scaffold composed of multiple components by controlling height of hydrogel layer through precise control of ultraviolet (UV) energy density. Through the repetition of the photolithography process with energy control, we can form several layers of hydrogel with different height. We characterized UV energy-dependent profiles with single-layered PEGDA posts photocrosslinked by the modular methodology and examined the optical effect on the fabrication of multi-layered, macroscopic hydrogel structure. Finally, we successfully demonstrated the potential applicability of our approach by fabricating various macroscopic hydrogel constructs composed of multiple hydrogel layers.

• 대한전자공학회논문지SD
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• 제45권4호
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• pp.36-42
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• 2008

본 논문은 광통신-시리얼 링크를 위한 40Gb/s 클록 및 데이터 복원 회로의 설계를 제안한다. 설계된 본 회로는 다중 위상을 생성하는 LC 탱크 PLL을 이용하여 8개의 샘플링 클록을 생성하고 $2{\times}$ 오버샘플링 구조의 뱅-뱅 위상 검출기를 이용하여 데이터와 클록의 위상을 조정한다. 40Gb/s의 입력 데이터가 샘플링을 거쳐서 1:4 디멀티플렉싱되어 4채널에 10Gb/s 출력으로 복원되는 구조로서 디지털과 아날로그의 전원을 분리하여 설계가 진행되었다. 인덕터를 사용하여 칩면적은 $2.8{\times}2.4mm^2$을 차지하고 전력소모는 약 200mW이다. 0.18um CMOS공정으로 칩 제작후 측정결과 채널당 악 9.5Gb/s 출력이 측정되었다(직렬입력 약 38Gb/s 해당).

• 한국광학회지
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• 제16권3호
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• pp.275-286
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• 2005

InGaN LED에서 칩 구조 및 칩마운트 구조에 따른 광추출효율의 변화를 Monte Calo 기법을 이용하여 해석하였다. Simulation을 통해 얻은 중요한 결론의 하나는, InGaAlP 또는 InGaN/SiC LED의 경우에서는 달리, InGaN/sapphire LED의 경우 칩의 측 벽면 기울임 기법의 광추출효율 개선효과가 상대적으로 미미하다는 점이다. InGaN/SiC LED의 경우와는 달리, 기판으로 사용되는 sapphire의 굴절률이 상대적으로 작아서 생성된 광자들이 기판으로 넘어가는데 전반사장벽을 만나게 되어, 많은 광자들이 기판으로 넘어가지 못하고 두께가 매우 얇은 반도체 결정층에 갇히는 현상 때문이다. 동일한 현상은 epi-down 구조의 칩 마운트에서 광추출효율이 크게 개선되지 못하는 원인으로도 작용하게 된다. 광추출효율 관점에서의 epi-down 구조의 InGaN/sapphire LED가 갖고 있는 잠재력을 살리기 위한 방법의 하나는 기판-에피택시 계면을 texturing 하는 것이라고 할 수 있는데, 이 경우 생성된 광자들이 다량기판으로 넘어갈 수 있게 되어 광추출효율이 현저하게 개선된다.

• 한국광학회지
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• 제8권6호
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• pp.510-515
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• 1997

광모듈에서는 반도체소자와 광섬유간의 복잡한 정렬에 필요한 패키지비용이 제조단가의 많은 비중을 차지하고 있어 수동정렬방식으로 광정렬절차를 제거하여 패키지비용을 절감하는데 대한 많은 연구가 행해지고 있다. 본 연구에서는 단일 모드 광섬유와 레이저 및 광검출기를 수동적으로 광결합시킬 수 있는 실리콘 광학벤치를 제작하고 이를 사용하여 광송수신기용의 광부모듈을 제작하였다. 기판의 구조에 있어서 V-홈에 정렬된 광섬유와 플립칩 본딩되는 LD간의 위치 정밀도를 개선하기 위하여 V-홈 식각패턴과 자기정렬된 정렬마크와 솔더댐을 사용하고 레이저의 높이조절 및 열방출을 위하여 도금된 금 받침대를 도입하였다. 실리콘 광학벤치를 이용하여 수동정렬방식으로 조립된 송신기용 광부모듈은 평균 -11.75.+-.1,75 dB의 광결합효율을 나타내었고 수신기용 광부모듈은 평균 -35.0.+-.1.5 dBm의 수신감도를 나타내었다.

• 한국재료학회지
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• 제15권10호
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• pp.626-631
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• 2005

GaN-related compound semiconductors were grown on the corrugated interface substrate using a metalorganic chemical vapor deposition system to increase the optical power of white LEDs. The patterning of substrate for enhancing the extraction efficiency was processed using an inductively coupled plasma reactive ion etching system and the surface morphology of the etched sapphire wafer and that of the non-etched surface were investigated using an atomic force microscope. The structural and optical properties of GaN grown on the corrugated interface substrate were characterized by a high-resolution x-ray diffraction, transmission electron microscopy, atomic force microscope and photoluminescence. The roughness of the etched sapphire wafer was higher than that of the non-etched one. The surface of III-nitride films grown on the hemispherically patterned wafer showed the nano-sized pin-holes that were not grown partially. In this case, the leakage current of the LED chip at the reverse bias was abruptly increased. The reason is that the hemispherically patterned region doesn't have (0001) plane that is favor for GaN growth. The lateral growth of the GaN layer grown on (0001) plane located in between the patterns was enhanced by raising the growth temperature ana lowering the reactor pressure resulting in the smooth surface over the patterned region. The crystal quality of GaN on the patterned substrate was also similar with that of GaN on the conventional substrate and no defect was detected in the interface. The optical power of the LED on the patterned substrate was $14\%$ higher than that on the conventional substrate due to the increased extraction efficiency.

• 한국광학회지
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• 제14권5호
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• pp.504-508
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• 2003

최근 전자산업계에 새롭게 널리 생산되는 마이크로 전자부품들은 왜곡이 최소화된 정밀한 외관 형상을 갖도록 제조되고 관리되지만, 측정 대상의 표면이 가시광 영역에서 광산란되는 특징을 가짐으로 인해, 기존의 피죠나 마이켈슨 형태의 비교간섭법으로는 고정밀의 삼차원 형상측정이 용이하지 아니하였다. 본 논문에서는 광섬유를 이용한 새로운 개념의 점회절 간섭계를 제안하고, 이를 광산란 거친표면의 대표적인 제품인 칩패키지와 실리콘 웨이퍼의 삼차원 형상 측정에 적용하였다. 측정결과 66 mm 측정영역에서 측정 형상오차 PV(peak-to-valley value) 5.6 $\mu\textrm{m}$, 분산값($\sigma$) 1.5 $\mu\textrm{m}$를 획득함으로써 기존의 비교 간섭 측정법에 비해 더욱 향상된 측정 정밀도를 획득하였다.

• 한국정밀공학회지
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• 제28권6호
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• pp.709-715
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• 2011

Chattering in cutting operations are usually a cumbersome part of the manufacturing process in mechanical. Particular, machining performance such as that of the boring process is limited by cutting condition at the movable components. Among various sources of chatter vibration, detrimental point in cutting condition is found a mechanical condition on overhang. It limits cutting speed, depth, surface roughness and tool wear failure as result because the all properties are varying with the metal removal process. In this case, we have to observe the resonance frequencies of a boring bar for continuous cutting. In the established research, boring bar vibration of cutting system has been measured with the aid of accelerometer. However, the inherent parameters of internal turning operations are severely limit for the real time monitoring on accelerometers. At this point, this paper is proposed other method for real time monitoring during continuous cutting with optical fiber at the inside of boring bar. This method has been used a plastic fiber in the special jig on boring bar by based on experimental modal analysis. In this study, improvement of monitoring system on continuous internal cutting was attempted using optical fiber sensor of inside type because usually chattering is investigated experimentally measuring the variation in chip thickness. It is demonstrated that the optical fiber sensor is possibility to measure of chattering with real time in boring process.

• 한국광학회지
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• 제27권4호
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• pp.127-132
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• 2016

본 논문에서는 다채널 가변광감쇠기에서 발생하는 열간섭 효과를 차단하여 광효율을 높이기 위하여 펨토초 레이저를 이용하여 트렌치를 가공하였다. 채널간 열간섭으로 인한 광감쇠 제어효율 하락을 막기 위하여, 가변광감쇠기 채널 사이에 펨토초 레이저로 트렌치의 폭과 깊이를 다르게 하여 가공하였고, 적용된 각 칩을 모듈화하여 전류에 따른 광감쇠율 변화를 관찰하였다. 그 결과 광감쇠를 위해 가해진 열이 주변채널에 영향을 매우 작게 미치는 것을 확인하였고, 뿐만 아니라 작은 전류에 광감쇠율이 민감하게 변화하는 것을 확인할 수 있어 효율적인 소자로서 개발 가능함을 확인하였다.

• Design & Manufacturing
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• 제6권1호
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• pp.84-89
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• 2012

Silicone is recently used for LED chip encapsulment due to its good thermal stability and optical transmittance. In order to predict residual stress which causes optical briefringence and mechanical warpage of silicone, finite element analysis was conducted for both curing and cooling process during silicone molding. For analysis of curing process, a cure kinetics model was derived based on the differential scanning calorimetry(DSC) test and applied to the material properties for finite element analysis. Finite element simulation result showed that the curing as well as the cooling process should be designed carefully so as to reduce the residual stress although the cooling process plays the bigger role than curing process in determining the final residual stress state. In addition, birefringence experiment was carried out in order to observe residual stress distribution. Experimental results showed that cooling-induced birefringence was larger than curing-induced birefringence.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.24-24
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• 2003

Research activity in the III-V nitrides materials system has increased markedly in the past several years ever since high-brightness blue light-emitting diodes (LEDs) became commercially available. Despite of excellent optical properties of the GaN, however, inherently poor thermal property of the sapphire used as a substrate material n these devices may lead to thermal degradation of devices, especially during their high power operation. Therefore, dependable thermal analysis and packaging schemes of GaN-based LEDs are necessary for solid lighting applications under high power operation. In this paper, emphasis will be placed upon thermal design of GaN-based LEDs. Thermal measurements of LEDs on chip and packaging scale were performed using the liquid crystal thermographic technology and micro thermocouples for different bias conditions. By a series of optical arrangement, hot spots with specific transition temperatures were obtained with increasing input power. Thermal design of LEDS was made using the finite element method and analytical unit temperature profile approach with optimal boundary conditions. The experimental results were compared to the simulated data and the results agree well enough for the establishment of dependable prediction of thermal behavior in these devices. The paper will present a more detailed understanding of the thermal analysis of the GaN-based blue and white LEDs for high power applications.