• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.8
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• pp.8-13
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• 2009

LED BLU(Back Light Unit), based on MCPCB(Metal Core Printed Circuit Board) with anodizing oxide dielectric layer and improved thermal dissipation property, are presented. Reflecting cups were also formed on the surface of the MCPCB such that optical coupling between neighboring chips were minimized for improving the photon extraction efficiency. LED chips were directly attached on the MCPCB by using the COB (Chip On Board) scheme.

• Current Optics and Photonics
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• v.1 no.6
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• pp.626-630
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• 2017

GaN-based green light-emitting diode (LED) structures suffer from low internal quantum efficiency (IQE), known as the "green gap" problem. The IQE of LED structures is expected to be improved to some extent by exploiting the Purcell effect. In this study, the Purcell effect on the IQE of green LED structures is investigated numerically using a finite-difference time-domain simulation. The Purcell factor of flip-chip LED structures is found to be more than three times as high as that of epi-up LED structures, which is attributed to the high-reflectance mirror near the active region in the flip-chip LED structures. When the unmodified IQE is 20%, the relative enhancement of IQE can be greater than 50%, without utilizing the surface-plasmon coupling effect. Based on the simulation results, the "green gap" problem of GaN-based green LEDs is expected to be mitigated significantly by optimizing flip-chip LED structures to maximize the Purcell effect.

• Proceedings of the KIEE Conference
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• 1998.07e
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• pp.1696-1698
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• 1998

Pulsed Nd:YAG laser using Nd:YAG crystal operates stably in the thermal conductivity, mechanical, optical condition. That is used broadly in material processings because of easy reaction to the materials, and the maintenance is very easy because of lamp excitation. In these material processings, power dinsity control is very important to improve processing technology. Power density is controled by inductance and capacitance or repetition rate. Therefore we are going to control laser power density as One-Chip Microprocessor(PIC16C55) and 8051. We have been experimented at the pulse repetition rate range of 10pps to 60pps(pulse per second).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.4
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• pp.404-409
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• 2004

We fabricated photo-sensor for fluorescence detection in LOC. LOC is high throughput screening system. Our LOC screens biochemical reaction of protein using the immunoassay, and converts biochemical reaction into electrical signal using LIF(Laser Induced Fluorescence) detection method. Protein is labeled with rhodamine intercalating dye and finger PIN photodiode is used as photo-sensor We measured fluorescence emission of rhodamine dye and analyzed tendency of fluorescence detection, according to photo-sensor size, light intensity, and rhodamine concentration. Detection current was almost linearly proportional to two parameters, intensity and concentration, and was inversely proportional to photo-sensor size. Integrated LOC consists of optical-filter deposited photo-sensor and PDMS microchannel detected 50 (pg/${mu}ell$) rhodamine. For integrated LOC including light source, we used green LED as the light source and measured emitted fluorescence.

• ETRI Journal
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• v.26 no.1
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• pp.1-6
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• 2004

The photonic quantum ring (PQR) laser is a three dimensional whispering gallery (WG) mode laser and has anomalous quantum wire properties, such as microampere to nanoampere range threshold currents and ${\sqrt{T}}$-dependent thermal red shifts. We observed uniform bottom emissions from a 1-kb smart pixel chip of a $32{\times}32$ InGaAs PQR laser array flip-chip bonded to a 0.35 ${\mu}m$ CMOS-based PQR laser driver. The PQR-CMOS smart pixel array, now operating at 30 MHz, will be improved to the GHz frequency range through device and circuit optimization.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.197-199
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• 2002

This paper describes the effects of chip arrangement configurations and the dimension of a reflecting cup upon the light output characteristics of a white lamp composed of RGB LED chips. As a result of simulation, the shorter distance between adjacent chips leads to a relative decrease in the light output efficiency due to inter-chip absorption of quanta, but rather uniform color mixing is expected. Among the factors of designing a reflecting cup it is the tilt angle of the cup wall that plays a determining role upon the variation of the light distribution. The light distribution shows a sudden change of pattern from Lambertian to Batwing at about $35^{\circ}{\sim}40^{\circ}$ of tilt angle in case of a silver-coated wall cup.

• Journal of the Korean institute of surface engineering
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• v.40 no.2
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• pp.103-106
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• 2007

We have investigated the optical and electrical properties of surface mounted white light emitting diode (LED) chips prepared by using yellow phosphors on the blue LED chip. The yellow phosphor mixed with transparent epoxy was coated on the prepared LED chip. The optimum mixing conditions with epoxy and yellow phosphor is obtained at the mixing ratio of epoxy:yellow phosphor = 97:3 wt%. The maximum luminance and light emitting efficiency are above $80,000cd/m^2$ and 23.2 lm/W, respectively, at the bias voltage of 2.9 V. There was no distinct change in the luminance strength with changing of the yellow phosphor ratios. The current of the white LED chip is about 30 mA at 2.9 V.

• Current Optics and Photonics
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• v.8 no.4
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• pp.399-405
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• 2024

In this paper, an optical modulator based on monolayer graphene and triple-layer black phosphorus (BP) heterojunction in the optical communication band range is designed. The influences of geometric parameters, chemical potential, BP orientation and dispersion on the fundamental mode of this modulator were determined in detail by the finite-difference time-domain (FDTD) method. Using appropriate geometric parameter settings, the extinction ratio of this proposed modulator is 0.166 dB, while the modulator with a working length of 3 ㎛ can realize a 0.498 dB modulation depth. The 3-dB bandwidth of this modulator could achieve up to 2.65 GHz with 27.23 fJ/bit energy consumption. The extinction ratio and bandwidth of the proposed modulator increased by 66% and 120.83%, respectively, compared to the monolayer graphene-based ridge-type waveguide modulator. Energy consumption was reduced by 97.28%, compared to a double-layer graphene-based modulator.

• Smart Structures and Systems
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• v.12 no.1
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• pp.23-39
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• 2013

In this article, a smart multifunctional optical system-on-a-chip (SOC) sensor platform is presented and its application for fiber Bragg grating (FBG) sensor interrogation in optical sensor networks is investigated. The smart SOC sensor platform consists of a superluminescent diode as a broadband source, a tunable microelectromechanical system (MEMS) based Fabry-P$\acute{e}$rot filter, photodetectors, and an integrated microcontroller for data acquisition, processing, and communication. Integrated with a wireless sensor network (WSN) module in a compact package, a smart optical sensor node is developed. The smart multifunctional sensor platform has the capability of interrogating different types of optical fiber sensors, including Fabry-P$\acute{e}$rot sensors and Bragg grating sensors. As a case study, the smart optical sensor platform is demonstrated to interrogate multiplexed FBG strain sensors. A time domain signal processing method is used to obtain the Bragg wavelength shift of two FBG strain sensors through sweeping the MEMS tunable Fabry-P$\acute{e}$rot filter. A tuning range of 46 nm and a tuning speed of 10 Hz are achieved. The smart optical sensor platform will open doors to many applications that require high performance optical WSNs.

• Journal of the Optical Society of Korea
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• v.6 no.4
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• pp.180-184
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• 2002

In this study, we investigated mask errors, photo errors with attenuated phase shift mask and off-axis illumination, and etch errors in dry etch conditions. We propose that total process proximity correction (TPPC), a concept merging every process step error correction, is essential in a lithography process when minimum critical dimension (CD) is smaller than the wavelength of radiation. A correction rule table was experimentally obtained applying TPPC concept. Process capability of controlling gate CD in DRAM fabrication should be improved by this method.