• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.415-415
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• 2013

We have investigated the optical and electrical properties of the CIGS thin film solar cells by the electroreflectance (ER), photoreflectance (PR), photoluminescence (PL), and photocurrent (PC) spectroscopies at room temperature. The ER spectrum had two narrow signal regions and one broad signal region. We measured PL and PC to confirm the signals at low energy region (1.02~1.35 eV), so these signals are related to the CIGS thin film, and the high energy region (2.10~2.52 eV) is related to the CdS bandgap energy. The broad signal region (1.35~2.09 eV) is due to the internal electric field by the p-n junction from the comparison between PR and ER spectra, and we calculated the internal electric field by the p-n junction. In the high efficiency solar cell, the CdS signal of ER spectrum is narrower than the lower efficiency solar cells.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.126-130
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• 1995

$CdS_{1-x}Te_{1-x}$ polycrystalline thin films were fabricated from CdS and CdTe powder by co-evaporation method at $10^{-6}$ Torr. The Optimum evaporation condition was substrate temperature $T_{s}$=$150^{\circ}C$, evaporation time t=30 min. XRD spectrums indicated that the crystal structure chanced from zinc blonde (x$\leq$0.22) to wurtzite (x$\geq$0.96) through mixed structure (0.22$\leq$0.74) as composition value x increase to CdS. Conductive type was n-type by hot point probe method. van der Pauw method was not applicable for x<0,5 due to high hall voltages, Electrical resistivity and Hall carrier mobility were decreased as x increase, while Hall carrier concentration was increased. The optical bandgap of $CdS_{1-x}Te_{1-x}$ polycrystalline thin films measure d at R.T. had quardratic form and the bowing parameter was fitted as 1.98eV for theoretical value of 2.0eV. I-V characteristics of In/CdTe/$CdS_{x}Te_{1-x}$Au Schottky diodes showed that CdS-rich one had better forward characteristics than CdTe-rich one.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.579-582
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• 2004

[ $Mg_xZn_{1-x}O$ ] thin films on (001) sapphire substrates have been deposited by pulsed laser deposition (PLD). The substrate temperature has been varied from $200^{\circ}C$ to $600^{\circ}C$ in order to control Mg content in $Mg_xZn_{1-x}O$ thin film. $Mg_xZn_{1-x}O$ thin films deposited at 200, 400 and $600^{\circ}C$ were annealed at temperatures of $800^{\circ}C$. The ratio of Mg was mesured by Rutherford backscattering spectrometry. The optical properties of $Mg_xZn_{1-x}O$ thin films were characterized by photomulinesence. The ratio of Mg was varied depending on the deposition temperatures which resulted in the change of energy bandgap.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.227-227
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• 2010

기존 실리콘 박막 태양 전지는 적외선에 대한 감응도와 흡수도가 낮아서 광흡수율을 증가시킬 경우 효율의 효과적인 개선이 기대되어진다. 이를 개선하기 위해서 밴드갭이 Si에 비해 상대적으로 낮은 Ge을 도입함으로써 Si와 Ge 화합물을 형성할 경우 결정상태와 수소 함유량에 따라 밴드갭 조절이 가능하다. 또한 Ge는 Si에 비해 빛에 대한 감응도가 우수하여 광흡수율을 증가시킬수 있다. 단 SiGe 박막의 Ge 량이 일정량이상 많아질 경우 박막 내 결함 등의 생성으로 광변환 효율이 오히려 감소하므로 Ge 량의 적정화가 필요하다. 본 실험에 사용된 SiGe:H Layer는 $SiH_4$ 가스와 $GeH_4$ 가스를 혼합하여 증착하였고 증착두께는 150nm로 고정하였으며 증착장비는 PECVD를 이용하였다. 파워는 플라즈마의 방전특성을 알아본 후 최소파워를 이용하여 증착하였다. 이는 증착 시 플라즈마에 의한 박막 손상을 최소화하기 위함이다. Ellipsometry를 이용하여 박막의 두께와 optical bandgap을 측정하였다. 박막의 특성을 평가하기 위해서 STA 장비를 이용하여 dark conductivity, photo conductivity, activation energy 등을 측정하였고, MDC를 이용해 C-V 곡선을 측정하였고, 이를 terman method를 이용하여 $D_{it}$를 계산하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1584-1586
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• 2002

CuIn$Se_2$ (CIS) and related compounds such as Cu($In_xGa_{1-x})Se_2$(CIGS) have been studied by their potential for use in photovoltaic devices. CIS thin film materials which have high absorption coefficient and wide bandgap, have attracted much attention as an alternative to crystalline and amorphous silicon solar cells currently in use. Cu-rich CIGS film have very low resistivity, due to coexistence of the semimetallic $Cu_{2-x}Se$. In-rich CIGS films show high resistivity, since these films are compensated films without the $Cu_{2-x}Se$ phase. Optical properties of the CIGS films also change in accordance with the resistivity for the Cu/(In+Ga) ratio. The Cu-rich films have different spectra from In-rich films in near infrared wavelengths.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.15-15
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• 2011

Atom-thick graphene membrane and nano-sized graphene objects (NGOs) hold substantial potential for applications in future molecular-scale integrated electronics, transparent conducting membranes, nanocomposites, etc. To realize this potential, chemical properties of graphene need to be understood and diagnostic methods for various NGOs are also required. To meet these needs, chemical properties of graphene and optical diagnostics of graphene nanoribbons (GNRs) have been explored by Raman spectroscopy, AFM and STM scanning probes. The first part of the talk will illustrate the role of underlying silicon dioxide substrates and ambient gases in the ubiquitous hole doping of graphene. An STM study reveals that thermal annealing generates out-of-plane deformation of nanometer-scale wavelength and distortion in $sp^2$ bonding on an atomic scale. Graphene deformed by annealing is found to be chemically active enough to bind molecular oxygen, which leads to a strong hole-doping. The talk will also introduce Raman spectroscopy studies of GNRs which are known to have nonzero electronic bandgap due to confinement effect. GNRs of width ranging from 15 nm to 100 nm have been prepared by e-beam lithographic patterning of mechanically exfoliated graphene followed by oxygen plasma etching. Raman spectra of narrow GNRs can be characterized by upshifted G band and strong disorder-related D band originating from scattering at ribbon edges. Detailed analysis of the G, D, and 2D bands of GNRs proves that Raman spectroscopy is still a reliable tool in characterizing GNRs despite their nanometer width.

• 반도체디스플레이기술학회지
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• 제13권3호
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• pp.35-38
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• 2014

Flat panel displays fabricated on glass substrate use amorphous Si for data processing circuit. Recent progress in display technology requires a new material to replace the amorphous Si, and ZnO is a good candidate. ZnO is a wide bandgap (3.3 eV) semiconductor with high mobility and good optical transparency. ZnO is usually grown by sputtering using ZnO ceramic target. However, ceramic target is more expensive than metal target, and making large area target is very difficult. In this work we studied characteristics of ZnO thin-film transistor grown by rf sputtering using Zn metal target and $CO_2$. ZnO film was grown at $450^{\circ}C$ substrate temperature, with -70 V substrate bias voltage applied. By using these methods, our ZnO TFT showed $5.2cm^2/Vsec$ mobility, $3{\times}10^6$ on-off ratio, and -7 V threshold voltage.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.462-462
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• 2013

Gallium Oxide (Ga2O3) has been widely investigated for the optoelectronic applications due to its wide bandgap and the optical transparency. Recently, with the development of fabrication techniques in nanometer scale semiconductor materials, there have been an increasing number of extensive reports on the synthesis and characterization of Ga2O3 nano-structures such as nano-wires, nanobelts, and nano-dots. In contrast to typical vaporliquid-solid growth mode with metal catalysts to synthesis 1-dimensional nano-wires, there are several difficulties in fabricating the nanostructures by using sputtering techniques. This is attributed to the fact that relatively low growth temperatures and higher growth rate compared with chemical vapor deposition method. In this study, Ga2O3 chestnut burr were synthesized by using radio-frequency magnetron sputtering method. In contrast to typical sputtering method with sintered ceramic target, a Ga2O3 powder (99.99% purity) was used as a sputtering target. Several samples were prepared with varying the growth parameters, especially he growth time and the growth temperature to investigate the growth mechanism. Samples were characterized by using XRD, SEM, and PL measurements. In this presentation, the details of fabrication process and physical properties of Ga2O3 nano chestnut burr will be reported.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.675-675
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• 2013

CIGS thin films have received a great attention as a promising material for solar cells due to their high absorption coefficient, appropriate bandgap, long-term stability, and low cost production. CIGS thin films have been deposited by various methods such as co-evaporation, sputtering, spray pyrolysis and electro-deposition. In this study, Cu(In,Ga)Se2(CIGS) thin films were prepared using a single quaternary target by rf magnetron sputtering. The effect of sulfurization on the structural, compositional and electrical properties of the films was examined in order to develop the deposition process. An optimal sulfurization process will be selected for the preparation of CIGS thin films with good structural, optical and electrical properties by applying various sulfurization processes. In addition, the electrical properties of CIGS thin films were investigated by post-deposition annealing process. The carrier concentration of CIG(SSe) thin films after sulfurization was increased from $10^{14}cm^{-3}$ to $10^{16}cm^{-3}$ and the resistivity was increased from 10 ${\Omega}cm$ to $10^3$ ${\Omega}cm$. It is confirmed that CIG(SSe) thin films prepared at optimal deposition condition have similar atomic ratio to the target value after sulfurization.

• 한국세라믹학회지
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• 제37권3호
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• pp.219-226
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• 2000

Amorphous Ge20As20Se60 chalcogenide thin films were prepared by spin coating technique from mixed solutions of As40Se60 and Ge40Se60 dissolved in ethylenediamine. Films were prepared at a roating speed of 3500 rpm and spinning time was 10 second and heat-treateed at 27$0^{\circ}C$ for 1 hour. The resulting film thickness and RMS roughness were approximately 340 nm and 15$\AA$. Photostructure changes were investigated with 514.5nm Ar+ laser irradiation and heat-treatment. After Ar+ laser irradiation, transmittance and transmission efficiency decreased respectively up to 24.9% at 2.43 eV and 67.5% at 3.27 eV, and absorption edge shifted toward long wavelength. Optical bandgap changed from 2.03 to 1.83 eV, and absoprtion coefficient and absorption efficiency increased up to 0.33$\times$105cm-1 at 3.37eV and 88.3% at 1.31 eV, respectively. These photodarkening state were recovered reversibly by heat-treatment at 27$0^{\circ}C$ for 1 hour. Photodarkening and thermal bleaching effects by laser irradiation and heat-treatment revealed reversible amorphous-to-amorphous transition varying only coordination number.