• Title/Summary/Keyword: open circuit

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The characteristic of Cu2ZnSnS4 thin film solar cells prepared by sputtering CuSn and CuZn alloy targets

  • Lu, Yilei;Wang, Shurong;Ma, Xun;Xu, Xin;Yang, Shuai;Li, Yaobin;Tang, Zhen
    • Current Applied Physics
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    • v.18 no.12
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    • pp.1571-1576
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    • 2018
  • Recent study shows that the main reason for limiting CZTS device performance lies in the low open circuit voltage, and crucial factor that could affect the $V_{oc}$ is secondary phases like ZnS existing in absorber layer and its interfaces. In this work, the $Cu_2ZnSnS_4$ thin film solar cells were prepared by sputtering CuSn and CuZn alloy targets. Through tuning the Zn/Sn ratios of the CZTS thin films, the crystal structure, morphology, chemical composition and phase purity of CZTS thin films were characterized by X-Ray Diffraction (XRD), scanning electron microscopy (SEM) equipped with an energy dispersive spectrometer (EDS) and Raman spectroscopy. The statistics data show that the CZTS solar cell with a ratio of Zn/Sn = 1.2 have the best power convention efficiency of 5.07%. After HCl etching process, the CZTS thin film solar cell with the highest efficiency 5.41% was obtained, which demonstrated that CZTS film solar cells with high efficiency could be developed by sputtering CuSn and CuZn alloy targets.

Densification and Electrochemical Properties of YSZ Electrolyte Decalcomania Paper for SOFCs by Decalcomania (전사법으로 제조한 SOFC용 YSZ 전해질 전사지의 치밀화 및 전기화학적 특성)

  • Cho, Hae-Ran;Choi, Byung-Hyun;An, Yong-Tae;Baeck, Sung-Hyeon;Roh, Kwang-Chul;Park, Sun-Min
    • Korean Journal of Metals and Materials
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    • v.50 no.9
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    • pp.685-690
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    • 2012
  • Decalcomania is a new method for SOFCs (solid oxide fuel cells) unit cell fabrication. A tight and dense $5{\mu}m$ Yttria-stabilized zirconia (8YSZ) electrolyte layer on anode substrate was fabricated by the decalcomania method. After 8YSZ as the electrolyte starting material was calcined at $1200^{\circ}C$, the particle size was controlled by the attrition mill. The median particle size (D50) of each 8YSZ was $39.6{\mu}m$, $9.30{\mu}m$, $6.35{\mu}m$, and $3.16{\mu}m$, respectively. The anode substrate was coated with decalcomania papers which were made by using 8YSZ with different median particle sizes. In order to investigate the effect of median particle sizes and sintering conditions on the electrolyte density, each sample was sintered for 2, 5 and 10 h, respectively. 8YSZ with a median particle size of $3.16{\mu}m$ which was sintered at $1400^{\circ}C$ for 10 had the highest density. With this 8YSZ, a SOFCs unit cell was manufactured with a $5{\mu}m$ layer by the decalcomania method. Then the unit cell was run at $800^{\circ}C$. The Open Circuit Voltage (OCV) and Maximum power density (MPD) was 1.12 V and $650mW/cm^2$, respectively.

Buckling treatment of piezoelectric functionally graded graphene platelets micro plates

  • Abbaspour, Fatemeh;Arvin, Hadi
    • Steel and Composite Structures
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    • v.38 no.3
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    • pp.337-353
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    • 2021
  • Micro-electro-mechanical systems (MEMS) are widely employed in sensors, biomedical devices, optic sectors, and micro-accelerometers. New reinforcement materials such as carbon nanotubes as well as graphene platelets provide stiffer structures with controllable mechanical specifications by changing the graphene platelet features. This paper deals with buckling analyses of functionally graded graphene platelets micro plates with two piezoelectric layers subjected to external applied voltage. Governing equations are based on Kirchhoff plate theory assumptions beside the modified couple stress theory to incorporate the micro scale influences. A uniform temperature change and external electric field are regarded along the micro plate thickness. Moreover, an external in-plane mechanical load is uniformly distributed along the micro plate edges. The Hamilton's principle is employed to extract the governing equations. The material properties of each composite layer reinforced with graphene platelets of the considered micro plate are evaluated by the Halpin-Tsai micromechanical model. The governing equations are solved by the Navier's approach for the case of simply-supported boundary condition. The effects of the external applied voltage, the material length scale parameter, the thickness of the piezoelectric layers, the side, the length and the weight fraction of the graphene platelets as well as the graphene platelets distribution pattern on the critical buckling temperature change and on the critical buckling in-plane load are investigated. The outcomes illustrate the reduction of the thermal buckling strength independent of the graphene platelets distribution pattern while meanwhile the mechanical buckling strength is promoted. Furthermore, a negative voltage, -50 Volt, strengthens the micro plate stability against the thermal buckling occurrence about 9% while a positive voltage, 50 Volt, decreases the critical buckling load about 9% independent of the graphene platelet distribution pattern.

Effect of Metal Mask Screen on Metal-induced Recombination Current and Solar Cell Characteristics (금속 마스크 스크린이 금속 재결합 전류와 태양전지 특성에 미치는 영향)

  • Lee, Uk Chul;Jeong, Myeong Sang;Lee, Joon Sung;Song, Hee-eun;Kang, Min Gu;Park, Sungeun;Chang, Hyo Sik;Lee, Sang Hee
    • Current Photovoltaic Research
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    • v.9 no.1
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    • pp.6-10
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    • 2021
  • The mesh mask screen, which is generally used for screen printing metallization of silicon solar cell, requires high squeegee pressure and low printing speed. These requirements are acting as a limiting factor in production yield in photovoltaic industries. In order to improve the productivity, a metal mask, which has high durability and high printing speed, has been researched. In this paper, the characteristics of each solar cell, in which electrodes were formed by using a metal mask and a mesh mask, were analyzed through recombination current density. In particular, the metal-induced recombination current density (Jom) representing the recombination of the emitter-metal interface was calculated using the shading method, and the resulting efficiency and open-circuit voltage were analyzed through the diode equation. As a result of analyzing the proportion of the metal-induced recombination current density to the total emitter recombination current density, it was analyzed that the reduction of the metal-induced recombination current density through the metal mask is an important factor in reducing the total recombination current density of the solar cell.

Analysis of Electrochemical Corrosion Resistance of Inconel 625 Thermal Spray Coated Fin Tube of Economizer (Inconel 625 용사코팅된 절탄기 핀튜브의 전기화학적 내식성 분석)

  • Park, Il-Cho;Han, Min-Su
    • Journal of the Korean Society of Marine Environment & Safety
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    • v.27 no.1
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    • pp.187-192
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    • 2021
  • In this study, Inconel 625 was used as a thermal spray material to prevent dew point corrosion damage to the economizer tube, and sealing treatment was performed after applying the arc thermal spray coating technology. Various electrochemical experiments were conducted in the 0.5 wt% sulfuric acid solution to analyze the corrosion resistance of the thermal spray coating (TSC) layer. After the anodic polarization experiment, the degree of corrosion damage was determined through a scanning electron microscope and EDS component analysis. When measuring the open circuit potential, the effect of the sealing treatment was confirmed through stable potential formation of the TSC+sealing treatment (TSC+Sealing). As a result of the anodic polarization experiment, the passivation region was confirmed in TSC and TSC+Sealing, and corrosion resistance was improved as no corrosion damage was observed. In addition, the corrosion resistance of TSC+Sealing was the best when analyzing the corrosion potential and corrosion current density calculated by Tafel analysis.

Effect of Annealing Temperature on the Durability of PEMFC Polymer Membrane (PEMFC 고분자막의 어닐링 온도가 내구성에 미치는 영향)

  • Lee, Mihwa;Oh, Sohyeong;Park, Yujun;Yoo, Donggeun;Park, Kwonpil
    • Korean Chemical Engineering Research
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    • v.60 no.1
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    • pp.7-11
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    • 2022
  • In the membrane forming process of a proton exchange membrane fuel cell (PEMFC), drying and annealing heat treatment processes are required for performance and durability. In this study, the optimal annealing temperature for improving the durability of the polymer membrane was studied. It was annealed in the temperature range of 125~175 ℃, and thermal stability and hydrogen permeability were measured as basic data of durability at each annealing temperature. The electrochemical durability was analyzed by Fenton reaction and open circuit voltage (OCV) holding. The annealing temperature of 165 ℃ was the optimal temperature in terms of thermal stability and hydrogen permeability. In the Fenton reaction, the fluorine emission rate of the membrane annealed at 165 ℃ was the lowest, and the lifespan of the membrane annealed at 165 ℃ was the longest in the OCV holding experiment, confirming that 165 ℃ was the optimal temperature for the durability of the polymer membrane.

Improvement in Performance of Cu2ZnSn(S,Se)4 Absorber Layer with Fine Temperature Control in Rapid Thermal Annealing System (Cu2ZnSn(S,Se)4(CZTSSe) 흡수층의 급속 열처리 공정 온도 미세 조절을 통한 특성 향상)

  • Kim, Dong Myeong;Jang, Jun Sung;Karade, Vijay Chandrakant;Kim, Jin Hyeok
    • Korean Journal of Materials Research
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    • v.31 no.11
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    • pp.619-625
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    • 2021
  • Cu2ZnSn(S,Se)4 (CZTSSe) based thin-film solar cells have attracted growing attention because of their earth-abundant and non-toxic elements. However, because of their large open-circuit voltage (Voc)-deficit, CZTSSe solar cells exhibit poor device performance compared to well-established Cu(In,Ga)(S,Se)2 (CIGS) and CdTe based solar cells. One of the main causes of this large Voc-deficit is poor absorber properties for example, high band tailing properties, defects, secondary phases, carrier recombination, etc. In particular, the fabrication of absorbers using physical methods results in poor surface morphology, such as pin-holes and voids. To overcome this problem and form large and homogeneous CZTSSe grains, CZTSSe based absorber layers are prepared by a sputtering technique with different RTA conditions. The temperature is varied from 510 ℃ to 540 ℃ during the rapid thermal annealing (RTA) process. Further, CZTSSe thin films are examined with X-ray diffraction, X-ray fluorescence, Raman spectroscopy, IPCE, Energy dispersive spectroscopy and Scanning electron microscopy techniques. The present work shows that Cu-based secondary phase formation can be suppressed in the CZTSSe absorber layer at an optimum RTA condition.

Effect of poly-Si Thickness and Firing Temperature on Metal Induced Recombination and Contact Resistivity of TOPCon Solar Cells (Poly-Si 두께와 인쇄전극 소성 온도가 TOPCon 태양전지의 금속 재결합과 접촉비저항에 미치는 영향)

  • Lee, Sang Hee;Yang, Hee Jun;Lee, Uk Chul;Lee, Joon Sung;Song, Hee-eun;Kang, Min Gu;Yoon, Jae Ho;Park, Sungeun
    • Current Photovoltaic Research
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    • v.9 no.4
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    • pp.128-132
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    • 2021
  • Advances in screen printing technology have been led to development of high efficiency silicon solar cells. As a post PERx structure, an n-type wafer-based rear side TOPCon structure has been actively researched for further open-circuit voltage (Voc) improvement. In the case of the metal contact of the TOPCon structure, the poly-Si thickness is very important because the passivation of the substrate will be degraded when the metal paste penetrates until substrate. However, the thin poly-Si layer has advantages in terms of current density due to reduction of parasitic absorption. Therefore, poly-Si thickness and firing temperature must be considered to optimize the metal contact of the TOPCon structure. In this paper, we varied poly-Si thickness and firing peak temperature to evaluate metal induced recombination (Jom) and contact resistivity. Jom was evaluated by using PL imaging technique which does not require both side metal contact. As a results, we realized that the SiNx deposition conditions can affect the metal contact of the TOPCon structure.

Effective Interfacial Trap Passivation with Organic Dye Molecule to Enhance Efficiency and Light Soaking Stability in Polymer Solar Cells

  • Rasool, Shafket;Zhou, Haoran;Vu, Doan Van;Haris, Muhammad;Song, Chang Eun;Kim, Hwan Kyu;Shin, Won Suk
    • Current Photovoltaic Research
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    • v.9 no.4
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    • pp.145-159
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    • 2021
  • Light soaking (LS) stability in polymer solar cells (PSCs) has always been a challenge to achieve due to unstable photoactive layer-electrode interface. Especially, the electron transport layer (ETL) and photoactive layer interface limits the LS stability of PSCs. Herein, we have modified the most commonly used and robust zinc oxide (ZnO) ETL-interface using an organic dye molecule and a co-adsorbent. Power conversion efficiencies have been slightly improved but when these PSCs were subjected to long term LS stability chamber, equipped with heat and humidity (45℃ and 85% relative humidity), an outstanding stability in the case of ZnO/dye+co-adsorbent ETL containing devices have been achieved. The enhanced LS stability occurred due to the suppressed interfacial defects and robust contact between the ZnO and photoactive layer. Current density as well as fill factors have been retained after LS with the modified ETL as compared to un-modified ETL, owing to their higher charge collection efficiencies which originated from higher electron mobilities. Moreover, the existence of less traps (as observed from light intensity-open circuit voltage measurements and dark currents at -2V) are also found to be one of the reasons for enhanced LS stability in the current study. We conclude that the mitigation ETL-surface traps using an organic dye with a co-adsorbent is an effective and robust approach to enhance the LS stability in PSCs.

Design of Compensation Circuits for LED Fault in Constant Current Driving (정전류 구동에서 LED 고장 보상 회로 설계)

  • Lee, Kwang;Jang, Min-Ho
    • The Journal of the Korea institute of electronic communication sciences
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    • v.17 no.1
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    • pp.71-76
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    • 2022
  • Since brightness is proportional to the operating current, a method of connecting several LEDs in series and driving with a constant current source is widely used for driving circuits of LED lights. Because several LEDs are connected in series, if some LEDs open due to a fault, the current path is broken and all other LEDs connected in series are turned off. In this paper, we designed a circuit to solve this problem by connecting a Zener diode having a breakdown voltage of about 0.4V higher than the LED operating voltage in parallel with each LED to create a current bypass in case of LED failure. Through simulations and experiments, it was confirmed that the current of the Zener diode hardly flows when the LED is operating normally, and that the Zener diode stably operates as a current bypass when the LED fails.