• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.9
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• pp.54-58
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• 2007

Development of high performance LTPS TFTs contributed to open up new SOP technology with various digital circuits integrated in display panels. This work introduces the current mode logic(CML) gate design method with which one can replace slow CMOS logic gates. The CML inverter exhibited small logic swing, fast response with high power consumption. But the power consumption became compatible with CMOS gates at higher clock speed. Due to small current values in CML, layout area is smaller than the CMOS counterpart even though CML uses larger number of devices. CML exhibited higher noise immunity thanks to its non-inverting and inverting outputs. Multi-input NAND/AND and NOR/OR gates were implemented by the same circuit architecture with different input confirugation. Same holds for MUX and XNOR/XOR CML gates. We concluded that the CML gates can be designed with few simple circuits and they can improve power consumption, chip area, and speed of operation.

• Journal of Hydrogen and New Energy
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• v.23 no.5
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• pp.513-520
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• 2012

The electrochemical reaction of refuse derived fuel (RDF) and refuse plastic/paper fuel (RPF) was investigated in the direct carbon fuel cell (DCFC) system. The open circuit voltage (OCV) of RPF was higher than RDF and other coals because of its thermal reactive characteristic under carbon dioxide. The thermal reactivity of fuels was investigated by thermogravimetric analysis method. and the reaction rate of RPF was higher than other fuels. The behavior of all sample's potential was analogous in the beginning region of electrochemical reactions due to similar functional groups on the surface of fuels analyzed by X-ray Photoelectron Spectroscopy experiments. The potential level of RDF and RPF decreased rapidly comparing to coals in the next of the electrochemical reaction because the surface area and pore volume investigated by nitrogen gas adsorption tests were smaller than coals. This characteristic signifies the contact surface between electrolyte and fuel is restricted. The potential of fuels was maintained to the high current density region over 40 $mA/cm^2$ by total carbon component. The maximum power density of RDF and RPF reached up to 45~70% comparing to coal. The obvious improvement of maximum power density by increasing operating temperature was observed in both refuse fuels.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.34 no.1A
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• pp.27-33
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• 2009

This paper proposes transmit power control techniques with fading channel prediction scheme based on recurrent neural network for high-speed mobile communication systems. The operation result of recurrent neural network which is derived interpretively solves complexity problems of neural network circuit, and channel gain of multiple transmit antenna is derived with maximum ratio combining(MRC) by using the operation result, and this channel gain control transmit power of each antenna. simulation results show that proposed method has a outstanding performance compared to method that is not to be controlled power based on channel prediction. Most of legacy studies are for robust receive technique of fading signals or channel prediction of fading signals limited low-speed mobility, but in open loop Power control, proposed channel prediction method decrease system complexity with removal of fading effect in transmitter.

• Journal of the Korean Electrochemical Society
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• v.9 no.3
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• pp.118-123
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• 2006

Degradation of polymer electrolyte membrane fuel cell (PEMFC) that is facilitated by on/off cycles is one of the most important issues for commercialization of fuel cell vehicles. When a PEMFC stack is shut down, residual hydrogen and induce high voltage equivalent to open circuit voltage to the cathode side that might cause sintering of Pt catalyst and facilitate formation of hydrogen peroxide at the anode side that might decompose $Nafionc\'{A}$ membrane. In this study, degradation of PEMFC exposed to repetitive on/off cycles was investigated by measuring i-V characteristics, ac impedance, cyclic voltammograms, gas leak, cross-sectional SEM images, and TEM images. To prevent degradation of PEMFC caused by the residual gases, hydrogen was removed from anode gas channel by gas-purging and by using a dummy resistance, that were found to be a very effective method.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.10
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• pp.8-17
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• 2008

This paper presents a stable lighting method for HID lamp for ship from initial discharging current limit with discharging voltage control. The output voltage of the proposed control scheme is boosted for ignition, and the charging voltage is decreased by the resistor discharging. The proposed controller fires the initial discharge at the designed discharging voltage to limit the discharge current. After the discharging, constant current controller is used for brightness in steady state. The proposed control scheme can limit the initial discharge current using the starting point control without a complex voltage controller. so it can improve the life-time of HID lamp and get a stable discharge from restricted the initial discharge current. In order to improve the protection of the system, a simple instantaneous error detecting circuit for open state and short state of HID lamp is used. The proposed error detecting of HID lamp can protect the power system of lamp control. The effectiveness of the proposed controller is verified from the experiments of practical 2.5[kW] HID search light for ship.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.10
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• pp.665-669
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• 2015

We investigated and compared two methods of in-situ oxidation and chemical etching treatment (CET) to remove the boron rich layer (BRL). The BRL is generally formed during boron doping process. It has to be controlled in order not to degrade carrier lifetime and reduce electrical properties. A boron emitter is formed using $BBr_3$ liquid source at $930^{\circ}C$. After that, in-situ oxidation was followed by injecting oxygen of 1,000 sccm into the furnace during ramp down step and compared with CET using a mixture of acid solution for a short time. Then, we analyzed passivation effect by depositing $Al_2O_3$. The results gave a carrier lifetime of $110.9{\mu}s$, an open-circuit voltage ($V_{oc}$) of 635 mV at in-situ oxidation and a carrier lifetime of $188.5{\mu}s$, an $V_{oc}$ of 650 mV at CET. As a result, CET shows better properties than in-situ oxidation because of removing BRL uniformly.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.10
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• pp.2066-2070
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• 2009

A voltage controlled attenuator using a PIN diode and two resistors of the $\pi$-type fixed attenuator is described in this paper. The proposed variable attenuator operating for a fixed attenuation range has a good input VSWR and a low intermodulation signal. For the low phase shift, a PIN diode is connected with open stub for the purpose of phase compensation. The stub for phase compensation is calculated by the Deloach method and the related circuit theory. This attenuator is easily fabricated on the microstrip and can be normally used in fine control circuits within small attenuation range. The fabricated attenuator for 2110~2170 MHz frequency band has about 4 dB of an attenuation range, $2^{\circ}$ of phase variance, and -20 dB of S11 according to the input voltage from 0 to 2.7 V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.222-222
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• 2007

RF circuit을 구현하는데 있어서 기판의 전기적 특성을 정확하게 아는 것은 원하는 결과를 추출하기 위해 매우 중요하다. 본 연구에서는 현재 사용되고 있는 PI 기판의 전기적인 특성인 유효 유전율과 loss tangent 값을 T-resonator률 이용해 정확하게 측정하고자 했다. T-resonator는 microstrip 구조로 구현 되었으며 conductor material은 Cu를 사용하였다. PI 기판의 두께는 25um, Cu의 두께는 PI 기판의 종류에 따라 12um 와 18um, T-resonator line width는 50um로 구현하였다. 또한 공진 주파수에 따라 stub 길이가 다른 10개의 T-resonator를 제작하였다. PI 기판의 유효 유전율을 구하기 위해 stub 길이의 open-end effect와 T-junction effect를 고려하였으며 수식을 통해 정확한 유효 유전률을 추출하였다. 또한 PI 기판의 loss tangent 추출에 필요한 dielectric loss를 추출하기 위해 unload quality factor를 분석하였다. Unload quality factor는 dielectric loss, conductor loss, radiation loss를 구성되며 conductor loss와 radiation loss를 수식에 의해 구하고 dielectric loss를 추출 하였다. 추출 된 dielectric loss를 통해 각각의 T-resonator의 loss tangent 값을 구하였다. T-resonator를 이용한 PI 기판의 측정은 비교적 복잡한 수식에 의해 이루어지지만 정확한 data를 얻을 수 있고 다른 재료의 전기적 특성을 추출하는데 응용이 가능하다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.7
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• pp.571-574
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• 2010

Surface recombination loss should be reduced for high efficiency of solar cells. To reduce this loss, the BSF (back surface field) is used. The BSF on the back of the p-type wafer forms a p+layer, which prevents the activity of electrons of the p-area for the rear recombination. As a result, the leakage current is reduced and the rear-contact has a good Ohmic contact. Therefore, the open-circuit-voltage (Voc) and fill factor (FF) of solar cells are increased. This paper investigates the formation of the rear contact process by comparing aluminum-paste (Al-paste) with pure aluminum-metal(99.9%). Under the vacuum evaporation process, pure aluminum-metal(99.9%) provides high conductivity and low contact resistance of $4.2\;m{\Omega}cm$, but It is difficult to apply the standard industrial process to it because high vacuum is needed, and it's more expensive than the commercial equipment. On the other hand, using the Al-paste process by screen printing is simple for the formation of metal contact, and it is possible to produce the standard industrial process. However, Al-paste used in screen printing is lower than the conductivity of pure aluminum-metal(99.9) because of its mass glass frit. In this study, contact resistances were measured by a 4-point probe. The contact resistance of pure aluminum-metal was $4.2\;m{\Omega}cm$ and that of Al-paste was $35.69\;m{\Omega}cm$. Then the rear contact was analyzed by scanning electron microscope (SEM).

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.75.2-75.2
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• 2013

Atomic layer deposition (ALD), utilizing self-limiting surface reactions, could offer promising perspectives for future efficient energy conversion devices. The capabilities of ALD for surface/interface modification and construction of novel architectures with sub-nanometer precision and exceptional conformality over high aspect ratio make it more valuable than any other deposition methods in nanoscale science and technology. In the context, a variety of researches on fabrication of active materials for energy conversion applications by ALD are emerging. Among those materials, one-dimensional nanotubular titanium dioxide, providing not only high specific surface area but also efficient carrier transport pathway, is a class of the most intensively explored materials for energy conversion systems, such as photovoltaic cells and photo/electrochemical devices. The monodisperse, stoichiometric, anatase, TiO2 nanotubes with smooth surface morphology and controlled wall thickness were fabricated via low-temperature template-directed ALD followed by subsequent annealing. The ALD-grown, anatase, TiO2 nanotubes in alumina template show unusual crystal growth behavior which allows to form remarkably large grains along axial direction over certain wall thickness. We also fabricated dye-sensitized solar cells (DSCs) introducing our anatase TiO2 nanotubes as photoanodes, and studied the effect of blocking layer, TiO2 thin films formed by ALD, on overall device efficiency. The photon convertsion efficiency ~7% were measured for our TiO2 nanotubebased DSCs with blocking layers, which is ~1% higher than ones without blocking layer. We also performed open circuit voltage decay measurement to estimate recombination rate in our cells, which is 3 times longer than conventional nanoparticulate photoanodes. The high efficiency of our ALD-grown, anatase, TiO2 nanotube-based DSCs may be attributed to both enhanced charge transport property of our TiO2 nanotubes photoanode and the suppression of recombination at the interface between transparent conducting electrode and iodine electrolytes by blocking layer.