• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.12
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• pp.198-208
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• 1995

BiCMOS circuit consist of CMOS part which constructs logic function, and bipolar part which drives output load. Test to detect stuck-open faults in BiCMOS circuit is important, since these faults do sequential behavior and are represented as transition faults. In this paper, proposes a method for efficiently detecting transistor stuck-open faults in BiCMOS circuit by transforming them into slow-to=rise transition and slow-to-fall transition. In proposed method, BiCMOS circuit is transformed into equivalent gate-level circuit by dividing it into pull-up part which make output 1, and pull-down part which make output 0. Stuck-open faults in transistor are modelled as transition fault in input line of gate level circuit which is transformed from given circuit. Faults are detceted by using pull-up part gate level circuit when expected value is '01', or using pull-down part gate level circuit when expected value is '10'. By this method, transistor stuck-open faults in BiCMOS circuit are easily detected using conventional gate level test generation algorithm for transition fault.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.280-280
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• 2010

태양전지의 효율을 증가시키는 방법에는 표면 패시베이션, 접촉면적의 가변, back contact의 두께 가변 등이 있다. 특히, back contact 두께의 가변을 통하여 open circuit voltage의 감소를 최소화 할 수 있을 것이라고 전망 되고 있다. open circuit voltage 은 회로가 개방된 상태로, 무한대의 임피던스가 걸린 상태에서 빛을 받았을 때 태양전지의 양단에 전위차가 형성된다. 본 연구에서는 back contact 두께 가변에 따른, open circuit voltage의 변화를 확인하고 분석하는 것에 그 일차적인 초점을 두었다. 또한, open circuit voltage 뿐만 아니라, short circuit current density, fill factor, series resistance 등의 분석을 하였으며, efficiency를 계산하여 back contact 두께의 가변에 따른 소자 특성의 변화 분석을 통하여 최적화된 back contact위 두께를 연구하였다. 접촉면적에 따른 소자의 성능 변화는 후면 $SiN_X$ 70nm가 open circuit voltage를 15mV ~ 20mV 감소시키는 것을 확인 할 수 있었다. 그 이유는 $SiN_X$가 너무 두꺼우면 BSF 덜 형성되기 때문이다. 최종적으로 $SiN_X$ 두께를 얇게하면 open circuit voltage 의 감소를 최소화 할 수 있을 것이라는 판단을 할 수 있다. 이에, back contact인 $SiN_X$ 두께 가변에 따른 open circuit voltage의 변화를 확인하였다. $SiN_X$ 두께가 증가함에 따라, Positive charges 와 Hydrogen 함유량이 증가하며, 이에 BSF 두께 감소하였다. 또한, $SiN_X$ 두께가 감소함에 따라 Doping barrier로서 역할을 못하게 되어 후면에 n+층 형성되어 open circuit voltage가 급격히 하락하였다. 본 연구에서는 back contact인 $SiN_X$ 두께를 10nm, 30nm, 50nm, 80nm 로 가변하며 실험을 진행하였다.

• Journal of applied mathematics & informatics
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• v.39 no.5_6
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• pp.805-811
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• 2021

Currently, batteries use commonly as energy sources for mobile electric devices. Due to the high density of energy, the energy storage state of a battery is very important information. To know the battery's energy storage state, it is necessary to find out the open state voltage of the battery. The open state voltage calculates with a mathematical model, but the computation of the real time state is complicated and requires many calculations. Therefore, the state observer designs to estimate in real time the battery open-circuit voltage as disturbance including model error. Using the estimated open voltage and applying it to the state estimation algorithm, we can estimate the charge. In this study, we first estimate the open-circuit voltage and design an estimation algorithm for estimating the state of battery charge. This includes errors in the system model and has a robust characteristic to noise. It is possible to increase the precision of the charge state estimation.

• Cement Symposium
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• no.1
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• pp.50-55
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• 1973

Improvement of grinding efficiency about open circuit grinding mill in cement production was investigated and the results were as follows; 1. Controlled the steel ball by charging ratio. 2. Raised the slot ratio from 3$\%$ to 4.5$\%$

• Journal of the Korean Ceramic Society
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• v.47 no.2
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• pp.195-198
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• 2010

It has been considered to apply GDC ($Gd_{0.1}Ce_{0.9}O_{1-X}$) for low-temperature SOFC electrolytes because it has higher ionic conductivity than YSZ at low temperature. However, open circuit voltage with using GDC ($Gd_{0.1}Ce_{0.9}O_{1-X}$) electrolyte in SOFCs, becomes lower than using YSZ (8 mol% Yttria stabilized Zirconia) electrolyte because GDC has electronic conductivity. In this work, the effect of changing GDC electrolyte thickness on the open circuit voltage has been investigated. Ni-GDC anode-supported unit cells were fabricated as follows. Mixed NiO-GDC powders were pressed and pre-sintered at $1200^{\circ}C$. And then, GDC electrolyte material was dip-coated on the anode and sintered at $1400^{\circ}C$. Finally the LSCF-GDC cathode material was screen-printed on the electrolyte and sintered at $1000^{\circ}C$. Electrolyte thickness was controlled by the number of dip-coating times. Open circuit voltage was measured depending on electrolyte thickness at $650^{\circ}C$ and found that the thicker GDC electrolyte was, the better OCV was.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.1
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• pp.182-187
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• 2015

In the three-phase power system, when any one-phase or two-phases is open-phase, the unbalanced current flows and the single-phase power supplies to three-phase loads. Specially, motor coil and transformer coil receive over-current. As a result, great damage as well as electrical fire can occur to the power system. In order to improve these problems, this paper proposes that an open-phase detection device is designed by a new algorithm using electric potential difference between the resultant voltage of neutral point and ground, and a control circuit topology of open-phase protector is composed of highly efficient semiconductor devices. It improves response speed and reliability. The control algorithm circuit also operates the cut-off of a conventional residual current protective device (RCD) which flows an enforced leakage current to ground wire at open-phase accident. Furthermore, time delay circuit is added to prevent the incapable operation of open-phase protector about instantaneous open-phase not open-phase fault. The time delay circuit improves more reliability.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.49 no.2
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• pp.85-92
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• 2000

30 kVA rotating-field type Super-Conducting Generator is built and tested with intensive FE(Finite Element) analysis. The generator is driven by VVVF inverter-fed induction motor. Open Circuit Characteristic(OCC) and Short Circuit Characteristic(SCC) are presented in this paper. Also, the test result under the light load(up to 3.6 kW) are given. From the design stage, 2-D FE analysis coupled with the external circuit has been performed. The external circuit includes the end winding resistance and reactance as well as two dampers. When compared with the test data, the FE analysis results show a very good agreement.

• Current Optics and Photonics
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• v.5 no.2
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• pp.173-179
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• 2021

The electroluminescence (EL) intensities of GaN-based light-emitting diodes (LEDs) are estimated based on their photoluminescence (PL) properties. The PL intensity obtained under open-circuit conditions is divided into two parts: the PL intensity under a forward bias lower than the optical turn-on voltage, and the difference between the PL intensities under open-circuit conditions and under forward bias. The luminescence induced by photoexcitation under a constant forward bias lower than the optical turn-on voltage is primarily the PL from the excited area of the LED. In contrast the intensity difference, obtained by subtracting the PL intensity under the forward bias from that under open-circuit conditions, contains the EL induced by the photocarriers generated during photoexcitation. In addition, a reverse photocurrent is generated during photoexcitation under constant forward bias across the LED, and can be correlated with the PL-intensity difference. The relationship between the photocurrent and PL-intensity difference matches well the relationship between the injection current and EL intensity of LEDs. The ratio between the photocurrent generated under a bias and the short-circuit current is related to the ratio between the PL-intensity difference and the PL intensity under open-circuit conditions. A relational expression consisting of the ratios, short-circuit current, and PL under open-circuit conditions is proposed to estimate the EL intensity.

• Journal of Satellite, Information and Communications
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• v.11 no.3
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• pp.114-118
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• 2016

In this paper, we present the advanced open collector circuit, interface circuit between aerospace electronics. Satellite is composed of a number of electronics, which were provided from various manufacturers. Each company manufactured its own electronics for satellite using its heritage and requirements for their electronics. Therefore each electronics may use different internal supplies. It make a problem between electronics because the supply is different from other electronics, such as the increasing of power dissipation because of the static current and the mismatch of interface voltage, the offset. Proposed circuit can reduce the static current and rising time, and also decrease the useless power dissipation caused by the static current for open collector circuit

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.9 no.4
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• pp.93-102
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• 1995

The purpose of this paper is to analyze the streaming electrification mechanism (SEM) generated in UHV transformer. This experiment used Couette Charger and interpreted the mechanism hydromechanically and electromagnetically. This work estimated the turbulent core density ($\rho$o) by measuring the short circuit current (isc) and the open circuit voltage (νoc) generated in Couette Charger and also studied the changes of the short circuit (isc), the open circuit voltage (νoc), the turbulent core density ($\rho$o) and the conductivity ($\sigma$) with adding BTA to restrain streaming electrification. as a result adding BTA increased the conductivity of oil and decreased the turbulent core density($\rho$o).