• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.1
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• pp.40-45
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• 2015

Electrode systems: a protrusion on conductor (POC), a protrusion on enclosure (POE), a crack in epoxy plate and a free particle (FP) were fabricated to simulate insulation defects in a gas insulated switchgear (GIS). $SF_6$ gas was filled in the electrode systems by 3 bar and/or 5 bar, respectively. Partial discharge (PD) pulses were detected through a $50{\Omega}$ non-inductive resistor. A calibration test was carried out according to IEC 60270, and the sensitivity was 0.25 pC/mV. PD pulses were distributed in the phase of $50^{\circ}{\sim}135^{\circ}$ and over 95% of them existed in the phase of $55^{\circ}{\sim}120^{\circ}$ for the POC. PD pulses were distributed in the phase of $230^{\circ}{\sim}310^{\circ}$ and over 90% of them existed in phase of $220^{\circ}{\sim}300^{\circ}$ for the POE. PD pulses occurred in the phase of $40^{\circ}{\sim}60^{\circ}$ and $220^{\circ}{\sim}300^{\circ}$ for the crack, and pulse counts were 25% higher in negative polarity than in positive polarity. PD pulses were distributed in every phase unlike to other three electrode systems and the peak magnitude was measured at $118^{\circ}$ and $260^{\circ}$ for the FP. As described above, PD pulses were observed in positive polarity for the POC, in negative one for the POE, in both one for the crack and the FP. In conclusion, it is expected that the identification rate of defect type can be improved by considering the polarity ratio of PD pulses on the PRPDA method.

• The korean journal of orthodontics
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• v.14 no.2
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• pp.203-215
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• 1984

This experiment was performed to explore the effect of electric currents and orthodontic forces on bone $PGE_2$ content and orthodontic tooth movement on cats. Stainless steel electrodes were connected a power pack consisting of five miniature batteries, a transistor, and a resistor. The current $(10{\pm}2{\mu}A)$ was provided by a constant source encased in a palatal acrylic plate. In first experiment, the cathode was placed mesial to the right maxillary canine tooth and the anode was positioned distal to the tooth, Sham electrodes were placed new the left cuspid, to serve as control. Nine cats were divided into three groups evenly. Groups of three animals were treated with electric currents only-for 1, 3 and 7 days, respectively. In second experiment, electric currents and the orthodontic forces of about 80 gm were applied to the right maxillary canine, and the orthodontic forces only were applied to the left maxillary canine. 3 groups of three cats each were treated in this experiment-for 1, 3 and 7 days, respectively. Alveolar bone samples were obtained from sites of tension and compression as well as from contralateral sites. Bone samples were extracted by homogenization in $40\%$ ethanal. The supernatant partitioned twice with 2 volumes of petroleum ether to remove neutral lipids and the aqueous supernatant partitioned in ethyl acetate. After drying the solvent, $PGE_2$ was measured by radioimmunoassay technique. The obtained results were as follows. 1. Teeth treated with combined force and electricity moved faster than those treated with force alone. 2. Alveolar bone $PGE_2$ content of electric stimulation was increased at both electrodes. 3. Alveolar bone $PGE_2$ content of mechanical stimulation at compression sites was gradually increased at all time period. At tension site, $PGE_2$ content increased after 1 day of mechanical stimulation remained elevated at all time period. 4. Alveolar bone $PGE_2$ content of compression sites was increased more than that of tension sites from mechanical stimulation as well as electrical stimulation.

• Composites Research
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• v.13 no.5
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• pp.50-59
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• 2000

In this paper, two methods to suppress flutter of the composite panel are examined. First, in the active control method, a controller based on the linear optimal control theory is designed and control input voltage is applied on the actuators and a PZT is used as actuator. Second, a new technique, passive suppression scheme, is suggested for suppression of the nonlinear panel flutter. In the passive suppression scheme, a shunt circuit which consists of inductor-resistor is used to increase damping of the system and as a result the flutter can be attenuated. A passive damping technology, which is believed to be more robust suppression system in practical operation, requires very little or no electrical power and additional apparatuses such as sensor system and controller are not needed. To achieve the great actuating force/damping effect, the optimal shape and location of the actuators are determined by using genetic algorithms. The governing equations are derived by using extended Hamilton's principle. They are based on the nonlinear von Karman strain-displacement relationship for the panel structure and quasi-steady first-order piston theory for the supersonic airflow. The discretized finite element equations are obtained by using 4-node conforming plate element. A modal reduction is performed to the finite element equations in order to suppress the panel flutter effectively and nonlinear-coupled modal equations are obtained. Numerical suppression results, which are based on the reduced nonlinear modal equations, are presented in time domain by using Newmark nonlinear time integration method.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.9
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• pp.42-51
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• 2017

This paper deals with the power supply facility providing wireless power transmission for a type of electric vehicles called the on-line electric vehicle(OLEV) and proposes optimal protection coordination methods which analyze the faultsin the 60Hz and 20kHz bands using PSCAD/EMTDC, which is the typical commercial software for the distribution system. The simulation results show that the proposed methods can reduce the fault current by introducing an NGR (Neutral Ground Resistor) in the 60Hz band and prevent the malfunctioning of the protection device by installing a CT in the neutral wire in the 20kHz band when a ground fault occurs.

• Journal of Biomedical Engineering Research
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• v.25 no.5
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• pp.335-342
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• 2004

This paper describes a trans-admittance scanner for breast cancer detection. A FPGA-based sinusoidal waveform generator produces a constant voltage. The voltage is applied between a hand-held electrode and a scan probe placed on the breast. The scan probe contains an 8x8 array of electrodes that are kept at the ground potential. Multi-channel precision digital ammeters using the phase-sensitive demodulation technique were developed to measure the exit current from each electrode in the array. Different regions of the breast are scanned by moving the probe on the breast. We could get trans-admittance images of resistor and saline phantoms with an anomaly inside. The images provided the information on the depth and location of the anomaly. In future studies, we need to improve the accuracy through a better calibration method. We plan to test the scanner's ability to detect a cancer lesion inside the human breast.

• Journal of Sensor Science and Technology
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• v.9 no.1
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• pp.1-8
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• 2000

One of today's very critical and sensitive accurate accelerometer which can be used higher temperature than $200^{\circ}C$ and corrosive environment, is particularly demanded for automotive engine. Because silicon is a material of large temperature dependent coefficient, and the piezoresistors are isolated with p-n junctions, and its leakage current increase with temperature, the performance of the silicon accelerometer degrades especially after $150^{\circ}C$. In this paper, The temperature characteristic of a accelerometer using silicon on insulator (SOI) structure is studied theoretically, and compared with experimental results. The temperature coefficients of sensitivity and offset voltage (TCS and TCO) are related to some factors such as thermal residual stress, and are expressed numerically. Thermal stress analysis of the accelerometer has also been carried out with the finite-element method(FEM) simulation program ANSYS. TCS of this accelerometer can be reduced to control the impurity concentration of piezoresistors, and TCO is related to factors such as process variation and thermal residual stress on the piezoresistors. In real packaging, The avarage thermal residual stress in the center support structure was estimated at around $3.7{\times}10^4Nm^{-2}^{\circ}C^{-1}$ at sensing resistor. The simulated ${\gamma}_{pT}$ of the center support structure was smaller than one-tenth as compared with that of the surrounding support structure.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.6
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• pp.1099-1103
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• 2007

TFT's have been intensively researched for possible electronic and display applications. Through tremendous engineering and scientific efforts, a-Si:H TFT fabrication process was greatly improved. In this paper, the reason on defects occurring at a-Si:H TFT fabrication process is analyzed and solved, so a-Si:H TFT's yield is increased and reliability is improved. The a-Si:H TFT of this paper is inverted staggered type TFT. The gate electrode is formed by patterning with length of $8{\mu}m{\sim}16{\mu}m$ and width of $80{\sim}200{\mu}m$ after depositing with gate electrode (Cr). We have fabricated a-SiN:H, conductor, etch-stopper and photo-resistor on gate electrode in sequence, respectively. We have deposited n+a-Si:H, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-slower pattern. The NPR layer by inverting pattern of upper Sate electrode is patterned and the n+a-Si:H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si:H TFT made like this has problems at photo-lithography process caused by remains of PR. When sample is cleaned, this remains of PR makes thin chemical film on surface and damages device. Therefor, in order to improve this problem we added ashing process and cleaning process was enforced strictly. We can estimate that this method stabilizes fabrication process and makes to increase a-Si:H TFT's yield.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.12
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• pp.40-48
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• 2013

This paper presents multi-channel transimpedance amplifier(TIA) arrays in short-range LADAR systems for unmanned vehicles, by using a 0.18um CMOS technology. Two $4{\times}4$ channel TIA arrays including a voltage-mode INV-TIA and a current-mode CG-TIA are introduced. First, the INV-TIA consists of a inverter stage with a feedback resistor and a CML output buffer with virtual ground so as to achieve low noise, low power, easy current control for gain and impedance. Second, the CG-TIA utilizes a bias from on-chip bandgap reference and exploits a source-follower for high-frequency peaking, yielding 1.26 times smaller chip area per channel than INV-TIA. Post-layout simulations demonstrate that the INV-TIA achieves 57.5-dB${\Omega}$ transimpedance gain, 340-MHz bandwidth, 3.7-pA/sqrt(Hz) average noise current spectral density, and 2.84mW power dissipation, whereas the CG-TIA obtains 54.5-dB${\Omega}$ transimpedance gain, 360-MHz bandwidth, 9.17-pA/sqrt(Hz) average noise current spectral density, and 4.24mW power dissipation. Yet, the pulse simulations reveal that the CG-TIA array shows better output pulses in the range of 200-500-Mb/s operations.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.10 s.352
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• pp.90-97
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• 2006

We report our research work on the millimeter-wave broadband amplifier integrating the shunt peaking technology with the cascode configuration. The millimeter-wave broadband cascode amplifier on MIMIC technology was designed and fabricated using $0.1{\mu}m\;{\Gamma}-gate$ GaAs PHEMT, CPW, and passive library. The fabricated PHEMT has shown a transconductance of 346.3 mS/mm, a current gain cut off frequency ($f_T$) of 113 GHz, and a maximum oscillation frequency ($f_{max}$) of 180 GHz. To prevent oscillation of designed cascode amplifier, a parallel resistor and capacitor were connected to drain of common-gate device. For expansion of the bandwidth and flatness of the gain, we inserted the short stub into bias circuits and the compensation transmission line between common-source device and common-gate device, and then their lengths were optimized. Also, the input and output stages were designed using the matching method to obtain the broadband characteristic. From the measurement, we could confirm to extend bandwidth and flat gain by integrating the shunt peaking technology with the cascode configuration. The cascode amplifier shows the broadband characteristic from 19 GHz to 53.5 GHz. Also, the average gain of this amplifier is about 6.5 dB over the bandwidth.

• Journal of Navigation and Port Research
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• v.28 no.3
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• pp.213-219
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• 2004

In this paper, a LNA(Low Noise Amplifier) has been developed, which is operating at L-band i.e., 1452∼1492 MHz for satellite DAB(Digital Audio Brcadcasting) receiver. The LNA is designed to improve input and output reflection coefficient and VSWR(Voltage Standing Wave Ratio) by balanced amplifier. The LNA consists of low noise amplification stage and gain amplification stage, which make a using of GaAs FET ATF-10136 and VNA-25 respectively, and is fabricated by hybrid method. To supply most suitable voltage and current, active bias circuit is designed Active biasing offers the advantage that variations in $V_P$ and $I_{DSS}$ will not necessitate a change in either the source or drain resistor value for a given bias condition. The active bias network automatically sets $V_{gs}$ for the desired drain voltage and drain current. The LNA is fabricated on FR-4 substrate with RF circuit and bias circuit, and integrated in aluminum housing. As a reults, the characteristics of the LNA implemented more than 32 dB in gain. 0.2 dB in gain flatness. lower than 0.95 dB in noise figure, 1.28 and 1.43 each input and output VSWR, and -13 dBm in $P_{1dB}$.