• Food Science and Biotechnology
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• 제15권3호
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• pp.409-412
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• 2006

Interrelationship between results of large deformation (texture profile analysis, TPA) test and small deformation (creep) test on ohmic heated surimi gel, water-bath heated surimi gel, and commercial fish gel products (kamabokos) was examined. Creep test revealed ohmic heated gels have higher elastic modulus and viscosity values than water-bath heated ones, with differences of elastic modulus and viscosity between ohmic and water-bath heated gels being 18 and 28.5%, respectively. These differences were reflected in the higher hardness, cohesiveness, and chewiness values of ohmic heated gels in TPA. In TPA test, the differences of hardness and chewiness between ohmic heated gel and water-bath heated gel were 29.3 and 38.7%, respectively. It was concluded that with proper experimental design, the small deformation creep test which gives molecular level deformation data can be related to the large deformation TPA test indicating the sensory textural properties.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.168-168
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• 2012

본 연구에서는 Molybdenum oxide (MoOx)-doped 4,4',4"-tris[2-naphthyl(amino)] triphenylamine(2-TNATA)의 P-doping에 의한 hole ohmic contact과 fullerene (C60)/lithium (LiF)의 electron ohmic contact에 의한 All Ohmic contact를 이용한 유기 발광 다이오드 (OLEDs)의 광저항 특성의 향상을 설명한다. 이 소자의 성능은 MoOx-doped 2-TNATA의 두께와 도핑농도에 큰 영향을 받는다. glass/ITO/MoOx-doped 2-TNATA (100 nm)/Al 구조의 소자에서 MoOx-doped 2-TNATA 도핑 농도가 25%에서 75%로 증가할수록 hole only device의 hole ohmic 특성이 향상됐다. 그 이유는 p-type doping effect 때문이다. 또한 photoemission spectra 분석결과, p-type doping effect는 hole-injecting barrier 높이는 낮추고, hole conductivity는 향상되었다. 이것은 2-TNATA에 도핑된 MoOx의 전하전송 콤플렉스의 형성으로 hole carrier의 수가 증가하여 발생되었다. MoOx-doped 2-TNATA의 hole ohmic contact과 fullerene (C60)/lithium fluoride (LiF)의 electron ohmic contact 으로 구성된 glass/ITO/MoOx-doped 2-TNATA (75%, 60 nm)/NPB (10 nm)/Alq3 (35 nm)/C60 (5 nm)/LiF (1 nm)/Al (150 nm)의 소자구조는 6,4V에서 127,600 cd/m2 최대 휘도와 약 1,000 cd/m2에서 4.7 lm/W의 높은 전력 효율을 보여준다.

• 한국축산식품학회지
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• 제32권3호
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• pp.293-300
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• 2012

This study investigated the effects of a low-voltage ohmic heating process (2.5 and 3.8 V/cm) on the thawing characteristics and NaCl diffusion of pork. The thawing rate of pork was dependent on the applied voltages and brine salinities, and few differences were obtained in pork quality parameters (color, water-holding capacity, and shear force) regarding the different treatments. The NaCl concentration of pork after ohmic thawing was higher than that following brine-immersion thawing, however, the NaCl diffusion did not differ from when fresh meat was immersed in brine. For application of the ohmic process in fresh pork, various ohmic pulses were generated in order to prevent the meat from overheating, and the results indicated that the ohmic process was a better way to enhance NaCl diffusion compared with immersing pork at high temperature. Although the mechanisms involved in NaCl diffusion at low-voltage electric field strength were unclear, the present study demonstrated that the ohmic process has a potential benefit in the application of meat processing.

• 한국식품영양학회지
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• 제32권4호
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• pp.304-311
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• 2019

Ohmic heating is a heating method based on the principle when an electrical current passes through food. Since this method is internal, electrical current damage occurred during heating treatment. The results of ohmic heated starch's external structure, X-ray diffraction, DSC analysis and RVA were differed from those of conventional heating at the same temperature. Several starches changed more rigid by structure re-aggregation. This change in starch was caused by change of physical, chemical, rheological property. The rheology of ohmic heated potato and corn starch of different heated methods were compared with chemically modified starch. After gelatinization, sample starch suspension (2%, 3%) measured flow curves by rheometer. Cross-linked chemically modified starch's shear stress was decreased with degree of substitution reversibly. Ohmic heated more dramatic, at $60^{\circ}C$. Potato starch's shear stress was less than commercial high cross-linked modified starch. Flow curves of potato starches measured at $4^{\circ}C$, $10^{\circ}C$, $20^{\circ}C$. Showed that Ohmic heated potato starch's shear stress ranging between $4^{\circ}C$ and $20^{\circ}C$ was narrower than modified starch. According to this study, ohmic heated potato starch can be used by decreasing viscosity agent like cross-linked modified starch.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.338-341
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• 1997

According to reports, it is impossible to make Ohmic Contact with high resistivity p type CdTe or CdZnTe semiconductor theoretically. But it is in need of making Ohmic Contact to fabricate semiconductor radiation detector By electroless deposition method using gold chloride solution, we made Ohmic Contact of Au and p-Cd$_{80}$Zn$_{20}$Te which grown by High Presure Bridgman Method in Aurora Technologies Corporation. We investigated the interface with Rutherford Backscattering Spectrometry and Auger electron spectroscopy. And we evaluated the degree of Ohmic Contact for the Au/CdZnTe interface by the I/V characteristic curve. As a result, we concluded that it showed excellent Ohmic Contact property by tunneling mechanism through the interface.e.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.103-104
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• 1998

GaN is a ppromising materials fot applications in the blue/ultraviolet (UV) light emitting diodes (LEDs)[1] and laser diodes (LDs) [2] High quality ohmic contacts are very critical to these applications since the qualities of ohmic contact system pplay an impportant roles in the high efficient device opperations. For the n-GaN there have been many repports about ohmic contacts and the sppecific contact resistance were as low as from 10-8$\Omega$cm2 However for the ohmic contacts on pp-GaN much fewer study were repported and the sppecific contact resistivity was much lower than of n-GaN. In this ppapper we repport a new Ni/ppt/Au metallization scheme and discuss the mechanism of ohmic formation

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1379-1380
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• 2007

본 연구에서는 XeCl 엑시머 레이저를 통해서 GaN를 선별적으로 고농도 도핑 할 수 있는 새로운 방법을 제안했으며, 제안된 방법에 의해 제작된 소자는 낮은 ohmic contact 저항을 나타내었다. 증착된 실리콘 film에 XeCl 엑시머 레이저를 사용하여 GaN 위에 sputtering 함으로써 조사하였으며 레이저에 의해 조사된 영역에는 ohmic contact을 형성하였다. 기존 방법에 의한 ohmic contact 저항이 0.66 ohm-mm이었던 반면, 레이저 도핑 공정에 의한 ohmic contact 저항은 0.27 ohm-mm로 효과적으로 감소되었다. SIMS 분석을 통해 레이저 조사를 하는 동안 높은 에너지에 의해 실리콘이 GaN로 확산되었으며, ohmic contact 저항이 ohmic contact 영역 아래의 도핑 농도 증가로 인해 감소한 것을 확인했다.

• Journal of Electrochemical Science and Technology
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• 제12권3호
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• pp.358-364
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• 2021

In this study, an anion exchange membrane water electrolysis (AEMWE) cell was operated for ~1000 h at a voltage bias of 1.95 V. Impedance spectra were regularly measured every ~ 100 h, and changes in the ohmic and non-ohmic resistance were traced as a function of time. While there was relatively little change in the I-V curves and the total cell resistance during the long-term test, we observed various electrochemical phenomena in the cell: 1) initial activation with a decrease in both ohmic and non-ohmic resistance; 2) momentary and non-permanent bubble resistance (non-ohmic resistance) depending on the voltage bias, and 3) membrane degradation with a slight increase in the ohmic resistance. Thus, the regular test protocol used in this study provided clear insights into the performance degradation (or improvement) mechanism of AEMWE cells.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.283-283
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• 2011

The n-doping effect by doping metal carbonate into an electron-injecting organic layer can improve the device performance by the balanced carrier injection because an electron ohmic contact between cathode and an electron-transporting layer, for example, a high current density, a high efficiency, a high luminance, and a low power consumption. In the study, first, we investigated an electron-ohmic property of electron-only device, which has a ITO/$Rb_2CO_3$-doped $C_{60}$/Al structure. Second, we examined the I-V-L characteristics of all-ohmic OLEDs, which are glass/ITO/$MoO_x$-doped NPB (25%, 5 nm)/NPB (63 nm)/$Alq_3$ (32 nm)/$Rb_2CO_3$-doped $C_{60}$(y%, 10 nm)/Al. The $MoO_x$doped NPB and $Rb_2CO_3$-doped fullerene layer were used as the hole-ohmic contact and electron-ohmic contact layer in all-ohmic OLEDs, respectively, Third, the electronic structure of the $Rb_2CO_3$-doped $C_{60}$-doped interfaces were investigated by analyzing photoemission properties, such as x-ray photoemission spectroscopy (XPS), Ultraviolet Photoemission spectroscopy (UPS), and Near-edge x-ray absorption fine structure (NEXAFS) spectroscopy, as a doping concentration at the interfaces of $Rb_2CO_3$-doped fullerene are changed. Finally, the correlation between the device performance in all ohmic devices and the interfacial property of the $Rb_2CO_3$-doped $C_{60}$ thin film was discussed with an energy band diagram.

• Transactions on Electrical and Electronic Materials
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• 제14권1호
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• pp.32-35
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• 2013

In this paper, a manufacturing process was developed for fabricating high-quality AlGaN/GaN high electron mobility transistors (HEMTs) on silicon carbide (SiC) substrates. Various conditions and processing methods regarding the ohmic contact and pre-metal-deposition $BCl_3$ etching processes were evaluated in terms of the device performance. In order to obtain a good ohmic contact performance, we tested a Ti/Al/Ta/Au ohmic contact metallization scheme under different rapid thermal annealing (RTA) temperature and time. A $BCl_3$-based reactive-ion etching (RIE) method was performed before the ohmic metallization, since this approach was shown to produce a better ohmic contact compared to the as-fabricated HEMTs. A HEMT with a 0.5 ${\mu}m$ gate length was fabricated using this novel manufacturing process, which exhibits a maximum drain current density of 720 mA/mm and a peak transconductance of 235 mS/mm. The X-band output power density was 6.4 W/mm with a 53% power added efficiency (PAE).