• 대한기계학회논문집B
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• 제25권8호
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• pp.1140-1147
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• 2001

Experimental schemes that enable characterization of phase-change phenomena in the microscale regime are essential for understanding the phase-change kinetics. Particularly, monitoring rapid vaporization on a submicron length scale is an important yet challenging task in a variety of laser-processing application, including steam laser cleaning and liquid-assisted material ablation. This paper introduces a novel technique based on Michelson interferometry for probing the liquid-vaporization process on a solid surface heated by a KrF excimer laser pulse(λ=248nm, FWHM=24ns) in water. The effective thickness of a microbubble layer has been measured with nanosecond time resolution. The maximum bubble size and growth rate are estimated to be of the order of 0.1㎛ and 1m/s, respectively. The results show that the acoustic enhancement in the laser induced vaporization process is caused by bubble expansion in the initial growth stage, not by bubble collapse. This work demonstrates that the interference method is effective for detecting bubble nucleation and microscale vaporization kinetics.

• 한국세라믹학회지
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• 제36권1호
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• pp.55-60
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• 1999

Hexamethyldisilane(Si2(CH3)6)의 single precursor를 출발원료로 사용하여 화학기상증착법으로 Si 기판위에 buffer층의 형성 없이 $\beta$-SiC의 박막을 증착하였다. Si 기판과 SiO2 mask에서 SiC 박막 증착의 선택성을 위하여 HCI의 식각 가스를 도입하였고 출발원료와 HCI 가스의 공급방법을 변화시켰다. SiC 박막 증착 과정에서 HCI 가스의 도입이 막의 표면 조도에 미치는 영향을 조사하였고 Hall 측정을 통하여 SiC 막의 전기적 특성을 조사하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.69-72
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• 1999

A Well oriented Bi$_2$re$_2$CaCu$_2$O$\sub$8/(Bi2212) superconductor thick films were formed successfully on a copper substrate by liquid reaction between a Cu-free precursor and Cu tape using method in which Cu-free BSCO powder mixture was printed on copper plate and heat-treated. And we examined the mechanism for the rapid formation of Bi2212 superconducting films from observing the surface microstructure with heat-treatment time. At heat-treatment temperature, the printing layer partially melt by reacting with CuO of the oxidizing copper plate, and the nonsuperconducting phases present in the melt are typically Bi-free phases and Cu-free phases. Following the partial melting, the Bi$_2$Sr$_2$CaCu$_2$O$\sub$8/ superconducting phase is formed at Bi-free phase/liquid interface by nucleation and grows. It was confirmed that the phase colony from the phase diagram of Bi$_2$O$_3$-(SrO+CaO)/2-CuO system is similar to the observed result.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.170-170
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• 2010

a-plane 혹은 m-plane면을 사용하는 무분극 GaN LED는 c축 방향으로 발생하는 분극의 영향을 받지 않기 때문에 분극 GaN LED에 비해 높은 내부 양자효율을 가진다. 또한 무분극 GaN는 상대적으로 고농도의 p-type 도핑이 가능하기 때문에 광효율을 높일 수 있다. 하지만 이와 같은 장점에도 불구하고 무분극 GaN는 성장모드의 비대칭으로 인해 높은 결정성과 mirror-like한 표면을 얻기가 힘들다. 본 논문에서는 Metalorganic chemical-vapor deposition (MOCVD) 장비를 사용하여 r-plane 사파이어 기판위에 a-plane GaN을 성장시켰다. 일반적으로 사용하는 저온에서의 nucleation layer 성장 대신 $1050^{\circ}$의 고온에서 성장 시킨후 일반적으로 사용하는 two-step 성장방법으로 그위에 5.5um정도의 GaN을 성장시켰다. 성장시 Trimethylgallium(TMGa)와 암모니아를 각각 Ga과 N 소스로 이용하였고 캐리어 가스는 수소를 사용하였다. 비대칭 결정성을 줄이기 위해 3D island growth mode에서의 성장조건을 바꾸어 c축과 m축 방향으로의 X-ray 결정성(FWHM) 차이가 564 arcsec에서 206 arcsec로 변화 시켰다. Normarski 현미경으로 표면을 관찰한 결과 v-defect이 없고 a-plane GaN에서 볼 수 있는 전형적인 줄무늬 패턴을 가지는 표면을 얻었으며 광학적 특성을 보기 위해 Photoluminescence (PL)을 측정하였다.

• 한국결정성장학회지
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• 제4권3호
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• pp.238-244
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• 1994

보로실리케이트 유리기판과 석영기판을 사용하여 $800^{\circ}C~520^{\circ}C$의 온도 범위에서 용액 성장법에 의한 다결정 실리콘 박막의 성장에 관해 조사 하였다. 기판상에는 용애과의 젖음성을 좋게 해주기 위해 박막의 알루미늄츠오가 실리콘층이 증착되었으며, 용매로는 알루미늄과 실리콘옥사이드와의 반응에 의해서 일어난다. 결정립 크기가 수백 마이크론까지 이르는 실리콘을 얻을 수 있었으며, 석영기 판의 경우에는 보르실리 케이트 유리기판보다 강한 (111) 우선 성장 방향을 보여주고 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.224-224
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• 2012

For decades, carbon fiber has expanded their application fields from reinforced composites to energy storage and transfer technologies such as electrodes for super-capacitors and lithium ion batteries and gas diffusion layers for proton exchange membrane fuel cell. Especially in fuel cell, water repellency of gas diffusion layer has become very important property for preventing flooding which is induced by condensed water could damage the fuel cell performance. In this work, we fabricated superhydrophobic network of carbon fiber with high aspect ratio hair-like nanostructure by preferential oxygen plasma etching. Superhydrophobic carbon fiber surfaces were achieved by hydrophobic material coating with a siloxane-based hydrocarbon film, which increased the water contact angle from $147^{\circ}$ to $163^{\circ}$ and decreased the contact angle hysteresis from $71^{\circ}$ to below $5^{\circ}$, sufficient to cause droplet roll-off from the surface in millimeter scale water droplet deposition test. Also, we have explored that the condensation behavior (nucleation and growth) of water droplet on the superhydrophobic carbon fiber were significantly retarded due to the high-aspect-ratio nanostructures under super-saturated vapor conditions. It is implied that superhydrophobic carbon fiber can provide a passage for vapor or gas flow in wet environments such as a gas diffusion layer requiring the effective water removal in the operation of proton exchange membrane fuel cell. Moreover, such nanostructuring of carbon-based materials can be extended to carbon fiber, carbon black or carbon films for applications as a cathode in lithium batteries or carbon fiber composites.

• 한국결정성장학회지
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• 제15권1호
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• pp.10-15
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• 2005

Microwave plasma CVD 다이아몬드/Ti 박막 성장 시 CH₄/H₂ 가스의 유량비율, chuck bias, microwave power 등이 다이아몬드 박막의 구조적 특성과 입자밀도에 미치는 영향에 대하여 조사하였다. 2∼3 CH₄ Vol.% 조건일 때 sp³-결합성의 탄소 neutral 들이 우선적으로 형성되고 sp²-결합성의 탄소 neutral 들이 선택적으로 제거됨에 따라 양질의 다이아몬드 박막을 얻을 수 있었으며, 다이아몬드 입자 증착 기구를 해석하였다. Ti 기판에 걸어준 negative chuck bias가 증가함에 따라 다이아몬드 핵생성이 증진되어 다이아몬드 입자 밀도가 증가하였고, 임계 전압은 약 -50V 임을 확인하였다. 또한, microwave power가 증가함에 따라 미세결정질(micro-crystalline) graphite 층 생성이 제어되고 다이아몬드 층이 형성됨을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.215-216
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• 2013

The silicide is a compound of Si with an electropositive component. Silicides are commonly used in silicon-based microelectronics to reduce resistivity of gate and local interconnect metallization. The popular silicide candidates, CoSi2 and TiSi2, have some limitations. TiSi2 showed line width dependent sheet resistance and has difficulty in transformation of the C49 phase to the low resistive C54. CoSi2 consumes more Si than TiSi2. Nickel silicide is a promising material to substitute for those silicide materials providing several advantages; low resistivity, lower Si consumption and lower formation temperature. Nickel silicide (NiSi) nanowire (NW) has features of a geometrically tiny size in terms of diameter and significantly long directional length, with an excellent electrical conductivity. According to these advantages, NiSi NWs have been applied to various nanoscale applications, such as interconnects [1,2], field emitters [3], and functional microscopy tips [4]. Beside its tiny geometric feature, NW can provide a large surface area at a fixed volume. This makes the material viable for photovoltaic architecture, allowing it to be used to enhance the light-active region [5]. Additionally, a recent report has suggested that an effective antireflection coating-layer can be made with by NiSi NW arrays [6]. A unique growth mechanism of nickel silicide (NiSi) nanowires (NWs) was thermodynamically investigated. The reaction between Ni and Si primarily determines NiSi phases according to the deposition condition. Optimum growth conditions were found at $375^{\circ}C$ leading long and high-density NiSi NWs. The ignition of NiSi NWs is determined by the grain size due to the nucleation limited silicide reaction. A successive Ni diffusion through a silicide layer was traced from a NW grown sample. Otherwise Ni-rich or Si-rich phase induces a film type growth. This work demonstrates specific existence of NiSi NW growth [7].

• Current Photovoltaic Research
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• 제4권2호
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• pp.54-58
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• 2016

Laser-doped selective emitter process requires dopant source deposition, spin-on-glass, and is able to form selective emitter through SiNx layer by laser irradiation on desired locations. However, after laser doping process, the remaining dopant layer needs to be washed out. Laser-induced melting of pre-deposited impurity doping is a precise selective doping method minimizing addition of process steps. In this study, we introduce a novel scheme for fabricating highly efficient selective emitter solar cell by laser doping. During this process, laser induced damage induces front contact destabilization due to the hindrance of silver nucleation even though laser doping has a potential of commercialization with simple process concept. When the laser induced damage is effectively removed using solution etch back process, the disadvantage of laser doping was effectively removed. The devices fabricated using laser doping scheme power conversion efficiency was significantly improved about 1% abs. after removal the laser damages.

• 대한금속재료학회지
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• 제50권2호
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• pp.164-170
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• 2012

Nanotubular structure formation on the Ti-6Al-4V and Ti-Ta alloy surfaces by electrochemical methods has been studied using the anodizing method. A nanotube layer was formed on Ti alloys in 1.0 M $H_3PO_4$ electrolyte with small additions of $F^-$ ions. The nanotube nucleation and growth of the ${\alpha}$-phase and ${\beta}$-phase appeared differently, and showed different morphology for Cp-Ti, Ti-6Al-4V and Ti-Ta alloys. In the ${\alpha}$-phase of Cp-Ti and martensite ${\alpha}^{\prime}$ and in the ${\alpha}^{{\prime}{\prime}}$ and ${\beta}$-phase of the Ti-Ta alloy, the nanotube showed a clearly highly ordered $TiO_2$ layer. In the case of the Ti-Ta alloy, the pore size of the nanotube was smaller than that of the Cp-Ti due to the ${\beta}$-stabilizing Ta element. In the case of the Ti-6Al-4V alloy, the ${\alpha}$-phase showed a stable porous structure; the ${\beta}$-phase was dissolved entirely. The nanotube with two-size scale and high order showed itself on Ti-Ta alloys with increasing Ta content.