• Journal of Magnetics
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• v.6 no.2
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• pp.47-52
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• 2001

We present the magnetisation reversal dynamics of epitaxial Fe thin films grown on GaAs(001) and InAs(001) studied as a function of field sweep rate in the range 0.01-160 kOe/s using magneto-optic Kerr effect (MOKE). For 55 and 250 ${\AA}$ Fe/GaAs(001), we find that the hysteresis loop area A follows the scaling relation $A\propto H_{\alpha} \;with\; \alpha=0.03\sim0.05$ at low sweep rates and 0.33~0.40 at high sweep rates. For the 150${\AA}$ Fe/InAs(001) film, $\alpha$is found to be ~0.02 at low sweep rates and ~0.17 at high sweep rates. The differing values of $\alpha$ are attributed to a change of the magnetisation reversal process with increasing sweep rate. Domain wall motion dominates the magnetisation reversal at low sweep rates, but becomes less significant with increasing sweep rate. At high sweep rates, the variation of the dynamic coercivity $H_c{^*}$ is attributed to domain nucleation dominating the reversal process. The results of magnetic relaxation studies for easy-axis reversal are consistent with the sweeping of one or more walls through the entire probed region (~100$\mu m$). Domain images obtained by scanning Kerr microscopy during the easy cubic axis reversal process reveal large area domains separated by zigzag walls.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.183-183
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• 2015

Indium tin oxide (ITO)는 넓은 밴드갭을 가지는 n-type의 축퇴 반도체로 태양전지, 스마트윈도우, 터치 센서, organic light emitting displays (OLEDs) 등에 널리 적용된다. 최근 touch screen panels (TSPs)의 높은 전기적 특성 및 고해상도 요구에 따라 고품질 ITO 박막개발의 수요도 증가하는 추세이다. 지금까지 ITO 박막의 물성 및 기계적 특성에 관한 많은 연구가 진행되어 왔지만 ITO 초박막 에서의 근본적인 물성 변화에 대한 연구는 미흡한 실정이므로, 이러한 연구는 필수적이라 할 수 있다. ITO 초박막은 광학적 특성은 우수하나, 낮은 결정성으로 인해 전기적 특성이 나쁘다는 단점을 가지며, 이러한 ITO 박막의 결정성은 초기 박막 성장과정에 많은 영향을 받는다. ITO 박막의 초기성장과정은 핵이 생성된 후(nucleation), 각각의 위치에서 성장하게 되고(growth), 합쳐지면서(coalescence) 연속적인 막을 형성 하는데(continuous), 이러한 초기 박막 성장 과정 중에 핵 생성 밀도를 증가시키고 박막이 연속적으로 되는 두께를 감소시킨다면, 더욱 더 고품질의 ITO 초박막을 얻을 수 있을 것이다. 따라서, 본 연구에서는 박막 초기 형성 과정 중 섬들이 합체되는 두께를 최소화시키기 위하여 EMF(electromagnetic field strength) 시스템을 이용하였다. EMF 시스템은 DC 캐소드에 전자석 코일을 장착하여 전자기장을 추가로 부가한 것으로, 이를 이용할 경우 스퍼터 원자가 중성상태로 기판에 도달하는 것이 아니라, 이온화되어 Vp-Vf의 차이로 가속되어 추가적인 에너지를 공급받음으로써 기판표면상에서 확산을 촉진시키므로 박막이 연속적으로 되는 임계 두께를 감소시킬 수 있는 것으로 기대된다. 실험은 실온에서 DC 마그네트론 스퍼터링법을 이용하였으며, 유리기판위에 4, 6, 8, 10, 12, 20 nm의 두께로 ITO 박막을 제작하였다. 스퍼터링 파워는 150 W (3.29 W/cm3), 작업 압력은 0.13 Pa, 기판과 타깃 사이의 거리는 70 mm였다. 각각의 두께에서 EMF 파워 0, 5, 10, 15, 20, 25, 30 W로 인가하여 박막을 제작한 후, EMF 파워에 따른 ITO 박막의 초기 성장 과정중 표면상태를 AFM (atomic force microscope) 이미지를 통하여 관찰하였다. 또한, 두께 약 8 nm에서와 20 nm일 때의 전기적 특성 및 광학적 특성을 관찰하였으며, 두 박막 모두 EMF 파워 15 W를 인가하였을 때 그 특성이 가장 향상되는 것을 확인하였다. 이러한 결과를 통하여 박막은 초기 성장이 중요하므로, 매우 얇은 두께에서 좋은 특성을 가진 박막을 제작하여야 박막의 두께를 증가시켰을 때도 좋은 특성의 막을 얻을 수 있음을 알 수 있었다. 또한, EMF 파워를 증가시킴에 따라 자장강도를 증가시키는 것과 같은 효과 즉, 플라즈마 임피던스가 감소하는 효과를 내어 증착 중 고 에너지 입자 (Ar0, O-)에 의한 박막손상이 감소한 것으로 판단된다. 따라서 적정 EMF 파워 15 W를 인가하였을때 가장 물성이 좋은 ITO 박막을 얻을 수 있었다. 즉, EMF 시스템을 이용하여 저온 공정에서 결함농도가 적은 고품질의 ITO 초박막을 제작할 수 있었다.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.27 no.1
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• pp.9-16
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• 2014

Using a level set method and topological derivatives, a topological shape optimization method that is independent of an initial design is developed for linearly elastic structures. In the level set method, the initial domain is kept fixed and its boundary is represented by an implicit moving boundary embedded in the level set function, which facilitates to handle complicated topological shape changes. The "Hamilton-Jacobi(H-J)" equation and computationally robust numerical technique of "up-wind scheme" lead the initial implicit boundary to an optimal one according to the normal velocity field while minimizing the objective function of compliance and satisfying the constraint of allowable volume. Based on the asymptotic regularization concept, the topological derivative is considered as the limit of shape derivative as the radius of hole approaches to zero. The required velocity field to update the H-J equation is determined from the descent direction of Lagrangian derived from optimality conditions. It turns out that the initial holes are not required to get the optimal result since the developed method can create holes whenever and wherever necessary using indicators obtained from the topological derivatives. It is demonstrated that the proper choice of control parameters for nucleation is crucial for efficient optimization process.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.31 no.6
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• pp.23-29
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• 2003

Transonic two-phase flow of Saturated humid air, in which relative humidity is 100%, with various condensation processes around thin airfoils is investigated. The study uses an extended transonic small-disturbance(TSD) model of Rusak and Lee [11, 12] which includes effects of heat addition to the flow due to condensation. Two possible limit types of condensation processes are considered. In the nonequilibrium and homogeneous process, the condensate mass fraction is calculated according to classical nucleation and droplet growth rate models. In the equilibrium process, the condensate mass fraction is calculated by assuming an isentropic process. The flow and condensation equations are solved numerical1y by iterative computations. Results under same upstream conditions describe the flow structure, field of condensate, and pressure distribution on airfoil's surfaces. It is found that flow characteristics, such as position and strength of shock waves and airfoil’s pressure distribution, are different for the two condensation processes. Yet, in each case, heat addition as a result of condensation causes significant changes in flow behavior and affects the aerodynamic performance of airfoils.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.363-363
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• 2014

Ruthenium (Ru) has attractive material properties due to its promising characteristics such as a low resistivity ($7.1{\mu}{\Omega}{\cdot}cm$ in the bulk), a high work function of 4.7 eV, and feasibility for the dry etch process. These properties make Ru films appropriate for various applications in the state-of-art semiconductor device technologies. Thus, it has been widely investigated as an electrode for capacitor in the dynamic random access memory (DRAM), a metal gate for metal-oxide semiconductor field effect transistor (MOSFET), and a seed layer for Cu metallization. Due to the continuous shrinkage of microelectronic devices, better deposition processes for Ru thin films are critically required with excellent step coverages in high aspect ratio (AR) structures. In these respects, atomic layer deposition (ALD) is a viable solution for preparing Ru thin films because it enables atomic-scale control of the film thickness with excellent conformality. A recent investigation reported that the nucleation of ALD-Ru film was enhanced considerably by using a zero-valent metallorganic precursor, compared to the utilization of precursors with higher metal valences. In this study, we will present our research results on the synthesis and characterization of novel ruthenium complexes. The ruthenium compounds were easy synthesized by the reaction of ruthenium halide with appropriate organic ligands in protic solvent, and characterized by NMR, elemental analysis and thermogravimetric analysis. The molecular structures of the complexes were studied by single crystal diffraction. ALD of Ru film was demonstrated using the new Ru metallorganic precursor and O2 as the Ru source and reactant, respectively, at the deposition temperatures of $300-350^{\circ}C$. Self-limited reaction behavior was observed as increasing Ru precursor and O2 pulse time, suggesting that newly developed Ru precursor is applicable for ALD process. Detailed discussions on the chemical and structural properties of Ru thin films as well as its growth behavior using new Ru precursor will be also presented.

• Applied Chemistry for Engineering
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• v.2 no.2
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• pp.97-107
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• 1991

Highly-siliceous dealuminated zeolite, silicalite(end member of ZSM-5) was synthesized from a batch composition of 2.55 $Na_2O-5.0$ TPABr-$100SiO_2-2800H_2O $ at $180^{\circ}C$ and at times ranging from one to seven days of reaction time. Autoclaves containing the synthesis mixture were centrifuged within the specially-equipped convection oven to provide an elevated gravitational force field like 30 and 50 G. Tests were also conducted at normal gravity. For synthesis performed under elevated gravities, average and maximum crystal sizes were substantially greater than those synthesized under normal gravity and product yields were also found to be affected by elevated gravity ; that is, product yields were substantially enhanced under elevated gravity from 4 % to 55 % with respect to normal gravity. The average crystal sizes of silicalite synthesized at normal gravity were 50 to $70{\mu}m$ over an entire range of reaction time, one to seven days while the average crystal sizes synthsized under elevated gravities, 30 and 50 G, were 160 to $190{\mu}m$ respectively. For the elevated gravity, in particular, two separate nucleations and growths were observed. For examples, at 50G, large crystals of $200{\mu}m$ were produced through the second growing stage after 5 days of reaction following the rapid first growing stage where fairly large crystals of $135{\mu}m$ were produced only in 2 days of reaction. The maximum crystal sizes obtained through the above two growing stages were 190 and $300{\mu}m$, respectively. A discussion of how elevated gravity affects nucleation, growth, yield and crystal size of silicalite is presented.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.4
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• pp.154-159
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• 2019

The glass-ceramic of $Li_2O-Al_2O_3-SiO_2$ system was fabricated by using yttrium oxide and iron oxide that it can reduce the melting temperature and affect the homogenization. Zirconium sulfate was used as a nucleation agent. Calcium phosphate was used to improve the flow the glass so as reduce the viscosity of the glass. The glass-ceramics met a thermal shock test of more than $750^{\circ}C$ and the temperature at which the coefficient of thermal expansion rapidly increased at over $800^{\circ}C$ was shifted by about the above $30^{\circ}C$. Therefore, it is concluded that the glass-ceramic of $Li_2O-Al_2O_3-SiO_2$ system with yttrium oxide and iron oxide was founded to have good melting conditions and excellent thermal expansion resistance at high temperature such as special field for kitchen utensils.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.14-14
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• 2011

W (tungsten)-alloys will be the most promising plasma facing armor materials in highly loaded plasma interactive components of the next step fusion reactors due to its high melting point, high sputtering resistance and low deuterium/tritium retention. The bonding technology of tungsten to Cu alloy was one of the key issues. In this paper, W/CuCrZr diffusion bonding has been performed successfully by inserting pure metal interlay. The joint microstructure, interfacial elements migration and phase composition were analyzed by SEM, EDS, XRD, and the joint shear strength and micro-hardness were investigated. The mock-ups were fabricated successfully with diffusion bonding and the cladding technology respectively, and the high heat flux test and thermal fatigue test were carried out under actively cooling condition. When Ni foil was used for the bonding of tungsten to CuCrZr, two reaction layers, Ni4W and Ni(W) layer, appeared between the tungsten and Ni interlayer with the optimized condition. Even though Ni4W is hard and brittle, and the strength of the joint was oppositely increased (217 MPa) due primarily to extremely small thicknesses (2~3 ${\mu}m$). When Ti foil was selected as the interlayer, the Ti foil diffused quickly with Cu and was transformed into liquid phase at $1,000^{\circ}C$. Almost all of the liquid was extruded out of the interface zone under bonding pressure, and an extremely thin residual layer (1~2 ${\mu}m$) of the liquid phase was retained between the tungsten and CuCrZr, which shear strength exceeded 160 MPa. When Ni/Ti/Ni multiple interlayers were used for bonding of tungsten to CuCrZr, a large number of intermetallic compound ($Ni_4W/NiTi_2/NiTi/Ni_3T$) were formed for the interdiffusion among W, Ni and Ti. Therefore, the shear strength of the joint was low and just about 85 MPa. The residual stresses in the clad samples with flat, arc, rectangle and trapezoid interface were estimated by Finite Element Analysis. The simulation results show that the flat clad sample was subjected maximum residual stress at the edge of the interface, which could be cracked at the edge and propagated along the interface. As for the rectangle and trapezoid interface, the residual stresses of the interface were lower than that of the flat interface, and the interface of the arc clad sample have lowest residual stress and all of the residual stress with arc interface were divided into different grooved zones, so the probabilities of cracking and propagation were lower than other interfaces. The residual stresses of the mock-ups under high heat flux of 10 $MW/m^2$ were estimated by Finite Element Analysis. The tungsten of the flat interfaces was subjected to tensile stresses (positive $S_x$), and the CuCrZr was subjected to compressive stresses (negative $S_x$). If the interface have a little microcrack, the tungsten of joint was more liable to propagate than the CuCrZr due to the brittle of the tungsten. However, when the flat interface was substituted by arc interfaces, the periodical residual stresses in the joining region were either released or formed a stress field prohibiting the growth or nucleation of the interfacial cracks. Thermal fatigue tests were performed on the mock-ups of flat and arc interface under the heat flux of 10 $MW/m^2$ with the cooling water velocity of 10 m/s. After thermal cycle experiments, a large number of microcracks appeared at the tungsten substrate due to large radial tensile stress on the flat mock-up. The defects would largely affect the heat transfer capability and the structure reliability of the mock-up. As for the arc mock-up, even though some microcracks were found at the interface of the regions, all microcracks with arc interface were divided into different arc-grooved zones, so the propagation of microcracks is difficult.