• Communications of the Korean Mathematical Society
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• v.30 no.3
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• pp.201-208
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• 2015

This paper reviews recent mathematical progresses made on the study of the initial-value problem for nonlinear Dirac equations in one space dimension. We also prove the global existence of solutions to some nonlinear Dirac equations and propose a model problem (3.6).

• Journal of the Korean Mathematical Society
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• v.37 no.6
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• pp.1071-1084
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• 2000

We show that a weak solution of the Cauchy problem for he nonlinear Schrodinger equation, {i∂(sub)t u + ∂$^2$(sub)x u = f(u,u), t∈(-T,T), x∈R, u(0,x) = ø(x).} in the negative solbolev space H(sup)s has a smoothing effect up to real analyticity if the initial data only have a single point singularity such as the Dirac delta measure. It is shown that for H(sup)s (R)(s>-3/4) data satisfying the condition (※Equations, See Full-text) the solution is analytic in both space and time variable. The argument is based on the recent progress on the well-posedness result by Bourgain [2] and Kenig-Ponce-Vega [18] and previous work by Kato-Ogawa [12]. We give an improved new argument in the regularity argument.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.2
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• pp.14-26
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• 2002

A new model for degenerate semiconductor quantum well devices was developed. In this model, the multi-subband Boltzmann transport equation was formulated by applying the Pauli exclusion principle and coupled to the Schrodinger and Poisson equations. For the solution of the resulted nonlinear system, the finite difference method and the Newton-Raphson method was used and carrier energy distribution function was obtained for each subband. The model was applied to a Si MOSFET inversion layer. The results of the simulation showed the changes of the distribution function from Boltzmann like to Fermi-Dirac like depending on the electron density in the quantum well, which presents the appropriateness of this modeling, the effectiveness of the solution method, and the importance of the Pauli -exclusion principle according to the reduced size of semiconductor devices.