• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.95-99
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• 2018

High thermal conductivity films with electrically insulating properties have a great potential for the effective heat transfer as substrate and thermal interface materials in high density and high power electronic packages. There have been lots of studies to achieve high thermal conductivity composites using high thermal conductivity fillers such alumina, aluminum nitride, boron nitride, CNT and graphene, recently. Among them, hexagonal-boron nitride (h-BN) nano-sheet is a promising candidate for high thermal conductivity with electrically insulating filler material. This work presents an enhanced heat transfer properties of ceramic/polymer composite films using h-BN nano-sheets and PVA polymer resins. The h-BN nano-sheets were prepared by a mechanical exfoliation of h-BN flakes using organic media and subsequent ultrasonic treatment. High thermal conductivities over $2.8W/m{\cdot}K$ for transverse and $10W/m{\cdot}K$ for in-plane direction of the cast films were achieved for casted h-BN/PVA composite films. Further improvement of thermal conductivity up to $13.5W/m{\cdot}K$ at in-plane mode was achieved by applying uniaxial compression at the temperature above glass transition of PVA to enhance the alignment of the h-BN nano-sheets.

• Journal of the Korean Ceramic Society
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• v.46 no.6
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• pp.583-586
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• 2009

The Tantalum nitride has attracted wide at attention as issues related to the toxicity of Cd-related materials. But in the titration process of Ta$Cl_5$ solution with $NH_4$OH, $NH_4$Cl, as a by product, was remained in the prepared Tantalum precursor. The tantalum precursor with $NH_4$Cl was nitrided by ammonolysis. The red color tone of $Ta_3N_5$ was reduced by the residual $NH_4$Cl reduce. Therefore, amorphous Tantalum precursor was prepared by filtering process with as hydrous ethanol to remove the $NH_4$Cl. In the case of using Tantalum precursor without $NH_4$Cl, we successfully synthesized the Tantalum nitride with good red color. The value of red color tone was improved from $a^*$=36.8 to $a^*$=53.0. The synthesized powder was characterized by XRD, SEM, the Nitrogen / Oxygen Determinator, TG-DTA, and the CIE $L^*a^*b^*$ colorimeter.

• Journal of Welding and Joining
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• v.28 no.6
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• pp.40-44
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• 2010

Laser assisted machining (LAM) has been researched in order to machine the silicon nitride ceramics economically and effectively. LAM is an effective machining method by local heating of the cutting part to the softening temperature of the silicon nitride using laser beam. When silicon nitride ceramics is heated using a laser beam, the surface of silicon nitride ceramic is softened, oxidized and decomposed. And then surface hardness is decreased. Through machining in low viscosity and hardness conditions, silicon nitride was machined effectively and the life span of tool was increased. The plastic deformation was occurred due to softening of amorphous YSiAlON above $ 1,000^{\circ}C$. Transgranular fracture of ${\beta}-Si_3N_4$ was occurred when YSiAlON was not softened, but mostly intergranular fracture was occurred by the plastic deformation of softened YSiAlON.

• Journal of the Korean Society for Precision Engineering
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• v.30 no.12
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• pp.1227-1235
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• 2013

Ceramic materials are classified by oxide, nitride and carbide material and have high brittleness, strength and hardness. Ceramic materials are strong in compression but weak in shearing and tension. This review paper has focused on technology trends and mechanism analysis of ceramics removal machining. The ceramic materials have superior mechanical, physical and chemical properties, but it is very hard to machining and the use of ceramics has been limited because of high strength and brittleness. In this paper, technology trends of ceramic removal-machining was introduced for types of machining technology, abrasive machining, cutting process, laser machining and so on.

• The Korean Journal of Ceramics
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• v.6 no.1
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• pp.32-36
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• 2000

Pyrolytic preparations of Ti-Al-N ceramics from three blended precursors were investigated. The precursors were prepared stirring ($HA1N^{i}Pr_m$ and an aminolysis product of $Ti(NMe_2)_4$ with $MeHNCH_2CH_2$NHMe in $C_6/H_6$ . IR and $^1H\;NMR $analyses suggested that essentially no Ti-N-Al bonds were present in the precursors. Pyrolysis of the precursors under $NH_3-N_2$led to the formation of brown solids with ceramic yields of about 30%, and the Ti-Al ratios in the pyrolyzed products were close to those of the precursors. XRD analysis of the pyrolyzed product from the precursor with Ti:Al=5:1 indicated the formation of a NaCl-type compound as the only crystalline phase. Pyrolysis of the precursor with Ti:Al=2:1 led to the formation of AlN besides the major NaCl-type compound. A ceramic composite containing AlN and the NaCl-type compound was formed by pyrolysis of the precursor with Ti:Al=1:2.

• Journal of the Korean Ceramic Society
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• v.46 no.5
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• pp.452-455
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• 2009

A cost-effective route to synthesize $\beta$-SiAlONs from Si mixtures by reaction bonding followed by post-sintering was investigated. Three different z values, 0.45, 0.92 and 1.87, in $Si_{6-z}Al_zO_zN_{8-z}$ without excess liquid phase were selected to elucidate the mechanism of SiAlON formation and densification. For RBSN (reaction-bonded silicon nitride) specimens prior to post-sintering, nitridation rates of more than 90% were achieved by multistep heating to $1400^{\circ}C$ in flowing 5%$H_2$/95%$N_2$; residual Si was not detected by XRD analysis. An increase in density was acquired with increasing z values in post-sintered specimens, and this tendency was explained by the presence of higher amounts of transient liquid phase at larger z values. Measured z values from the synthesized $\beta$-SiAlONs were similar to the values calculated for the starting compositions. Slight deviations in z values between measurements and calculations were rationalized by a reasonable application of the characteristics of the nitriding and post-sintering processes.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.620-624
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• 2012

The role of moisture remaining inside the deposition chamber during the formation of the cubic boron nitride (c-BN) phase in BN film was investigated. BN films were deposited by an unbalanced magnetron sputtering (UBM) method. Single-crystal (001) Si wafers were used as substrates. A hexagonal boron nitride (h-BN) target was used as a sputter target which was connected to a 13.56 MHz radiofrequency electric power source at 400 W. The substrate was biased at -60 V using a 200 kHz high-frequency power supply. The deposition pressure was 0.27 Pa with a flow of Ar 18 sccm - $N_2$ 2 sccm mixed gas. The inside of the deposition chamber was maintained at a moisture level of 65% during the initial stage. The effects of the evacuation time, duration time of heating the substrate holder at $250^{\circ}C$ as well as the plasma treatment on the inside chamber wall on the formation of c-BN were studied. The effects of heating as well as the plasma treatment very effectively eliminated the moisture adsorbed on the chamber wall. A pre-deposition condition for the stable and repeatable deposition of c-BN is suggested.

• Journal of Powder Materials
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• v.26 no.5
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• pp.395-404
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• 2019

Aluminum nitride (AlN) has excellent electrical insulation property, high thermal conductivity, and a low thermal expansion coefficient; therefore, it is widely used as a heat sink, heat-conductive filler, and heat dissipation substrate. However, it is well known that the AlN-based materials have disadvantages such as low sinterability and poor mechanical properties. In this study, the effects of addition of various amounts (1-6 wt.%) of sintering additives $Y_2O_3$ and $Sm_2O_3$ on the thermal and mechanical properties of AlN samples pressureless sintered at $1850^{\circ}C$ in an $N_2$ atmosphere for a holding time of 2 h are examined. All AlN samples exhibit relative densities of more than 97%. It showed that the higher thermal conductivity as the $Y_2O_3$ content increased than the $Sm_2O_3$ additive, whereas all AlN samples exhibited higher mechanical properties as $Sm_2O_3$ content increased. The formation of secondary phases by reaction of $Y_2O_3$, $Sm_2O_3$ with oxygen from AlN lattice influenced the thermal and mechanical properties of AlN samples due to the reaction of the oxygen contents in AlN lattice.

• Journal of the Korean Ceramic Society
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• v.36 no.1
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• pp.15-20
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• 1999

Elevated temperature static fatigue behavior of silicon has been investigated by stress intensity/life test method. Static fatigue crack growth rate increase with the increase of temperature. Such tendency is found to be mainly related to the decrease of fracture toughness with the increase of temperature. That is, when static fatigue crack growth rate, da/dt is expressed by da/dt=AK1m, a constant A is a function of fracture toughness Kc and the exponent m is a constant which is independent of temperature or Kc. However, in the case of high temperature that glass phase is softened, the crack growth rate is found to be deviated from the above relation. This reason is, thus, discussed.

• Journal of the Korean Ceramic Society
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• v.47 no.2
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• pp.157-162
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• 2010

Effect of starting SiC particle size on nitridation rate and flexural strength of $Si_3N_4$-bonded-SiC (SNBSC) ceramics was investigated by using SiC particles of different size (${\sim}200\;{\mu}m$, ${\sim}100\;{\mu}m$ and ${\sim}45\;{\mu}m$). The specimen prepared from smaller SiC particles resulted in higher nitridation rate after nitridation at $1450^{\circ}C$, owing to the lower packing density in green body. The flexural strength showed maxima after 1-h nitridation for all specimens and then decreased with prolonged nitridation because of local densification-induced pore coarsening. The specimen prepared from smaller SiC particles showed better flexural strength because of smaller pore size and partly higher nitridation rate in the specimen. A maximal flexural strength of 29 MPa was obtained in the specimen with a density of $2.04\;g{\cdot}cm^3$, which was prepared from $45\;{\mu}m$-SiC particles.